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Results for “charge-transport”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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3 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Simultaneous holographic and photocurrent studies of the photorefractive effect in LiTaO3 and LiNbO3

In reduced LiNbO3:Mn both the photorefractive sensitivity and the simultaneously measured photocurrent result from drift with a polarization-dependent effective 'internal field' of about 6 kV/cm. In reduced undoped LiTaO3 the observed difference in applied fields of the minimum photorefractive sensitivity and zero photocurrent imply charge transport is by a mechanism that cannot be completely described by diffusion and drift in an electric field. The direct measurement of the harmonic content of phase gratings written in several LiNbO3 and LiTaO3 crystals shows termination of charge-transport results from the space-charge field of the hologram.

Spinhirne, J. M.↗
NASA NTRS1988

Nonlinear photorefractive response at high modulation depths

The response of photorefractive materials to sinusoidal intensity patterns of high modulation depths is considered. It is shown that the induced refractive-index response in this regime is highly nonlinear. Concise analytic expressions for the various nonlinear harmonics of the photorefractive response field are developed and compared with exact numerical solutions of the underlying charge-transport equations as well as with the results of previous theoretical models over a broad range of physical parameters. We show that the nonlinear response characteristics are strongly dependent on both the magnitude of applied electric fields and the relative concentrations of charge donor and acceptor sites in the material. For drift dominated recording, in particular, we determine analytically that in the limit of a minimal acceptor/donor ratio, the amplitudes of higher spatial harmonics of the response reach a maximum and eventually decay as functions of increasing applied field, whereas these amplitudes reach a nonzero limit in the case of a near-unity acceptor/donor ratio. Finally, we generalize our results to account for diffusion effects in an appended derivation.

Vachss, Frederick↗
NASA NTRS1989

Characterization of multiple-bit errors from single-ion tracks in integrated circuits

The spread of charge induced by an ion track in an integrated circuit and its subsequent collection at sensitive nodal junctions can cause multiple-bit errors. The authors have experimentally and analytically investigated this phenomenon using a 256-kb dynamic random-access memory (DRAM). The effects of different charge-transport mechanisms are illustrated, and two classes of ion-track multiple-bit error clusters are identified. It is demonstrated that ion tracks that hit a junction can affect the lateral spread of charge, depending on the nature of the pull-up load on the junction being hit. Ion tracks that do not hit a junction allow the nearly uninhibited lateral spread of charge.

Zoutendyk, J. A.↗