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Evaluation of Contact Separation Force Testing as a Screening Methodology for Electrical Socket Contacts
During system level testing intermittent and permanent open circuit failures of mated, crimp removable, electrical contact pairs were experienced. The root cause of the failures was determined to be low (but not zero) contact forces applied by the socket contact tines against the engaging pin. The low contact force reduces the effectiveness of the wiping action of the socket tines against the pin. The observed failure mode may be produced when insufficient wiping during mate, demate and small relative movement in use allows for the accumulation of debris or insulating films that electrically separate the contact pair. The investigation identified at least three manufacturing process control problems associated with the socket contacts that enabled shipment of contacts susceptible to developing low contact forces: (1) Improper heat treatment of the socket tines resulting in plastic rather than elastic behavior; (2) Overly thinned socket tines at their base resulting in reduced pin retention forces; (3) Insufficient screening tests to identify parts susceptible to the aforementioned failure mechanisms. The results from an extensive screening program of socket contacts utilizing the industry standard contact separation force test procedures are described herein. The investigation shows this method to be capable of identifying initially weak sockets. However, sockets whose contact retention forces may degrade during use may not be screened out by pin retention testing alone. Further investigations are required to correlate low contact retention forces with increased electrical contact resistance in the presence of insulating films that may accumulate in the use environment.
Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application
Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm 2 and 0.5 mA/cm 2 due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J 0 ), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J 0 to ~100 mA/cm 2 .
A New Method for the Evaluation of Majority and Minority Carrier Contact Resistivity of Polysilicon on Oxide Contacts
In this contribution we present a novel technique for characterizing the majority and minority carrier contact resistivity in polysilicon on oxide passivating contacts. Traditionally, contact resistivity is measured through the Transfer Length Method (TLM). This method presents difficulties when measuring the minority carrier contact due to the presence of a blocking diode which prevents current flow between the pads. Our novel method is performed by creating a unipolar device which has the same contact on both sides (either symmetric n-type or symmetric p-type) and metalizing the device with a grid on one side, and a full metal contact on the back (the same pattern that will be used in a final cell). We then measure the resistance across the device at increasing illumination. Since the resistivity of the wafer is a function of carrier density, when increasing illumination, the wafer resistivity decreases. We can then fit modeling equations to the measured resistivity and extrapolate the fit to infinite illumination where only the contact resistivity is measured to accurately measure both the minority and majority carrier contact resistivity.
Effect of load, area of contact, and contact stress on the wear mechanisms of a bonded solid lubricant film
A pin on disk type of friction and wear apparatus was used to study the effect of load, contact stress and rider area of contact on the friction and wear properties of polyimide bonded graphite fluoride films. Different rider area contacts were obtained by initially generating flats (with areas of 0.0035, 0.0071, 0.0145, and 0.0240 cm) on 0.476-cm radius hemispherically tipped riders. Different projected contact stresses were obtained by applying loads of 2.5- to 58.8-N to the flats. Two film wear mechanisms were observed. The first was found to be a linear function of contact stress and was independent of rider area of contact. The second was found to increase exponentially as the stress increased. The second also appeared to be a function of rider contact area. Wear equations for each mechanism were empirically derived from the experimental data. In general, friction coefficients increased with increasing rider contact area and with sliding duration. This was related to the build up of thick rider transfer films.
Effect of load, area of contact, and contact stress on the tribological properties of polyimide bonded graphite fluoride films
A pin-on-disk type of friction and wear apparatus was used to study the effect of load, contact stress and rider area of contact on the friction and wear properties of polyimide-bonded graphite fluoride films. Different rider area contacts were obtained by initially generating flats (with areas of 0.0035, 0.0071, 0.0145, and 0.0240 cm) on 0.476-cm radius hemispherically-tipped riders. Different projected contact stresses were obtained by applying loads of 2.5-to 58.8-N to the flats. Two film wear mechanisms were observed. The first was found to be a linear function of contact stress and was independent of rider area of contact. The second was found to increase exponentially as the stress increased. The second also appeared to be a function of rider contact area. Wear equations for each mechanism were empirically derived from the experimental data. In general, friction coefficients increased with increasing rider contact area and with sliding duration. This was related to the build-up of thick rider transfer films.
Investigation of Contact Properties and Device Performance for Bifacial Double-Side Textured Silicon Solar Cells With Polysilicon Based Passivating Contacts
We investigate the impact of the surface morphology on the contact properties of phosphorus doped poly-Si layers. If the poly-Si layer on a textured surface remains intact after high-temperature metallization using a fire-through (FT) silver (Ag) paste, the J0,metal is not expected to increase significantly while the specific contact resistivity can improve with a textured surface. The contact properties of the FT Ag contacts to n+ poly-Si deposited on both textured and planar surfaces are investigated by measuring and evaluating ρc and J0,metal. The reasons for differences in contact resistance and recombination are further investigated with SEM imaging. Solar cells with n-type polysilicon based passivating contacts on the rear side are fabricated and characterized. The scientific approach used, and the insights presented in this work, help to understand the mechanisms and behavior of screen-printed and fired-through contacts to polysilicon layers deposited onto textured silicon surfaces.
Improvements in contact resistivity and thermal stability of Au-contacted InP solar cells
Specific contact resistivities for as-fabricated Au contacts on n-p InP solar cells are typically in the 10(exp -3) ohm/sq cm range, but contact resistivities in the 10(exp -6) ohm/sq cm range can be obtained if the cells are heat treated at 400 C for a few minutes. This heat treatment, however, results in a dramatic drop in the open circuit voltage of the cell due to excessive dissolution of the emitter into the metallization. It was found that low values of contact resistivity can be secured without the accompanying drop in the open circuit voltage by adding Ga and In in the Au metallization. It is shown that Au contacts containing as little as 1 percent atomic Ga can suppress the reaction that takes place at the metal-InP interface during heat treatment, while exhibiting contact resistivity values in the low 10(exp -5) ohm/sq cm. Detailed explanations for the observed superior thermal stability of these contacts are presented.
Contact position sensor using constant contact force control system
A force control system (50) and method are provided for controlling a position contact sensor (10) so as to produce a constant controlled contact force therewith. The system (50) includes a contact position sensor (10) which has a contact probe (12) for contacting the surface of a target to be measured and an output signal (V.sub.o) for providing a position indication thereof. An actuator (30) is provided for controllably driving the contact position sensor (10) in response to an actuation control signal (I). A controller (52) receives the position indication signal (V.sub.o) and generates in response thereto the actuation control signal (I) so as to provide a substantially constant selective force (F) exerted by the contact probe (12). The actuation drive signal (I) is generated further in response to substantially linear approximation curves based on predetermined force and position data attained from the sensor (10) and the actuator (30).
Contact regrowth technique for low-resistance nonalloyed contacts to the hot-electron transistor
A novel contact regrowth technique for the formation of extremely low nonalloyed ohmic contacts is reported. The successful demonstration of this technique is reported on an InGaAs/InAlAs hot-electron transistor device. For the investigated InGaAs-based structure, the regrown contacting scheme reported includes an In(0.53)Ga(0.47)As layer, an InAs/GaAs strained-layer superlattice, and an InAs cap, all heavily doped n type with Si. A very low specific contact resistance of 1.8 x 10 to the -7th ohm sq cm to the base layer is obtained. The higher current densities achieved in the transistor characteristics are in close agreement with calculations, and a contact model is presented explaining the poor results of conventional nonalloyed contacts.
Wireless Measurement of Contact and Motion Between Contact Surfaces
This method uses a magnetic-field- response contact sensor that is designed to identify surface contact and motion between contact locations. The sensor has three components: (1) a capacitor-inductor circuit with two sets of electrical contact pads, (2) a capacitor with a set of electrical contact pads, and (3) an inductor with a set of electrical contact pads. A unique feature of this sensor is that it is inherently multifunctional. Information can be derived from analyzing such sensor response attributes as amplitude, frequency, and bandwidth. A change in one attribute can be due to a change in a physical property of a system. A change in another attribute can be due to another physical property, which has no relationship to the first one.
Determination of the Actual Contact Surface of a Brush Contact
The number of partial contact surfaces of a brush-ring contact is measured by means of a statistical method. The particular brush is fitted with wicks - that is, insulated and cemented cylinders of brush material, terminating in the brush surface. The number of partial contact surfaces can be computed from the length of the rest periods in which such wicks remain without current. Resistance measurements enable the determination of the size of the contact surfaces. The pressure in the actual contact surface of a recently bedded brush is found to be not much lower than the Brinell hardness of the brush.
Interference fringe (IF) technique for droplet contact angle and thickness measurements: Ultralow contact angle and nanoscale thickness measurement
Recently, reflection interference fringe (RIF) and transmission fringe (TIF) techniques have been introduced to investigate the origin of far-field interference fringe (IF) formation and to determine a droplet's contact angle and thickness by measuring the fringe radius. In this study, characteristics of the IF technique are analyzed based on the RIF and TIF by varying the schematics, such as configuration (transmission/reflection), the droplet's side (left-hand side/right-hand side), and the substrate types (flat/prism). The analysis also investigates the refraction effect at the droplet edge and the maximum incidence and contact angles. The schematic variation shows that the widest contact angle range can be measured in a transmission configuration with droplet's right-hand side, and that the fringe radius decreases with incidence angles on a prism substrate, consistent with the recent observation. Refraction at the droplet edge causes the fringe radius to increase or decrease depending on the degree of refraction. Based on the characteristics study, it is revealed that the IF technique can determine nanometer-scale thicknesses below 100 nm on droplets, corresponding to ultra-small contact angles of less than 0.01°, with an extended working distance of 3000 mm and an optimized incidence angle, assuming a spherical profile. This finding is significant, as it demonstrates that the nanoscale thickness can be determined in situ under ambient conditions using a simple optical configuration, without requiring a sophisticated setup, such as a microscope. It is anticipated that the IF technique can be combined with other nanoscale thickness measurement techniques to enhance its measurement reliability.
Contact detection and contact motion for error recovery in the presence of uncertainties
Due to various kinds of uncertainties, a robot motion may fail and result in some unintended contact between the object held by the robot and the environment, which greatly hampers robotics applications on tasks with high-precision requirements, such as assembly tasks. Aiming at automatically recovering a robotic task from such a failure, this paper discusses, in the presence of uncertainties, contact detection based on contact motion for recovery. It presents a framework for on-line recognizing contacts using multiple sensor modalities in the presence of sensing uncertainties and means for ensuring successful compliant motions in the presence of sensing and control uncertainties.
Computing the contact areas of stationary and sliding contacts
Calculation of contact areas of stationary and sliding electric contacts - elastic and plastic contacts of electrodes
On the structure of contact binaries. I - The contact discontinuity
The problem of the interior structure of contact binaries is reviewed, and a simple resolution of the difficulties which plague the theory is suggested. It is proposed that contact binaries contain a contact discontinuity between the lower surface of the common envelope and the Roche lobe of the cooler star. This discontinuity is maintained against thermal diffusion by fluid flow, and the transition layer is thin to the extent that the dynamical time scale is short in comparison with the thermal time scale. The idealization that the transition layer has infinitesimal thickness allows a simple formulation of the structure equations which are closed by appropriate jump conditions across the discontinuity. The further imposition of the standard boundary conditions suffices to define a unique model for the system once the chemical composition, the masses of the two stars, and the orbital separation are specified.
Friction and contact resistance for low-speed gallium-lubricated sliding electrical contacts of beryllium in vacuum
Reducing friction and contact resistance of sliding electrical contacts of beryllium by gallium lubrication in vacuum
Friction and contact resistance for low speed gallium lubricated sliding electrical contacts of beryllium in vacuum.
Low speed Ga lubricated sliding electrical contacts of Be in vacuum, discussing Ga film role in friction and contact resistance