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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing-in-memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field-effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high-conductance state. We show that this device can be set to a low-conductance state by sweeping a negative bias on the device drain, and reset it to its high-conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide-semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group-IV HFETs to perform as analog cryogenic memory components.

cryogenic memory↗
DOE OSTI2021

High-T c Superconducting Memory Cell

In this paper, operational principles of a cryogenic memory cell that utilizes high-temperature superconductors (high-T c ) are presented. Such a cell consists of three inductively coupled Josephson junctions coupled via inductors. Design and operational logic of this type of cell were recently introduced and demonstrated for low temperature 4 K environment. The basic memory cell operations (read, write, reset) can be implemented on the same simple circuit and both destructive and non-destructive memory cell operations can be realized. Here, we present the design principles and computational validation of basic memory cell operations (write, read, and reset) for the high-T c memory cell. In conclusion, our results for the high-T c memory cell operations show very good resemblance with the previously presented low-temperature 4 K memory cell operations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Harnessing ferro-valleytricity in pentalayer rhombohedral graphene for memory and compute

Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving pentalayer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable ferro-valleytricity of pentalayer rhombohedral graphene to develop nonvolatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less nonvolatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, nondestructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ∼6 nW required per write operation and ∼2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed nonvolatile memory array without modifying the peripheral circuitry. In conclusion, our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

2D materials↗
DOE OSTI2019

Nanoscale magnetic Josephson junctions and superconductor/ferromagnet proximity effects for low-power spintronics

Competition between superconducting and ferromagnetic ordering at interfaces between ferromagnets (F) and superconductors (S) gives rise to several proximity effects such as odd-triplet superconductivity and spin-polarized supercurrents. A prominent example of an S/F proximity effect is the spin switch effect observed in S/F/N/F superconducting spin valve multilayers, in which the superconducting transition temperature T c is controlled by the angle Φ between the magnetic moments of the F layers separated by a nonmagnetic metallic spacer N. We carried out an experimental study of spin switch effect in Nb/Co/Cu/Co/CoO x nanowires measured as a function of bias current flowing in the plane of the layers. These measurements reveal an unexpected dependence of T c (Φ) on the bias current: T c (Φ) – T c (0) changes sign with increasing current bias. We attribute the origin of this bias dependence of the spin switch effect to a spin Hall current originating in Nb and flowing perpendicular to the plane of the multilayer, which suppresses T c of the multilayer. The bias dependence of spin switch effect can be important for hybrid F/S devices such as cryogenic memory for superconducting computers when device dimensions are scaled down to the nanometer length scale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Emergent Quantum Magnetism and Cryogenic Spin-Memory in Twisted Bilayer Graphene

Recently developed techniques for assembling moiré heterostructures have enabled unprecedented control of the interlayer interactions within the heterostructure, allowing for the realization of strongly correlated electronic states. The experimentally realized states, to date, include a variety of topological states, superconductivity, and strange metal behavior. However, the phenomenology varies significantly from sample to sample. Here we will present microscopy techniques for further characterization of both the progenitor exfoliated materials and the composite moiré heterostructure. The application of these techniques has allowed for an unprecidented degree of characterization in ambient conditions. Additionally we will explore the use of resistively detected electron spin resonance (ESR) as a novel probe for spin order in moirés. While our results do not show clearly dispersive features that would unambiguously evince spin excitations within the sample, the technique is still promising.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Scalable low-loss cryogenic packaging of quantum memories in CMOS-foundry processed photonic chips

Optically linked solid-state quantum memories such as color centers in diamond are a promising platform for distributed quantum information processing and networking. Photonic integrated circuits (PICs) have emerged as a crucial enabling technology for these systems, integrating quantum memories with efficient electrical and optical interfaces in a compact and scalable platform. Packaging these hybrid chips into deployable modules while maintaining low optical loss and resiliency to temperature cycling is a central challenge to their practical use. We demonstrate a packaging method for PICs using surface grating couplers and angle-polished fiber arrays that is robust to temperature cycling, offers scalable channel count, applies to a wide variety of PIC platforms and wavelengths, and offers pathways to automated high-throughput packaging. Using this method, we show optically and electrically packaged quantum memory modules integrating all required qubit controls on chip, operating at millikelvin temperatures with <3 dB losses achievable from fiber to quantum memory for the TE 0 mode at a wavelength of 737 nm.

Bernson, Robert [Tyndall National Institute, Cork ↗
DOE OSTI2024

Colossal Strain Tuning of Ferroelectric Transitions in KNbO 3 Thin Films

Strong coupling between polarization ( P ) and strain (ɛ) in ferroelectric complex oxides offers unique opportunities to dramatically tune their properties. Here colossal strain tuning of ferroelectricity in epitaxial KNbO 3 thin films grown by sub‐oxide molecular beam epitaxy is demonstrated. While bulk KNbO 3 exhibits three ferroelectric transitions and a Curie temperature ( T c ) of ≈676 K, phase‐field modeling predicts that a biaxial strain of as little as −0.6% pushes its T c > 975 K, its decomposition temperature in air, and for −1.4% strain, to T c > 1325 K, its melting point. Furthermore, a strain of −1.5% can stabilize a single phase throughout the entire temperature range of its stability. A combination of temperature‐dependent second harmonic generation measurements, synchrotron‐based X‐ray reciprocal space mapping, ferroelectric measurements, and transmission electron microscopy reveal a single tetragonal phase from 10 K to 975 K, an enhancement of ≈46% in the tetragonal phase remanent polarization ( P r ), and a ≈200% enhancement in its optical second harmonic generation coefficients over bulk values. These properties in a lead‐free system, but with properties comparable or superior to lead‐based systems, make it an attractive candidate for applications ranging from high‐temperature ferroelectric memory to cryogenic temperature quantum computing.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Field-Deployable Quantum Memory for Quantum Networking

High-performance quantum memories are an essential component for regulating temporal events in quantum networks. As a component in quantum-repeaters, they have the potential to support the distribution of entanglement beyond the physical limitations of fiber loss. This will enable key applications such as quantum key distribution, network-enhanced quantum sensing, and distributed quantum computing. Here, we present a quantum memory engineered to meet real-world deployment and scaling challenges. The memory technology utilizes a warm rubidium vapor as the storage medium, and operates at room temperature, without the need for vacuum- and/or cryogenic- support. Here, we demonstrate performance specifications of high-fidelity retrieval (95%) and low operation error (10 –2 ) at a storage time of 160 µs for single-photon level quantum memory operations. We further show a substantially improved storage time (with classical-level light) of up to 1ms by suppressing atomic diffusions. The device is housed in an enclosure with a standard 2U rackmount form factor, and can robustly operate on a day scale in a noisy environment. This result marks an important step toward implementing quantum networks in the field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Resistance drift in Ge 2 Sb 2 Te 5 phase change memory line cells at low temperatures and its response to photoexcitation

Resistance drift in amorphous Ge 2 Sb 2 Te 5 is experimentally characterized in melt-quenched line cells in the range of 300 K to 125 K and is observed to follow the previously reported power-law behavior with drift coefficients in the range of 0.07 to 0.11 in the dark, linearly decreasing with 1/kT. While these drift coefficients measured in the dark are similar to commonly observed drift coefficients (~0.1) at and above room temperature, measurements under light show a significantly lower drift coefficient (0.05 under illumination vs 0.09 in the dark at 150 K). Periodic on/off switching of light shows a sudden decrease/increase in resistance, attributed to photo-excited carriers, followed by a very slow response (~30 min at 150 K) attributed to contribution of electron traps and slow trap-to-trap charge exchanges. A device-level electronic model is used to relate these experimental findings to gradual charging of electron traps in amorphous Ge 2 Sb 2 Te 5 , which gives rise to growth of a potential barrier for holes in time and, hence, resistance drift.

42 ENGINEERING↗
DOE OSTI2023

Selective and Scalable Control of Spin Quantum Memories in a Photonic Circuit

A central goal in many quantum information processing applications is a network of quantum memories that can be entangled with each other while being individually controlled and measured with high fidelity. This goal has motivated the development of programmable photonic integrated circuits (PICs) with integrated spin quantum memories using diamond color center spin-photon interfaces. However, this approach introduces a challenge into the microwave control of individual spins within closely packed registers. Here, we present a quantum memory-integrated photonics platform capable of (i) the integration of multiple diamond color center spins into a cryogenically compatible, high-speed programmable PIC platform, (ii) selective manipulation of individual spin qubits addressed via tunable magnetic field gradients, and (iii) simultaneous control of qubits using numerically optimized microwave pulse shaping. The combination of localized optical control, enabled by the PIC platform, together with selective spin manipulation opens the path to scalable quantum networks on intrachip and interchip platforms.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Knowledge-Informed Uncertainty-Aware Machine Learning for Time Series Forecasting of Dynamical Engineered Systems

The high complexity and multiscale nature of many engineered systems—such as those in nuclear power plants—make representing and forecasting their dynamic behavior challenging. Physics-based models can be overly complex and computationally intractable, whereas machine learning (ML) tools are often data-hungry and prone to unphysical solutions. This study proposes a knowledge-informed ML-aided hybrid residual modeling approach that offers accurate and efficient time series forecasting for the operation of dynamical engineered systems. Hybrid residual modeling entails a baseline solution from domain knowledge and known physics expressions about the system dynamics integrated with an ML model to capture undiscovered information from the mismatch (i.e., residuals) between true states from measurements and baseline-predicted outputs. This study further quantifies the ML model uncertainty to provide trustworthy solutions. Real-time operational data from thermal-hydraulic flow loops of the cryogenic moderator system in Oak Ridge National Laboratory’s Spallation Neutron Source facility were used to demonstrate the potential of knowledge-informed uncertainty-aware ML in real-world applications. The state variables of the cryogenic helium loop were modeled with (1) first principles–based system identification (sysID), (2) long short-term memory (LSTM) neural network, and (3) hybrid sysID (baseline) + LSTM (residual). The superior predictive capability of the sysID+LSTM model versus stand-alone sysID and LSTM is confirmed by average performance metrics and individual data points across different prediction horizons. By creating a robust representation of the underlying physical system, the widely applicable hybrid residual modeling approach will enable the future development of digital twins for performance prediction, prognostics, and operation control.

Zhao, Xingang↗
DOE OSTI2026

Probing Dynamic Phase Changes in Electrochemical Systems with Cryogenic and in Situ Analytical Electron Microscopy (Final Technical Report)

In this project, we focus on the advancement of our newly developed, unique in situ and cryogenic analytical electron microscopy (AEM) techniques and the development of additional high-end capabilities to quantitatively elucidate the mechanisms of resistive state changes in solid-state electrochemical materials for non-volatile, neuromorphic memory. The objectives of the proposed research are (1) to characterize and elucidate the mechanisms by which electronic state changes occur in various solid-state devices to build guiding principles for electrochemically activated smart materials; (2) to advance our understanding of such mechanisms by coupling cryogenic and in situ techniques to control kinetics of the observed mechanisms while mitigating probe-induced damage; and (3) to utilize additional advanced techniques including electron-beam induced current and quantum mechanical simulations in order to identify the underlying fundamental science of such processes, including roles of defect formation and its effect on phase nucleation, as well as dynamics of these processes in the electrochemical systems at the nanometer scale.

25 ENERGY STORAGE↗
DOE OSTI2025

Scalable 3D reconstruction for X-ray single particle imaging with online machine learning

X-ray free-electron lasers offer unique capabilities for measuring the structure and dynamics of biomolecules, helping us understand the basic building blocks of life. Notably, high-repetition-rate free-electron lasers enable single particle imaging, where individual, weakly scattering biomolecules are imaged under near-physiological conditions with the opportunity to access fleeting states that cannot be captured in cryogenic or crystallized conditions. Existing X-ray single particle reconstruction algorithms, which estimate the particle orientation for each image independently, are slow and memory-intensive when handling the massive datasets generated by emerging free-electron lasers. Here, we introduce X-RAI (X-Ray single particle imaging with Amortized Inference), an online reconstruction framework that estimates the structure of 3D macromolecules from large X-ray single particle datasets. X-RAI consists of a convolutional encoder, which amortizes pose estimation over large datasets, as well as a physics-based decoder, which employs an implicit neural representation to enable high-quality 3D reconstruction in an end-to-end, self-supervised manner. We demonstrate that X-RAI achieves state-of-the-art performance for small-scale datasets in simulation and challenging experimental settings and demonstrate its unprecedented ability to process large datasets containing millions of diffraction images in an online fashion. These abilities signify a paradigm shift in X-ray single particle imaging towards real-time reconstruction.

Computer science↗
DOE OSTI2026

Microwave-photonic control of optically accessible spin defects in diamond

A growing variety of optically accessible spin qubits have emerged in recent years as key components for quantum sensors, computers, and memories. However, the scalability of conventional spin-based quantum architectures remains limited by direct microwave delivery, which introduces thermal noise, electromagnetic crosstalk, and design constraints for cryogenic, high-field, and distributed systems. In this work, we present a unified framework for RF-over-fiber (RFoF) control of spins accessible through optically detected magnetic resonance (ODMR) spectroscopy of nitrogen-vacancy (NV) centers in diamond. The RFoF platform relies on an intensity-modulated 1310 nm laser carrying microwave signals over fiber and a high-speed photodiode for optical-to-electrical conversion to drive NV spin transitions. We report an RFoF power-conversion efficiency of 3.42% for an RF output PRF,out=-5.5 dBm at 2.87 GHz, enabling clear resolution of Zeeman splitting in

Rahman, M Reefaz [ORNL] (ORCID:0000000323541611)↗
DOE OSTI2025

Coherent Control over Nuclear Hyperpolarization Using an Optically Initializable Chromophore-Radical System

Chromophore radicals (CR) are emerging as important components for molecular quantum information science (QIS), especially in the context of quantum sensing. Here, we demonstrate that the optically hyperpolarized electrons in a 1,6,7,12-tetrakis(4-tert-butylphenoxy)-perylene-3,4,9,10-bis(dicarboximide) (tpPDI) covalently linked to a partially deuterated 1,3-bis(diphenylene)-d 16 -2-phenylallyl radical (BDPA-d 16 ) can be coherently manipulated via pulsed dynamic nuclear polarization (DNP) methods to transfer polarization to nuclear spins and back. Under light illumination at 85 K, electron hyperpolarization in BDPA is enhanced 2.1- to 2.4-fold over thermal polarization and lasts for more than 100 ms. By applying nuclear orientation via electron spin-locking (NOVEL) DNP, this optically amplified electron hyperpolarization was successfully transferred to a 1 H nuclear spin within the CR system and efficiently returned to the electron spin for readout via reverse-NOVEL. The NOVEL transfer efficiency of 65% amounts to a 688-fold nuclear spin hyperpolarization of the target nuclear spin, considering the 2.1-fold electron spin hyperpolarization. This reversible coherent manipulation of hyperpolarization transfer highlights the utility of CR systems to initialize and read out nuclear spin states in a disordered matrix at moderate cryogenic temperatures. Coupled with CRs’ environmental compatibility, tunability, and precise state initialization, these results highlight the promising role of nuclear spins in CRs for QIS applications, including quantum sensing and memory.

charge transfer↗
DOE OSTI2021

Martensitic transformation in superlattices of two non-transforming metals

A number of studies have shown that the coherent integration of a second non-transforming phase in martensitic materials results in unprecedented thermo-mechanical properties. We demonstrate the possibility of martensitic transformation by epitaxially combining two non-transforming materials, Mg (hexagonal closed packed) and MgLi (body centered cubic). Density functional theory calculations predict that MgLi/Mg superlattices undergo a transformation crystallographically equivalent to MgSc alloys and can be expected to result in finite temperature shape memory behavior. We predict the zero-temperature energy of the martensite phase to be 9.3 meV/atom lower than austenite for a 50–50 at. % MgLi/Mg nanolaminate, which is expected to result in a martensitic transformation temperature of approximately 150 K. This energy difference can be tuned between 4.9 and 18.1 meV/atom by varying the fraction of the pure Mg phase in the superlattice, potentially enabling the transformation from cryogenic to room and higher temperatures. While Li diffusion might limit the applications of the systems proposed, this work opens the door to a new approach to create martensitic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Strong spin–orbit quenching via the product Jahn–Teller effect in neutral group IV qubits in diamond

Abstract Artificial atom qubits in diamond have emerged as leading candidates for a range of solid-state quantum systems, from quantum sensors to repeater nodes in memory-enhanced quantum communication. Inversion-symmetric group IV vacancy centers, comprised of Si, Ge, Sn, and Pb dopants, hold particular promise as their neutrally charged electronic configuration results in a ground-state spin triplet, enabling long spin coherence above cryogenic temperatures. However, despite the tremendous interest in these defects, a theoretical understanding of the electronic and spin structure of these centers remains elusive. In this context, we predict the ground-state and excited-state properties of the neutral group IV color centers from first principles. We capture the product Jahn–Teller effect found in the excited state manifold to second order in electron–phonon coupling, and present a nonperturbative treatment of the effect of spin–orbit coupling. Importantly, we find that spin–orbit splitting is strongly quenched due to the dominant Jahn–Teller effect, with the lowest optically-active 3 E u state weakly split into m s -resolved states. The predicted complex vibronic spectra of the neutral group IV color centers are essential for their experimental identification and have key implications for use of these systems in quantum information science.

Materials Science↗
DOE OSTI2022

Cryogenic energy storage: Standalone design, rigorous optimization and techno-economic analysis

Energy storage allows flexible use and management of excess electricity and intermittently available renewable energy. Cryogenic energy storage (CES) is a promising storage alternative with a high technology readiness level and maturity, but the round-trip efficiency is often moderate and the Levelized Cost of Storage (LCOS) remains high. The complex flowsheets with intricate thermodynamics at cryogenic temperatures as well as the presence of multiple loops and refrigeration cycles pose considerable challenges for rigorous model-based design and optimization of CES systems. We present an optimization strategy that couples rigorous process simulation and Bayesian optimization with flowsheet decomposition and identification of hidden coupling constraints to optimally design standalone CES systems. Further refinement is done via a local search using the limited-memory Broyden–Fletcher–Goldfarb–Shanno algorithm. Here our results indicate that it is possible to achieve more than 52% round-trip efficiency and an LCOS of $153/MWh for a standalone 100 MW/400 MWh CES system limited to short-term storage with daily charging–discharging. However, a detailed techno-economic assessment reveals that the LCOS considering total capital investment may exceed $267/MWh when all direct and indirect costs of installation and operation are considered.

25 ENERGY STORAGE↗