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Results for “current-induced spin-orbit torque”

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At least 19 records

Walker Breakdown with a Twist: Dynamics of Multilayer Domain Walls and Skyrmions Driven by Spin-Orbit Torque

Current-induced dynamics of twisted domain walls and skyrmions in ferromagnetic perpendicularly magnetized multilayers is studied through three-dimensional micromagnetic simulations and analytical modeling. In this work, it is shown that such systems generally exhibit a Walker-breakdown-like phenomenon in the presence of a current-induced dampinglike spin-orbit torque. Above a critical current threshold, corresponding to typical velocities of the order of tens of m/s, domain walls in some layers start to precess with frequencies in the gigahertz regime, which leads to oscillatory motion and a significant drop in mobility. This phenomenon originates from complex stray field interactions and occurs for a wide range of multilayer materials and structures that include at least three ferromagnetic layers and finite Dzyaloshinskii-Moriya interaction. An analytical model is developed to describe the precessional dynamics in multilayers with surface-volume stray field interactions, yielding qualitative agreement with micromagnetic simulations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tuning Spin-Orbit Torques Across the Phase Transition in VO 2 /NiFe Heterostructure

The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. We report current-induced spin-orbit torques in VO 2 /NiFe heterostructures are investigated using spin-torque ferromagnetic resonance, where the VO 2 layer undergoes a prominent insulator-metal transition. A roughly twofold increase in the Gilbert damping parameter, α, with temperature is attributed to the change in the VO 2 /NiFe interface spin absorption across the VO 2 phase transition. More remarkably, a large modulation (±100%) and a sign change of the current-induced spin-orbit torque across the VO 2 phase transition suggest two competing spin-orbit torque generating mechanisms. The bulk spin Hall effect in metallic VO 2 , corroborated by the first-principles calculation of the spin Hall conductivity σ SH ≈ -10 4 ($\frac{\hbar}{e}$) Ω -1 m -1 , is verified as the main source of the spin-orbit torque in the metallic phase. The self-induced/anomalous torque in NiFe, with opposite sign and a similar magnitude to the bulk spin Hall effect in metallic VO 2 , can be the other competing mechanism that dominates as temperature decreases. For applications, the strong tunability of the torque strength and direction opens a new route to tailor spin-orbit torques of materials that undergo phase transitions for new device functionalities.

36 MATERIALS SCIENCE↗

Third harmonic characterization of antiferromagnetic heterostructures

Abstract Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of current-driven switching of antiferromagnets. For heavy-metal/ferromagnet systems, harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect and elucidate current-induced switching. However, harmonic measurement of spin-orbit torques has never been verified in antiferromagnetic heterostructures. Here, we report harmonic measurements in Pt/ α -Fe 2 O 3 bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/ α -Fe 2 O 3 emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The 20-nm Skyrmion Generated at Room Temperature by Spin-Orbit Torques

The discovery of magnetic skyrmions provides a promising pathway for developing functional spintronic memory and logic devices. Towards the future high-density memory application, nanoscale skyrmions with miniaturized diameters, ideally down to 20 nm are required. Using x-ray magnetic circular dichroism transmission microscopy, nanoscale skyrmions are observed in the [Pt/Co/Ir] 15 multilayer at room temperature. In particular, small skyrmions with minimum diameters approaching 20 nm could be generated by the current-induced spin-orbit torques. Through implementing material specific parameters, the dynamic process of skyrmion generation is further investigated by performing micromagnetic simulations. According to the simulation results, we find that both the tube-like Néel-type skyrmions and the bobber-like Néel-type skyrmions can be electrically generated. In particular, the size of the bobber-like Néel-type skyrmions can be effectively reduced by the spin-orbit torques, which leads to the formation of 20 nm Néel-type skyrmions. In conclusion, our findings could be important for understanding the formation dynamics of nanoscale Néel-type spin textures, skyrmions and bobber in particular, which could also be useful for promoting nanoscale skyrmionic memories and logic devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Electrical control of magnetism by electric field and current-induced torques

The remanent magnetization of ferromagnets has long been studied and used to store binary information. While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility of doing it by electrical means instead. In the 1990s, Slonczewski and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current generated by a first ferromagnet may be used to switch the magnetization of a second one. This discovery drove the development of spin-transfer-torque magnetic random-access memories (MRAMs). More recent fundamental research revealed other types of current-induced torques named spin-orbit torques (SOTs) and will lead to a new generation of devices including SOT MRAMs and skyrmion-based devices. Parallel to these advances, multiferroics and their magnetoelectric coupling, first investigated experimentally in the 1960s, experienced a renaissance. Dozens of multiferroic compounds with new magnetoelectric coupling mechanisms were discovered and high-quality multiferroic films were synthesized (notably of BiFeO 3 ), also leading to novel device concepts for information and communication technology such as the magnetoelectric spin-orbit (MESO) transistor. The story of the electrical switching of magnetization, which is discussed in this review, is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO transistors, microwave emitters, spin diodes, skyrmion-based devices, components for neuromorphics, etc.). This pas de deux has led to major scientific and technological breakthroughs in recent decades (such as the conceptualization of pure spin currents, the observation of magnetic skyrmions, and the discovery of spin-charge interconversion effects). As a result, this field has not only propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, in this review, recent advances in the control of magnetism by electric fields and by current-induced torques are covered. Fundamental concepts in these two directions are reviewed first, their combination is then discussed, and finally current various families of devices harnessing the electrical control of magnetic properties for various application fields are addressed. The review concludes by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science.

36 MATERIALS SCIENCE↗

Manipulation of the van der Waals Magnet Cr 2 Ge 2 Te 6 by Spin–Orbit Torques

In this work, we report measurements of current-induced thermoelectric and spin-orbit torque effects within devices in which multilayers of the semiconducting 2-dimensional van der Waals magnet Cr 2 Ge 2 Te 6 (CGT) are integrated with Pt and Ta metal overlayers. We show that the magnetic orientation of the CGT can be detected accurately either electrically (using an anomalous Hall effect) or optically (using magnetic circular dichroism) with good consistency. The samples exhibit large thermoelectric effects, but nevertheless the spin-orbit torque can be measured quantitatively using the angle-dependent second harmonic Hall technique. For CGT/Pt we measure the spin-orbit torque efficiency to be similar to conventional metallic-ferromagnet/Pt devices with the same Pt resistivity. The interfacial transparency for spin currents is therefore similar in both classes of devices. Our results demonstrate the promise of incorporating semiconducting 2D magnets within spin-orbitronic and magneto-thermal devices.

2D magnets↗

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque

Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.

42 ENGINEERING↗

Strongly heat-assisted spin–orbit torque switching of a ferrimagnetic insulator

Ferrimagnetic insulators promise low-power and high-speed spintronic applications, thanks to their insulating nature and fast dynamics near compensation points. In a ferrimagnetic insulator/heavy metal heterostructure, we investigate field- and current-induced magnetization switching at various temperatures and observe distinct magnetization switching behaviors owing to spin-orbit torque (SOT) and heating effect. We have realized SOT switching across the magnetization compensation temperature and discovered that the SOT switching is strongly heat-assisted: the temperature is always above the compensation temperature while the SOT switching happens in our case. Moreover, we show that the SOT efficiency is strongly magnetization-dependent by characterizing the current dependence of SOT efficiency and explaining the anomalous SOT switching back phenomena in the presence of a titled external field. Our results reveal the critical role of Joule heating on the dynamics of magnetic insulators and pave the way for the application of spintronic devices based on magnetic insulators.

36 MATERIALS SCIENCE↗

Room-Temperature, Current-Induced Magnetization Self-Switching in A Van Der Waals Ferromagnet

2D layered materials with broken inversion symmetry are being extensively pursued as spin source layers to realize high-efficiency magnetic switching. Such low-symmetry layered systems are, however, scarce. In addition, most layered magnets with perpendicular magnetic anisotropy show a low Curie temperature. Here, in this study, the experimental observation of spin–orbit torque magnetization self-switching at room temperature in a layered polar ferromagnetic metal, Fe 2.5 Co 2.5 GeTe 2 is reported. The spin–orbit torque is generated from the broken inversion symmetry along the c-axis of the crystal. These results provide a direct pathway toward applicable 2D spintronic devices.

36 MATERIALS SCIENCE↗

Observation of current-induced switching in non-collinear antiferromagnetic IrMn 3 by differential voltage measurements

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn 3 /Pt devices. A six-terminal double-cross device is constructed, with an IrMn 3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn 3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn 3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

36 MATERIALS SCIENCE↗

Switching of a Magnet by Spin-Orbit Torque from a Topological Dirac Semimetal

Recent experiments show that topological surface states (TSS) in topological insulators (TI) can be exploited to manipulate magnetic ordering in ferromagnets. In principle, TSS should also exist for other topological materials, but it remains unexplored as to whether such states can also be utilized to manipulate ferromagnets. In this paper, current-induced magnetization switching enabled by TSS in a non-TI topological material, namely, a topological Dirac semimetal α-Sn, is reported. The experiments use an α-Sn/Ag/CoFeB trilayer structure. The magnetization in the CoFeB layer can be switched by a charge current at room temperature, without an external magnetic field. The data show that the switching is driven by the TSS of the α-Sn layer, rather than spin-orbit coupling in the bulk of the α-Sn layer or current-produced heating. The switching efficiency is as high as in TI systems. This shows that the topological Dirac semimetal α-Sn is as promising as TI materials in terms of spintronic applications.

36 MATERIALS SCIENCE↗

Large Spin-Orbit Torque in 𝑎-Plane 𝛼−Fe 2 ⁢O 3 /Pt Bilayers

Realization of efficient spin-orbit torque switching of the Neel vector in insulating antiferromagnets is a challenge, often complicated by spurious effects. Quantifying the spin-orbit torques in antiferromagnet or heavy metal heterostructures is an important first step toward this goal. Here, we employ magneto-optic techniques to study damping-like spin-orbit torque (DL-SOT) in a-plane α-Fe 2 O 3 (hematite) with a Pt spin-orbit overlayer. We find that the DL-SOT efficiency is 2 orders of magnitude larger than reported in c- and r-plane hematite/Pt using harmonic Hall techniques. The large magnitude of DL-SOT is supported by direct imaging of current-induced motion of antiferromagnetic domains that happens at moderate current densities. Furthermore, our study introduces a new method for quantifying spin-orbit torque in antiferromagnets with a small canted moment and identifies a-plane α-Fe 2 O 3 as a promising candidate to realize efficient SOT switching.

Antiferromagnetism↗

Current-induced switching of thin film α - Fe 2 O 3 devices imaged using a scanning single-spin microscope

Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30-nm-thick, c-axis-oriented α-Fe 2 ⁢O 3 Hall devices using a diamond nitrogen-vacancy center scanning microscope. Using the canted moment of α-Fe 2⁢ O 3 as a magnetic handle on its Néel vector, we apply a saturating in-plane magnetic field to create a known initial state before letting the state relax in low field for magnetic imaging. Here, we repeat this procedure for different in-plane orientations of the initialization field. We find that the magnetic field images are characterized by stronger magnetic textures for fields along [$\overline{11}$20] and 11$\overline{2}$0, suggesting that despite the expected 3-fold magnetocrystalline anisotropy, our α-Fe 2 ⁢O 3 thin films have an overall in-plane uniaxial anisotropy. We also study current-induced switching of the magnetic order in α-Fe 2 ⁢O 3 . We find that the fraction of the device that switches depends on the current pulse duration, amplitude, and direction relative to the initialization field.

36 MATERIALS SCIENCE↗

Ultra-thin lithium aluminate spinel ferrite films with perpendicular magnetic anisotropy and low damping

Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic anisotropy have been identified as critical to advancing spin-based electronics by significantly reducing the threshold for current-induced magnetization switching while enabling new types of hybrid structures or devices. Here, we have developed a new class of ultra-thin spinel structure Li 0.5 Al 1.0 Fe 1.5 O 4 (LAFO) films on MgGa 2 O 4 (MGO) substrates with: 1) perpendicular magnetic anisotropy; 2) low magnetic damping and 3) the absence of degraded or magnetic dead layers. These films have been integrated with epitaxial Pt spin source layers to demonstrate record low magnetization switching currents and high spin-orbit torque efficiencies. These LAFO films on MGO thus combine all of the desirable properties of ferromagnetic insulators with perpendicular magnetic anisotropy, opening new possibilities for spin based electronics.

36 MATERIALS SCIENCE↗

Spin–orbit torques in structures with asymmetric dusting layers

Current-induced spin–orbit torques (SOTs) in heavy metal/ferromagnet heterostructures have emerged as an efficient method for magnetization switching with applications in nonvolatile magnetic memory and logic devices. However, experimental realization of SOT switching of perpendicular magnetization requires an additional inversion symmetry breaking, calling for modifications of the conventional SOT heterostructures. In this work, we study SOTs and deterministic switching of perpendicular magnetization by inserting different asymmetric dusting layers at the heavy metal/ferromagnet interface. Similar to the previous works with lateral structural asymmetry, we study the emergence of current-induced perpendicular effective magnetic fields (H z eff ). By examining three different material combinations of heavy metal/dusting layers (W/IrMn, Pt/IrMn, and W/Ta), we shed light on the origins of H z eff ; we show that H z eff is generically created in all the studied asymmetric structures, has a close correlation with the interfacial magnetic anisotropy, and is independent of the signs of spin Hall angles of the materials. Furthermore, we show that the induction of H z eff enables field-free deterministic SOT switching of perpendicular magnetization. Our results can be used in designing SOT heterostructures for practical applications in nonvolatile technologies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗

Resolving Discrepancies in Spin-Torque Ferromagnetic Resonance Measurements: Lineshape versus Linewidth Analyses

When spin-orbit torques are measured using spin-torque ferromagnetic resonance, two alternative ways of analyzing the results to extract the torque efficiencies—lineshape analysis and analysis of the change in linewidth versus direct current—often give inconsistent results. We identify a source for these inconsistencies. We show that fits of spin-torque ferromagnetic resonance data to the standard analysis framework leave significant residuals that we identify as due to (i) current-induced excitations of a small volume of magnetic material with magnetic damping much larger than that of the bulk of the magnetic layer, which we speculate is associated with the heavy-metal–magnet interface and (ii) oscillations of the sample magnetization at the modulation frequency due to heating. Here, the dependence of the residual signals on direct current can interfere with an accurate extraction of spin-torque efficiencies by the linewidth method. We show that the discrepancies between the two types of analysis can be largely eliminated by extrapolation of the window of magnetic fields used in the linewidth fits to small values so as to minimize the influence of the residual signals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large Spin-Orbit-Torque Efficiency and Room-Temperature Magnetization Switching in Sr Ir O 3 / Co-Fe-B Heterostructures

Spin-orbit-torque (SOT) switching is a potentially energy-efficient mechanism by which electrical current can control magnetization. We demonstrate room-temperature SOT switching in nanometer-thick Co⁢Fe⁢B/Sr⁢Ir⁢O 3 bilayers despite the amorphous nature of CoFeB and the interface. This behavior is attributed to the large spin Hall angle in Sr⁢Ir⁢O 3 as well as high spin transmission at the interface that contribute to the SOT efficiency ξ SOT . Our bilayers exhibit large ξ SOT of up to 1.4 and effective spin Hall conductivity of 0.9 ×10 5 (ℏ/2e)Ω –1 ⁢m –1 . In our bilayers, we observe unidirectional magnetoresistance and current-induced magnetization switching with a low critical current density of 1.38 ×10 10 A/m 2 at room temperature. Finally, our results are promising for heterostructures combining technologically relevant CoFeB with high spin-orbit-coupling oxides.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗