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Results for “deep-reactive ion etching”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2011

Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

Silicon micromachining↗

NASA NTRS2017

Design, Fabrication and Testing of a Modulated Metasurface Antenna at 300 GHz

This paper describes the design and realization of a modulated metasurface (MTS) antenna at 300 GHz. To overcome the hurdles associated with the use of dielectric substrates in the sub-millimeter wave range, we propose an MTS structure which consists of an array of metalized cylinders placed on a ground plane. The metal cylinders are arranged in a square lattice with sub-wavelength unit cell size. This MTS topology has been successfully used to design a spiral MTS antenna. The resulting structure has been micromachined out of a silicon wafer by means of deep reactive ion etching (DRIE). The performance of the antenna has been verified by full-wave simulations, and measurements will be available at the time of the conference.

surface waves↗

NASA NTRS2016

Silicon Micromachined Modulated Metasurface Antennas in the Terahertz Range

This paper explores the capabilities of a class of metasurface (MTS), which consists of metalized cylinders on a ground plane, for the realization of modulated MTS antennas at terahertz (THz) frequencies. The proposed structure is particularly appropriate for being micromachined out of a silicon wafer by means of deep reactive ion etching (DRIE). The constraints that DRIE imposes in the design of the MTS unit cell are discussed, along with the advantages of silicon micromachined modulated MTSs with respect to other fabrication approaches in the THz range.

deep-reactive ion etching↗