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Results for “density of states”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Processing dependence of metal/tunnel-oxide/silicon junctions

The effects of process variations on the fixed-charge density, interface-state density, and tunneling properties of tunnel oxides on (100) silicon are discussed. Annealing the oxide in nitrogen reduces the fixed-charge and interface-state densities substantially, but also causes a marked increase in oxide capacitance. Anneals in forming gas before metallization alter the interface-state distribution and decrease the insulating qualities of the tunneling oxides. Postmetallization anneals in forming gas reduce the interface-state density to 1 x 10 to the 11th e/sq cm V or below, and appear not to affect the current through the oxide. No evidence for metal-induced interface states is observed.

Dressendorfer, P. V.↗
NASA NTRS1977

Band structure of W and Mo by empirical pseudopotential method

The empirical pseudopotential method (EPM) is used to calculate the band structure of tungsten and molybdenum. Agreement between the calculated reflectivity, density of states, density of states at the Fermi surface and location of the Fermi surface from this study and experimental measurements and previous calculations is good. Also the charge distribution shows the proper topological distribution of charge for a bcc crystal.

Sridhar, C. G.↗
NASA NTRS1972

Temperature dependence of the electron density of states and dc electrical resistivity of disordered binary alloys.

A model calculation of the temperature dependence of the electronic density of states and the electrical conductivity of disordered binary alloys, based on the coherent-potential approximation is made by introducing thermal disorder in the single-band model (Velicky and others). Thermal disorder is found to broaden and smear the static-alloy density of states. The electrical resistivity in weak-scattering alloys always increases with temperature. However, in the strong-scattering case, the temperature coefficient of resistivity can be positive, zero, or negative, depending on the location of the Fermi energy.-

Chen, A.-B.↗
NASA NTRS1976

Strain effect on the electronic density of states and dc conductivity of disordered binary alloys

A single-band model calculation is developed for the effect of strain on the temperature variation of the electronic density of states and the electrical onductivity of disordered binary alloys. Experimentally, strain has only a small effect on the temperature variation of the conductivity. Shifts in the Fermi level and distortions of the density of states under different strains are found from the calculations. The small change in the temperature variation of conductivity under strain is a result of competition between these two effects. Methods to extract physical parameters characterizing alloys from measurements of the strain and temperature variation of the resistivity are discussed. Suggestions are also made about materials-selection criteria for strain-gauge applications.

Hwang, H.-C.↗
NASA NTRS1975

Effects of radiation on charge-coupled devices

The effects of 1 MeV electron irradiation upon the performance of two phase, polysilicon aluminum gate CCDs are reported. Both n- and p-surface channel and n-buried channel devices are investigated using 64- and 128-stage line arrays. Characteristics measured as a function of radiation dose include: Transfer inefficiency, threshold voltage, field effect mobility, interface state density, full well signal level and dark current. Surface channel devices are found to degrade considerably at less than 10 to the 5th power rads (Si) due to the large increase in fast interface state density caused by radiation. Buried channel devices maintain efficient operation to the highest dose levels used.

Carnes, J. E.↗
NASA NTRS1977

Optical Line Radiation from Uranium Plasmas

The radiative energy current due to line radiation is calculated in a U 235 plasma over a temperature range of 5000 K to 8000 K. Also a variation in the neutron flux of 2 x 10 to the 12th power neutrons/ (sq cm-sec) to 2 x 10 to the 16th power neutrons/(sq cm-sec) is considered. The plasma forms a cylinder with a diameter and height of one meter. To calculate the radiative-energy current, a rate equation formalism is developed to solve for the atomic state densities along with a model for the energy levels in neutral and singly ionized uranium. Because the electron states in uranium lie below 5eV, recombination is the principle excitation mechanism. At and above 6000 K, inversions were found, and at all temperatures the line radiation at line center was greater than the corresponding black-body radiation. There are negligible differences in the radiative-energy current at 6000 K for variations in the neutron flux. The average opacity, which varied from 100 to 100,000 gm/sq cm, over the frequency range of line radiation is calculated.

Maceda, E. L.↗
NASA NTRS1980

Anorthite - Thermal equation of state to high pressures

New shock-wave data are presented for anorthite from which a full high-temperature, high-pressure equation of state is derived. Whereas anorthite has relatively low values of thermal expansion and Grueneisen parameter at zero pressure, it is found that these attain relatively high values in the high density state corresponding to the high-pressure phase Hugoniot but decrease upon compression as expected. It is noted that higher order anharmonic contributions decrease more rapidly with pressure and that the thermal expansion therefore saturates to a high temperature value at pressures above about 100 GPa. Reduction of the Hugoniot data permits shock temperatures to be calculated; it also yields a principal adiabat for the high pressure branch of the Hugoniot. The initial bulk modulus of this adiabat is essentially identical to that of anorthite, whereas the initial density is about 3.40 Mg/cu m.

Jeanloz, R.↗
NASA NTRS1974

Equation of state at ultrahigh densities. I

Particular attention is given to the physics involved in the derivation of an equation of state for a density range from 10 g/ccm to 200,000 billion g/ccm and for the density region from 200,000 billion g/ccm to 2,000,000 billion g/ccm. Conditions in a high density regime with densities exceeding 500,000 billion g/ccm are examined. Equations of state for a gas of pure neutrons and for a gas of nucleons, electrons, and hyperons are considered.

Canuto, V.↗