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DOE OSTI2025

Layer-by-layer growth of graphene oxide multilayers using robust interlayer linking chemistry. 1. Zr-bisphosphates

Graphene oxide (GO) holds substantial interest because of its utility in applications ranging from chemical sensing to catalysis and energy storage. We report on the layer-by-layer formation of graphene oxide phosphate (P-GO) multilayers on silica and oxidized silicon supports, with the layers connected via Zr-bisphosphate (ZP) linking chemistry. Layers were grown either directly by ZP linkages between P-GO sheets, or with the use of 1,4-phenylene bisphosphate (BP1) or [1,1′-biphenyl]4,4′-diyl bisphosphate (BP2). The layers have been characterized using optical null ellipsometry, X-ray photoelectron spectroscopy (XPS), UV-visible absorption spectroscopy and scanning electron microscopy (SEM). There is a linear dependence of assembly thickness on the number of layers deposited and the integrated area of the optical absorbance bands also increases linearly with number of layers deposited. XPS data provides information on interlayer linking stoichiometry. SEM images provide insight into the morphology of the adlayers, suggesting the structure and length of the interlayer linking moieties used in the multilayer assembly play a significant role in the organization of the resulting system.

Mukherjee, Neelanjana [Michigan State University, ↗

DOE OSTI2022

Quantifying Moss Response to Metal Contaminant Exposure Using Laser-Induced Fluorescence

Tracing sources of contamination, including potentially toxic elements (PTEs), has historically been achieved through sampling and analysis of soil or biota, which are labor-intensive, costly, and destructive methods. Thus, availability of a non-destructive in situ remote sensing method for monitoring metals deposited in biota is of great interest. Laser-induced fluorescence (LIF) is an emerging spectroscopic and imaging technique that documents changes in molecular energy level in plants as a biological response to metal contamination. For a proof-of-concept study and preliminary experiment, moss was selected for experimentation due to its long history of use in tracing atmospheric deposition of PTEs. Consecutive treatments of copper chloride (CuCl2) were administered to three moss samples, simulating wet deposition every 48 h over 10 days until reaching cumulative Cu concentrations of 2.690 to 8.075 μmol/cm2. While these Cu amounts are above environmentally relevant concentrations, they allowed the best conditions for testing and fine tuning of the imaging and data processing protocols presented in this paper. Moss fluorescence was induced using both 532 nm green and 355 nm UV lasers. A CMOS camera captured images of the LIF response, and red–green–blue (RGB) decimal code values were extracted for each pixel in the images, and pixel densities of color channels from treated and untreated moss samples were compared. Results show a shift towards lower color decimal codes corresponding to increased Cu concentration. We developed and contrasted multiple quantitative analyses of color distributions and demonstrated that LIF shows great promise for remote sensing of Cu accumulation in moss at μmol/cm2 levels. Though currently, the method would be limited to highly toxic sites, it illustrates the possibility and provides a framework for development of higher-sensitivity methods to detect nmol/cm2 that are viable for urban contamination level monitoring.

63 RADIATION, THERMAL, AND OTHER ENVIRON. POLLUTAN↗

DOE OSTI2023

Epitaxial growth and characterization of magnesium gallate (MgGa 2 O 4 ) thin films by pulsed laser deposition

To advance high power device application of MgGa 2 O 4 , it is imperative to achieve crystalline epitaxial thin films and to observe its materials’ characteristics within a wide range of growth conditions. However, there is no published work on the growth of this promising ultrawide bandgap material till this day. In this study, we report the crystalline growth of MgGa 2 O 4 thin films on c-plane (006) sapphire substrates using the pulsed laser deposition (PLD) technique in a broad range of temperature and oxygen pressure. The temperature range for this crystalline growth was within the temperature range of 300°C to 700°C and a pressure range of 1x10 -1 to 1x10 -3 Torr. Within this parameter range, the structural, chemical, optical, and surface property of MgGa 2 O 4 thin films have been investigated. Specifically, the acquired XRD patterns confirmed the film growth along the [111] preferential crystal orientation in the lattice. Here, the rocking curve measurement of the prominent (222) plane showed an increasing trend of the crystallinity with growth temperature and pressure. Furthermore, the XRD phi (φ) scan demonstrated the six-fold rotational symmetry of the MgGa 2 O 4 films and the epitaxial relationship of 30° between the film and the sapphire substrate. The XPS spectra confirmed the presence of +2 and +3 oxidation state for Mg and Ga respectively, in the films. The direct bandgap of MgGa 2 O 4 films was obtained ~5.27±0.03 eV by analyzing the UV-Vis absorbance spectra using the Tauc equation. The SEM images exhibited a granular surface morphology of the MgGa 2 O 4 films with an increasing trend in the grain size from low to high temperature and pressure. The refractive index and thickness of these films were in the range of ~1.90±0.02 and ~70±2.0 nm, respectively determined by fitting the spectroscopic ellipsometry data.

36 MATERIALS SCIENCE↗