Meteoroid penetration detector development program, volume 1 Final summary report
Meteoroid penetration detector development program
Del Gray, R. O. M.↗
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Pyroelectric detector development for the Radiation Measurement system
A new class of high detectivity pyroelectric detectors developed for optimization of the radiation measurement system within the framework of the Atmospheric Radiation Measurement program is described. These devices are intended to provide detectivities of up to about 10 exp 11 cm Hz exp 0.5/W with cooling to about 100 K required for the detector focal plane.
Hubbard, G. S.↗
Far-Infrared Blocked Impurity Band Detector Development
DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth's energy budget from space. During the first year of this effort we have designed, fabricated, and evaluated pilot Blocked Impurity Band (BIB) detectors in both silicon and germanium, utilizing pre-existing customized detector materials and photolithographic masks. A second-year effort has prepared improved silicon materials, fabricated custom photolithographic masks for detector process, and begun detector processing. We report the characterization results from the pilot detectors and other progress.
Hogue, H. H.↗
Solid state detector developments
Surface barrier and avalanche diode detectors for spaceborne particle detection
Williams, D. J.↗
Mid-infrared detector development for the Origins Space Telescope
Mid-infrared detector arrays operating from 2.8 to 20 μm are baselined in the design of the Origins Space Telescope Mid-Infrared Spectrometer Instrument. This instrument is designed to detect and measure the spectral signatures of gases of biogenic origin in the atmospheres of exoplanets as they transit their host stars. In order to make these detections, the detector array’s pixels need to have high-signal stability when exposed to a constant flux in multiple time-series integration over a typical transit time of a few hours. With the use of a densified pupil spectrometer design, pointing effects can be mitigated because pointing variations do not displace spectra on the detector and each wavelength of light is averaged over a large number of pixels, giving good spectrophotometric stabilities. The current state-of-the-art detector arrays do not achieve these stabilities, although with a feasible development program this level of performance should be achievable. Three detector technologies are under consideration for this development, HgCdTe arrays, Si:As impurity band conduction arrays, and transition edge super-conductor bolometer arrays. We primarily treat the HgCdTe technology development, but also introduce the paths forward for the other two technologies. After a few years-long investigative programs, a down-select will be undertaken to select the flight technology.
Astronomy↗
Moderate temperature detector development
The development of (Hg, Cd)Te detectors for 8 to 12 micrometer wavelength regions capable of achieving significantly improved sensitivity at noncryogenic temperatures is discussed.
Sood, A. K.↗
Leak detector development Final report
Design and fabrication of halogen leak detector based on gradient sensing concept
Source record↗
The 100 micron detector development program
An effort to optimize gallium-doped germanium photoconductors (Ge:Ga) for use in space for sensitive detection of far infrared radiation in the 100 micron region is described as well as the development of cryogenic apparatus capable of calibrating detectors under low background conditions.
Moore, W. J.↗
Two-micron Detector Development using Sb-based Material Systems
NASA Langley Research Center (LaRC), in partnership with the University of Delaware (UD), developed AlGaAsSb/InGaAsSb custom-designed phototransistors in the 0.6-2.5 micron wavelength range for applications to laser remote sensing. The phototransistor s performance greatly exceeds the previously reported results at this wavelength range in the literature. The performances of the custom-designed phototransistor, such as responsivity, detectivity, and gain, are improved significantly as compared to the previously published detectors as well as commercial detectors. Detection in the 0.6- to 2.5- micron broadband with a single phototransistor will result in reduction or elimination of heavy and complex optical components now required for multiple wavelength detection in atmospheric remote sensors resulting in smaller, lighter, simpler instruments with higher performance. This high performance broadband phototransistor will eliminate the need for high power laser for active remote sensing and also the Si (1.0- micron cutoff) and InGaAs (extended 2.3- micron cutoff) detectors. The developed broadband phototransistor will be applicable for the next generation of space-based Earth observations and other planetary instruments for active and passive remote sensing with substantial reduction in size, complexity, and weight to measure water vapor, methane, and carbon dioxide in planetary atmospheres as well as aerosol, cloud, water vapor, O2, CO, and CO2 for a broad range of applications to Earth and Space Science Missions under Science Mission Directorate (SMD) research programs.
Abedin, M. N.↗
Cosmic ray positron research and silicon track detector development
The purpose was to conduct research on: (1) position sensing detector systems, particularly those based upon silicon detectors, for use in future balloon and satellite experiments; and (2) positrons, electrons, proton, anti-protons, and helium particles as measured by the NASA NMSU Balloon Magnet Facility.
Jones, W. Vernon↗
Moderate temperature detector development
P-side backside reflecting constant, photodiode characterization, and photodiode diffusion and G-R currents were investigated in an effort to develop an 8 m to 12 m infrared quantum detector using mercury cadmium telluride. Anodization, phosphorus implantation, and the graded band gap concept were approaches considered for backside formation. Variable thickness diodes were fabricated with a back surface anodic oxide to investigate the effect of this surface preparation on the diffusion limited zero bias impedance. A modeling technique was refined to thoroughly model diode characteristics. Values for the surface recombination velocity in the depletion region were obtained. These values were improved by implementing better surface damage removal techniques.
Marciniec, J. W.↗
Status of the isophot detector development
ISOPHOT is one of the four focal plane experiments of the European Space Agency's Infrared Space Observatory (ISO). Scheduled for a 1993 launch, it will operate extrinsic silicon and germanium photoconductors at low temperature and low background during the longer than 18 month mission. These detectors cover the wavelength range from 2.5 to 200 microns and are used as single elements and in arrays. A cryogenic preamplifier was developed to read out a total number of 223 detector pixels.
Wolf, J.↗
Superlattice Barrier Infrared Detector Development at the Jet Propulsion Laboratory
We report recent efforts in achieving state-of-the-art performance in type-II superlattice based infrared photodetectors using the barrier infrared detector architecture. We used photoluminescence measurements for evaluating detector material and studied the influence of the material quality on the intensity of the photoluminescence. We performed direct noise measurements of the superlattice detectors and demonstrated that while intrinsic 1/f noise is absent in superlattice heterodiode, side-wall leakage current can become a source of strong frequency-dependent noise. We developed an effective dry etching process for these complex antimonide-based superlattices that enabled us to fabricate single pixel devices as well as large format focal plane arrays. We describe the demonstration of a 1024x1024 pixel long-wavelength infrared focal plane array based the complementary barrier infrared detector (CBIRD) design. An 11.5 micron cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 ?m cutoff focal plane array are also presented.
superlattice↗
The Athena/X-IFU, from Detector Development to Scientific Feasibility Studies via Simulations
The investigation of the physical hot and energetic phenomena in the Universe will further improve our understanding of the assembly of the largest structures and massive halos of galaxies, and of the role of black holes in shaping the Universe as we see it. Spatially resolved X-ray high-resolution spectroscopy will be a crucial tool to achieve these scientific goals. The X-IFU instrument onboard the Athena observatory will provide us with these capabilities through the use of arrays of Transition edge microcalorimeters detectors. These superconducting devices will deliver the required exquisite spectral resolution needed to achieve the core science objectives, such as the characterization of turbulence and bulk motions in the hot gaseous atmospheres of groups and clusters of galaxies in order to unveil the process of large scale structures assembly. I will present the Transition Edge Sensors principle, the status of the instrumental development for the X-IFU instrument, and discuss their performance in view of the scientific objectives of the Athena mission. I will further present the case of a feasibility study and optimisation of the observing strategy for the characterization of the internal dynamics of the intra-cluster medium, through the use of mock simulations of observations with the X-IFU instrument.
Sophie Beaumont↗
The III-V photocathode - A major detector development.
Description of new (III-V) photocathodes which show improvements in sensitivity of as much as ten to a hundred times over conventional cathodes in the near infrared and useful improvements at shorter wavelengths. The development stems from a combination of basic knowledge of the photoemission process, gained in the 1950s, and the advancing understanding of the technology of III-V materials, in the 1960s. The superior performance of these cathodes is due to the fact that the vacuum level at the surface lies below the bottom of the conduction band in the bulk of the material. Consequently, the threshold of response is set by the III-V bandgap. The bandgap (and the threshold of response) can be varied by alloying different III-V materials together. A reduction in thermionic emission is realized with these cathodes. At present no semitransparent III-V cathodes with comparably interesting performance are available. The problems hindering further improvements, as well as the problems of placing these cathodes in practical multipliers and image tubes, are discussed briefly.
Spicer, W. E.↗
Design support and analysis for infrared detector development
Explore the source record for details and available documents.
Dobrov, W. I.↗
UCSD IR detector development programs
A diagram is presented for the UCSD low background infrared spot scanner. The spot scanner parameters are outlined. The testing that is planned for the charge injection device is outlined. The Aerojet linear 128 element array is also outlined.
Jones, B.↗
High Resolution X-Ray (HRX) Detector Development
During the performance period of this grant we carried out the following activities: (1) High resolution CCD camera specification and acquisition; (2) Design of CCD camera electronics; (3) Image acquisition hardware and related software development; (4) Design and construction of vacuum-compatible high resolution camera. These activities are described in detail in the report.
Golub, Leon↗