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Results for “detector performance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Charge-coupled-device X-ray detector performance model

A model that predicts the performance characteristics of CCD detectors being developed for use in X-ray imaging is presented. The model accounts for the interactions of both X-rays and charged particles with the CCD and simulates the transport and loss of charge in the detector. Predicted performance parameters include detective and net quantum efficiencies, split-event probability, and a parameter characterizing the effective thickness presented by the detector to cosmic-ray protons. The predicted performance of two CCDs of different epitaxial layer thicknesses is compared. The model predicts that in each device incomplete recovery of the charge liberated by a photon of energy between 0.1 and 10 keV is very likely to be accompanied by charge splitting between adjacent pixels. The implications of the model predictions for CCD data processing algorithms are briefly discussed.

Bautz, M. W.↗
NASA NTRS1978

Infrared detector performance in the Shuttle Infrared Telescope Facility /SIRTF/

The limitations imposed on infrared detectors for SIRTF are quite different from those imposed on ground-based, balloon-borne, or aircraft-borne systems. The paper examines the limitations and provides performance predictions corresponding to SIRTF conditions. Detector parameters typical of an infrared camera are used. The detector size is taken to be of the order of the diffraction-limited spot, frequency response is taken to correspond to a fraction of a second or less time constant, and spectral definition is provided by multilayer dielectric filters, inductive or capacitive grids, intrinsic absorption, or a combination of these. A nominal 10-micron bandwidth is assumed. The discussion covers atmospheric absorption and emission, zodiacal dust radiance, Shuttle contaminants, telescope self-emission, charged particle radiation, clear environment detector performance, and trapped radiation effects. It is concluded that the SIRTF design and operating conditions will allow current and near-term state-of-the-art detectors to reach their performance limits with SIRTF at a temperature of 10-12 K.

Mccarthy, S. G.↗
NASA NTRS1992

The STIS MAMA status: Current detector performance

The STIS (Space Telescope Imaging Spectrograph) is a second generation Hubble instrument scheduled to fly in 1997. Through a variety of modes, the instrument will provide spectral resolutions from R approximately 50 in the objective spectroscopy mode to 100,000 in the high resolution echelle mode in the wavelength region from 115 to 1000 nm. In the UV the instrument employs two MAMA (Multimode Anode Microchannel plate Arrays) 1024 by 1024 pixel detectors, which provide high DQE (Detective Quantum Efficiency), and good dynamic range and resolution. The current progress and performance of these detectors are reported, illustrating that the technology is mature and that the performance is very close to flight requirements.

Danks, A. C.↗
NASA NTRSDate not supplied

Effect of Space Radiation on TES Detectors Performance

The Athena mission and its X-IFU instrument (X-ray Integral Field Unit) will be positioned at the Sun-Earth Lagrangian point L1, where it will be subject to solar wind (low flux plasma of 95% protons and 5% alpha particles) with energy below 0.1 MeV, and to galactic cosmic rays and solar flares (energetic protons, alpha particles, and electrons) with energies up to hundreds of MeV for protons and the GeV for heavier ions. Some of these particles will go through the satellite and hit the focal plane assembly and hence the detectors. These detectors will be TES (Transition-edge sensor) microcalorimeters, flown for the first time in such an environment. In order to ensure the performance of this type of detectors throughout the duration of such mission, it is critical to study the impact of the radiation on their behavior. Indeed, although a lot of reference material exist for semiconductor detectors such as CCDs, little is currently known about the impact of radiation on TES detectors. These energetic events could cause local heating or damage to the detectors and affect their performance. In this work, we describe how we designed a test campaign to assess the impact of L1 radiation on TES detectors for Athena/X-IFU-like missions and present the results of the tests. Analyses includes assessing changes in the pulse shapes and energy resolution of the detectors measured at 55 mK after several radiation dose steps performed at 4 K.

Sophie Beaumont↗
NASA NTRS2019

Development of High-Performance Detector Technology for UV and IR Applications

Sensing and imaging for ultraviolet (UV) and infrared (IR) bands has many applications for NASA, defense, and commercial systems. Recent work has involved developing UV avalanche photodiode (UVAPD) arrays with high gain for high resolution imaging. Various GaN/AlGaN p-i-n UV-APDs have been fabricated from epitaxial structures grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates with avalanche gains greater than 5×105, and high responsivities. Similarly, the IR spectral band is useful for measuring ocean temperatures, atmospheric aerosols, forest fires, etc. We are also developing room temperature operating graphene-enhanced PbSe midwave infrared (MWIR) detectors and focal plane arrays (FPAs). These compact and low-cost MWIR sensors can benefit various NASA remote sensing applications. Here we present recent results from these high performance UV- and IR-band detector and FPA technologies.

Sood, Ashok K.↗
NASA NTRS1988

Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

Kenimer, R. L.↗
NASA NTRS2018

Development of High Performance Detector Technology for UV and Near IR Applications

Sensing and imaging for ultraviolet (UV) and nearinfrared (NIR) bands has many applications forNASA, defense, and commercial systems. Recentwork has involved developing UV avalanchephotodiode (UV-APD) arrays with high gain for highresolution imaging. Various GaN/AlGaN p-i-n (PIN)UV-APDs have been fabricated from epitaxialstructures grown by MOCVD on GaN substrates withavalanche gains higher than 5 x 10(exp 5), and significantlyhigher responsivities. Likewise, the SiGe materialsystem allows the demonstration of high-performancedetector array technology that covers the 0.5 to 1.7 mwavelength range for visible and NIR bands ofinterest. We have utilized SiGe fabrication technologyto develop Ge based PIN detector devices on 300 mmSi wafers. We will discuss the theoretical andexperimental results from electrical and opticalcharacterization of the detector devices with variousn+ region doping concentrations to demonstrate low dark currents below 1 uA at -1 V and high photocurrent. Recent results from these detectorarrays for UV and NIR detection will be presented.

IR↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗
NASA NTRS2001

The Effect of Twin Boundaries on the Spectroscopic Performance of CdZnTe Detectors

Most single grains in cadmium zinc telluride (CdZnTe) grown by the high-pressure Bridgman (HPB) technique contain multiple twin boundaries. As a consequence, twin boundaries are one of the most common macroscopic material defects found in large area (400 to 700 sq mm) CdZnTe specimens obtained from HPB ingots. Due to the prevalence of twin boundaries, understanding their effect on detector performance is key to the material selection process. Twin boundaries in several 2 mm thick large area specimens were first, documented using infrared transmission imaging. These specimens were then fabricated into either 2 mm pixel or planar detectors in order to examine the effect of the twin boundaries on detector performance. Preliminary results show that twin boundaries, which are decorated with tellurium inclusions, produce a reduction in detector efficiency and a degradation in resolution. The extent of the degradation appears to be a function of the density of tellurium inclusions.

Parker, Bradford H.↗
NASA NTRSDate not supplied

Long Term Performance Stability of TES Detectors

We are developing superconducting transition-edge sensor (TES) microcalorimeter arrays for a variety of applications such as ground-based laboratory astrophysics experiments and next generation space-based X-ray missions. These detectors can provide X-ray spectral information with an unprecedent resolution of ~2 eV at 6 keV and have been selected for the X-ray Integral Field Unit (X-IFU) instrument of ESA’s large flagship mission Athena. To maintain detector performance over the lifetime of the mission, it is important to understand whether environmental conditions that the detector may be exposed to will affect its properties over time. This “aging” begins right after the array leaves the fabrication environment, with potential exposure to humidity, oxygen, or elevated temperatures which may affect the detector performance. In a few prior arrays we have observed increased fall times in the pulse shape and/or the introduction of anomalous low energy tails on the X-ray spectrum. This is thought to be an indication of “aging” on chips exposed to such conditions, causing e.g. changes in the absorber properties. In this contribution, we report on a systematic characterization of TES properties, before and after exposing the chip to various controlled temperature and humidity levels and assess the changes in the measured transition and pulse shapes, energy resolution, and spectral redistribution.

S Beaumont↗
NASA NTRS1982

Theory and status of high performance heterodyne detectors

Both near-ideal heterodyne performance and an enhancement of CO2 laser heterodyne system capabilities have been obtained by means of recently developed wide-bandwidth HgCdTe photodiodes and photoconductors. Design considerations, including limitations due to various HgCdTe material parameters, performance predictions, and the current development status of wide bandwidth HgCdTe photodiodes are presented. Attention is also given to the uses and recent results obtained for p-type HgCdTe photoconductors in the role of elevated temperature photomixers.

Spears, D. L.↗
NASA NTRS2011

AC Read-Out Circuits for Single Pixel Characterization of TES Microcalorimeters and Bolometers

SRON is developing Frequency Domain Multiplexing (FDM) for the read-out of transition edge sensor (TES) soft x-ray microcalorimeters for the XMS instrument of the International X-ray Observatory and far-infrared bolometers for the SAFARI instrument on the Japanese mission SPICA. In FDM the TESs are AC voltage biased at frequencies from 0.5 to 6 MHz in a superconducting LC resonant circuit and the signal is read-out by low noise and high dynamic range SQUIDs amplifiers. The TES works as an amplitude modulator. We report on several AC bias experiments performed on different detectors. In particular, we discuss the results on the characterization of Goddard Space Flight Center x-ray pixels and SRON bolometers. The paper focuses on the analysis of different read-out configurations developed to optimize the noise and the impedance matching between the detectors and the SQUID amplifier. A novel feedback network electronics has been developed to keep the SQUID in flux locked loop, when coupled to superconducting high Q circuits, and to optimally tune the resonant bias circuit. The achieved detector performances are discussed in view of the instrument requirement for the two space missions.

Gottardi, L.↗