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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint

Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.

33 ADVANCED PROPULSION SYSTEMS↗

A second‐generation virtual‐pinhole PET device for enhancing contrast recovery and improving lesion detectability of a whole‐body PET/CT scanner

Purpose We have developed a second‐generation virtual‐pinhole (VP) positron emission tomography (PET) device that can position a flat‐panel PET detector around a patient's body using a robotic arm to enhance the contrast recovery coefficient (CRC) and detectability of lesions in any region‐of‐interest using a whole‐body PET/computed tomography (CT) scanner. Methods We constructed a flat‐panel VP‐PET device using 32 high‐resolution detectors, each containing a 4 4 MPPC array and 16 16 LYSO crystals of 1.0 1.0 3.0 mm 3 each. The flat‐panel detectors can be positioned around a patient's body anywhere in the imaging field‐of‐view (FOV) of a Siemens Biograph 40 PET/CT scanner by a robotic arm. New hardware, firmware and software have been developed to support the additional detector signals without compromising a scanner's native functions. We stepped a 22 Na point source across the axial FOV of the scanner to measure the sensitivity profile of the VP‐PET device. We also recorded the coincidence events measured by the scanner detectors and by the VP‐PET detectors when imaging phantoms of different sizes. To assess the improvement in the CRC of small lesions, we imaged an elliptical torso phantom measuring 316 228 162 mm 3 that contains spherical tumors with diameters ranging from 3.3 to 11.4 mm with and without the VP‐PET device. Images were reconstructed using a list mode Maximum‐Likelihood Estimation‐Maximization algorithm implemented on multiple graphics processing units (GPUs) to support the unconventional geometries enabled by a VP‐PET system. The mean and standard deviation of the CRC were calculated for tumors of different sizes. Monte Carlo simulation was also conducted to image clusters of lesions in a torso phantom using a PET/CT scanner alone or the same scanner equipped with VP‐PET devices. Receiver operating characteristic (ROC) curves were analyzed for three system configurations to evaluate the improvement in lesion detectability by the VP‐PET device over the native PET/CT scanner. Results The repeatability in positioning the flat‐panel detectors using a robotic arm is better than 0.15 mm in all three directions. Experimental results show that the average CRC of 3.3, 4.3, and 6.0 mm diameter tumors was 0.82%, 2.90%, and 5.25%, respectively, when measured by the native scanner. The corresponding CRC was 2.73%, 6.21% and 10.13% when imaged by the VP‐PET insert device with the flat‐panel detector under the torso phantom. These values may be further improved to 4.31%, 9.65% and 18.01% by a future dual‐panel VP‐PET insert device if DOI detectors are employed to triple its detector efficiency. Monte Carlo simulation results show that the tumor detectability can be improved by a VP‐PET device that has a single flat‐panel detector. The improvement is greater if the VP‐PET device employs a dual‐panel design. Conclusions We have developed a prototype flat‐panel VP‐PET device and integrated it with a clinical PET/CT scanner. It significantly enhances the contrast of lesions, especially for those that are borderline detectable by the native scanner, within regions‐of‐interest specified by users. Simulation demonstrated the enhancement in lesion detectability with the VP‐PET device. This technology may become a cost‐effective solution for organ‐specific imaging tasks.

Jiang, Jianyong↗

Toward High-Throughput Deposition of III-V Materials and Devices Using Halide Vapor Phase Epitaxy: Preprint

III-V devices are used in countless applications due to their excellent physical properties. They could become more prevalent, especially in area-intensive applications such as solar power, if they can achieve significant cost decreases through increasing scale. The development of high-throughput growth systems can help to achieve this scale, leading to the use of III-V devices in areas where they are not currently economically feasible. Here, we describe a pilot production, pseudo inline HVPE reactor with the potential to greatly increase the throughput of III-V devices. We show computational modeling results that both informed system design and the understanding of the impact of different process parameters on the deposition. We show the throughput possibilities of this reactor with an example solar cell device design but note that this system is agnostic to the device structure and can be used to increase the throughput of lasers, LEDs, transistors, and more III-V devices.

high throughput↗

Readout optimization of multi-amplifier sensing charge-coupled devices for single-quantum measurement

The non-destructive readout capability of the Skipper Charge Coupled Device (CCD) has been demonstrated to reduce the noise limitation of conventional silicon devices to levels that allow single-photon or single-electron counting. The noise reduction is achieved by taking multiple measurements of the charge in each pixel. These multiple measurements come at the cost of extra readout time, which has been a limitation for the broader adoption of this technology in particle physics, quantum imaging, and astronomy applications. This work presents recent results of a novel sensor architecture that uses multiple non-destructive floating-gate amplifiers in series to achieve sub-electron readout noise in a thick, fully-depleted silicon detector to overcome the readout time overhead of the Skipper-CCD. This sensor is called the Multiple-Amplifier Sensing Charge-Coupled Device (MAS-CCD) can perform multiple independent charge measurements with each amplifier, and the measurements from multiple amplifiers can be combined to further reduce the readout noise. We will show results obtained for sensors with 8 and 16 amplifiers per readout stage in new readout operations modes to optimize its readout speed. The noise reduction capability of the new techniques will be demonstrated in terms of its ability to reduce the noise by combining the information from the different amplifiers, and to resolve signals in the order of a single photon per pixel. The first readout operation explored here avoids the extra readout time needed in the MAS-CCD to read a line of the sensor associated with the extra extent of the serial register. The second technique explore the capability of the MAS-CCD device to perform a region of interest readout increasing the number of multiple samples per amplifier in a targeted region of the active area of the device.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Method of resource-limited device and device class identification using system and function call tracing techniques, performance, and statistical analysis

Methods for cyber physical systems device classification are provided. A method can include receiving system and function calls and parameters and a device performance index from an unknown CPS device and a device performance index of similar class of CPS devices, calculating an autocorrelation value between different realizations of the system and function calls and parameters of the known CPS device, determining whether the autocorrelation value is greater than a threshold amount, and storing the system and function calls and parameters and the device performance characteristics of the known CPS device in the database. A method can also include calculating a correlation between system and function calls and parameters of an unknown CPS device and known CPS devices classes included in the database, as well as determining whether the maximum correlation is also greater than a threshold amount.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗

Absence of evidence for chiral Majorana modes in quantum anomalous Hall-superconductor devices

A quantum anomalous Hall (QAH) insulator coupled to an s-wave superconductor is predicted to harbor chiral Majorana modes. A recent experiment interprets the half-quantized two-terminal conductance plateau as evidence for these modes in a millimeter-size QAH-niobium hybrid device. However, non-Majorana mechanisms can also generate similar signatures, especially in disordered samples. Here, we studied similar hybrid devices with a well-controlled and transparent interface between the superconductor and the QAH insulator. When the devices are in the QAH state with well-aligned magnetization, the two-terminal conductance is always half-quantized. Our experiment provides a comprehensive understanding of the superconducting proximity effect observed in QAH-superconductor hybrid devices and shows that the half-quantized conductance plateau is unlikely to be induced by chiral Majorana fermions in samples with a highly transparent interface.

Science & Technology - Other Topics↗

Modeling Needs for Power Semiconductor Devices and Power Electronics Systems: Preprint

As energy systems move towards wide-spread electrification, penetration of power semiconductor devices and power electronics continues to grow at a rapid pace. This paper attempts to review the state of the art in power semiconductor modeling and the existing state of modeling in general when in it comes to design of devices and systems. The modeling needs for semiconductor devices vary depending on the end goal, and the level of abstraction needed towards model formulation also changes with the size and complexity of system to be designed. Finally, key aspects of thermal design and modeling for power electronics are also discussed.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Compressed Optimization of Device Architectures for Semiconductor Quantum Devices

Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum-mechanical objects with unprecedented accuracy. In semiconductor quantum-dot qubits, this manipulation requires controlling the dot orbital energies, the tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device, the positions of which are fixed once the device is fabricated. While there has been much success with small numbers of dots, as the number of dots grows, it will be increasingly useful to control these systems with as few electrode voltage changes as possible. Here, we introduce a protocol, which we call the "compressed optimization of device architectures" (CODA), in order both to efficiently identify sparse sets of voltage changes that control quantum systems and to introduce a metric that can be used to compare device designs. As an example of the former, we apply this method to simulated devices with up to 100 quantum dots and show that CODA automatically tunes devices more efficiently than other common nonlinear optimizers. To demonstrate the latter, we determine the optimal lateral scale for a triple quantum dot, yielding a simulated device that can be tuned with small voltage changes on a limited number of electrodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High voltage semiconductor devices and methods of making the devices

A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

36 MATERIALS SCIENCE↗

Blood treatment device priming devices, methods, and systems

Simple-to-use systems, methods, and devices for priming replacement blood treatment devices, for swapping the blood treatment devices out, for replacing swapped-out blood treatment devices, and other related operations are described. In embodiments, a blood treatment device can be primed while a therapy is still running. When the replacement blood treatment device is needed, the therapy can be stopped momentarily (less than a minute) for the rapid and safe swap of the blood treatment device. Blood loss can be minimized. The down time from therapy can be minimized.

Brugger, James M.↗

Renewable energy integration and system operation challenge: control and optimization of millions of devices

The electric power infrastructure, originally designed and built on large-scale power plants, is evolving into a more resilient power generation and delivery system in which millions of smaller units of distributed energy generation resources units will be installed in sub-transmission and distribution networks. In order to control, manage and optimize the future grid, a hierarchical design is presented in this chapter which enables the distributed control on grid edge while inheriting the existing centralized control structure. This layered design of large-scale power system operation and control uses the following principle: reactive power control is treated as a primary control for voltage stability, and the real power control is primarily a grid-level control but can also be a supplementary control for voltage support in the case of insufficient reactive power control capacity. For the purpose of active control and operation at the distribution level, a recursive power network model is derived from nodal injection and branch power flow models. Based on the model, the proposed algorithms of hierarchical control, grid-edge inference and dynamic hosting allowance are developed and presented for multi-level controlled operation. And, a co-simulation architecture of integrated T&D system is presented to validate and demonstrate the feasibility and scalability of proposed algorithms.

Xu, Ying↗