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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Roadmap on electronic structure codes in the exascale era

Electronic structure calculations have been instrumental in providing many important insights into a range of physical and chemical properties of various molecular and solid-state systems. Their importance to various fields, including materials science, chemical sciences, computational chemistry and device physics, is underscored by the large fraction of available public supercomputing resources devoted to these calculations. As we enter the exascale era, exciting new opportunities to increase simulation numbers, sizes, and accuracies present themselves. In order to realize these promises, the community of electronic structure software developers will however first have to tackle a number of challenges pertaining to the efficient use of new architectures that will rely heavily on massive parallelism and hardware accelerators. This roadmap provides a broad overview of the state-of-the-art in electronic structure calculations and of the various new directions being pursued by the community. It covers 14 electronic structure codes, presenting their current status, their development priorities over the next five years, and their plans towards tackling the challenges and leveraging the opportunities presented by the advent of exascale computing.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Analyzing Insider Risk Threat to the Internet of Things (IoT)

Recent technological advancement has created a growing convergence of innovation. From machine learning to ubiquitous computing to wireless networks and automation, the world is seeing new technology increasingly capable of connecting with each other. Devices and systems use open communications networks to interact, process information, and react. This is called the Internet of Things (IoT) and is comprised of physical devices that exchange data over networks, creating revolutionary possibilities. The most common way most people interact with an IoT is through ‘smart home’ products like Amazon’s Alexa, which use microphones, speakers, and phones to control a variety of devices, from lights and thermostats, to cameras, to appliances and vacuum cleaners. But the open nature of IoT networks—necessary for their ability to communicate and operate—also introduces privacy and security concerns. At a personal level, this might mean a hack into a home to steal private information, but when applied in broader industries like healthcare, transportation, manufacturing, or the military, this vulnerability can have serious consequences. As IoT usage and interconnectivity increases, so too does the susceptibility to malicious actors. And the entire system is only as secure as its least secure member. This creates particular risk and vulnerability to radiological material industries, as a competent insider adversary could utilize the IoT to potentially steal or access classified or sensitive information about employees, sites, or systems; or simply sabotage security or maintenance from a more remote—and less secure—device. The IoT relies on a secure network across the entire system, especially in transport which may lack the security of more permanent locations; if one device fails, it can create a ripple effect and an insider threat may seek to exploit that connectivity. While IoT benefits drive increased innovation and usage, there are also vulnerabilities an insider threat could exploit; this risk of an IoT to radiological material must be addressed in any mitigation effort.

Kinney, Justin↗
DOE OSTI2023

Eliminating the Imbalanced Mobility Bottlenecks via Reshaping Internal Potential Distribution in Organic Photovoltaics

The imbalanced carrier mobility remains a bottleneck for performance breakthrough in even those organic solar cells (OSCs) with recorded power conversion efficiencies (PCEs). Herein, a counter electrode doping strategy is proposed to reshape the internal potential distribution, which targets to extract the low mobility carriers at far end. Device simulations reveal that the key of this strategy is to partially dope the active layer with a certain depth, therefore it strengthens the electric field for low mobility carriers near counter electrode region while avoids zeroing the electric field near collection electrode region. Taking advantage of these, PCE enhancements are obtained from 15.4% to 16.2% and from 16.9% to 18.0%, respectively, via cathode p-doping and anode n-doping. Extending its application from opaque to semitransparent devices, the PCE of dilute cell rises from 10.5% to 12.1%, with a high light utilization efficiency (LUE) of 3.5%. The findings provide practical solutions to the core device physical problem in OSCs.

14 SOLAR ENERGY↗
DOE OSTI2026

Deploying MARTe2 and MDSplus for Scalable Real-Time Control Systems: A Proof-of-Concept for the SMART Tokamak

The SMART tokamak is a spherical tokamak with flexible shaping that will need a modular and high-performance real-time control system. This work presents the implementation and validation of the MARTe2 framework at the Princeton Plasma Physics Laboratory (PPPL) as a testbed for supporting SMART (University of Seville, Spain). The system integrates MARTe2, MDSplus for data archiving, and user datagram protocol (UDP)-based communication with both synthetic and physical devices. A deterministic control loop was developed using custom control algorithms, showing the system’s ability to operate under strict real-time constraints. The resulting framework is scalable, maintainable, and adaptable to experimental tokamaks like SMART.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Few-mode and anisotropic quantum transport in InSb nanoribbons using an all-van der Waals material-based gate

High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when two-dimensional van der Waals (vdW) materials are gated exclusively by other vdW materials, we have developed a method for gating non-vdW materials with an all-vdW gate stack, consisting of a hexagonal boron nitride dielectric layer and a few-layer graphite gate electrode. We demonstrate this gating approach on MOVPE-grown InSb nanoribbons (NRs), a novel variant of the InSb nanowire, with a flattened cross-section. In our all-vdW gated NR devices we observe conductance features that are reproducible and have low- to near-zero gate hysteresis. We also report quantized conductance, which persists to lower magnetic fields and longer channel lengths than typical InSb nanowire devices reported to date. Additionally, we observe level splitting that is highly anisotropic in an applied magnetic field, which we attribute to the ribbon cross-section. The performance of our devices is consistent with the reduced disorder expected from the all-vdW gating scheme, and marks the first report of ballistic, few-modes quantum transport in a non-vdW material with an all-vdW gate. Our results establish all-vdW gating as a promising approach for high-quality gating of non-vdW materials for quantum transport, which is in principle applicable generically, beyond InSb systems. In addition, the work showcases the specific potential of all-vdW gate/InSb NR devices for enabling clean quantum devices that may be relevant for spintronics and topological superconductivity studies.

InSb↗
DOE OSTI2024

Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 10 12 to 3.76 × 10 14 cm 2 , and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

gallium nitride↗
DOE OSTI2023

Quantum Efficiency Gain in 2D Perovskite Photo and X‐Ray Detectors

Abstract The perovskite polycrystalline thin film detector fabricated by solution method is a promising low‐cost, scalable technology for radiation imaging, but its thin volume limits the sensing efficiency for high‐energy X‐ray photons. This work reports 2D perovskite thin film photo‐diodes with a detection gain when sensing visible and X‐ray photons. Detailed power and temperature‐dependent device characterizations reveal a charge multiplication effect to be responsible for the observed high gain. This is caused by a disparity in electron and hole transport, where electron transport is retarded by a trap/de‐trap process via shallow trap states, whereas the hole transport is fast enough to produce a photoconductive gain in satisfying the charge neutrality. The 2D perovskite made with butylamine spacers is also found to exhibit a larger efficiency gain than those made with phenylethylamines because of the higher likelihood of forming shallow traps in the former. The thin film diodes feature a high temporal response over 1 MHz due to the fast charge collection across a thin volume, and the discovery provides device physics mechanisms in connection to material structure‐function relationship for future optoelectronics design that can boost the efficiency of X‐ray sensing and dim light detection.

2D perovskites↗
DOE OSTI2023

Mean Field Theory of Self‐Organizing Memristive Connectomes

Abstract Biological neuronal networks are characterized by nonlinear interactions and complex connectivity. Given the growing impetus to build neuromorphic computers, understanding physical devices that exhibit structures and functionalities similar to biological neural networks is an important step toward this goal. Self‐organizing circuits of nanodevices are at the forefront of the research in neuromorphic computing, as their behavior mimics synaptic plasticity features of biological neuronal circuits. However, an effective theory to describe their behavior is lacking. This study provides for the first time an effective mean field theory for the emergent voltage‐induced polymorphism of circuits of a nanowire connectome, showing that the behavior of these circuits can be explained by a low‐dimensional dynamical equation. The equation can be derived from the microscopic dynamics of a single memristive junction in analytical form. The effective model is tested on experiments of nanowire networks and show that it fits both the potentiation and depression of these synapse‐mimicking circuits. It is shown that this theory applies beyond the case of nanowire networks by formulating a general mean‐field theory of conductance transitions in self‐organizing memristive connectomes.

Caravelli, Francesco↗
DOE OSTI2025

Dial It Down: The Effect of Strongly Interacting Adsorbates on the BiAg 2 Rashba Surface State

Organic semiconductors interfaced with spin–orbit coupled materials offer a rich playground for fundamental studies of controlling spin dynamics in spintronic devices. The adsorbate–surface interactions at such interfaces play a key role in determining the valence electronic and spin structure and consequently, the device physics as well. Here we show that strong adsorbate–surface alloy interaction leads to weakening of the electronic coupling between the surface alloy atoms and quenches the spin–orbit coupled surface state, demonstrated for the case of the strong organic electron acceptor 2,7-dinitropyrene-4,5,9,10-tetrone (NO 2 –PyT, C 16 H 4 N 2 O 8 ) on the Rashba spin–orbit coupled surface alloy BiAg 2 /Ag(111). Furthermore, our findings demonstrate an important challenge associated with using molecular adsorbates to tailor the spin texture in BiAg 2 /Ag(111), and our work provides guidelines to consider while designing interfacial systems to engineer the spin texture in Rashba surface alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Photophysics in emerging photovoltaics

Emerging photovoltaic technologies continue to march forward with power conversion efficiencies of lead halide perovskite solar cells (PSCs) nearing 26%, perovskite-Si tandems now exceeding the single junction detailed balance limit of 33%, and organic solar cells (OSCs) showing efficiencies nearing 20%. Yet, some of the photophysics underpinning PSCs and OSCs remain unresolved. A better understanding will enable more efficient and photostable solar cells and optoelectronic devices in the future. Here, this special issue collects the latest cutting-edge research in the photophysics of PSCs and OSCs, contributed by experts on spectroscopy, theory, device physics, and materials science.

14 SOLAR ENERGY↗
DOE OSTI2025

THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure

The recent discovery of highly conducting two-dimensional hole gases (2DHGs) in GaN/AlN heterojunctions has opened the door to efficient complementary GaN electronics, a long-standing challenge in wide-bandgap semiconductor device physics. Electrical transport studies and simulations indicate that both heavy- and light-hole valence bands are occupied in these 2DHGs, but direct experimental characterization of the fundamental parameters of the mobile holes remains at an early stage. Here, we use time-domain terahertz spectroscopy and pulsed magnetic fields up to 31 T to directly measure cyclotron resonance of the mobile 2D holes in these GaN-based 2DHGs at low temperature (8 K), revealing key material properties including effective masses, densities, scattering times, and mobilities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Web Based Beamline Control System (Bluesky Web) v0.1.0

Bluesky Web is a web based interface that provides beam line controls to the end user. It allows users to issue commands to various physical devices at a beam line end station like motors and cameras. It utilizes an open source Python library (Bluesky) as the controller. It uses Bluesky to also allow for running "plans" or a sequence of device operations that can be used when running an experiment. This program is different from other controls technologies because it is intended to be open source and can be accessed from a web browser, as opposed to other paid software that is run as a stand-alone application on a computer.

De Leon, Seij↗
DOE OSTI2024

Laboratory Upgrade Point Absorber (LUPA) CAD Files

The Laboratory Upgrade Point Absorber (LUPA) is an open-source wave energy converter designed and tested by Oregon State University. The computer-aided design (CAD) files are provided here in two forms: the original SOLIDWORKS (2021) model as "LUPA SOLIDWORKS.zip" and as a STEP file "LUPA-A1000.step". The bill of materials is provided as an Excel file with assemblies (LUPA-Axxx), part numbers (LUPA-Axxx-Pyyy), part descriptions, manufacturers, and manufacturer part numbers. This comprehensive CAD model represents LUPA as it was deployed in Fall 2022 testing at the O.H. Hinsdale Wave Research Laboratory. The mass properties including mass, center of gravity, and moments of inertia have been overridden for some parts and assemblies to match the physical device properties as determined from experiments. This appears as "overridden by user" when viewing mass properties in SOLIDWORKS. The LUPA-A1000.SLDASM file from the LUPA SOLIDWORKS.zip folder is the topmost assembly, open this file to see the entire model as one assembly. See "PMEC Page", "OpenEI Wiki Page", and the "Signature Project Page" resources below for more information on LUPA.

16 TIDAL AND WAVE POWER↗
DOE OSTI2023

Virtualizing Industrial Control Networks for Cyber Resilience Experiments

Industrial control systems (ICS) networks are undergoing constant shifts to accommodate new security measures. It is challenging to test varying network configurations and security tools with physical systems as they typically include large, expensive equipment. Not only this, but researchers often do not have access to this type of equipment for development of new security tools and techniques. As a solution to these issues, this work presents a set of tools for utilizing GNS3 and Docker as a virtual ICS network. Additionally, the virtual network can be attached to physical devices including network switches, hardware simulations, and intelligent electronic devices (IEDs). Two case studies showcase a relatively complex automatically generated network and an attack on a simple ICS network with an example mitigation.

42 ENGINEERING↗
DOE OSTI2026

Degradation Mode Identification by Photocarrier Lifetime Spectroscopy on Devices and Test Structures

In this presentation, I examine the basic concepts of the device physics that can be used to distinguish various degradation and recovery modes on a cell level. The known degradation modes (bulk LeTID and LID, UVID, etc.) are due to defects and impurities that cause the photocarrier recombination according to Shockley-Reed-Hall (SRH) statistics. The SRH recombination rate strongly depends on the balance of electron and hole capture rates into the defects, which in turn, are governed by their local concentrations. The strongest recombination takes place at approximately equal concentrations of electrons and holes, while at low injection conditions (when one type of carrier dominates) the SRH recombination is suppressed. For cell degradation modes that affect the passivated interface (UVID, H-induced TOPCon contact degradation) the defects are at the interface under low-injection conditions due to either high local doping or the adjacent built-in charge in the dielectric. This mode is characterized by changes in the "diode prefactor" J01 slope in the inverse lifetime-injection level curve. In contrast, bulk degradation (LeTID, LID) affects bulk lifetime, with J01 slope unchanged. Carrier lifetime - injection level plots therefore serve as clear indicators of different degradation modes and are shown by experimental examples.

14 SOLAR ENERGY↗
DOE OSTI2024

Device and methods for determination of molecular weight distributions of polymers and distributions of other polymer properties without physical separation

Devices and methods for determining the cumulative distribution of a polymer property in a reactor without physical separation of reaction subcomponents. The device includes a means of measuring an instantaneous property of the polymers being produced in a reaction vessel a plurality of times during a polymerization reaction as well as a means of determining the corresponding change in polymer concentration in the reaction vessel between measurements of the instantaneous polymer property. The device also includes a means of computing a statistical distribution appropriate to the polymer characteristic and applying the statistical distribution to a recently measured instantaneous value of the polymer property so as to have an instantaneous distribution of the polymer property and a means of adding together the instantaneous distributions of the polymer property in order to obtain the cumulative distribution of the polymer property in the reactor.

Reed, Wayne Frederick↗
DOE OSTI2024

Position sensitive device technologies for particle physics

Here, I will give a brief overview of the use of position sensitive devices for particle physics. I will focus on silicon-based systems only. In addition to the depiction of a suite of recently designed, built, and operated detectors I will also introduce planned near term additions. I will conclude with a brief outlook regarding challenges for silicon detector applications for future colliders.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗