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Results for “diffusion-induced stress”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1987

Piezoresistance and solar cell efficiency

Diffusion-induced stresses in silicon are shown to result in large localized changes in the minority-carrier mobility which in turn can have a significant effect on cell output. Evidence is given that both compressive and tensile stresses can be generated in either the emitter or the base region. Tensile stresses in the base appear to be much more effective in altering cell performance than do compressive stresses. While most stress-related effects appear to degrade cell efficiency, this is not always the case. Evidence is presented showing that arsenic-induced stresses can result in emitter characteristics comparable to those found in the MINP cell without requiring a high degree of surface passivation.

Weizer, Victor G.↗
NASA NTRS1986

Minority-carrier mobility anomalies in low-resistivity silicon solar cells

Measurement of the minority-carrier mobility in the base region of a high-voltage metal-insulator-N-P solar cell (Green et al., 1984), as well as in other 0.1-ohm cm cells, provides direct proof that the high voltages measured for that cell are due not only to improved emitter characteristics but to an improved base region as well. The base characteristics are shown to be quite sensitive to the effects of diffusion-induced lattice stress originating in the emitter. The implications of these findings for the fabrication of high-efficiency cells are discussed.

Weizer, V. G.↗
NASA NTRS1985

Effects of chromium and aluminum on mechanical and oxidation properties of iron-nickel-base superalloys based on CG-27

The effects of chromium and aluminum on the mechanical and oxidation properties of a series of gamma-prime-strengthened alloys based on CG-27 were studied. Gamma-prime dispersion and solid-solution strengthening were the principal modes of alloy strengthening. The oxidation attack parameter K sub a decreased with increasing Cr and Al contents for each alloy group based on Al content. As a group, alloys with 3 wt % Al had the lowest attack parameters. Therefore, 3 wt % is the optimum level of Al for parabolic oxidation behavior. Spalling, due to diffusion-induced grain growth, was controlled by the overall Cr and Al levels. The alloy with 4 wt % Cr and 3 wt % Al had stress-rupture properties superior to those of the base alloy, CG-27, and maintained parabolic oxidation behavior while the Cr content was reduced by two-thirds of its value in cast CG-27.

Schuon, S. R.↗