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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

An integer- N frequency synthesizer for flexible on-chip clock generation

A low-power integer-N frequency synthesizer for flexible on-chip clock generation has been designed in a 65 nm CMOS process. The circuit can be programmed to generate two independent low-jitter clocks between 30 MHz and 3 GHz that are locked to a 10–50 MHz reference input. The design uses a phase-locked loop (PLL) with a dual-tuned LC voltage-controlled oscillator (VCO), programmable feedback divider, and dual output dividers. The total power consumption from 1.2 V and 0.8 V supplies is 4.0 mW. In conclusion, experimental results confirm the functionality of the proposed synthesizer over a wide range of output frequencies.

47 OTHER INSTRUMENTATION↗

The AMACStar ASIC for the HL-LHC ATLAS ITk Strip detector: design, verification, testing, and quality assurance

For the high-luminosity upgrade to the LHC (HL-LHC), the ATLAS detector at CERN requires an all-new inner detector, the Inner Tracker (ITk). The ITk Strip subdetector is made up of silicon modules, which include three types of radiation-hard ASICs. One of these is the Autonomous Monitor and Control (AMAC). The AMAC is manufactured by Global Foundries using 130 nm CMOS8RF DM technology and is approximately 3 by 5 mm in size. This ASIC autonomously monitors the temperatures, voltages, and currents in the module components while controlling critical values in order to prevent these quantities from reaching dangerous levels. The final design, AMACStar, was verified, tested, and ensured to perform all necessary functions. A quality control procedure using an in-house probe station set-up was developed in order to ensure that every individual chip on each wafer of AMACStars required by the ITk Strip project met performance requirements. The average per wafer yield of usable AMACStars is 92.33%, exceeding the design-specific 90% yield estimated for project costing. This estimate was based on actual yields for similar designs in this process.

Analogue electronic circuits↗

Measurement and Analysis of a Ferroelectric Field-Effect Transistor NAND Gate

Previous research investigated expanding the use of Ferroelectric Field-Effect Transistors (FFET) to other electronic devices beyond memory circuits. Ferroelectric based transistors possess unique characteris tics that give them interesting and useful properties in digital logic circuits. The NAND gate was chosen for investigation as it is one of the fundamental building blocks of digital electronic circuits. In t his paper, NAND gate circuits were constructed utilizing individual F FETs. N-channel FFETs with positive polarization were used for the standard CMOS NAND gate n-channel transistors and n-channel FFETs with n egative polarization were used for the standard CMOS NAND gate p-chan nel transistors. The voltage transfer curves were obtained for the NA ND gate. Comparisons were made between the actual device data and the previous modeled data. These results are compared to standard MOS logic circuits. The circuits analyzed are not intended to be fully opera tional circuits that would interface with existing logic circuits, bu t as a research tool to look into the possibility of using ferroelectric transistors in future logic circuits. Possible applications for th ese devices are presented, and their potential benefits and drawbacks are discussed.

Phillips, Thomas A.↗

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

Phillips, Thomas A.↗

Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board

This poster describes a first attempt to demonstrate a multi-chip prototype lander control and sensor signal digitization electronics circuit board comprised of ten NASA Glenn IC Generation 11 SiC JFET-R IC chips in 460 °C, 9.4 MPa harsh Venus surface conditions. The lander circuit ceased electrical operation prematurely at 107 °C as the Venus chamber heated up. Optical and SEM post-test inspections indicate fatal dielectric cracks occurred on only one of the ten SiC chips.

silicon carbide↗

Digital Radar-Signal Processors Implemented in FPGAs

High-performance digital electronic circuits for onboard processing of return signals in an airborne precipitation- measuring radar system have been implemented in commercially available field-programmable gate arrays (FPGAs). Previously, it was standard practice to downlink the radar-return data to a ground station for postprocessing a costly practice that prevents the nearly-real-time use of the data for automated targeting. In principle, the onboard processing could be performed by a system of about 20 personal- computer-type microprocessors; relative to such a system, the present FPGA-based processor is much smaller and consumes much less power. Alternatively, the onboard processing could be performed by an application-specific integrated circuit (ASIC), but in comparison with an ASIC implementation, the present FPGA implementation offers the advantages of (1) greater flexibility for research applications like the present one and (2) lower cost in the small production volumes typical of research applications. The generation and processing of signals in the airborne precipitation measuring radar system in question involves the following especially notable steps: The system utilizes a total of four channels two carrier frequencies and two polarizations at each frequency. The system uses pulse compression: that is, the transmitted pulse is spread out in time and the received echo of the pulse is processed with a matched filter to despread it. The return signal is band-limited and digitally demodulated to a complex baseband signal that, for each pulse, comprises a large number of samples. Each complex pair of samples (denoted a range gate in radar terminology) is associated with a numerical index that corresponds to a specific time offset from the beginning of the radar pulse, so that each such pair represents the energy reflected from a specific range. This energy and the average echo power are computed. The phase of each range bin is compared to the previous echo by complex conjugate multiplication to obtain the mean Doppler shift (and hence the mean and variance of the velocity of precipitation) of the echo at that range.

Berkun, Andrew↗

Integration of EDWARD readout architecture in full-field fluorescence imaging detector

Data bandwidth, timing resolution and resource utilization in readouts of radiation detectors are a constant challenge. Event driven solutions are pushing against well-trenched framed solutions. The idea for an asynchronous readout architecture called EDWARD ( E vent- D riven W ith A ccess and R eset D ecoder) was presented at the TWEPP 2021 conference. Here we show the progress of our work which resulted in two chip prototypes. The first one, named 3FI65P1, is a full device with the analog pixel circuitry suited for full-field fluorescence imaging. It is already manufactured, and preliminary results are presented. Finally, the second chip, named EDWARD65P1, contains digital pulse generators with Poisson-exponential distribution in each pixel for extraction of the performance matrix of the EDWARD architecture alone.

47 OTHER INSTRUMENTATION↗

Microwave microscope studies of trapped vortex dynamics in superconductors

Trapped vortices in superconductors introduce residual resistance in superconducting radio-frequency (SRF) cavities and disrupt the operation of superconducting quantum and digital electronic circuits. Understanding the detailed dynamics of trapped vortices under oscillating magnetic fields is essential for advancing these technologies. We have developed a near-field magnetic microwave microscope to study the dynamics of a limited number of trapped vortices under the probe when stimulated by a localized rf magnetic field. By measuring the local second-harmonic response (𝑃 2⁢f ) at subfemto-Watt levels, we isolate signals exclusively arising from trapped vortices, excluding contributions from surface defects and Meissner screening currents. Toy models of niobium superconductor hosting vortex pinning sites are introduced and studied with time-dependent Ginzburg-Landau (TDGL) simulations of probe/sample interaction to better understand the measured second-harmonic response. The simulation results demonstrate that the second-harmonic response of trapped vortex motion under a localized rf magnetic field shares key features with the experimental data. Here, this measurement technique provides access to vortex dynamics at the micrometer scale, such as depinning events and spatially resolved pinning properties, as demonstrated in measurements on a niobium film with an antidot flux pinning array.

43 PARTICLE ACCELERATORS↗

Miniature Housings for Electronics With Standard Interfaces

A family of general-purpose miniature housings has been designed to contain diverse sensors, actuators, and drive circuits plus associated digital electronic readout and control circuits. The circuits contained in the housings communicate with the external world via standard RS-485 interfaces.

Howard, David E.↗

Event-driven readout development: testing of the EDWARD65P1 chip with integrated event generators

Building on a prototype readout integrated circuit for segmented silicon sensors with the EDWARD event-driven readout architecture, the front-end in each pixel was replaced by a hardware generator to verify readout performance, ensuring no data loss, consistent priority handling, and speed verification. Here, this generator produces Poisson-distributed readout requests with individually tunable rates per pixel via a digitally controlled oscillator. The resulting EDWARD65P1 test ASIC is a 32×32 pixel matrix with a 100 μm pitch, equipped with digital event generators simulating radiation hits at user-defined rates. Test results for this new design are presented.

47 OTHER INSTRUMENTATION↗

AstroPix4 — a novel HV-CMOS sensor developed for space based experiments

For the proposed space based gamma-ray observatory All-sky Medium-Energy Gamma-ray Observatory eXplorer (AMEGO-X), a silicon tracker based on a novel High Voltage-CMOS (HV-CMOS) sensor called AstroPix, is currently being developed. Preliminary measurements with the first full reticle prototype AstroPix3 show that the power target of 1.5 mW/cm 2 can currently not be reached due to the digital consumption of 3.08 mW/cm 2 , while the analog power consumption of 1.04 mW/cm 2 and a break down voltage of over 350 V look promising. Based on these results, the design changes in AstroPix4, submitted in May 2023, are presented, containing changes to the time stamp generation and readout architecture. A digital power consumption below 0.25 mW/cm 2 is expected by removing the fast 200 MHz clock used to measure the time-over-threshold (ToT) and an LVDS receiver. A maximum resolution of 3.125 ns for time-of-arrival (ToA) and ToT is reached by adding per-pixel Flash-Time-to-Digital Converter (TDCs) controlled by a global delay-locked loop (DLL).

47 OTHER INSTRUMENTATION↗

Stackable Electronic Computer Modules And Interconnections

Design concept for multiprocessor computer system calls for digital electronic processing circuits of various functionalities contained within identically shaped and sized regular polygonal modules interconnected and stacked by use of rings around edges. Rings contain wide-band bus circuits configured to provide connections to adjacent modules in same layer of stack and/or to modules in different layers. Provides flexibility of configuration to implement any of large variety of designs.

Bolotin, Gary S.↗

Relative Navigation for Formation Flying of Spacecraft

This paper presents a robust and efficient approach for relative navigation and attitude estimation of spacecraft flying in formation. This approach uses measurements from a new optical sensor that provides a line of sight vector from the master spacecraft to the secondary satellite. The overall system provides a novel, reliable, and autonomous relative navigation and attitude determination system, employing relatively simple electronic circuits with modest digital signal processing requirements and is fully independent of any external systems. Experimental calibration results are presented, which are used to achieve accurate line of sight measurements. State estimation for formation flying is achieved through an optimal observer design. Also, because the rotational and translational motions are coupled through the observation vectors, three approaches are suggested to separate both signals just for stability analysis. Simulation and experimental results indicate that the combined sensor/estimator approach provides accurate relative position and attitude estimates.

Alonso, Roberto↗

Performance of MEMS Silicon Oscillator, ASFLM1, under Wide Operating Temperature Range

Over the last few years, MEMS (Micro-Electro-Mechanical Systems) resonator-based oscillators began to be offered as commercial-off-the-shelf (COTS) parts by a few companies [1-2]. These quartz-free, miniature silicon devices could compete with the traditional crystal oscillators in providing the timing (clock function) for many digital and analog electronic circuits. They provide stable output frequency, offer great tolerance to shock and vibration, and are immune to electro-static discharge [1-2]. In addition, they are encapsulated in compact lead-free packages, cover a wide frequency range (1 MHz to 125 MHz), and are specified, depending on the grade, for extended temperature operation from -40 C to +85 C. The small size of the MEMS oscillators along with their reliability and thermal stability make them candidates for use in space exploration missions. Limited data, however, exist on the performance and reliability of these devices under operation in applications where extreme temperatures or thermal cycling swings, which are typical of space missions, are encountered. This report presents the results of the work obtained on the evaluation of an ABRACON Corporation MEMS silicon oscillator chip, type ASFLM1, under extreme temperatures.

Patterson, Richard L.↗