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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Charge-screening role of c-axis atomic displacements in YBa 2 Cu 3 O 6+x and related superconductors

Here, the importance of charge reservoir layers for supplying holes to the CuO 2 planes of cuprate superconductors has long been recognized. Less attention has been paid to the screening of the charge transfer by the intervening ionic layers. We address this issue in the case of YBa 2 Cu 3 O 6+x , where CuO chains supply the holes for the planes. We present a simple dielectric-screening model that gives a linear correlation between the relative displacements of ions along the c axis, determined by neutron powder diffraction, and the hole density of the planes. Applying this model to the temperature-dependent shifts of ions along the c axis, we infer a charge transfer of 5–10% of the hole density from the planes to the chains on warming from the superconducting transition to room temperature. Given the significant coupling of c-axis displacements to the average charge density, we point out the relevance of local displacements for screening charge modulations and note recent evidence for dynamic screening of in-plane quasiparticles. This line of argument leads us to a simple model for atomic displacements and charge modulation that is consistent with images from scanning-tunneling microscopy for underdoped Bi 2 Sr 2 CaCu 2 O 8+δ .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Impact of plasma response on plasma displacements in DIII-D during application of external 3D perturbations

The effects of applied non-axisymmetric resonant magnetic perturbations (RMPs) are predicted without and with self-consistent plasma response by modeling of the magnetic field structure and two-fluid MHD simulations, respectively. A synthetic diagnostic is used to simulate soft X-ray (SXR) emission within the steep gradient region of the pedestal, 0.98 > ψ > 0.94. The entire pedestal and edge region is characterized by large changes in plasma rotation and current density. Those parameters are expected to strongly affect the plasma response to RMPs. The M3D-C1 code takes into account this response self-consistently. The plasma response is investigated in detail and used in the forward modeling of the simulated local SXR emission, within the framework of the synthetic diagnostic. The resulting synthetic emission is compared to measured SXR data. The latter clearly shows helical m = 11 ± 1 displacements around the 11/3 rational surface of sizes up to 5 cm, which change with the poloidal angle. The synthetic emission with plasma response is used to explain the nature of the measured displacements. Different approaches are tested. One approach is based on the magnetic field structure to simulate local emission, which shows additional structures at the separatrix, that are caused by the lobes. Especially without plasma response, almost only separatrix structures are generated while no significant displacements are found further inside. Another approach to model local emission uses the fluid quantities electron density and temperature, as calculated by M3D-C1. Compared to the previous approach, based on the magnetic field structure, the emission simulated by the fluid approach with plasma response shows better agreement with the measured SXR data. To be specific, it has comparable displacements in the steep gradient region and no lobe structures at all. The helical displacements around the 11/3 surface are identified to be directly related to the kink response, caused by non-resonant amplification of various poloidal RMP modes due to plasma response. Regarding the latter, the role of different plasma parameters is investigated, but it appears that the electron rotation plays a key role in the formation of screening and resonant amplification, while the kinking appears to be sensitive to the edge current density. As a result, it is also hypothesised that the strength of the kink response is also correlated to edge-localized-mode (ELM) stability.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Interactions between displacement cascade and dislocation and their influences on Peierls stress in Fe-20Cr-25Ni alloys

The interactions between dislocations and displacement cascades are investigated using molecular dynamics simulations. The primary knock-on atoms (PKAs) are placed at different distances to edge and screw dislocation lines. Specifically, an fcc Fe-20Cr-25Ni system is studied; the alloy is the based alloy for Alloy 709. The number of defects is calculated using Wigner-Seitz analysis in order to illustrate the effect of dislocations on cascades. The displacement cascades in systems containing dislocations tend to generate more total defects compared with bulk systems, but eventually lead to less surviving defects in the materials matrix due to interactions with dislocations. The changes in atomic structures of the dislocations after interacting with cascades are analyzed to understand how the primary damage affects dislocations. The displacement cascade potentially causes dislocation climb in edge dislocations and cross-slip in screw dislocations, which could serve as additional mechanisms contributing to the radiation-induced hardening (RIH) compared with conventional RIH models. To reveal this, Peierls stresses are calculated before and after cascades using molecular static simulations. This study provides critical information of how defect production and dislocations are correlated, especially when total dose is high, which needs to be taken into account in upper scale models, such as mean-field rate theory.

Lu, Zizhe↗
DOE OSTI2014

General displaced SU(1, 1) number states: Revisited

The most general displaced number states, based on the bosonic and an irreducible representation of the Lie algebra symmetry of su(1, 1) and associated with the Calogero-Sutherland model are introduced. Here, we utilize the Barut-Girardello displacement operator instead of the Klauder-Perelomov counterpart, to construct new kind of the displaced number states which can be classified in nonlinear coherent states regime, too, with special nonlinearity functions. They depend on two parameters, and can be converted into the well-known Barut-Girardello coherent and number states, respectively, depending on which of the parameters equal to zero. A discussion of the statistical properties of these states is included. Significant are their squeezing properties and anti-bunching effects which can be raised by increasing the energy quantum number. Depending on the particular choice of the parameters of the above scenario, we are able to determine the status of compliance with flexible statistics. Major parts of the issue is spent on something that these states, in fact, should be considered as new kind of photon-added coherent states, too. Which can be reproduced through an iterated action of a creation operator on new nonlinear Barut-Girardello coherent states. Where the latter carry, also, outstanding statistical features.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Freeze-In dark matter with displaced signatures at colliders

Dark matter, X, may be generated by new physics at the TeV scale during an early matter-dominated (MD) era that ends at temperature T{sub R}≪ TeV. Compared to the conventional radiation-dominated (RD) results, yields from both Freeze-Out and Freeze-In processes are greatly suppressed by dilution from entropy production, making Freeze-Out less plausible while allowing successful Freeze-In with a much larger coupling strength. Freeze-In is typically dominated by the decay of a particle B of the thermal bath, B→X. For a large fraction of the relevant cosmological parameter space, the decay rate required to produce the observed dark matter abundance leads to displaced signals at LHC and future colliders, for any m{sub X} in the range keV <m{sub X}<m{sub B} and for values of m{sub B} accessible to these colliders. This result applies whether the early MD era arises after conventional inflation, when T{sub R} is the usual reheat temperature, or is a generic MD era with an alternative origin. In the former case, if m{sub X} is sufficiently large to be measured from kinematics, the reheat temperature T{sub R} can be extracted. Our result is independent of the particular particle physics implementation of B→X, and can occur via any operator of dimension less than 8 (4) for a post-inflation (general MD) cosmology. An interesting example is provided by DFS axion theories with TeV-scale supersymmetry and axino dark matter of mass GeV to TeV, which is typically overproduced in a conventional RD cosmology. If B is the higgsino, h-tilde, Higgs, W and Z particles appear at the displaced decays, h-tilde→ha-tilde, Za-tilde and h-tilde{sup ±}→W{sup ±}a-tilde. The scale of axion physics, f, is predicted to be in the range (3×10{sup 8}−10{sup 12}) GeV and, over much of this range, can be extracted from the decay length.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2019

Retention properties in displacement damaged ultra-fine grain tungsten exposed to divertor plasma

One of the main advantages of using tungsten (W) as a plasma facing material (PFM) is its low uptake and retention of tritium. However, in high purity (ITER grade) W, hydrogenic retention increases significantly with neutron-induced displacement damage in the W lattice. This experiment examines an alternative W grade PFM, ultra-fine grain (UFG) W, to compare its retention properties with ITER grade W after 12 MeV Si ion displacement damage up to 0.6 dpa (displacements per atom.) Following exposure to plasma in the DIII-D divertor, D retention was then assessed with Nuclear Reaction Analysis (NRA) depth profiling up to 3.5 µm and thermal desorption spectrometry (TDS). Undamaged specimens were also included in our test matrix for comparison. For all samples, D release peaks were observed during TDS at approximately 200 °C and 750 °C. For the ITER-grade W specimens, the intensity of the 750 °C release peak was more pronounced for specimens that had been pre-damaged. Conversely, UFG samples that had been damaged by 12 MeV Si showed enhancement of the lower temperature release peak (200 °C). NRA profiles also reveal a higher D concentration for UFG W samples up to the peak in the damage profile at a depth of 2 m. Overall, we observed that the total trapped inventory in UFG W was 20% higher than ITER grade W in the undamaged case and 10% higher in the damaged case. A comparison of NRA and TDS data indicates that a larger fraction of the total retained D is trapped near the surface (86–100%) in UFG W pre-damaged to 0.6 dpa compared with ITER grade W (39–61%). Further examination of the UFG material with microscopy is recommended for a definitive determination of the types of defects responsible for D trapping. Our results highlight some potential trade-offs associated UFG W regarding its performance from a tritium retention standpoint. That said, our TDS results indicate that this enhanced inventory can be released by baking at relatively low temperatures (<500 °C), providing an avenue for minimizing tritium retention in this material that would be practical for implementation in a tokamak.

Barton, J↗