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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
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NASA NTRS1985

Heavy doping effects in high efficiency silicon solar cells

The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.

Lindholm, F. A.↗
NASA NTRS1984

Heavy doping effects in high efficiency silicon solar cells

Several of the key parameters describing the heavily doped regions of silicon solar cells are examined. The experimentally determined energy gap narrowing and minority carrier diffusivity and mobility are key factors in the investigation.

Lindholm, F. A.↗
NASA NTRS1986

Heavy doping effects in high efficiency silicon solar cells

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

Lindholm, F. A.↗
NASA NTRS1984

Heavy doping effects in high efficiency silicon solar cells

A model for bandgap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones, give an agreement between the model and experiments on n- and p-type silicon which is good as far as transport measurements in the 300 K range. The discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent, optical determinations of band gap shrinkage at 5 K.

Lindholm, F. A.↗
NASA NTRS1975

Effects of high doping levels on silicon solar cell performance

Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗
NASA NTRS1975

Effects of high doping levels silicon solar cell performance

The significance of the heavy doping effects (HDE) on the open-circuit voltage of silicon solar cells is assessed. Voltage calculations based on diffusion theory are modified to include the first order features of the HDE. Comparisions of the open-circuit voltage measured for cells of various base resistivities are made with those calculated using the diffusion model with and without the HDE. Results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AM0) and a voltage of 0.7 volts are calculated for 0.1 omega-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗
NASA NTRS1991

Effect of doping in the Bi-Sr-Ca-Cu-O superconductor

The results of the effect of doping on the superconducting transition in the Bi-Sr-Ca-Cu-O system are reported. Samples were prepared under identical conditions with varying types (Pb, Sb, Sn, Nb) and amounts of dopants. All samples consisted of multiple phases, and showed stable and reproducible superconducting transitions. Stabilization of the well known 110 K phase depends on both the type and amount of dopant. No trace of superconducting phase of 150 K and above was observed.

Akbar, S. A.↗
NASA NTRS1995

Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

Schacham, S. E.↗
NASA NTRS1986

Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor

Excellent dc and millimeter-wave performance is reported in In0.15Ga0.85As/Al0.15Ga0.85As pseudomorphic modulation-doped field effect transistors (MODFET's) with 0.25-micron-length gates. Extrinsic transconductances as high as 495 mS/mm at 300 K and unprecedented power performance in the 60-GHz range were observed. Although not yet optimized, excellent low noise characteristics, 0.9 dB, with an associated gain of 10.4 dB at 18 GHz, and a noise figure of 2.4 dB with an associated gain of 4.4 dB at 62 GHz were obtained. This is the best noise performance ever reported for a MODFET in this frequency range. These results clearly demonstrate the superiority of pseudomorphic MODFET structures in high-frequency applications.

Henderson, T.↗
NASA NTRS1992

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical point of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, Samuel A.↗
NASA NTRS1991

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, S. A.↗
NASA NTRS2006

Effects of Doping on Thermal Conductivity of Pyrochlore Oxides for Advanced Thermal Barrier Coatings

Pyrochlore oxides of general composition, A2B2O7, where A is a 3(+) cation (La to Lu) and B is a 4(+) cation (Zr, Hf, Ti, etc.) have high melting point, relatively high coefficient of thermal expansion, and low thermal conductivity which make them suitable for applications as high-temperature thermal barrier coatings. The effect of doping at the A site on the thermal conductivity of a pyrochlore oxide La2Zr2O7, has been investigated. Oxide powders of various compositions La2Zr2O7, La(1.7)Gd(0.3)Zr2O7, La(1.7)Yb(0.3)Zr2O7 and La(1.7)Gd(0.15)Yb(0.15)Zr2O7 were synthesized by the citric acid sol-gel method. These powders were hot pressed into discs and used for thermal conductivity measurements using a steady-state laser heat flux test technique. The rare earth oxide doped pyrochlores La(1.7)Gd(0.3)Zr2O7, La(1.7)Yb(0.3)Zr2O7 and La(1.7)Gd(0.15)Yb(0.15)Zr2O7 had lower thermal conductivity than the un-doped La2Zr2O7. The Gd2O3 and Yb2O3 co-doped composition showed the lowest thermal conductivity.

Bansal, Narottam P.↗
NASA NTRS1976

A theoretical analysis of the current-voltage characteristics of solar cells

Various mechanisms which limit the conversion efficiency of silicon solar cells were studied. The effects of changes in solar cell geometry such as layer thickness on performance were examined. The effects of various antireflecting layers were also examined. It was found that any single film antireflecting layer results in a significant surface loss of photons. The use of surface texturing techniques or low loss antireflecting layers can enhance by several percentage points the conversion efficiency of silicon cells. The basic differences between n(+)-p-p(+) and p(+)-n-n(+) cells are treated. A significant part of the study was devoted to the importance of surface region lifetime and heavy doping effects on efficiency. Heavy doping bandgap reduction effects are enhanced by low surface layer lifetimes, and conversely, the reduction in solar cell efficiency due to low surface layer lifetime is further enhanced by heavy doping effects. A series of computer studies is reported which seeks to determine the best cell structure and doping levels for maximum efficiency.

Dunbar, P. M.↗
NASA NTRS1985

High-efficiency silicon solar-cell design and practical barriers

A numerical evaluation technique is used to study the impact of practical barriers, such as heavy doping effects (Auger recombination, band gap narrowing), surface recombination, shadowing losses and minority-carrier lifetime (Tau), on a high efficiency silicon solar cell performance. Considering a high Tau of 1 ms, efficiency of a silicon solar cell of the hypothetical case is estimated to be around 29%. This is comparable with (detailed balance limit) maximum efficiency of a p-n junction solar cell of 30%. Value of Tau is varied from 1 second to 20 micro. Heavy doping effects, and realizable values of surface recombination velocities and shadowing, are then considered in succession and their influence on cell efficiency is evaluated and quantified. These practical barriers cause the cell efficiency to reduce from the maximum value of 29% to the experimentally achieved value of about 19%. Improvement in open circuit voltage V sub oc is required to achieve cell efficiency greater than 20%. Increased value of Tau reduces reverse saturation current and, hence, improves V sub oc. Control of surface recombination losses becomes critical at higher V sub oc. Substantial improvement in Tau and considerable reduction in surface recombination velocities is essential to achieve cell efficiencies greater than 20%.

Mokashi, A.↗
NASA NTRS1993

Ellipsometric characterization of In(0.52)Al(0.48)As and of modulation doped field effect transistor structures on InP substrates

The dielectric function of a thick layer of In(0.52)Al(0.48)As lattice matched to InP was measured by variable angle spectroscopic ellipsometry in the range 1.9-4.1 eV. The In(0.52)Al(0.48)As was protected from oxidation using a thin In(0.53)Ga(0.47)As cap that was mathematically removed for the dielectric function estimate. The In(0.52)Al(0.48)As dielectric function was then verified by ellipsometric measurements of other In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As structures, including (MODFET), and is shown to provide accurate structure layer thicknesses.

Alterovitz, S. A.↗
NASA NTRS1985

High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

Pseudomorphic In0.15Ga0.85As/A10.15Ga0.85As modulation-doped field effect transistors (MODFET's) exhibiting extremely good dc characteristics have been successfully fabricated. dc transconductance in these strained-layer structures of 270 mS/mm was measured for 1-micron gate, normally-on devices at 300 K. Maximum drain current levels are 290 mA/mm, with excellent pinch-off and saturation characteristics. The transconductance increased to 360 mS/mm at 77 K while no persistent photoconductivity or drain collapse was observed. Preliminary microwave results indicate a 300-K current gain cutoff frequency of about 20 GHz. These results are equivalent to the best GaAs/AlGaAs MODFET results and are due in part to the improved transport properties and carrier confinement in the InGaAs quantum well.

Ketterson, A.↗