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Results for “drift-diffusion approximation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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14 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Implicit and coupled fluid plasma solver with adaptive Cartesian mesh and its applications to non-equilibrium gas discharges

In this work, we present a new fluid plasma solver with adaptive Cartesian mesh (ACM) based on a full-Newton (nonlinear, implicit) scheme for non-equilibrium gas discharge plasma. The electrons and ions are described using drift-diffusion approximation coupled to Poisson equation for the electric field. The electron-energy transport equation is solved to account for electron thermal conductivity, Joule heating, and energy loss of electrons in collisions with neutral species. The rate of electron-induced ionization is a function of electron temperature and could also depend on electron density (important for plasma stratification). The ion and gas temperature are kept constant. The transport equations are discretized using a non-isothermal Scharfetter-Gummel scheme to resolve possible large temperature gradients in the sheaths. We demonstrate the new solver for simulations of direct current (DC) and radiofrequency (RF) discharges. The implicit treatment of the coupled equations allows using large time steps. The full-Newton method (FNM) enables fast nonlinear convergence at each time step, offering significantly improved simulation efficiency. We discuss the selection of time steps for solving different plasma problems. The new solver enables solving several problems we could not solve before with existing software: two- and three-dimensional structures of the entire DC discharges including cathode and anode regions, electric field reversals and double-layer formation, the normal cathode spot and an anode ring, moving striations in diffuse and constricted DC discharges, and standing striations in RF discharges. The developed FNM-ACM technique offers many benefits for tackling the disparity of gas discharge plasma systems' time scales and nonlinearity.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Crystallization and Thermoelectric Transport in Semiconductor Micro- and Nanostructures Under Extreme Conditions

This project focused on thermoelectric transport in semiconductor micro and nanostructures where moderate and typical operating voltages and currents lead to extreme thermal gradients and current densities. Models that describe behavior of semiconducting materials typically assume an equilibrium condition or slight deviations from it. In these cases the generation-recombination processes are assumed to have reached a local equilibrium for a given temperature. Hence, free carrier concentrations and their mobilities, band-gap, thermal conductivity, thermoelectric properties, mobility of atoms and mechanical properties of the material, can be described as a function of temperature. In the case of PN junctions under electrical bias, carrier concentrations can change up to ~ 1020 cm-3 and a drift-diffusion approximation is typically used to obtain the carrier concentrations while assuming that the material properties do not change. In non-equilibrium conditions, the assumption that the material properties remain the same may not be valid. While the increased conduction-band electron concentration may not have a drastic effect on the material, large hole concentration is expected to soften the material as ‘a hole’ comes into existence as a broken bond in the lattice. As the hole density approaches 1022 cm-3, the number of bonds holding the lattice together is significantly reduced, making it easier to break additional bonds, reduce band-gap and inhibit phonon transport. As these holes move away from where they were generated, local properties are expected to deviate significantly from the equilibrium case. Hence, temperature alone is not sufficient to describe the behavior of the material. The behavior of the solid material close to a molten region (liquid-solid interfaces) is also expected to deviate from the equilibrium case as a function of hole injection rate, which can be drastically increased or decreased in the presence of an electric field. In the past years we have investigated the possible thermoelectric explanation of asymmetric melting of self-heated Si micro-structures using equilibrium materials’ properties that exist in the literature. We have analyzed the contribution of the electrons and the holes and identified the generation-transport-recombination of minority carriers (GTR) as the reason for an extreme change in the thermal profile in presence of strong generation and electric field. A more complete analysis required construction of models that capture the individual generation and recombination processes to understand the thermal profile as well as the possibility of electronic softening and non-equilibrium melting of the structure below melting temperature. The possibility of melting a material at a lower temperature breaks the correlation between the atomic mobility and the kinetic energy in the system for a given temperature and may allow alternative growth processes. This may also be the mechanism behind ‘amorphization-without-melting in layered structures heated with laser pulses’ that has been reported earlier. The conventional models for semiconductors are constructed for low temperature operation and their projections to higher temperatures do not yield reasonable carrier concentrations. Using these models, the free hole concentrations are calculated to be on the order of 1019 cm-3 at melting, which also do not correlate well with the latent heat of fusion. The melt is expected to correspond to broken bond concentrations on the order of the atomic density (~5x1022 cm-3 for Silicon). Hence, using conventional models the thermoelectric contribution expected from the GTR process is estimated to be much smaller than it likely is. Our work focused on improving the computational models and electrical characterization of materials and devices to better understand thermoelectric trabsport under extremen thermal gradients and current densities. Specifically, during this project, we have - Expanded our computational models to include self-consistent solution of Poisson charge equation (together with current and heat equations currently solved) for improved accuracy of role of bipolar conduction, - Developed a crystallization model incorporating experimentally determined nucleation rates and growth velocities to enable simulation of grain growth, growth-from-melt, filament formation and retention, - Performed high-temperature characterization of relevant materials (including metal contacts, interfacial and insulation layers); electrical and thermal conductivities, Seebeck coefficient, carrier mobility and concentration, - Performed High-speed device-level characterization of metastable amorphous and crystalline phases, crystallization and amorphization dynamics, melting and crystalline growth-from-melt, - Observed and characterized formation of microplasmas in electrically stressed ZnO nanoforests.

36 MATERIALS SCIENCE↗
DOE OSTI2024

An Asymptotic Preserving Discontinuous Galerkin Method for a Linear Boltzmann Semiconductor Model

A key property of the linear Boltzmann semiconductor model is that as the collision frequency tends to infinity, the phase space density $f$ = $f$ ($x, v, t$) converges to an isotropic function $M (v)$$ρ$$(x, t)$, called the drift-diffusion limit, where $M$ is a Maxwellian and the physical density $ρ$ satisfies a second-order parabolic PDE known as the drift-diffusion equation. Numerical approximations that mirror this property are said to be asymptotic preserving. In this paper we build a discontinuous Galerkin method to the semiconductor model, and we show this scheme is both uniformly stable in $ε$, where 1/$ε$ is the scale of the collision frequency, and asymptotic preserving. Here in particular, we discuss what properties the discrete Maxwellian must satisfy in order for the schemes to converge in $ε$ to an accurate $h$-approximation of the drift-diffusion limit. Discrete versions of the drift-diffusion equation and error estimates in several norms with respect to $ε$ and the spacial resolution are also included.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

High-Fidelity Simulations of Plasma-Assisted Oxidation of Hydrocarbon Fuels Using Nanosecond Pulsed Discharges

Next, a robust and efficient framework for simulating NSPD in multiple dimensions is developed. The reactive Navier-Stokes equations are extended to include a drift-diffusion plasma-fluid model with a local field approximation (LFA) in a finite-volume solver, which uses an adaptive mesh refinement (AMR) strategy to address the wide separation of length scales in the problem. A two-way coupling strategy is used whereby the plasma-fluid model and reactive Navier-Stokes equations are integrated simultaneously. The oxidation of ethylene/air mixtures mediated by NSPD is simulated in a pin-to-pin configuration. All phases of the plasma discharge are simulated explicitly (including streamer ignition, propagation, and connection, as well as the subsequent spark phase), along with the evolution of the plasma during the inter-pulse period. Temporally and spatially-resolved results are presented, with an emphasis on the analysis of heating and energy deposition, as well as of the evolution of the concentration of active particles generated during the NSPD and their influence on ignition.

adaptive mesh refinement↗
DOE OSTI2024

Understanding and Controlling the Formation of Nonradiative Defects in Blue Organic Triplet Emitters

Phosphorescent organic light-emitting devices (PHOLEDs) suffer from destructive molecular processes due to triplet-polaron and triplet-triplet annihilation. These processes are energetically driven and hence are particularly active in decreasing the lifetime of blue PHOLEDs. It has recently been shown that increasing triplet radiative rates via the Purcell effect effectively extends the device operational lifetime by reducing the triplet radiative lifetime, thus decreasing their density and the probability of triplet-annihilation reactions. We provide an analytical framework using Marcus theory to explain the observed, approximately exponential relationship between exciton energy and device lifetime. From transient drift-diffusion dynamics, we show that the Purcell effect reduces the exciton density in the steady state and increases the photoluminescent yield, thereby reducing defect generation rates and extending the device lifetime. We control the radiative rate of excitons in microcavities, thereby connecting the exciton energy and decay rates with the observed device lifetime. The device lifetime is shown to follow a power-law dependence on the Purcell factor ( PF m ) with m = 1.5 to 2.5, dependent on the TTA-to-TPA ratio and photoluminescence quantum yield. From our analysis, a fivefold increase in PF has the potential to extend the blue PHOLED lifetime by up to 2 orders of magnitude, making the blue PHOLED lifetime comparable to that of state-of-the-art green PHOLEDs. Published by the American Physical Society 2024

Zhao, Haonan (ORCID:0000000190584422)↗
NASA NTRS1996

Comparison of Non-Parabolic Hydrodynamic Simulations for Semiconductor Devices

Parabolic drift-diffusion simulators are common engineering level design tools for semiconductor devices. Hydrodynamic simulators, based on the parabolic band approximation, are becoming more prevalent as device dimensions shrink and energy transport effects begin to dominate device characteristic. However, band structure effects present in state-of-the-art devices necessitate relaxing the parabolic band approximation. This paper presents simulations of ballistic diodes, a benchmark device, of Si and GaAs using two different non-parabolic hydrodynamic formulations. The first formulation uses the Kane dispersion relationship in the derivation of the conservation equations. The second model uses a power law dispersion relation {(hk)(exp 2)/2m = xW(exp Y)}. Current-voltage relations show that for the ballistic diodes considered. the non-parabolic formulations predict less current than the parabolic case. Explanations of this will be provided by examination of velocity and energy profiles. At low bias, the simulations based on the Kane formulation predict greater current flow than the power law formulation. As the bias is increased this trend changes and the power law predicts greater current than the Kane formulation. It will be shown that the non-parabolicity and energy range of the hydrodynamic model based on the Kane dispersion relation are limited due to the binomial approximation which was utilized in the derivation.

Smith, A. W.↗
NASA NTRS2000

Hierarchical Statistical 3D ' Atomistic' Simulation of Decanano MOSFETs: Drift-Diffusion, Hydrodynamic and Quantum Mechanical Approaches

When MOSFETs are scaled to deep submicron dimensions the discreteness and randomness of the dopant charges in the channel region introduces significant fluctuations in the device characteristics. This effect, predicted 20 year ago, has been confirmed experimentally and in simulation studies. The impact of the fluctuations on the functionality, yield, and reliability of the corresponding systems shifts the paradigm of the numerical device simulation. It becomes insufficient to simulate only one device representing one macroscopical design in a continuous charge approximation. An ensemble of macroscopically identical but microscopically different devices has to be characterized by simulation of statistically significant samples. The aims of the numerical simulations shift from predicting the characteristics of a single device with continuous doping towards estimating the mean values and the standard deviations of basic design parameters such as threshold voltage, subthreshold slope, transconductance, drive current, etc. for the whole ensemble of 'atomistically' different devices in the system. It has to be pointed out that even the mean values obtained from 'atomistic' simulations are not identical to the values obtained from continuous doping simulations. In this paper we present a hierarchical approach to the 'atomistic' simulation of aggressively scaled decanano MOSFETs. A full scale 3D drift-diffusion'atomostic' simulation approach is first described and used for verification of the more economical, but also more restricted, options. To reduce the processor time and memory requirements at high drain voltage we have developed a self-consistent option based on a thin slab solution of the current continuity equation only in the channel region. This is coupled to the Poisson's equation solution in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison with the full self-consistent solution. At low drain voltage only single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. A pilot version of a hydrodynamic 'atomistic' simulator has been developed in order to study the effect of the nonequilibrium, non local transport in decanano MOSFETs on the random dopant induced current fluctuations. For the first time we have also applied the density gradient approach in 3D to investigate the effect of the quantum confinement on the threshold voltage fluctuations. The developed 'atomistic' simulation techniques have been applied to study various fluctuation resistant MOSFET architectures including epitaxial and delta doped devices.

Asenov, Asen↗
NASA NTRS2001

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Svizhenko, Alexei↗
DOE OSTI2024

Massively parallel axisymmetric fluid model for streamer discharges

A highly parallelizable fluid plasma simulation tool based upon the first-order drift-diffusion equations is discussed. Atmospheric pressure plasmas have densities and gradients that require small element sizes in order to accurately simulate the plasm resulting in computational meshes on the order of millions to tens of millions of elements for realistic size plasma reactors. To enable simulations of this nature, parallel computing is required and must be optimized for the particular problem. Here, a finite-volume, electrostatic drift-diffusion implementation for low-temperature plasma is discussed. The implementation is built upon the Message Passing Interface (MPI) library in C++ using Object Oriented Programming. The underlying numerical method is outlined in detail and benchmarked against simple streamer formation from other streamer codes. Electron densities, electric field, and propagation speeds are compared with the reference case and show good agreement. Convergence studies are also performed showing a minimal space step of approximately 4 μm required to reduce relative error to below 1% during early streamer simulation times and even finer space steps are required for longer times. Additionally, strong and weak scaling of the implementation are studied and demonstrate the excellent performance behavior of the implementation up to 100 million elements on 1024 processors. Lastly, different advection schemes are compared for the simple streamer problem to analyze the influence of numerical diffusion on the resulting quantities of interest.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

In this paper we introduce a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition, they lead to percolative transport through paths of minimal energy in the two-dimensional (2D) landscape of disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schrödinger equation resolution. The theory also provides a good approximation to the density of states for the disordered system over the full range of energies required to account for transport at room temperature. The current-voltage characteristics modeled by three-dimensional simulation of a full nitride-based light emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high-quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Localization landscape theory of disorder in semiconductors. I. Theory and modeling

Here, we present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum localization which introduces for each type of carrier a spatial function called localization landscape. These landscapes allow us to predict the localization regions of electron and hole quantum states, their corresponding energies, and the local densities of states. We show how the various outputs of these landscapes can be directly implemented into a drift-diffusion model of carrier transport and into the calculation of absorption/emission transitions. This creates a new computational model which accounts for disorder localization effects while also capturing two major effects of quantum mechanics, namely, the reduction of barrier height (tunneling effect) and the raising of energy ground states (quantum confinement effect), without having to solve the Schrödinger equation. Finally, this model is applied to several one-dimensional structures such as single quantum wells, ordered and disordered superlattices, or multiquantum wells, where comparisons with exact Schrödinger calculations demonstrate the excellent accuracy of the approximation provided by the landscape theory.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Quantum Transmission Conditions for Diffusive Transport in Graphene with Steep Potentials

We present a formal derivation of a drift-diffusion model for stationary electron transport in graphene, in presence of sharp potential profiles, such as barriers and steps. Assuming the electric potential to have steep variations within a strip of vanishing width on a macroscopic scale, such strip is viewed as a quantum interface that couples the classical regions at its left and right sides. In the two classical regions, where the potential is assumed to be smooth, electron and hole transport is described in terms of semiclassical kinetic equations. The diffusive limit of the kinetic model is derived by means of a Hilbert expansion and a boundary layer analysis, and consists of drift-diffusion equations in the classical regions, coupled by quantum diffusive transmission conditions through the interface. The boundary layer analysis leads to the discussion of a four-fold Milne (half-space, half-range) transport problem.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1999

Hierarchical Approach to 'Atomistic' 3-D MOSFET Simulation

We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1 micron MOSFET's. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional drift-diffusion atomistic simulation approach is first described and used to verify more economical, but restricted, options. To reduce processor time and memory requirements at high drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel. This is coupled to the solution of the Poisson equation in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison to the full self-consistent solution. At low drain voltage, a single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. In this case, the current is calculated by solving the current continuity equation in a drift approximation only, also in a thin slab containing the MOSFET channel. The regions of applicability for the different components of this hierarchical approach are illustrated in example simulations covering the random dopant-induced threshold voltage fluctuations, threshold voltage lowering, threshold voltage asymmetry, and drain current fluctuations.

Asenov, Asen↗