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Effective-Mass Theory For Inhomogeneous Semiconductors

Five papers present derivations in effective-mass theory for semiconducing materials of gradually varying spatial composition. In paper entitled "Position-Dependent Effective Masses in Semiconductor Theory," concept of spatially-varying effective masses reviewed and shown unworkable. Second paper considers compound semiconductor having gradual spatial variation of composition. Third paper shows effective masses depend on average of chemical composition over entire crystal. Pair of papers entitled "Forces Acting on Free Carriers in Semiconductors of Inhomogeneous Composition" show it is incorrect to apply extended Wannier-Slater theorem using spatially changing effective masses, and quasi-electric fields due to spatial variations in chemical composition do not depend explicitly on temperature.

Von Roos, Oldwig↗

Quantification of Exciton Fine Structure Splitting in a Two-Dimensional Perovskite Compound

Applications of two-dimensional (2D) perovskites have significantly outpaced the understanding of many fundamental aspects of their photophysics. The optical response of 2D lead halide perovskites is dominated by strongly bound excitonic states. However, a comprehensive experimental verification of the exciton fine structure splitting and associated transition symmetries remains elusive. Here we employ low temperature magneto-optical spectroscopy to reveal the exciton fine structure of (PEA) 2 PbI 4 (here PEA is phenylethylammonium) single crystals. We observe two orthogonally polarized bright in-plane free exciton (FX) states, both accompanied by a manifold of phonon-dressed states that preserve the polarization of the corresponding FX state. Introducing a magnetic field perpendicular to the 2D plane, we resolve the lowest energy dark exciton state, which although theoretically predicted, has systematically escaped experimental observation (in Faraday configuration) until now. These results corroborate standard multiband, effective-mass theories for the exciton fine structure in 2D perovskites and provide valuable quantification of the fine structure splitting in (PEA) 2 PbI 4 .

36 MATERIALS SCIENCE↗

Microscopic model for the stacking-fault potential and the exciton wave function in GaAs

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging cou- pled with density functional and effective-mass theory to build a microscopic model of the stacking- fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Imaging the Acceptor Wave Function Anisotropy in Silicon

We present the first scanning tunneling microscopy (STM) image of hydrogenic acceptor wave functions in silicon. These acceptor states appear as square-ring-like features in STM images and originate from near-surface defects introduced by high-energy bismuth implantation into a silicon (001) wafer. Scanning tunneling spectroscopy confirms the formation of a p-type surface. Effective-mass and tight-binding calculations provide an excellent description of the observed square-ring-like features, confirming their acceptor character and attributing their symmetry to the light- and heavy-hole band degeneracy in silicon. A detailed understanding of the energetic and spatial properties of acceptor wave functions in silicon is essential for engineering large-scale acceptor-based quantum devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

An investigation of impurity centers in semiconductors of variable composition. Part 1: General theory and some applications

A theory of deep point defects imbedded in otherwise perfect semiconductor crystals is developed with the aid of pseudopotentials. The dominant short-range forces engendered by the impurity are sufficiently weakened in all cases where the cancellation theorem of the pseudopotential formalism is operative. Thus, effective-mass-like equations exhibiting local effective potentials derived from nonlocal pseudopotentials are shown to be valid for a large class of defects. A two-band secular determinant for the energy eigenvalues of deep defects is also derived from the set of integral equations which corresponds to the set of differential equations of the effective-mass type. Subsequently, the theory in its simplest form, is applied to the system Al(x)Ga(1-x)As:Se. It is shown that the one-electron donor level of Se within the forbidden gap of Al(x)Ga(1-x)As as a function of the AlAs mole fraction x reaches its maximum of about 300 meV (as measured from the conduction band edge) at the cross-over from the direct to the indirect band-gap at x = 0.44 in agreement with experiments.

Vonroos, O. H.↗

Position-dependent effective masses in semiconductor theory. II

A compound semiconductor possessing a slowly varying position-dependent chemical composition is considered. An effective-mass equation governing the dynamics of electron (or hole) motion using the Kohn-Luttinger representation and canonical transformations is derived. It is shown that, as long as the variation in chemical composition may be treated as a perturbation, the effective masses become constant, position-independent quantities. The effective-mass equation derived here is identical to the effective-mass equation derived previously by von Roos (1983), using a Wannier representation.

Von Roos, O.↗

Constraints on the nuclear symmetry energy from asymmetric-matter calculations with chiral 𝑁⁢𝑁 and 3⁢𝑁 interactions

The nuclear symmetry energy is a key quantity in nuclear (astro)physics. It describes the isospin dependence of the nuclear equation of state, which is commonly assumed to be almost quadratic. Here, in this work, we confront this standard quadratic expansion of the equation of state with explicit asymmetric nuclear-matter calculations based on a set of commonly used Hamiltonians including two- and three-nucleon forces derived from chiral effective-field theory. We study, in particular, the importance of nonquadratic contributions to the symmetry energy, including the nonanalytic logarithmic term introduced by Kaiser [Phys. Rev. C 91, 065201 (2015)]. Our results suggest that the nonquadratic contribution to the symmetry energy can be systematically determined from the various Hamiltonians employed, and we obtain 0.74$^{+0.11}_{−0.08}$ MeV (or −1.02$^{+0.11}_{−0.08}$ MeV for the potential term with the effective-mass contribution) at nuclear saturation density, while the logarithmic contribution to the symmetry energy is relatively small and model-dependent. We also employ the meta-model approach to study the impact of the higher-order contributions on the neutron-star crust-core transition density, and find a 5% correction.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗