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Results for “electric-field-controlled strain”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Electric-field-controlled interface strain coupling and non-volatile resistance switching of La{sub 1-x}Ba{sub x}MnO₃ thin films epitaxially grown on relaxor-based ferroelectric single crystals

We have fabricated magnetoelectric heterostructures by growing ferromagnetic La{sub 1-x}Ba{sub x}MnO₃ (x=0.2, 0.4) thin films on (001)-, (110)-, and (111)-oriented 0.31Pb(In{sub 1/2}Nb{sub 1/2})O₃-0.35Pb(Mg{sub 1/3}Nb{sub 1/2})O₃-0.34PbTiO₃ (PINT) ferroelectric single-crystal substrates. Upon poling along the [001], [110], or [111] crystal direction, the electric-field-induced non-180° domain switching gives rise to a decrease in the resistance and an enhancement of the metal-to-insulator transition temperature T C of the films. By taking advantage of the 180° ferroelectric domain switching, we identify that such changes in the resistance and T C are caused by domain switching-induced strain but not domain switching-induced accumulation or depletion of charge carriers at the interface. Further, we found that the domain switching-induced strain effects can be efficiently controlled by a magnetic field, mediated by the electronic phase separation. Moreover, we determined the evolution of the strength of the electronic phase separation against temperature and magnetic field by recording the strain-tunability of the resistance [(ΔR/R){sub strain}] under magnetic fields. Additionally, opposing effects of domain switching-induced strain on ferromagnetism above and below 197 K for the La₀.₈Ba₀.₂MnO₃ film and 150 K for the La₀.₆Ba₀.₄MnO₃ film, respectively, were observed and explained by the magnetoelastic effect through adjusting the magnetic anisotropy. Finally, using the reversible ferroelastic domain switching of the PINT, we realized non-volatile resistance switching of the films at room temperature, implying potential applications of the magnetoelectric heterostructure in non-volatile memory devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Giant anisotropic magnetoresistance in oxygen-vacancy-ordered epitaxial La 0.5 Sr 0.5 CoO 3–δ films

Recent advances in complex oxide heterostructures have realized extraordinary control over oxygen vacancies ($V_\text{O}$), including strain-tuned $V_\text{O}$ order, and electric-field-controlled transformations between perovskite and $V_\text{O}$-ordered structures. Perovskite cobaltites such as La 1– x Sr x CoO 3–δ provide a prime example, recent work demonstrating that strain engineering of $V_\text{O}$ ordering induces large (~10 7 erg/cm 3 ) perpendicular magnetic anisotropy. Here we show that $V_\text{O}$-ordered epitaxial La 0.5 Sr 0.5 CoO 3–δ films exhibit not only strong magnetic anisotropy, but also a giant form of anisotropic magnetoresistance (AMR). This has magnetic field, temperature, and angular dependencies in quantitative accord with conventional AMR, but with AMR ratios up to an extraordinary 40.3%, 20 times enhanced over bulk cobaltites, and ~10–100 times larger than typical transition metals. This giant AMR has no strong dependence on heteroepitaxial strain (between –2.1% and +1.8%) or thickness, and is instead ascribed to symmetry lowering associated with $V_\text{O}$ ordering. The AMR ratios thus obtained in this work are among the largest reported in the over 160-year history of this phenomenon, despite the absence of heavy elements.

36 MATERIALS SCIENCE↗
DOE OSTI2015

TUNING THE MAGNETOELECTRIC PROPERTIES WITH STRAIN IN EPITAXIAL CO0.9SN0.1FE2O4 THIN FILMS

We have grown epitaxial Sn substituted cobalt ferrite thin films of various thicknesses on piezoelectric Pb(Mg1/3Nb2/(3))(0.72)Ti0.28O3 substrates and investigated the strain-induced changes of magnetic properties. All films described in this work have been deposited by pulsed laser deposition (PLD) from stoichiometric target of Co0.9Sn0.1Fe2O4. The lattice structure, crystallinity and orientation of the thin films were determined by X-ray diffraction analysis. The magnetization of thin films was measured for both, in-plane and out-of-plane configurations, using a superconductor quantum interference device (SQUID) magnetometer at 300 K. The measurements reveal that the magnetic anisotropy is altered by the strain imposed from the substrate upon application of an electric field. The magnetoelastic coupling is demonstrated by a change of the remanent magnetisation. However, we find that this strain effect is thickness dependent. The biggest strain effect is recorded for the thickest film (400nm) where an electric-field-controlled contraction of the substrate of 0.1% induces a relative change in magnetic moment of 9.3%. The relative change of the remanent magnetisation is reduced with decreasing film thickness and is smaller than 3% for the thinnest film (25nm).

epitaxy↗
DOE OSTI2024

Strain‐Driven Stabilization of a Room‐Temperature Chiral Multiferroic with Coupled Ferroaxial and Ferroelectric Order

Noncollinear ferroic materials are sought after as testbeds to explore the intimate connections between topology and symmetry, which result in electronic, optical, and magnetic functionalities not observed in collinear ferroic materials. For example, ferroaxial materials have rotational structural distortions that break mirror symmetry and induce chirality. When ferroaxial order is coupled with ferroelectricity arising from a broken inversion symmetry, it offers the prospect of electric-field-control of the ferroaxial distortions and opens up new tunable functionalities. However, chiral multiferroics, especially ones stable at room temperature, are rare. A strain-stabilized, room-temperature chiral multiferroic phase in single crystals of BaTiS 3 is reported here. Using first-principles calculations, the stabilization of this multiferroic phase having P6 3 space group for biaxial tensile strains exceeding 1.5% applied on the basal ab-plane of the room temperature P6 3 cm phase of BaTiS 3 is predicted. The chiral multiferroic phase is characterized by rotational distortions of TiS 6 octahedra around the long c-axis and polar displacement of Ti atoms along the c-axis. Furthermore, the ferroaxial and ferroelectric distortions and their domains in P6 3 -BaTiS 3 are directly resolved using atomic resolution scanning transmission electron microscopy. Landau-based phenomenological modeling predicts a strong coupling between the ferroelectric and the ferroaxial order making P6 3 -BaTiS 3 an attractive test bed for achieving electric-field-control of chirality.

Chalcogenide↗