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Results for “electrical bandgap”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Influence of N{sup +} ions on bandgap and electrical resistivity of TiN thin films

In the present work, nitrogen ions are embedded into Ti thin films (200 nm) using low energy ion beam implantation (70 keV) by varying ions fluence from 4×10{sup 15} ions/cm{sup 2} to 2×10{sup 16} ions/cm{sup 2}. For this, Ti films were grown using DC magnetron sputtering in Ar environment (power 200 W). TiN films were then characterized using versatile techniques for estimating the band gap and electrical resistivity. X-ray diffraction pattern shows shift in peaks towards higher angle with increase in nitrogen fluence that confirms the introduction of strain in Ti films. UV-Vis spectra show that band gap is reduced from 3.75 eV to 1.7 eV with increase in fluence from 4×10{sup 15} ions/cm{sup 2} to 2×10{sup 16} ions/cm{sup 2}. Furthermore, electrical resistivity also decreases from 2.67×10{sup −4} Ω.cm to 2.31×10{sup −4} Ωcm with nitrogen ion fluence. Based on these results, it can be inferred that ion implantation is an effective approach for uniform distribution of N ions in host matrix and tuning of optical and electrical properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Optical and electrical properties of proton-implanted p -GaSb for electrical isolation

The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgap p -GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap. Electrical measurements show that the average sheet resistance of the implanted layer increases only by an order of magnitude from its pre-implantation value at a proton dose of ~10 13 cm -2 followed by 200 °C annealing. It is also shown that annealing reduces the implantation-induced optical absorption while still retaining a high electrical resistivity.

42 ENGINEERING↗
DOE OSTI2018

Solid electrolyte interphases for high-energy aqueous aluminum electrochemical cells

Electrochemical cells based on aluminum (Al) are of long-standing interest because Al is earth abundant, low cost, and chemically inert. The trivalent Al 3+ ions also offer among the highest volume-specific charge storage capacities (8040 mAh cm -3 ), approximately four times larger than achievable for Li metal anodes. Rapid and irreversible formation of a high-electrical bandgap passivating Al 2 O 3 oxide film on Al have, to date, frustrated all efforts to create aqueous Al-based electrochemical cells with high reversibility. Here, we investigate the interphases formed on metallic Al in contact with ionic liquid (IL)–eutectic electrolytes and find that artificial solid electrolyte interphases (ASEIs) formed spontaneously on the metal permanently transform its interfacial chemistry. The resultant IL-ASEIs are further shown to enable aqueous Al electrochemical cells with unprecedented reversibility. As an illustration of the potential benefits of these interphases, we create simple Al||MnO 2 aqueous cells and report that they provide high specific energy (approximately 500 Wh/kg, based on MnO 2 mass in the cathode) and intrinsic safety features required for applications.

Science & Technology - Other Topics↗
DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Analysis of the dependence of critical electric field on semiconductor bandgap

Abstract Understanding of semiconductor breakdown under high electric fields is an important aspect of materials’ properties, particularly for the design of power devices. For decades, a power-law has been used to describe the dependence of material-specific critical electrical field ( $${\mathcal{E}}_{\text{crit}}$$ E crit ) at which the material breaks down and bandgap ( E g ) . The relationship is often used to gauge tradeoffs of emerging materials whose properties haven’t yet been determined. Unfortunately, the reported dependencies of $${\mathcal{E}}_{\text{crit}}$$ E crit on E g cover a surprisingly wide range in the literature. Moreover, $${\mathcal{E}}_{\text{crit}}$$ E crit is a function of material doping. Further, discrepancies arise in $${\mathcal{E}}_{\text{crit}}$$ E crit values owing to differences between punch-through and non-punch-through device structures. We report a new normalization procedure that enables comparison of critical electric field values across materials, doping, and different device types. An extensive examination of numerous references reveals that the dependence $${\mathcal{E}}_{\text{crit}}$$ E crit ∝ E g 1.83 best fits the most reliable and newest data for both direct and indirect semiconductors. Graphical abstract

36 MATERIALS SCIENCE↗
DOE OSTI2016

Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers

Optical and electrical properties of nBn photodetectors using InAs/AlAs/AlSb/AlAs/InAs/InAs0.61Sb0.39W-structure superlattice (W-SL) absorbers are reported. Minority carrier lifetimes of 500 ± 50 ns and 400 ± 30 ns, and Auger coefficients of 2.1 × 10−26 cm6/s and 1.6 × 10−25 cm6/s, for samples with bandgap energies of 5.3 μm (W-SL A) and 7.5 μm (W-SL B) are reported at 100 K, respectively. Shockley–Read–Hall defect states are identified at 65 meV and 45 meV above the W-SL valence band edges for W-SLs A and B, respectively. Dark currents are also reported and compared with diffusion currents calculated using the carrier lifetime data, suggesting low vertical heavy hole diffusivity.

Olson, B. V. (ORCID:0000000314212541)↗
DOE OSTI2019

Optical and electrical properties of two-dimensional palladium diselenide

Two-dimensional (2D) noble-metal dichalcogenides exhibit exceptionally strong thickness-dependent bandgaps, which can be leveraged in a wide variety of device applications. A detailed study of their optical (e.g., optical bandgaps) and electrical properties (e.g., mobilities) is important in determining potential future applications of these materials. Here, we perform detailed optical and electrical characterization of 2D PdSe 2 nanoflakes mechanically exfoliated from a single-crystalline source. Layer-dependent bandgap analysis from optical absorption results indicates that this material is an indirect semiconductor with bandgaps of approximately 1.37 and 0.50 eV for the monolayer and bulk, respectively. Spectral photoresponse measurements further confirm these bandgap values. Moreover, temperature-dependent electrical measurements of a 6.8-nm-thick PdSe 2 flake-based transistor show effective electron mobilities of 130 and 520 cm 2 V –1 s –1 at 300 K and 77 K, respectively. Finally, we demonstrate that PdSe 2 can be utilized for short-wave infrared photodetectors. A room-temperature specific detectivity (D * ) of 1.8 × 10 10 cm Hz 1/2 W –1 at 1 μm with a band edge at 1.94 μm is achieved on a 6.8-nm-thick PdSe 2 flake-based photodetector.

36 MATERIALS SCIENCE↗
NASA NTRS2004

Buffer Layer Effects on Tandem InGaAs TPV Devices

Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.

Wilt, David M.↗
DOE OSTI2018

Temperature and electric field control of the bandgap in electrotoroidic nanocomposites by large-scale ab initio methods

An effective Hamiltonian scheme combined with a GPU implementation of the linear-scaling three-dimensional fragment (LS3DF) method is used to compute electronic properties of two topological objects in a nanocomposite: an electrical vortex coexisting with spontaneous electrical polarization over a wide temperature range and an electrical skyrmion over a range of applied electric fields. Temperature control of the vortex provides substantially larger range of control of bandgap and band alignment than field control of the skyrmion. Using temperature and electric fields to manipulate polarization and bond angle distortion in different component materials provides a handle for bandgap engineering in such nanostructures.

Materials Science↗
DOE OSTI2019

Wide-Bandgap Electronics Analysis

Electrical energy constitutes 40% of total primary energy consumption in the United States, and this is only expected to increase with broad adoption of electric vehicles and the proliferation of renewables. Building on its existing wide-bandgap (WBG) R&D and analysis activities, researchers at the National Renewable Energy Laboratory (NREL) are investigating new power electronic technologies based on WBG semiconductors, which are essential for advanced electrical energy generation, transmission, storage, and use. This work supports efforts by the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy's Advanced Manufacturing Office (AMO) to identify solutions to address the increase in electrical energy consumption through the development of more efficient power electronic devices.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2016

A plasma photonic crystal bandgap device

A fully tunable plasma photonic crystal is used to control the propagation of free space electromagnetic waves in the S to X bands of the microwave spectrum. An array of discharge plasma tubes forms a simple square crystal structure with the individual plasma dielectric constant tuned through variation in the plasma density. We show, through simulations and experiments, that transverse electric mode bandgaps exist, arising from the positive and negative dielectric constant regimes of the plasma, and that the respective bandgap frequencies can be shifted through changing the dielectric constant by varying discharge current density.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Tailoring Interlayer Coupling in Few-Layer MoS 2 with Stacking Configuration

Here we manipulated the stacking configuration of a few-layer MoS 2 to investigate the impact of interlayer coupling on electrical band engineering. By simultaneously synthesizing two distinct stacking types of MoS2 islands, wedding cake (W) and spiral (S), on the same substrate, we explored layer-dependent electrical properties under identical experimental conditions. We used multiple scanning probe microscopy techniques to map local electronic properties with respect to the number of layers, stacking configurations, and local heterogeneities. First-principles calculations verified the role of distinct interlayer coupling in terms of the interlayer distance. Our findings highlight the critical role of interlayer coupling in applications of transition metal dichalcogenides.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

We use hybrid-functional density functional theory-based Charge Transition Levels (CTLs) to study the electrical activity of near-interfacial oxygen vacancies located in the oxide side of 4H-Silicon Carbide (4H-SiC) power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). Based on the “amorphousness” of their local atomic environment, oxygen vacancies are shown to introduce their CTLs either within (permanently electrically active) or outside of (electrically inactive) the 4H-SiC bandgap. The “permanently electrically active” centers are likely to cause threshold voltage (V{sub th}) instability at room temperature. On the other hand, we show that the “electrically inactive” defects could be transformed into various “electrically active” configurations under simultaneous application of negative bias and high temperature stresses. Based on this observation, we present a model for plausible oxygen vacancy defects that could be responsible for the recently observed excessive worsening of V{sub th} instability in 4H-SiC power MOSFETs under high temperature-and-gate bias stress. This model could also explain the recent electrically detected magnetic resonance observations in 4H-SiC MOSFETs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗