From Electrical Characterization to Surface Contamination: The Role of Electrical-based Scanning Probe Microscopy Techniques
Explore the source record for details and available documents.
Carlos, Corey Ryan [Sandia National Laboratories (↗
SEARCH · Search NASA
Results for “electrical characterization”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Rapid Cryogenic Electrical Characterization of Materials and Devices Using Gifford-McMahon Cryocoolers
Thin-film heterostructures are necessary building blocks for superconducting and phononic quantum computing devices. Many new generations of quantum hardware demand extensive materials research to optimize performances at cryogenic temperatures (below 10 K). Here, we demonstrate compact cryogenic measurement systems capable of reaching sub-10K temperatures in less than three hours with the ability to measure AC/DC resistance and dielectric properties of thin-film materials. Our platform utilizes Gifford-McMahon (GM) cryocoolers as effective tools for providing high throughput cooling-warming cycles. We successfully used the GM-based measurement systems to measure 1) the superconducting transition temperature for Nb thin films (T c ~7.8 K), and 2) the temperature dependence of the dielectric constant in SiO 2 thin films down to 10 K. The fast electrical characterization feedback will be critical in developing robust materials and components for cryogenic computing devices.
36 MATERIALS SCIENCE↗
Interpretable Machine Learning for Characterizing Electric Vehicle Charging Behavior: Insights from Real-World Data
As electric vehicle (EV) adoption rises globally, concerns about the impact on aging electrical grids grow, particularly regarding the charging behavior of EV drivers. This study analyzes real-world driving and charging data from Ford battery electric vehicles (BEVs) collected between 2018 and 2019 to develop interpretable models that characterize charging behavior and quantify influencing factors. Prior research has relied on assumptions regarding driver behavior, often overlooking actual charging patterns. By employing generalized linear mixed models (GLMMs), this work offers insights into how various elements, such as next trip distance and state of charge (SOC), influence charging decisions. The dataset comprises over three million park-trip pairs from 1,997 vehicles, revealing that features related to driving behavior significantly dictate charging behavior, while infrastructure and regional factors have lesser impacts. The findings suggest that existing simulation models may oversimplify EV charging behavior assumptions. This work utilizes real-world EV driving and charging data to train interpretable models that describe charging behavior and quantify the factors most associated with how drivers use charging infrastructure. This research underscores the need for interpretable, data-driven methodologies to inform future EV infrastructure planning and grid management.
29 - ENERGY PLANNING, POLICY AND ECONOMY↗
Characterizing electrical panel capacity, breaker space, and loads in U.S. single-family homes
Electrical panels distribute electricity to appliances, equipment, and other building loads and maintain safety by preventing overloads of branch circuits, feeders, and utility service wires connecting homes to the grid. Load calculations in the National Electrical Code (NEC) determine the capacity of installed electrical panels in the United States, which are rated in amps (A). Circuit breakers within electrical panels affect the magnitude and number of loads that panels can serve. In home retrofits and renovations, existing electrical panels may not accommodate new electrical loads, either due to insufficient electrical capacity or a lack of available breaker spaces. Homes with these panel constraints may need to replace existing panels with new panels that have greater capacity and breaker space.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Characterizing electrical demand and load diversity of low-power water and space heating appliances in US homes
Home renovation and remodeling projects can involve costly and time consuming electrical infrastructure upgrades at the household level. From the grid perspective they also lead to costly replacement of local infrastructure, such as transformers, and can add stress to the grid at peak times. The emergence of innovative, power-efficient household appliances offers a way to minimize these problems. These appliances are designed for lower power consumption, simplifying installation through standard plug-in connections, reducing the need for new electric circuits/panels/service, and minimizing the peak power demand for the home. Key examples include low-power heat pump water heaters (HPWHs) and cold climate window heat pumps that operate on standard 120V outlets. To assess the real-world impact of these solutions, we compiled and analyzed power metering data from several US field studies. This data provides insights into the effects on peak power demand of selecting lower-power appliances. Our analysis focuses on several key metrics, including the maximum power demand of individual appliances, their operational runtime, continuous operation and load diversity. While individual low-power 120V space and water heating appliances offer significant peak demand reductions compared to 240V heat pump or resistance alternatives, their longer runtimes might increase the likelihood of operation during whole-dwelling peak events, albeit at lower power levels.
Less, Brennan↗
Printed Circuit Board (PCB) Electrical Characterization
Explore the source record for details and available documents.
Pargas Jr., Ricardo↗
Enabling Optical & Electrical Characterization of Al2O3/GaN Interfaces with Transparent ITO Contacts
Explore the source record for details and available documents.
Glaser, Caleb E↗
Antenna With Embedded Die in Glass Interposer for 6G Wireless Applications
This article presents the antenna-integrated glass interposer for D-band 6G wireless applications using dieembedding technology. Here, we implement the die-embedded package on glass substrates and characterize the electrical performance in the D-band. The electrical characterization employs embedded test dies with the 50-Ω ground–signal–ground (GSG) ports and coplanar waveguides. We achieve low-loss die-to-package transitions by using staggered dielectric vias, which are compared with the transitions of wire-bonding and flip-chip assembly. This article provides detailed information on the design, modeling, fabrication, and characterization of the die-to-package interconnects. This article also demonstrates the integration of microstrip patch antenna array and embedded dies in the D-band. The results show superior electrical performance provided by the die-embedded glass interposer. The die-to-package interconnect exhibits good matching (less than —10-dB S11) and low loss (0.2-dB loss) in the D-band. The integrated 1 × 8 patch antenna array shows 11.6-dB broadside gain and good matching with the embedded die. In addition, by using a temporary carrier, the antenna-integrated glass interposer also has great potential for further heterogeneous integration and thermal management.
42 ENGINEERING↗
Characterizing peak electricity demand for U.S. households: an assessment of end-use loads and demand factors
Understanding household peak electricity demand is critical to evaluate the technical need for electrical infrastructure upgrades. This study characterizes peak loads for existing and new equipment using metered data from a convenience sample of 11,940 U.S. dwellings from four sources, including 911 from two sources with end-use metering. After standardized data cleaning and labeling, we derived descriptive statistics for key metrics, such as maximum demand and demand factors, and developed predictive models relating 60- to 15-min demand for the National Electrical Code (NEC). Mean 15-min maximum demand was 9.7 kW (median 9.0 kW; IQR 7.0–11.5 kW, 95% CI 9.6–9.8 kW), indicating spare capacity in 98% of homes with hypothetical 100 A panels. Maximum demand increased with floor area and number of high-demand loads. Dwelling maximum demand was driven by higher-power, longer-duration heating appliances and vehicle charging, while most user-operated appliances contributed little. Demand factors are used to account for how most devices contribute less than their rated power to maximum demand. Existing load mean demand factors (28%; median 10%; IQR 0–58%; CI 28–29%) were higher than those for new loads (21%; median 7%; IQR 0–35%; CI 20–21%), because new loads changed the timing and magnitude of maximum demand. New high-demand loads had higher than average demand factors (40–60%). Whole dwelling demand factors support the NEC's 40% assumption, but they challenge its conservative 100% treatment of new HVAC. We propose a data-driven 50% demand factor for new equipment, which would align with metered data, improve affordability, and modernize electrical codes.
Appliances↗
Microstructure characterization of electric field assisted sintering (EFAS) sintered metallic and ceramic materials using local thermal diffusivity measurement
Electric Field Assisted Sintering (EFAS, also referred to as spark plasma sintering) is a powerful technology for the consolidation of powder materials. The high heating rate during the sintering process is critical for minimizing energy consumption, but it can also cause microstructure heterogeneities in sintered parts, such as spatially varied porosity. The examination of localized porosity usually requires the use of a scanning electron microscope with a carefully prepared surface. In this paper, photothermal radiometry is used to measure local thermal diffusivity and extract localized porosity of EFAS-sintered parts by using a percolation-threshold model. Applying this approach, we identified the radial position-dependent porosity variation in EFAS parts, which is likely formed due to the large temperature gradient during the sintering process. This approach has a unique advantage because it can measure samples with minimal or no surface preparation, enabling the possibility of in situ characterization in EFAS with proper system modification. Necessary modifications on the measurement approach for EFAS deployment and in situ characterization are also discussed.
36 MATERIALS SCIENCE↗
Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air
Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.
36 MATERIALS SCIENCE↗
Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications
β ‐Ga 2 O 3 ‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p ‐NiO/n‐ β ‐Ga 2 O 3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio ( I ON / I OFF ) of more than 10 6 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on ( V ON ) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β ‐Ga 2 O 3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β ‐Ga 2 O 3 can significantly improve high‐temperature electronic device and sensor performance.
Sohel, Shahadat H.↗
Thermal scanning probe and laser lithography for patterning nanowire based quantum devices
Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.
36 MATERIALS SCIENCE↗
Wafer-Scale Synthesis of 2D Materials by an Amorphous Phase-Mediated Crystallization Approach
The interest in the wafer-scale growth of two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), has been rising for transitioning from lab-scale devices to commercial-scale systems. Among various synthesis techniques, physical vapor deposition, such as pulsed laser deposition (PLD), has shown promise for the wafer-scale growth of 2D materials. However, due to the high volatility of chalcogen atoms (e.g., S and Se), films deposited by PLD usually suffer from a lack of stoichiometry and chalcogen deficiency. To mitigate this issue, excess chalcogen is necessary during the deposition, which results in problems like uniformity or not being repeatable. This study demonstrates a condensed-phase or amorphous phase-mediated crystallization (APMC) approach for the wafer-scale synthesis of 2D materials. This method uses a room-temperature PLD process for the deposition and formation of amorphous precursors with controlled thicknesses, followed by a post-deposition crystallization process to convert the amorphous materials to crystalline structures. This approach maintains the stoichiometry of the deposited materials throughout the deposition and crystallization process and enables the large-scale synthesis of crystalline 2D materials (e.g., MoS 2 and WSe 2 ) on Si/SiO 2 substrates, which is critical for future wafer-scale electronics. We show that the thickness of the layers can be digitally controlled by the number of laser pulses during the PLD phase. Optical spectroscopy is used to monitor the crystallization dynamics of amorphous layers as a function of annealing temperature. The crystalline quality, domain sizes, and the number of layers were explored using nanoscale and atomistic characterization (e.g., AFM, STEM, and EDS) along with electrical characterization to explore process–structure–performance relationships. Finally, this growth technique is a promising method that could potentially be adopted in conventional semiconductor industries for wafer-scale manufacturing of next-generation electronic and optoelectronic devices.
2D electronics↗
Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions
Graphene’s linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene–oxide–semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12 to 1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.
Ruiz, Isaac↗
Battery Second-Use Reconditioning Based on Sparse Data and Models (CRADA Final Report)
NREL will aid Smartville, Inc. to rapidly characterize electric vehicle (EV) battery state-of-health (SOH), characterize lifetime models, and forecast lifetime under various second-use reconditioning strategies.
25 ENERGY STORAGE↗
Pinhole electrical conductivity in polycrystalline Si on locally etched SiN$_y$/SiO$_x$ passivating contacts for Si solar cells
State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In this work, we focus on boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts. In PLENO contacts, excellent surface passivation is provided by the ~10 nm dielectric bilayer, while pinholes in the dielectric bilayer, that are filled with doped polycrystalline Si, provide charge-carrier selectivity and transport. During PLENO fabrication, etch undercut in the dielectric bilayer occurs. Here, using electrical characterization and microscopies, we show that undercut causes pinholes to be electrically resistive in PLENO. A processing sequence that eliminates the undercut in the final PLENO structure results in electrically conductive pinholes with low contact resistivity.
14 SOLAR ENERGY↗
Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering
Understanding mechanisms influencing electrical transport in material systems not only provides a scientific explanation for observed behavior but also offers insight into ways to enhance transport in devices. This study reports experimental hole mobility of 8 x 10 4 cm 2 V -1 s -1 in a Ge 0.92 Sn 0.08 , the highest recorded mobility for the GeSn system. A study of the material's quality is presented using structural and electrical characterization techniques, with transport data being supported by simulations using an extensive modeling framework. Quantum Hall measurements further indicate the material's high quality and potential spintronic applications, with extracted values of 0.0689$m$ 0 and 13.6 for the effective mass and effective g‐factor, respectively. It is observed that transport is limited by alloy disorder scattering at cryogenic temperatures. A comparative study between the presented structure and similar quantum well heterostructures revealed that the difference in hole mobilities is captured by a disparity in the reduced nominal alloy disorder scattering potential (Δ U alloy = 0.8 eV), that is lower than the value of a fully random alloy (Δ U alloy = 1.4–1.7 eV) potential. The difference in Δ U alloy suggests that heterostructures with similar geometries and alloy compositions can have different alloy disorder scattering, implying that an underlying mechanism, such as short‐range order, may be responsible and warrants further investigation.
77 NANOSCIENCE AND NANOTECHNOLOGY↗