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At least 19 records

Electrical Conductivity, Relaxation and the Glass Transition: A New Look at a Familiar Phenomenon

Annealed samples from a single melt of a 10 mol% K2O-90SiO2 glass were reheated to temperatures ranging from 450 to 800 C, held isothermally for 20 min, and then quenched in either air or a silicon oil bath. The complex impedance of both the annealed and quenched samples was measured as a function of temperature from 120 to 250 C using ac impedance spectroscopy from 1 Hz to 1 MHz. The dc conductivity, sigma(sub dc), was measured from the low frequency intercept of depressed semicircle fits to the complex impedance data. When the sigma(sub dc) at 150 C was plotted against soak temperature, the results fell into three separate regions that are explained in terms of the glass structural relaxation time, tau(sub S). This sigma(sub dc) plot provides a new way to look the glass transition range, Delta T(sub r). In addition, sigma(sub dc) was measured for different soak times at 550 C, from which an average relaxation time of 7.3 min was calculated. It was found that the size and position of the Delta T(sub r) is controlled by both the soak time and cooling rate.

Angel, Paul W.↗

Thermal history effects on electrical relaxation and conductivity for potassium silicate glass with low alkali concentrations

Electrical response measurements from 10 Hz to 100 kHz between 120 and 540 C were made on potassium-silicate glasses with alkali oxide contents of 2, 3, 5 and 10 mol percent. Low alkali content glasses were chosen in order to try to reduce the Coulombic interactions between alkali ions to the point that frozen structural effects from the glass could be observed. Conductivity and electrical relaxation responses for both annealed and quenched glasses of the same composition were compared. Lower DC conductivity (sigma(sub DC)) activation energies were measured for the quenched compared to the annealed glasses. The two glasses with the lowest alkali contents exhibited a non-Arrhenius concave up curvature in the log(sigma(sub DC)) against 1/T plots, which decreased upon quenching. A sharp decrease in sigma(sub DC) was observed for glasses containing K2O concentrations of 5 mol percent or less. The log modulus loss peak (M'') maximum frequency plots against 1/T all showed Arrhenius behavior for both annealed and quenched samples. The activation energies for these plots closely agreed with the sigma(sub DC) activation energies. A sharp increase in activation energy was observed for both series as the potassium oxide concentration decreased. Changes in the electrical response are attributed to structural effects due to different alkali concentrations. Differences between the annealed and quenched response are linked to a change in the distribution of activation energies (DAE).

Angel, Paul W.↗

A model for the scattering of high-frequency electromagnetic fields from dielectrics exhibiting thermally-activated electrical losses

An equivalent circuit model (ECM) approach is used to predict the scattering behavior of temperature-activated, electrically lossy dielectric layers. The total electrical response of the dielectric (relaxation + conductive) is given by the ECM and used in combination with transmission line theory to compute reflectance spectra for a Dallenbach layer configuration. The effects of thermally-activated relaxation processes on the scattering properties is discussed. Also, the effect of relaxation and conduction activation energy on the electrical properties of the dielectric is described.

Hann, Raiford E.↗

Physics and Chemistry of Te and HgTe-based Ternary Melts

Historically, the theoretical treatment of the liquid phases has always been more difficult and complicated than that for solid and gas phases. A liquid has no lattice structure as crystalline solids and the atoms/molecules in the liquid can migrate through it relatively rapidly. On the other hand, it is also interacting with many other atoms/molecules so that the simplifications of the kinetic theory of gases cannot be employed. For more complicated liquids, such as the liquids of high ionicity and those containing hydrogen bonds and electric dipoles, the understanding is far from complete. At the same time, accurate information on the physics and chemistry of semiconductor melts is needed for the quantitative descriptions of the process of crystal growth from melt. The pre-crystallization phenomena in the liquid phase are critical because the properties of the grown crystals depend on the state and structure of the melt as well as the thermal history of the melt during solidification process. However, the data on the liquid phase, such as thermophysical properties of semiconductor melts are scarce, especially for the HgTe-based II-VI ternary compound semiconductors because of their high vapor pressure and extreme toxicity. Analysis of the thermophysical properties of the melt can provide information about structural transitions of the melt during the solidification process. From a broader point of view, the structure of liquids is much more complicated than the crystalline solids, especially the relaxation behavior through different thermal histories. The theory of hetero-phase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics, field theory, physics of nuclear-matter, cosmology, biology and even sociology. This book summarizes the physics and chemistry from the experimental measurements and theoretical analyses of phase diagram, thermodynamic properties, density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary and ternary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the analyses of these results. The main objectives of this study are: (1) to provide the phase diagrams and thermodynamic properties of Hg-Cd-Te and Hg-Zn-Te systems through quantitatively fitting the experimental data by assuming an associated solution model for the liquid phase, (2) to experimentally measure the thermophysical properties of the Hg-Cd-Te and Hg-Zn-Te melts, including density, viscosity, electrical conductivity and thermal conductivity as functions of temperature and composition and (3) to enhance the fundamental knowledge of hetero-phase fluctuations and relaxation phenomena in the melts and extend our understanding of the solidification process in order to interpret the experimental results of crystal growth so as to improve the melt growth processes of the compound semiconductor. The physics and chemistry of Te and HgTe-based ternary melts were explored through the studies of the structural transformation during melting, the supercooling during solidification, the relaxation phenomena after rapid cooling of the melts and the metal-semiconductor transition in the melts through the analyses of electrical conductivity and Lorenz number. An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the analysis of the homogenization process in the melt will also be presented.

Thermophysical properties↗

Electromagnetic Repulsive Deicer for Aircraft

Scheme for removing ice from airfoils in flight adds little weight and demands relatively small amount of energy. Employing electromagnetic repulsion of conductors embedded in rubber covering on airfoil, scheme breaks up layer of ice by snapping it in manner of snapping rug to remove dust. Layer of elastomer conforms to shape of airfoil in relaxed state. When carrying large electrical currents, conductive ribbons in elastomer repel each other, creating ridged surface on airfoil. Sheet of ice on airfoil broken up in sudden transition from relaxed state to energized state.

Haslim, Leonard A.↗

Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

Li, C.↗

Structural Fluctuation and Thermophysical Properties of Molten II-VI Compounds

The objectives of the project is to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs and to study the fundamental heterophase fluctuations phenomena in these melts by: 1) Conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts such as viscosity, electrical conductivity, thermal diffusivity and density as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) Performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed similar relaxation behavior as the measured diffusivity. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previous reported.

Source record↗

Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. Thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range of 500 C to 900 C. The measured diffusivity as a function of temperature agrees fairly well with published data. However, a relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the melt, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed a similar relaxation behavior to the measured diffusivity. The density and volume expansion coefficients for pure Te and HgTe melts were measured as a function of temperature using a pycnometric method. A density maximum was found for both melts but no relaxation behavior was observed. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previously reported. A simple kinetic theory, which contains the formation reactions of Te polymerization that increases the molecular weight, was proposed to interpret the relaxation behavior of HgZnTe viscosity data.

Su, Ching-Hua↗

Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. It has long been recognized that liquid Te presents a unique case having properties between those of metals and semiconductors. The electrical conductivity for Te melt increases rapidly at melting point, indicating a semiconductor-metal transition. Te melts comprise two features, which are usually considered to be incompatible with each other: covalently bound atoms and metallic-like behavior. Why do Te liquids show metallic behavior? is one of the long-standing issues in liquid metal physics. Since thermophysical properties are very sensitive to the structural variations of a melt, we have conducted extensive thermophysical measurements on Te melt.

Su, Ching-Hua↗

Micromechanical and Electrical Properties of Monolithic Aluminum Nitride at High Temperatures

Micromechanical spectroscopy of aluminum nitride reveals it to possess extremely low background internal friction at less than 1x10(exp-4) logarithmic decrement (log dec) from 20 to 1200 T. Two mechanical loss peaks were observed, the first at 350 C approximating a single Debye peak with a peak height of 60x10(exp-4) log dec. The second peak was seen at 950 'C with a peak height of 20x 10' log dec and extended from 200 to over 1200 C. These micromechanical observations manifested themselves in the electrical behavior of these materials. Electrical conduction processes were predominately intrinsic. Both mechanical and electrical relaxations appear to be thermally activated processes, with activation energies of 0.78 and 1.32 eV respectively.

Goldsby, Jon C.↗

Micromechanical and Electrical Properties of Monolithic Aluminum Nitride at High Temperatures

Micromechanical spectroscopy of aluminum nitride reveals it to possess extremely low background internal friction at less than 1 x 10 (exp -4) logarithmic decrement (log dec.) from 20 to 1200 C. Two mechanical loss peaks were observed, the first at 350 C approximating a single Debye peak with a peak height of 60 x 10 (exp -4) log dec. The second peak was seen at 950 C with a peak height of 20 x 10 (exp -4) log dec. and extended from 200 to over 1200 C. These micromechanical observations manifested themselves in the electrical behavior of these materials. Electrical conduction processes were predominately intrinsic. Both mechanical and electrical relaxations appear to be thermally activated processes, with activation energies of 0.78 and 1.32 eV respectively.

Goldsby, Jon C.↗

Magnetohydrodynamic and Aerodynamic Assessment of Ballistic Entry of a 70deg Spherecone at Mars and Venus

An electrical conductivity database for continuum flow in a CO2 atmosphere over a 70 deg spherecone was created using the Data Parallel Line Relaxation Code computational fluid dynamics software to inform development of future magnetohydrodynamic subsystems at Venus and Mars. Sixteen freestream conditions were considered at Mars with atmospheric relative velocities from 5 to 8 km/s and altitudes between 20 and 80 km. Sixteen freestream conditions were considered at Venus with atmospheric relative velocities from 9 to 12 km/s and altitudes between 85 and 115 km. Results indicate that the total electrical conductivity in the flow volume always increases as velocity increases. At low velocities, the electrical conductivity is higher at high altitudes, while at high velocities, the electrical conductivity is higher at low altitudes. Three of the 80 km altitude computational fluid dynamics solutions show good agreement with Direct Simulation Monte Carlo results. In general, computational fluid dynamics predicts thinner shocks, higher electron number density, and similar vibrational temperatures as direct simulation Monte Carlo. The magnetohydrodynamic force was calculated at both Mars and Venus. Results indicate there may not be sufficient control authority to use magnetohydrodynamics as a trajectory control mechanism at Mars without artificially increasing the electrical conductivity of the flow, but there may be appreciable control authority for a drag-modulated aerocapture at Venus.

Destiny M Fawley↗

A Satellite Borne Cadmium Sulfide Total Corpuscular Energy Detector

The properties of single crystals of cadmium sulfide as radiation detectors are described. It has been found possible to select crystals such that: (a) The ratio of increase of conductivity under irradiation to the rate of absorption of energy in the crystal is substantially independent of particle energy (over the examined ranges of 500 ev to 80 kev for electrons and 5 kev to 180 kev for protons) and of the magnitude of energy flux (over the range from.005 to 10 ergs/cm(sup 2 -sec); and (b) The above ration is substantially the same for protons, electrons, alpha particles, x-rays, and gamma-rays. For a driving voltage of 100 volts, typical crystal yield currents of 10(sup -7) to 10(sup- 6) amperes for each erg/cm(sup 2-sec) of energy absorbed by the crystal. The threshold of such crystal detectors (resulting from dark currents of the order of 10(sup 10 amp) is typically 10(sup -3) ergs/cm(sup 2- sec). For the selected crystals a response-temperature coefficient of -0.25% per degree centigrade is found for the temperature range -50 deg C to + 50 deg C. A description is given of a complete CdS total corpuscular energy detector for the study of geomagnetically trapped radiation by means of a satellite. The detector described has a dynamic range great than 10(sup 4), a solid angle of 10(exp -3) steradian, and a detection threshold of approximately 1 erg/cm(sup 2-sec-sterad). A similar detector employing a small magnet for the selective exclusion of electrons is also described. Noteworthy practical features of these detectors for satellite and space probe experiments are: (a) Use of bare crystals, without covering foils, in order to detect charged particles having energies as low as hundreds of electron volts. (b) Simplicity of electronic auxiliaries. (c) Compactness, lightweight and nechanical ruggedness. (d) Low electrical power requirements; and (e) Conversion of conduction current to the rate of a twostate relaxation oscillator in order to facilitate telemetric transmission of data. A pair of such detectors was flown as part of the s-46 satellite payload on March 23, 1960, but due to vehicular failure an orbit was not achieved and the operation of the CdS detectors was observed for only, six minutes of flight.

Freeman, John W.↗

STS-78 Flight Day 6

On this sixth day of the STS-78 mission, the flight crew, Cmdr. Terence T. Henricks, Pilot Kevin R. Kregel, Payload Cmdr. Susan J. Helms, Mission Specialists Richard M. Linnehan, Charles E. Brady, Jr., and Payload Specialists Jean-Jacques Favier, Ph.D. and Robert B. Thirsk, M.D., are shown performing status checks on the life and microgravity experiments and conducting a brief maintenance procedure to correct an electrical circuit problem in the Bubble Drop Particle Unit. On this day, the crew is given four hours off to relax after five days of work with the life and microgravity science investigation being conducted on board.

Source record↗

Plasma turbulence and impulsive UV line emission in solar flares

Observations show that hard X-ray burst and UV lines rise and fall simultaneously on time scales of seconds. Hydrodynamic simulations of beam-heated atmospheres, based on collisional transport, however, produce only a gradual fall in UV emission, when the beam flux falls, due to the long time scale of conductive relaxation. It is suggested that this discrepancy might be explained by onset of plasma turbulence driven by the strong heat flux or by the beam return current going unstable. Such turbulence greatly reduces electrical and thermal conductivities. Fall in electrical conductivity reduces the hard X-ray flux by enhanced ohmic dissipation of the return current, while fall in thermal conductivity may cause the UV line to fall by reducing the transition region thickness.

Brown, John C.↗

The onset of electrohydrodynamic instability in isoelectric focusing

The onset of electrohydrodynamic motion associated with the imposition of an electric field across a thin layer of liquid has been investigated for the case in which the electrical conductivity varies linearly over the depth of the layer. The variation of the conductivity is due to concentration gradients in the charge-carrying solutes and its spatio-temporal evolution is represented by a convective-diffusion equation. When the viscous relaxation time is long compared to the time for charge relaxation, the analysis reveals that the neutral stability curves for the layer can be characterized by three dimensionless parameters: Ra(sub e) is equivalent to d(epsilon)E(sup 2, sub 0) Delta sigma/mu K(sub eff) sigma(sub 0), an electrical Rayleigh number; delta sigma/sigma(sub 0), the relative conductivity increment; and alpha, the transverse wave number of the disturbance. Here d is the thickness, epsilon is the dielectric constant, and mu is the viscosity of layer, E(sub 0) is the applied field strength at the lower conductivity boundary, and K(sub eff) is an effective diffusivity associated with the Brownian motion of the charge-carrying solutes. With viscous-stress-free boundaries, at which the electrical conductivity and the normal component of the electric field are prescribed, the critical Ra(sub e) is 1.504 x 10(exp 4) at a critical transverse wave number of 1.97 when Delta sigma/sigma(sub 0) is 10. As Delta sigma/sigma(sub 0) increases, the critical Ra(sub e) increases and shifts to shorter wavelength disturbances; the critical imposed field strength, however, passes through a minimum because the lower-conductivity boundary exerts a considerable stabilizing influence in the presence of steep conductivity gradients. Similar trends were obtained for liquid layers with rigid boundaries.

Baygents, James C.↗