Electrical switching device Patent
Electrical switching device comprising conductive liquid confined within square loop of deformable nonconductive tubing also used for leveling
Edman, C. W.↗
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Electrical Switching and Imaging of Antiferromagnetic Spins in Perovskite Epitaxial Thin Films
Electrical control of antiferromagnets is essential for the field of antiferromagnetic spintronics that promises ultrafast speed and terahertz dynamics. However, the large family of complex oxide antiferromagnets such as perovskites have been largely unexplored. Here, we demonstrate electrical switching and detection of Néel vector in LaFeO 3 epitaxial thin films with an epitaxy-enabled biaxial anisotropy, of which the switching behavior is understood by comparing to magnetic field controlled spin Hall magnetoresistance measurements. The electrical switching is corroborated by imaging of antiferromagnetic domains using X-ray Magnetic Linear Dichroism Photoemission Electron Microscopy. Electrical switching of 3-nm and 10-nm LaFeO 3 films was achieved over a wide temperature range of 25 to 300 K. This work offers an attractive platform for exploration of antiferromagnetic spintronics and other emerging phenomena such as potential insulating altermagnetism.
36 MATERIALS SCIENCE↗
Unveiling the nature of Ga-based chalcogenides for electrical switching selectors
Three-dimensional phase-change memory with stackable crossbar architecture is a promising technology to meet the urgent demands for high-density storage and rapid information processing in the era of explosive data growth. The performance depends strongly on the properties of ovonic threshold switching (OTS) selectors, which control the on/off states of memory units. Amorphous GaS serves as an outstanding OTS material, distinguished by its sizable mobility gap and high crystallization temperature, while the underlying mechanism continues to be inadequately comprehended. Here, in this work, we systematically studied the structural and electronic properties of amorphous Ga-X (X = S/Se/Te) using first-principles calculations. The results show that Ga atoms adopt tetrahedral motifs, while S/Se/Te atoms predominantly exhibit the structure of a distorted triangular pyramid. This structural arrangement is ascribed to the substantial dative bonds formed by the lone-pair electrons of the anions and the vacant sp3 orbitals around Ga atoms. Large mobility gaps (e.g., GaS: 2.43 eV, GaSe: 1.76 eV, GaTe: 1.26 eV) and distinct mid-gap states (e.g., ∼0.66 eV above valence band tail) ensure that these three chalcogenide glasses can be switched on under an external electric field while effectively suppressing leakage current without a bias, and the defect electronic states originate from short, robust Ga-Ga bonds due to the formation of distorted chain-like local structures. Our research elucidates the mechanisms of amorphous Ga-X as OTS materials, enriching the spectrum of electrical switching selectors by incorporating III-VI chalcogenides. This inclusion offers novel opportunities for the refinement and optimization of high-density integrated memory systems.
36 MATERIALS SCIENCE↗
Two Electrical Switching Phenomena In A Silver-Filled Epoxy
Two distinct electrical switching phenomena observed in experiments on commercial silver-filled epoxy: Depending on geometry of epoxy layer or strip and of metal electrical contacts, either transition from "off" (high-resistance) state at low applied electric field to "on" (low-resistance) state at high applied electric field; or transition from "on" (low resistance) at low applied electric field to "off" (high resistance) at high applied electric field. Improved understanding of phenomena leads to design of new and improved surge arrestors.
Javadi, Hamid↗
Tailoring Mid–Gap States of Chalcogenide Glass by Pressure–Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials
Phase change memory (PCM) and ovonic threshold switching (OTS) materials using chalcogenide glass are essential elements in advanced 3D memory chips. The mid–gap states, induced by the disorder and defects in the glass, are the physical mechanisms of the electrical switching behavior, while the origin of these trap states is still under debate and the medium–range clusters that break the global octet rule, such as over–coordinated atoms, are known to be responsible in various glass. Here, it is discovered that a large fraction of over–coordinated clusters fails to generate mid–gap states, which are probably caused by hypervalent bonding, a multi–centered covalent bond participated by delocalized lone–pair electrons. This is confirmed by the pressure–driven simulations of amorphous GeSe models, in which it is found that octahedral motifs and hypervalent bonds prevent the over–coordinated medium–range clusters from providing excessive electrons. In practical applications, compatible dopants can be used to change the number of hypervalent bonds, thus controlling the number of mid–gap states and consequently the performance of PCM and OTS materials. Finally, these results reveal the origin of mid–gap states in chalcogenide glasses, enabling extensive control in the development of pioneering electrical switching materials.
36 MATERIALS SCIENCE↗
Electrical Switching of Perovskite Thin-Film Resistors
Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).
Liu, Shangqing↗
Non-volatile, solid state bistable electrical switch
A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.
Williams, Roger M.↗
Bistable fluidic valve is electrically switched
Bistable control valve is selectively switched by direct application of an electrical field to divert fluid from one output channel to another. Valve is inexpensive, has no moving parts, and operates on fluids which are relatively poor electrical conductors.
Fiet, O.↗
Electrical switching in cadmium boracite single crystals
Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.
Takahashi, T.↗
Direct imaging of electrical switching of antiferromagnetic Néel order in α-Fe 2 O 3 epitaxial films
In this work, we report the direct observation of switching of the Néel vector of antiferromagnetic (AFM) domains in response to electrical pulses in micron-scale Pt/α-Fe 2 O 3 Hall bars using photoemission electron microscopy. Current pulses lead to reversible and repeatable switching with the current direction determining the final state, consistent with Hall effect experiments that probe only the spatially averaged response. Current pulses also produce irreversible changes in domain structure, in and even outside the current path. In both cases only a fraction of the domains switch in response to pulses. Furthermore, the analysis of images taken with different x-ray polarizations shows that the AFM Néel order has an out-of-plane component in equilibrium that is important to consider in analyzing the switching data. These results show that—in addition to effects associated with spin-orbit torques from the Pt layer, which can produce reversible switching—changes in AFM order can be induced by purely thermal effects.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electrical Switching of Nematic Plasmonic Nanocolloids for Infrared Solar Gain Control
Controlling solar gain is essential to reduce the energy consumption by residential and commercial buildings, which are responsible for ≈40% of all energy generated globally. However, the dynamic control of solar gain in the near-infrared that corresponds to ≈50% of the overall Sun's energy at the Earth's surface, separately from the visible spectral range has been a challenge, albeit commercial coatings provide passive control while retaining highly visible transmission. To address this problem, in this paper switchable silver colloids (SSCs) are demonstrated, colloidal analogs of the common silver coatings used for solar gain control. When dispersed in a nematic liquid crystal, orientations of such plasmonic silver nanoplates are controlled by ≈1 V low-voltage electric fields, allowing for sub-second switching of the near-infrared-based solar gain. Installed and retrofit products made from thin films of such nanoplate dispersions confined between glass and plastic substrates, respectively, exhibit electrically controlled infrared-based solar gain while retaining high visible-range transparency, low haze, and high color rendering index. Furthermore, this study's findings reveal a great potential of soft-matter systems in addressing energy-related problems.
36 MATERIALS SCIENCE↗
Specification, Measurement, and Control of Electrical Switching Transients
There have been several instances of susceptibility to switching transients. The Space Shuttle Spacelab Remote Acquisition Unit (RAU-A standard interface between Spacelab payloads and the Shuttle communications system) will shut down if the input 28 Vdc bus drops below 22 volts for more than 80 gs. Although a MIL-STD-461 derivative CS06 requirement was levied on the RAU, it failed to find this susceptibility. A heavy payload on one aircraft sags the 28 volt bus below 20 volts for milliseconds. Dc-dc converters have an operating voltage. A typical 28 Vdc-to-5 Vdc converter operates within tolerance when input potential is between 17-40 Vdc, A hold-up capacitor can be used to extend the time this range is presented to the convener when the line potential sags or surges outside this range. The designer must know the range of normal transients in order to choose the correct value of hold-up. This report describes the phenomena of electrical power bus transients induced by the switching of loads both on and off the bus, and control thereof.
Javor, K.↗
Electrical switching of a p-wave magnet
Magnetic states with zero magnetization but non-relativistic spin splitting are outstanding candidates for the next generation of spintronic devices. Their electronvolt (eV)-scale spin splitting, ultrafast spin dynamics and nearly vanishing stray fields make them particularly promising for several applications. A variety of such magnetic states with non-trivial spin textures have been identified recently, including even-parity d-wave, g-wave or i-wave altermagnets and odd-parity p-wave magnets. Achieving voltage-based control of the non-uniform spin polarization of these magnetic states is of great interest for realizing energy-efficient and compact devices for information storage and processing. Spin-spiral type II multiferroics are optimal candidates for such voltage-based control, as they exhibit an inversion-symmetry-breaking magnetic order that directly induces ferroelectric polarization, allowing for symmetry-protected cross-control between spin chirality and polar order. Here we combine photocurrent measurements, first-principles calculations and group-theory analysis to provide direct evidence that the spin polarization of the spin-spiral type II multiferroic NiI 2 exhibits odd-parity character connected to the spiral chirality. The symmetry-protected coupling between chirality and polar order enables electrical control of a primarily non-relativistic spin polarization. Our findings represent an observation of p-wave magnetism in a spin-spiral type II multiferroic, which may lead to the development of voltage-based switching of non-relativistic spin polarization in compensated magnets.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure
Not Available
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Unravelling the atomic mechanisms of tetrahedral doping in chalcogenide glass for electrical switching materials
This study highlights the crucial role of Si doping in OTS materials by revealing the atomic mechanisms of Si doping that result in high thermal stability, enhanced endurance, and reduced V th drift in a-GeSiSe materials for ovonic threshold switching (OTS) through first-principles calculations.
Gu, Rongchuan↗
Remote control electrical switching system has 1000-output capability
Electromechanical remote control system has a capacity of 1000 individual on-off functions yet uses only seven pairs of telephone-type lines for interconnection. Installation and maintenance costs are decreased by using this system.
Source record↗
Study of feasibility of solid-state electric switch gear for aircraft and spacecraft
The design of a solid-state circuit breaker that can be interconnected to a second breaker to form a transfer switch is presented. The breaker operates on a nominal 270-V dc circuit and controls power to loads of up to 15 A. Automatic overload trip is provided as a function of excess energy measured through the breaker and/or excess current through the breaker. After an overload trip, up to nine preprogrammable attempts to reclose may be tried with programmable delays between each attempt. The breaker or switch is remotely controllable. Test data on performance in the laboratory over temperatures from -45 to 100 C are provided. The feasibility of solid-state switch gear has been established.
Buchanan, E.↗
Switched electrical networks and bilinear equations
State equations arising in the description of power processing systems are described. The role played by Lie groups and Lie algebras in characterizing the inherent dynamical features of these systems is outlined, and network examples are presented for illustration.
Wood, J. R.↗