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Results for “electroluminescence”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

The variably spaced superlattice electroluminescent display - A new high efficiency electroluminescence scheme

A new, highly efficient dc electroluminescent display is presented. A variably spaced superlattice scheme is suggested herein which can produce high-energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias an order of magnitude less than the best dc electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer stack under bias and emerge into the active layer at an energy equal to the conduction-band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Brennan, K. F.↗
NASA NTRS1973

Planar electroluminescent panel techniques

Investigations of planar electroluminescent multipurpose displays with latch-in memory are described. An 18 x 24 in. flat, thin address panel with elements spacing of 0.100 in. was constructed which demonstrated essentially uniform luminosity of 3-5 foot lamberts for each of its 43200 EL cells. A working model of a 4-bit EL-PC (electroluminescent photoconductive) electrooptical decoder was made which demonstrated the feasibility of this concept. A single-diagram electroluminescent display device with photoconductive-electroluminescent latch-in memory was constructed which demonstrated the conceptual soundness of this principle. Attempts to combine these principles in a single PEL multipurpose display with latch-in memory were unsuccessful and were judged to exceed the state-of-the-art for close-packed (0.10 in. centers) photoconductor-electroluminescent cell assembly.

Kerr, C.↗
DOE OSTI2025

Ultranarrow electroluminescence from magnetic excitons in the van der Waals antiferromagnetic semiconductor NiPS 3

Electrically driven light emission from two-dimensional (2D) semiconducting materials has enabled numerous optoelectronic technologies, including light-emitting diodes, solid-state lasers, and single-photon sources for quantum communication. Here we report ultranarrow electroluminescence from the magnetic excitonic state of the van der Waals antiferromagnetic semiconductor NiPS 3 . This electroluminescence is enabled by the fabrication of gate-tunable NiPS 3 devices that remain electrically conductive below the antiferromagnetic ordering temperature of 155 K, ultimately allowing field-effect mobilities of 1.3 cm 2 V –1 s –1 and 4.5 cm 2 V –1 s –1 to be directly measured at room temperature and 7 K, respectively. By applying a high-frequency square wave voltage to the gate electrode of the resulting field-effect transistors, electroluminescence is capacitively induced from the magnetic excitons of NiPS 3 . Due to the coupling of these excitons with the underlying NiPS 3 antiferromagnetic order, the electroluminescence has an ultranarrow linewidth of 1 meV and a high degree of linear polarization (ρ = 0.78). In addition to facilitating fundamental studies of the coupling between spin states and excitons in van der Waals magnetic semiconductors, this work will accelerate the development of emerging 2D opto-spintronic applications.

two-dimensional materials↗
DOE OSTI2026

Gas electroluminescence in a dual phase xenon-doped argon detector

Noble element detectors using argon or xenon as the detection medium are widely used in the searches for rare neutrino and dark matter interactions. Xenon doping in liquid argon can preserve attractive properties of an argon target while enhancing the detectable signals with properties of xenon. Here, in this work, we deployed a dual-phase liquid argon detector with up to 4% xenon doping in the liquid and studied its gas electroluminescence properties as a function of xenon concentration. At ∼2% xenon doping in liquid argon, we measured ∼34 ppm of xenon in the gas and observed ∼2.5 times larger electroluminescence signals using vacuum ultraviolet silicon photomultipliers than those in pure argon. Analysis of signals of different wavelengths confirms that the argon gas electroluminescence process is strongly modified by the addition of xenon. We propose an analytical model to describe the underlying energy transfer mechanism in argon-xenon gas mixtures. Lastly, the implications of this measurement for low-energy ionization signal detection will be discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRSDate not supplied

Electroluminescence Imaging: A Study in the Impact of Microscopic Surface Defects

Electroluminescence (EL) imaging can be used as a quantitative characterization method for solar cell performance when combined with image processing, allowing for the impact of dust grain size on electroluminescence imaging characteristics to be investigated. Simulating these results via modelling can help to predict what dust grain sizes, if any, will have a greater impact on performance.

photovoltaics↗
NASA NTRSDate not supplied

Electroluminescence Imaging: A Quantitative Characterization Technique to Measure Dust Occlusion of Solar Cells

Electroluminescence (EL) imaging is a qualitative characterization technique that is typically used to identify cracks, corrosion, and other defects in solar cells. It consists of imaging a cell under forward bias, where the solar cell emits photons due to radiative electron-hole pair recombination. Over the past few years, our team has expanded this into a quantitative technique with the help of image processing. We have primarily used this method to investigate lunar dust occlusion of solar cells and arrays. Lunar dust accumulation on solar cells is a major concern because it directly limits light accessible to the cell, decreasing power output. Many teams are working to develop dust mitigation technology to protect these arrays on the surface of the Moon, but thoroughly characterizing their efficacy is important to ensure their success prior to launch. Here, we present EL as a quantitative characterization technique to observe dust coverage on solar cells that, when coupled with IV performance measurements, can offer unique insights into how dust coverage impacts power output. Quantitative electroluminescence imaging works by running EL images through an image processing script that first grayscales the image then plots a histogram of the brightness of each pixel. On its own, it does not offer much insight into a solar cell’s performance. However, when comparing images to a baseline pristine, undamaged, or uncoated solar cell, it can quickly provide information about the impacts of surface contaminants or damage to the cell. Here, we present a case study where quantitative EL is used to measure the efficacy of dust mitigation technology for flexible solar arrays and discuss the lessons learned about dust mitigation, testing with lunar simulant, and this characterization technique.

photovoltaics↗
NASA NTRS1987

Two-Layer, Full-Color Electroluminescent Display

Full-color, matrix-addressed electroluminescent display uses three different color phosphors located in two separate, superimposed layers to provide higher brightness, better contrast ratio, and higher resolution. Design used for such transparent, flat-panel display media as thin-film electroluminescent phosphors, liquid crystals, or light-emitting diodes.

Robertson, J. B.↗
NASA NTRS1986

Theoretical and material studies on thin-film electroluminescent devices

A highly efficient DC electroluminescent display is presented. A variably spaced superlattice structure is used to produce high energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias on order of magnitude less than the best DC electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer ZnSe/CaSrF2 stack under bias and emerge into the active layer at an energy equal to the conduction band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Summers, C. J.↗
NASA NTRS1978

Degradation resistance of semiconductor electroluminescent devices

The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of zinc and germanium provide an electroluminescent device having improved reliability. In the method of fabricating the P type conductivity layer, the zinc and germanium are simultaneously introduced into the layer during deposition of the layer.

Ladany, Ivan↗
NASA NTRS2008

Methods and apparatus of spatially resolved electroluminescence of operating organic light-emitting diodes using conductive atomic force microscopy

A conductive atomic force microscopy (cAFM) technique which can concurrently monitor topography, charge transport, and electroluminescence with nanometer spatial resolution. This cAFM approach is particularly well suited for probing the electroluminescent response characteristics of operating organic light-emitting diodes (OLEDs) over short length scales.

Hersam, Mark C.↗
DOE OSTI2026

Spectral and small-signal electroluminescence analysis of carrier dynamics in dual-color InGaN/GaN light-emitting diodes

Here, we study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells (QWs) were experimentally separated and analyzed. Spectral analysis and SSEL independently demonstrate that emission from the green QW is dominant at low current densities, consistent with its narrower bandgap, while emission from the blue QW is more significant at higher current densities, consistent with its reduced quantum confined Stark effect and larger wavefunction overlap. In addition, we demonstrate that the carrier recombination in the QWs is non-uniform, with carrier transport dramatically affecting the carrier distribution between QWs and the recombination in a specific QW. Finally, our measurements suggest that the effective active region contributing most strongly to radiative recombination corresponds to approximately two to three QWs on the p-GaN side, indicating limited carrier transport to more distant QWs in the structures studied.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

Evaluating Electroluminescence Imaging and Image Processing as a Quantitative Solar Cell Characterization Method

Mitigating dust accumulation on the surface of solar arrays is crucial for maintaining maximum power output. We propose investigating electroluminescence imaging paired with image processing as a means of evaluating various dust mitigation techniques. Image processing was able to clearly differentiate between pristine and dusted solar cells. Paired with traditional analysis techniques, this method proves to be a quick and powerful characterization tool.

Photovoltaic↗
DOE OSTI2025

Advanced Photovoltaic Module Characterization: Using Image Transformers for Current–Voltage Curve Prediction From Electroluminescence Images

Individual photovoltaic (PV) module health monitoring can be a daunting task for operation and maintenance of solar farms. Modules can be inspected through luminescence, thermal imaging, and current–voltage (I–V) curve analyzes for identification of damage and power loss. I–V curves provide easily interpretable data to determine module health as they directly provide electrical performance metrics. However, in order to obtain these curves, modules must be disconnected from the array and either removed to a solar simulator or characterized in situ with corrections for module temperature, the incident solar spectrum, and intensity. Luminescence or thermal images of a module are relatively easy to acquire in situ. Electroluminescence (EL) images highlight physical defects in the modules but do not provide easily interpretable features to correlate with electrical performance. This work presents a SWin transformer network to predict I–V curves for PV modules from their corresponding EL images. The predicted I–V curves allow the accurate prediction of the maximum power point (MPP), short-circuit current I sc , and open-circuit voltage V oc with a mean error less of than 1%. Comparing single diode model (SDM) parameters extracted from the predicted curves to those extracted from the true curves, the series resistance R s demonstrates a mean error of 5.19%, and the photocurrent I a mean error of 0.197%. The shunt resistance R sh and dark current Io parameters are predicted with larger errors because of their sensitivity to small changes in the I–V curve.

Byford, Brandon K. [New Mexico State Univ., Las Cr↗