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The Human Exploration and Development of Space Roadmap calls for Human Missions to Mars and other planets in the 2010 to 2023 timeframe.
Topics covered include: Induction Charge Detector with Multiple Sensing Stages; Generic Helicopter-Based Testbed for Surface Terrain Imaging Sensors; Robot Electronics Architecture; Optimized Geometry for Superconducting Sensing Coils; Sensing a Changing Chemical Mixture Using an Electronic Nose; Inertial Orientation Trackers with Drift Compensation; Microstrip Yagi Antenna with Dual Aperture-Coupled Feed; Patterned Ferroelectric Films for Tunable Microwave Devices; Micron-Accurate Laser Fresnel-Diffraction Ranging System; Efficient G(sup 4)FET-Based Logic Circuits; Web-Enabled Optoelectronic Particle-Fallout Monitor; SiO2/TiO2 Composite for Removing Hg from Combustion Exhaust; Lightweight Tanks for Storing Liquefied Natural Gas; Hybrid Wound Filaments for Greater Resistance to Impacts; Making High-Tensile-Strength Amalgam Components; Bonding by Hydroxide-Catalyzed Hydration and Dehydration; Balanced Flow Meters without Moving Parts; Deflection-Compensating Beam for Use inside a Cylinder; Four-Point-Latching Microactuator; Curved Piezoelectric Actuators for Stretching Optical Fibers; Tunable Optical Assembly with Vibration Dampening; Passive Porous Treatment for Reducing Flap Side-Edge Noise; Cylindrical Piezoelectric Fiber Composite Actuators; Patterning of Indium Tin Oxide Films; Gimballed Shoulders for Friction Stir Welding; Improved Thermal Modulator for Gas Chromatography; Nuclear-Spin Gyroscope Based on an Atomic Co-Magnetometer; Utilizing Ion-Mobility Data to Estimate Molecular Masses; Optical Displacement Sensor for Sub-Hertz Applications; Polarization/Spatial Combining of Laser-Diode Pump Beams; Spatial Combining of Laser-Diode Beams for Pumping an NPRO; Algorithm Optimally Orders Forward-Chaining Inference Rules; Project Integration Architecture; High Power Amplifier and Power Supply; Estimating Mixing Heights Using Microwave Temperature Profiler; and Multiple-Cone Sunshade for a Spaceborne Telescope.
4d transition metal oxides have emerged as promising materials for numerous applications including high mobility electronics. SrNbO 3 is one such candidate material, serving as a good donor material in interfacial oxide systems and exhibiting high electron mobility in ultrathin films. However, its synthesis is challenging due to the metastable nature of the d 1 Nb 4+ cation and the limitations in the delivery of refractory Nb. To date, films have been grown primarily by pulsed laser deposition (PLD), but development of a means to grow and stabilize the material via molecular beam epitaxy (MBE) would enable studies of interfacial phenomena and multilayer structures that may be challenging by PLD. To that end, SrNbO 3 thin films were grown using hybrid MBE for the first time using a tris(diethylamido)(tert-butylimido) niobium precursor for Nb and an elemental Sr source on GdScO 3 substrates. Varying thicknesses of insulating SrHfO 3 capping layers were deposited using a hafnium tert-butoxide precursor for Hf on top of SrNbO 3 films to preserve the metastable surface. Grown films were transferred in vacuo for x-ray photoelectron spectroscopy to quantify elemental composition, density of states at the Fermi energy, and Nb oxidation state. Ex situ studies by x-ray absorption near edge spectroscopy and scanning transmission electron microscopy illustrate that the SrHfO 3 capping plays an important role in preserving the crystalline quality of the material and the Nb 4d 1 metastable charge state under atmospheric conditions.
A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0<x<1). These materials exhibit attractively high degrees of chemical, mechanical, and thermal stability plus acceptably high resistance to sputtering. The electron-excitation cross sections of these materials are expected to exceed those of several other materials (including diamond) that are, variously, in use or under development for the same purpose. Moreover, by doping these materials with silicon, one can render them partly electrically conductive, thereby suppressing the undesired accumulation of electric charge that could otherwise occur during bombardment by ions. For experiments, thin films of AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N are supplied in elemental form, so that there is no need for thermal decomposition at the substrate surface. The nitride films thus formed were, variously, amorphous or polycrystalline. The nitride films were coated with surface layers of gold <100 thick. The MCPs were tested in a standard configuration in which the output stage of a first MCP was coupled to the input stage of a second MCP. Each pair of MCPs was mounted in a standard holder that included front and back contact rings and an anode for collecting the output electrons of the second MCP. The MCP pairs were biased at potentials between 1.7 and 1.9 kV, and count rates measured after preamplification and discrimination. To enable a direct comparison, in one pair, the second MCP was uncoated while the first MCP was coated over half its surface. The coated and uncoated sides of the half-coated MCP were exposed to fluxes of argon ions at kinetic energies of 1.0 and 0.5 keV. At 1.0 keV, the count rate for the coated side was about 2.3 times greater than that for the uncoated side; at 0.5 keV, the count rate for the coated side was about 1.8 times greater than that for the uncoated side.
Six technology highlights from the Science Mission Directorate (SMD) Heliophysics, Astrophysics, Earth, and Biological and Physical Sciences divisions. Technologies featured include 1. the 1653 m2 Solar Cruiser Solar Sail Propulsion system to enable missions to reach novel and otherwise difficult or impossible destinations for observing the Sun. 2. Technology sponsored by NASA and developed by MIT Space Nanotechnology Lab is developing high-performance space instrumentation for more powerful future X-ray telescopes that will study the dynamics of the high-energy universe. 3. Active thermal control technology that will help enable large ultra-stable telescopes needed to detect and characterize Earth-like planets around other stars. 4. SMD sponsored high-performance infrared sensors with reduced requirements for cooling onboard satellites and these sensors could potentially be flown on small satellite platforms like CubeSats. 5. A new technology that will utilize electron beams/ultraviolet light to remove dust that could help protect future space assets and astronauts from dangerous effects that arise from Moon/Mars dust exposure. 6. Studies using model organisms on ISS to understand the impact of the spaceflight environment on organisms in preparation for long-duration missions.
We have epitaxially stabilized a series of monoclinic (Al x Ga 1-x-y In y ) 2 O 3 alloys by careful choice of molecular beam epitaxy growth conditions, which balance alloy growth with suboxide desorption. The films are pseudomorphic to (010) β-Ga 2 O 3 substrates at thicknesses up to 150 nm with compositions ranging from (Al 0.01 Ga 0.83 In 0.16 ) 2 O 3 to (Al 0.24 Ga 0.75 In 0.03 ) 2 O 3 . The absorption edge shifts from approximately 4.62-5.14 eV with coincidently increasing Al and decreasing In mole fractions. J-V measurements reveal an increase in resistivity over four orders of magnitude with a maximum value of 4.2 x 10 5 Ω-cm for (Al 0.17 Ga 0.76 In 0.07 ) 2 O 3 , which has nearly identical lattice parameters (both in-plane and out-of-plane) to the underlying β-Ga 2 O 3 . Scanning transmission electron microscopy of this sample reveals a mostly uniform and single crystalline film, though we identify areas of non-uniform In incorporation and some γ-phase inclusions. This work demonstrates the feasibility of thick layers lattice-matched to β-Ga 2 O 3 with increased bandgap compared to phase-separation limited (Al,Ga) 2 O 3 . These alloys can enable higher bandgap epitaxial dielectrics and high sheet charge density transistors by increasing the conduction band offset with respect to β-Ga 2 O 3 .