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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Spatial profile of argon (1s 5 ) metastables in an electron beam generated plasma

Electron beams with an applied magnetic field generate a secondary cold plasma with a selective chemical composition, featuring low-energy ions and metastable species in the discharge periphery, ideal for low-damage plasma treatment of material substrates. In this work, we studied the plasma generated by an e-beam using a 4 kV voltage in a pure argon gas environment under a magnetic field of 150 G and in the pressure range of 25–90 mTorr. We measured the absolute spatial density profile of argon (1 s 5 ) metastables in an electron beam generated plasma by laser-induced fluorescence and found it to be of the order of 10 16 m −3 . The electron temperature and the electron density measured by a Langmuir probe were of the order of 10 16 m −3 and less than an eV respectively. Electron-impact quenching was identified as a significant loss mechanism for the Ar(1s 5 ) state, leading to the saturation of the metastable density at higher pressures. Outside the primary ionization region, the spatial distribution of argon metastables followed a linear diffusion profile, indicating negligible additional production in those regions.

EEDF↗
DOE OSTI2020

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

An etching system based on the interaction of electrons extracted from a direct current (DC) hollow-cathode (HC) Ar plasma and injected towards a Si3N4 covered silicon substrate located in the downstream reactive environment created by an additional remote CF 4 /O 2 plasma source was developed and evaluated. By controlling the properties of the injected beam electrons, this approach allows to deliver energy to a surface functionalized by exposure to reactive species, and initiate surface etching. The energy of the primary beam electrons is controlled by the acceleration voltage relative to the HC discharge. Ar atoms flow from the high-pressure HC discharge into the low pressure downstream reactive environment in the process chamber. For an acceleration voltage greater than the ionization potential of Ar and/or process gas species, the energetic primary beam electrons produce a secondary plasma in the process chamber, and can also cause additional dissociation. We have characterized the properties of the secondary plasma and also surface etching of Si 3 N 4 as a function of process parameters, including acceleration voltage (0-80 V), discharge current of the HC discharge (1-2 A), pressure (3.5-20 mTorr), source to substrate distance (1.5 to 5 cm), and feed gas composition (20% and 80% O2 in CF 4 /O 2 ). The electron energy probability function (EEPF) measured with a Langmuir probe about 2.5 cm below the extraction ring suggests several major groups of electrons for this situation, including high energy primary beam electrons with an energy that varies as the acceleration voltage is changed and low energy electrons produced by beam electron-induced ionization of the Ar gas in the process chamber. When a remote CF 4 /O 2 plasma is additionally coupled to the process chamber, Si 3 N 4 surfaces can be functionalized, and by varying the energy of the beam electrons, Si 3 N 4 etching can be induced by electron-neutral synergy effect with plasma-surface interaction. For conditions without beam electron injection, the remote plasma etching rate (ER) of Si 3 N 4 depends strongly on the O 2 concentration in the CF 4 /O 2 processing gas mixture and can be suppressed for O 2 -rich process conditions by the formation of a SiONF passivation layer on the Si 3 N 4 surface. The combination of the HC electron beam source with the remote plasma source (HCEB-RP) makes it possible to induce Si 3 N 4 etching for O 2 -rich remote plasma conditions where remote plasma by itself produces negligible Si 3 N 4 etching. The electron enhanced etching of Si 3 N 4 depends strongly on O 2 /CF 4 mixing ratio reflecting changing arrival rates of O and F species at the surface. Optical emission spectroscopy was used to estimate the ratio of gas phase F and O densities and found to be controlled by the gas mixing ratio and independent of HC EB operating conditions. At this time the detailed sequence of events operative in the etching mechanism is unclear. While the increase of the electron energy is ultimately responsible for initiating surface etching, at present we cannot rule out a role of ions from the simultaneously produced secondary plasma in plasma surface interaction mechanisms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1986

Working group report on beam plasmas, electronic propulsion, and active experiments using beams

The JPL Workshop addressed a number of plasma issues that bear on advanced spaceborne technology for the years 2000 and beyond. Primary interest was on the permanently manned space station with a focus on identifying environmentally related issues requiring early clarification by spaceborne plasma experimentation. The Beams Working Group focused on environmentally related threats that platform operations could have on the conduct and integrity of spaceborne beam experiments and vice versa. Considerations were to include particle beams and plumes. For purposes of definition it was agreed that the term particle beams described a directed flow of charged or neutral particles allowing single-particle trajectories to represent the characteristics of the beam and its propagation. On the other hand, the word plume was adopted to describe a multidimensional flow (or expansion) of a plasma or neutral gas cloud. Within the framework of these definitions, experiment categories included: (1) Neutral- and charged-particle beam propagation, with considerations extending to high powers and currents. (2) Evolution and dynamics of naturally occurring and man-made plasma and neutral gas clouds. In both categories, scientific interest focused on interactions with the ambient geoplasma and the evolution of particle densities, energy distribution functions, waves, and fields.

Dawson, J. M.↗
NASA NTRS1983

Collisionless electron shocks in electron-beam-plasma systems

One-dimensional Vlasov simulations show that when an electron beam is suddenly injected into a plasma, a fast-moving monotonic shock forms during the early stage of the transient plasma response. In the shock, the ions are nearly immobile. The shock appears to be an electrostatic electron-beam-plasma mode. The shock evolves from an initial positive potential perturbation, which is supported by an ion burst. The steepening of the perturbation into a shock is characterized by an electron-beam-plasma mode.

Singh, N.↗
DOE OSTI2024

Anticathode effect on electron kinetics in electron beam generated E × B plasma

Electron beam (e-beam) generated plasmas with applied crossed electric and magnetic (E x B) fields are promising for low damage processing of materials with applications to microelectronics and quantum information systems. In cylindrical e-beam E x B plasmas, radial confinement of electrons and ions is achieved by an axial magnetic field and radial electric field, respectively. To control the axial confinement of electrons, such e-beam generated plasma sources may incorporate a conducting boundary known as an anticathode, which is placed on the axially opposite side of the plasma from the cathode. In this work, it is shown that varying the anticathode voltage bias can control the degree to which the anticathode collects or repels incident electrons, allowing control of warm electron (electron energies in 10–30 eV range) and beam electron population confinement. It is suggested that the effect of the anticathode bias on the formation of these distinct electron populations is also associated with the transition between weak turbulence and strong Langmuir turbulence.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Anticathode effect on multimodal azimuthal oscillations in electron beam generated E×B plasma

Electron beam (e-beam) generated plasmas with applied crossed electric and magnetic (⁠E x B⁠) fields are promising for low-damage (gentle) material processing. However, these plasmas can be subject to the formation of plasma non-uniformities propagating in the ⁠E x B direction. These rotating plasma structures (or “spokes”) enhance the transport of charged species across the magnetic field, which can harm the gentle processing capability of the plasma. In this work, we investigate the role of electrostatically active boundaries on the spoke formation by incorporating a variable bias conducting boundary (known as an anticathode) placed on the axially opposite side of the cathode. Our findings indicate azimuthal mode suppression occurs when the anticathode is electron collecting. Furthermore, we show selective azimuthal mode suppression by biasing the anticathode to an intermediate potential between the cathode and anode potentials. In conclusion, these findings suggest a link between the axial electron confinement in the e-beam generated plasma and azimuthally propagating plasma structure formation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Multimodal azimuthal oscillations in electron beam generated E×B plasma

Electron beam (e-beam) generated plasmas with applied crossed electric and magnetic (E×B) fields are promising for low-damage material processing. However, these plasmas can be subject to the formation of azimuthally propagating structures that enhance the radial transport of energetic charged species, which can harm the gentle processing capability of the plasma. In this work, we investigate the azimuthal structure formation in an e-beam generated E×B plasma using experimental diagnostics and 2D3V particle-in-cell simulations. Our findings demonstrate the formation of multiple simultaneously occurring azimuthally propagating modes that exhibit nontrivial radial dependence. It is suggested that the multimodal azimuthal spectrum is caused in part by the radial outflow of ions in the plasma.

electron beams↗
NASA NTRS1984

Silicon nitride films deposited with an electron beam created plasma

The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

Bishop, D. C.↗
DOE OSTI2023

Measurement and reduction of Ar metastable densities by nitrogen admixing in electron beam-generated plasmas

Abstract Electron beam (e-beam) generated plasmas are useful for material processing applications such as deposition and etching because the plasmas deliver a large fluence of very low energy of ions to surfaces. Metastable species produced in the beam-region can also transport significant energy to the plasma periphery and surfaces. In this work, we have investigated the spatially resolved density of metastable Ar 1s 5 species produced in an Ar and Ar/N 2 e-beam generated plasma at pressures of 60–67 mTorr using laser-induced fluorescence (LIF). The experiments provide the first direct measure of absolute density and reduction of Ar 1s 5 in an e-beam generated plasma when argon is diluted with nitrogen. These results are consistent with previous predictions of numerical modeling and measurements using optical emission spectroscopy. The present spatially resolved LIF measurements directly quantify the reduction of Ar 1s 5 in the e-beam generated plasma by nitrogen admixing. This reduction was observed in the region of the electron beam and in the plasma periphery, where substrates are usually placed. For example, up to a threefold reduction of the density of Ar 1s 5 was measured when the argon background was diluted with 15.5% nitrogen at pressure of 60 mTorr. Ar 1s 5 reduction is attributed to excitation exchange with nitrogen molecules as well as the cooling of plasma electrons via inelastic collisions with nitrogen molecules.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Particle-in-cell modeling of electron beam generated plasma

Plasmas generated using energetic electron beams are well known for their low electron temperature (T e ) and plasma potential, which makes them attractive for atomic-precision plasma processing applications such as atomic layer etch and deposition. A 2-dimensional particle-in-cell model for an electron beam-generated plasma in argon confined by a constant applied magnetic field is described here in this article. Plasma production primarily occurs in the path of the beam electrons in the center of the chamber. The resulting plasma spreads out in the chamber through non-ambipolar diffusion with a short-circuiting effect allowing unequal electron and ion fluxes to different regions of the bounding conductive chamber walls. The cross-field transport of the electrons (and thus the steady-state characteristics of the plasma) are strongly impacted by the magnetic field. T e is anisotropic in the electron beam region, but low and isotropic away from the plasma production zone. The plasma density increases and the plasma becomes more confined near the region of production when the magnetic field strengthens. The magnetic field reduces both electron physical and energy transport perpendicular to the magnetic field. T e is uniform along the magnetic field lines and slowly decreases perpendicular to it. Electrons are less energetic in the sheath regions where the sheath electric field repels and confines the low-energy electrons from the bulk plasma. Even though electron and ion densities are similar in the bulk plasma due to quasi-neutrality, electron and ion fluxes on the grounded chamber walls are unequal at most locations. Electron confinement by the magnetic field weakens with increasing pressure, and the plasma spread out farther from the electron beam region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1980

Strongly turbulent stabilization of electron beam-plasma interactions

The stabilization of electron beam interactions due to strongly turbulent nonlinearities is studied analytically and numerically for a wide range of plasma parameters. A fluid mode coupling code is described in which the effects of electron and ion Landau damping and linear growth due to the energetic electron beam are included in a phenomenological manner. Stabilization of the instability is found to occur when the amplitudes of the unstable modes exceed the threshold of the oscillating two-stream instability. The coordinate space structure of the turbulent spectrum which results clearly shows that soliton-like structures are formed by this process. Phenomenological models of both the initial stabilization and the asymptotic states are developed. Scaling laws between the beam-plasma growth rate and the fluctuations in the fields and plasma density are found in both cases, and shown to be in good agreement with the results of the simulation.

Freund, H. P.↗