Search NASA⌕ Search

SEARCH · Search NASA

Results for “electron beam plasma”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Spatial profile of argon (1s 5 ) metastables in an electron beam generated plasma

Electron beams with an applied magnetic field generate a secondary cold plasma with a selective chemical composition, featuring low-energy ions and metastable species in the discharge periphery, ideal for low-damage plasma treatment of material substrates. In this work, we studied the plasma generated by an e-beam using a 4 kV voltage in a pure argon gas environment under a magnetic field of 150 G and in the pressure range of 25–90 mTorr. We measured the absolute spatial density profile of argon (1 s 5 ) metastables in an electron beam generated plasma by laser-induced fluorescence and found it to be of the order of 10 16 m −3 . The electron temperature and the electron density measured by a Langmuir probe were of the order of 10 16 m −3 and less than an eV respectively. Electron-impact quenching was identified as a significant loss mechanism for the Ar(1s 5 ) state, leading to the saturation of the metastable density at higher pressures. Outside the primary ionization region, the spatial distribution of argon metastables followed a linear diffusion profile, indicating negligible additional production in those regions.

EEDF↗
DOE OSTI2020

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

An etching system based on the interaction of electrons extracted from a direct current (DC) hollow-cathode (HC) Ar plasma and injected towards a Si3N4 covered silicon substrate located in the downstream reactive environment created by an additional remote CF 4 /O 2 plasma source was developed and evaluated. By controlling the properties of the injected beam electrons, this approach allows to deliver energy to a surface functionalized by exposure to reactive species, and initiate surface etching. The energy of the primary beam electrons is controlled by the acceleration voltage relative to the HC discharge. Ar atoms flow from the high-pressure HC discharge into the low pressure downstream reactive environment in the process chamber. For an acceleration voltage greater than the ionization potential of Ar and/or process gas species, the energetic primary beam electrons produce a secondary plasma in the process chamber, and can also cause additional dissociation. We have characterized the properties of the secondary plasma and also surface etching of Si 3 N 4 as a function of process parameters, including acceleration voltage (0-80 V), discharge current of the HC discharge (1-2 A), pressure (3.5-20 mTorr), source to substrate distance (1.5 to 5 cm), and feed gas composition (20% and 80% O2 in CF 4 /O 2 ). The electron energy probability function (EEPF) measured with a Langmuir probe about 2.5 cm below the extraction ring suggests several major groups of electrons for this situation, including high energy primary beam electrons with an energy that varies as the acceleration voltage is changed and low energy electrons produced by beam electron-induced ionization of the Ar gas in the process chamber. When a remote CF 4 /O 2 plasma is additionally coupled to the process chamber, Si 3 N 4 surfaces can be functionalized, and by varying the energy of the beam electrons, Si 3 N 4 etching can be induced by electron-neutral synergy effect with plasma-surface interaction. For conditions without beam electron injection, the remote plasma etching rate (ER) of Si 3 N 4 depends strongly on the O 2 concentration in the CF 4 /O 2 processing gas mixture and can be suppressed for O 2 -rich process conditions by the formation of a SiONF passivation layer on the Si 3 N 4 surface. The combination of the HC electron beam source with the remote plasma source (HCEB-RP) makes it possible to induce Si 3 N 4 etching for O 2 -rich remote plasma conditions where remote plasma by itself produces negligible Si 3 N 4 etching. The electron enhanced etching of Si 3 N 4 depends strongly on O 2 /CF 4 mixing ratio reflecting changing arrival rates of O and F species at the surface. Optical emission spectroscopy was used to estimate the ratio of gas phase F and O densities and found to be controlled by the gas mixing ratio and independent of HC EB operating conditions. At this time the detailed sequence of events operative in the etching mechanism is unclear. While the increase of the electron energy is ultimately responsible for initiating surface etching, at present we cannot rule out a role of ions from the simultaneously produced secondary plasma in plasma surface interaction mechanisms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Anticathode effect on electron kinetics in electron beam generated E × B plasma

Electron beam (e-beam) generated plasmas with applied crossed electric and magnetic (E x B) fields are promising for low damage processing of materials with applications to microelectronics and quantum information systems. In cylindrical e-beam E x B plasmas, radial confinement of electrons and ions is achieved by an axial magnetic field and radial electric field, respectively. To control the axial confinement of electrons, such e-beam generated plasma sources may incorporate a conducting boundary known as an anticathode, which is placed on the axially opposite side of the plasma from the cathode. In this work, it is shown that varying the anticathode voltage bias can control the degree to which the anticathode collects or repels incident electrons, allowing control of warm electron (electron energies in 10–30 eV range) and beam electron population confinement. It is suggested that the effect of the anticathode bias on the formation of these distinct electron populations is also associated with the transition between weak turbulence and strong Langmuir turbulence.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Anticathode effect on multimodal azimuthal oscillations in electron beam generated E×B plasma

Electron beam (e-beam) generated plasmas with applied crossed electric and magnetic (⁠E x B⁠) fields are promising for low-damage (gentle) material processing. However, these plasmas can be subject to the formation of plasma non-uniformities propagating in the ⁠E x B direction. These rotating plasma structures (or “spokes”) enhance the transport of charged species across the magnetic field, which can harm the gentle processing capability of the plasma. In this work, we investigate the role of electrostatically active boundaries on the spoke formation by incorporating a variable bias conducting boundary (known as an anticathode) placed on the axially opposite side of the cathode. Our findings indicate azimuthal mode suppression occurs when the anticathode is electron collecting. Furthermore, we show selective azimuthal mode suppression by biasing the anticathode to an intermediate potential between the cathode and anode potentials. In conclusion, these findings suggest a link between the axial electron confinement in the e-beam generated plasma and azimuthally propagating plasma structure formation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Multimodal azimuthal oscillations in electron beam generated E×B plasma

Electron beam (e-beam) generated plasmas with applied crossed electric and magnetic (E×B) fields are promising for low-damage material processing. However, these plasmas can be subject to the formation of azimuthally propagating structures that enhance the radial transport of energetic charged species, which can harm the gentle processing capability of the plasma. In this work, we investigate the azimuthal structure formation in an e-beam generated E×B plasma using experimental diagnostics and 2D3V particle-in-cell simulations. Our findings demonstrate the formation of multiple simultaneously occurring azimuthally propagating modes that exhibit nontrivial radial dependence. It is suggested that the multimodal azimuthal spectrum is caused in part by the radial outflow of ions in the plasma.

electron beams↗
DOE OSTI2023

Measurement and reduction of Ar metastable densities by nitrogen admixing in electron beam-generated plasmas

Abstract Electron beam (e-beam) generated plasmas are useful for material processing applications such as deposition and etching because the plasmas deliver a large fluence of very low energy of ions to surfaces. Metastable species produced in the beam-region can also transport significant energy to the plasma periphery and surfaces. In this work, we have investigated the spatially resolved density of metastable Ar 1s 5 species produced in an Ar and Ar/N 2 e-beam generated plasma at pressures of 60–67 mTorr using laser-induced fluorescence (LIF). The experiments provide the first direct measure of absolute density and reduction of Ar 1s 5 in an e-beam generated plasma when argon is diluted with nitrogen. These results are consistent with previous predictions of numerical modeling and measurements using optical emission spectroscopy. The present spatially resolved LIF measurements directly quantify the reduction of Ar 1s 5 in the e-beam generated plasma by nitrogen admixing. This reduction was observed in the region of the electron beam and in the plasma periphery, where substrates are usually placed. For example, up to a threefold reduction of the density of Ar 1s 5 was measured when the argon background was diluted with 15.5% nitrogen at pressure of 60 mTorr. Ar 1s 5 reduction is attributed to excitation exchange with nitrogen molecules as well as the cooling of plasma electrons via inelastic collisions with nitrogen molecules.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Particle-in-cell modeling of electron beam generated plasma

Plasmas generated using energetic electron beams are well known for their low electron temperature (T e ) and plasma potential, which makes them attractive for atomic-precision plasma processing applications such as atomic layer etch and deposition. A 2-dimensional particle-in-cell model for an electron beam-generated plasma in argon confined by a constant applied magnetic field is described here in this article. Plasma production primarily occurs in the path of the beam electrons in the center of the chamber. The resulting plasma spreads out in the chamber through non-ambipolar diffusion with a short-circuiting effect allowing unequal electron and ion fluxes to different regions of the bounding conductive chamber walls. The cross-field transport of the electrons (and thus the steady-state characteristics of the plasma) are strongly impacted by the magnetic field. T e is anisotropic in the electron beam region, but low and isotropic away from the plasma production zone. The plasma density increases and the plasma becomes more confined near the region of production when the magnetic field strengthens. The magnetic field reduces both electron physical and energy transport perpendicular to the magnetic field. T e is uniform along the magnetic field lines and slowly decreases perpendicular to it. Electrons are less energetic in the sheath regions where the sheath electric field repels and confines the low-energy electrons from the bulk plasma. Even though electron and ion densities are similar in the bulk plasma due to quasi-neutrality, electron and ion fluxes on the grounded chamber walls are unequal at most locations. Electron confinement by the magnetic field weakens with increasing pressure, and the plasma spread out farther from the electron beam region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Revealing the three-dimensional structure of microbunched plasma-wakefield-accelerated electron beams

Abstract Plasma wakefield accelerators use tabletop equipment to produce relativistic femtosecond electron bunches. Optical and X-ray diagnostics have established that their charge concentrates within a micrometre-sized volume, but its sub-micrometre internal distribution, which critically influences gain in free-electron lasers or particle yield in colliders, has proven elusive to characterize. Here, by simultaneously imaging different wavelengths of coherent optical transition radiation that a laser-wakefield-accelerated electron bunch generates when exiting a metal foil, we reveal the structure of the coherently radiating component of bunch charge. The key features of the images are shown to uniquely correlate with how plasma electrons injected into the wake: by a plasma-density discontinuity, by ionizing high- Z gas-target dopants or by uncontrolled laser–plasma dynamics. With additional input from the electron spectra, spatially averaged coherent optical transition radiation spectra and particle-in-cell simulations, we reconstruct coherent three-dimensional charge structures. The results demonstrate an essential metrology for next-generation compact X-ray free-electron lasers driven by plasma-based accelerators.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Room temperature plasma-etching and surface passivation of far-ultraviolet Al mirrors using electron beam generated plasmas

The development of optical systems operating in the far ultraviolet range (FUV, λ=100-200 nm) is limited by the efficiency of passivated aluminum (Al) mirrors. Although it is presently possible to obtain high-reflectivity FUV mirrors through physical vapor deposition, the process involves deposition with substrates at high temperatures, which is technically challenging for large optical elements. A novel passivation procedure for bare Al mirrors is reported. The treatment consisted of using a low-temperature electron-beam generated plasma produced in a gas mixture of Ar and SF6 to etch away the native oxide layer from the Al film, while simultaneously promoting the generation of a thin aluminum tri-fluoride (AlF3) layer on the Al surface. In the first section we analyze the effect of varying both ion energy and SF6 concentration on the FUV reflectance, thickness, composition, and surface morphology of the resulting AlF3 protective layers. In the second section, the reflectivity of samples is optimized at selected important FUV wavelengths for astronomical observations. Notably, samples attained state-of-the-art reflectances of 75% at 108.5 nm (He Lyman γ), 91% at 121.6 nm (H Lyman α), 90% at 130.4 nm (OI), and of 95% at 155.0 nm (C IV). The stability over time of these passivated mirrors is also investigated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Dissipation of electron-beam-driven plasma wakes

Metre-scale plasma wakefield accelerators have imparted energy gain approaching 10 gigaelectronvolts to single nano-Coulomb electron bunches. To reach useful average currents, however, the enormous energy density that the driver deposits into the wake must be removed efficiently between shots. Yet mechanisms by which wakes dissipate their energy into surrounding plasma remain poorly understood. Here, we report picosecond-time-resolved, grazing-angle optical shadowgraphic measurements and large-scale particle-in-cell simulations of ion channels emerging from broken wakes that electron bunches from the SLAC linac generate in tenuous lithium plasma. Measurements show the channel boundary expands radially at 1 million metres-per-second for over a nanosecond. Simulations show that ions and electrons that the original wake propels outward, carrying 90 percent of its energy, drive this expansion by impact-ionizing surrounding neutral lithium. The results provide a basis for understanding global thermodynamics of multi-GeV plasma accelerators, which underlie their viability for applications demanding high average beam current.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si 3 N 4 and Si etching

A material etching system was developed by combining beam electron injection from a direct current (DC) hollow-cathode (HC) electron source with the downstream reactive environment of a remote CF 4 /O 2 low temperature plasma. The energy of the injected beam electrons is controlled using an acceleration electrode biased positively relative to the HC Argon discharge. For an acceleration voltage greater than the ionization potential of Ar, the extracted primary electrons can produce a secondary plasma in the process chamber. We characterized the properties of the secondary plasma by performing Langmuir probe measurements of the electron energy probability function (EEPF) 2.5 cm below the extraction ring. The data indicate the existence of two major groups of electrons, including electrons with a primary beam electron energy which varies as the acceleration voltage is varied, along with low energy electrons produced by ionization of the Ar gas atoms in the process chamber by the injected beam electrons. When combining the HC Ar beam electron with a remote CF 4 /O 2 electron cyclotron wave resonance (ECWR) plasma, the EEPF of both the low energy plasma electron and beam electron components decreases. Additionally, we studied surface etching of Si3N4 and poly-crystalline Si (poly-Si) thin films as a function of process parameters, including the acceleration voltage (0-70 V), discharge current of the HC discharge (1-2 A), pressure (2- 100 mTorr), source to substrate distance (2.5 to 5 cm), and feed gas composition (with or without CF 4 /O 2 ). The direction of the incident beam electrons was perpendicular to the surface. Si 3 N 4 and poly-crystalline silicon etching are seen and indicate an electronneutral synergy effect. No/little remote plasma spontaneous etching was observed for the conditions used in this study, and the etching is confined to the substrate area irradiated by the injected beam electrons. The electron etched Si 3 N 4 surface etching rate profile distribution is confined within a ~30 mm diameter circle, which is slightly broader than the area for which poly-Si etching is seen, and coincides closely with the spatial profile of beam electrons as determined by the Langmuir probe measurements. The magnitude of poly-Si etching rate is by a factor of two times smaller than the Si 3 N 4 etching rate. In this paper, we discuss possible explanations of the data and the role of surface charging.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Filamentation and focusing of electron beams due to interactions with plasma waves

Results of numerical modeling of the interaction of an electron beam propagating across relativistic plasma waves indicate that electron beam filamentation and focusing may occur under certain conditions. The model is based on solving the relativistic equation of motion in three dimensions for the individual electrons in a tenuous Gaussian beam, as they pass through a relativistic plasma wave. Several electron beam and plasma wave parameters were varied, and the results are summarized. One of the results is that the spacing of the electron beam filaments correlates with the wavelength of the plasma wave. The electron beam filaments appear as vertical slabs after the beam exits the plasma waves. The electron beam also compresses to a focus after it exits the plasma, and the focal distance depends on several parameters including the electron beam energy and phase velocity of the relativistic plasma wave. It is suggested that these focusing and filamentation phenomena may be the basis for diagnostics schemes for laser plasma interactions. The parameters used in the model were electron beam energies in the 5–50 keV range and plasma wave properties typical for the beat-wave produced by CO2 lasers, which correspond to the facilities available in our laboratory. The limitations of these results to lower energy density beam and plasma regimes and to higher energy density regimes will be discussed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Plasma electron contribution to beam emittance growth from Coulomb collisions in plasma-based accelerators

Coulomb collisions with background plasma can cause emittance growth in plasma accelerators. This paper extends the theory to consider collisions with not only motionless plasma ions but also plasma electrons with relativistic motion, based on the Frankel cross section. The theory is verified by particle-in-cell simulations with a Monte Carlo collision module. Further, it is shown that the electron contribution has the same amount as that of ions in linear acceleration regime and may not be negligible in nonlinear regime depending on the plasma electron density and its relativistic bulk velocity.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Advanced Laser-driven Plasma Accelerator Electron-beam Diagnostics with COTR Techniques

A significant advance in laser-driven plasma accelerator (LPA) electron-beam diagnostics has recently been demonstrated based on coherent optical transition radiation (COTR) imaging. We find COTR signal strengths from a microbunched subset of beam exiting the LPA to be several orders of magnitude higher than that of incoherent optical transition radiation (OTR). The transverse sizes are only a few microns as deduced from the point-spread-function-related lobe structure. In addition, the far-field COTR interferometric images obtained on the same shot provide beam-size limits plus divergence and pointing information at the sub-mrad level when compared to a modified analytical model. The integrated image intensities can be used to estimate the microbunching fraction and relatable to the LPA process. Initial results in a collaborative LPA experiment will be reported for electron beam energies of about 215 MeV. A revised configuration is proposed to record energy and ene rgy spread via COTR on the same shot with the interferometer.

43 PARTICLE ACCELERATORS↗