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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Analysis of bunching of an electron beam at optical wavelengths

This paper presents an analysis of the bunching of an electron beam at optical wavelengths by means of the inverse Cerenkov effect. A laser light beam is used to modulate the velocity of the electrons, and this velocity modulation becomes charge-density modulation after an appropriate drift distance. The effects of energy and angular spread of the electrons are included, as well as the impact of scatterings in the index-matching medium. Bunching can occur with reasonable parameter values and the drift distance is of the order of several centimeters.

Chen, C. K.↗
NASA NTRS1990

Conjugate echoes of artificially injected electron beams detected optically by means of new image processing

Artificial auroral streaks were detected following two upward injections of energetic electrons (38 keV and 26 keV) from the Echo 4 rocket-borne electron accelerator. Newly developed image processing techniques are used to detect and describe the streaks. It is found that the potential of the payload remained below 1 kV during 45 mA injections at an altitude of 210 km. The echo streaks show little dispersion in time or space, suggesting that the portion of the beam returning to the northern hemisphere loss cone remained collimated and nearly monoenergetic. There was, however, a 70 percent loss in the return flux. The causes of this loss are discussed.

Hallinan, Thomas J.↗
NASA NTRS2000

Three-Dimensional Electron Optics Model Developed for Traveling-Wave Tubes

A three-dimensional traveling-wave tube (TWT) electron beam optics model including periodic permanent magnet (PPM) focusing has been developed at the NASA Glenn Research Center at Lewis Field. This accurate model allows a TWT designer to develop a focusing structure while reducing the expensive and time-consuming task of building the TWT and hot-testing it (with the electron beam). In addition, the model allows, for the first time, an investigation of the effect on TWT operation of the important azimuthally asymmetric features of the focusing stack. The TWT is a vacuum device that amplifies signals by transferring energy from an electron beam to a radiofrequency (RF) signal. A critically important component is the focusing structure, which keeps the electron beam from diverging and intercepting the RF slow wave circuit. Such an interception can result in excessive circuit heating and decreased efficiency, whereas excessive growth in the beam diameter can lead to backward wave oscillations and premature saturation, indicating a serious reduction in tube performance. The most commonly used focusing structure is the PPM stack, which consists of a sequence of cylindrical iron pole pieces and opposite-polarity magnets. Typically, two-dimensional electron optics codes are used in the design of magnetic focusing devices. In general, these codes track the beam from the gun downstream by solving equations of motion for the electron beam in static-electric and magnetic fields in an azimuthally symmetric structure. Because these two-dimensional codes cannot adequately simulate a number of important effects, the simulation code MAFIA (solution of Maxwell's equations by the Finite-Integration-Algorithm) was used at Glenn to develop a three-dimensional electron optics model. First, a PPM stack was modeled in three dimensions. Then, the fields obtained using the magnetostatic solver were loaded into a particle-in-cell solver where the fully three-dimensional behavior of the beam was simulated in the magnetic focusing field. For the first time, the effects of azimuthally asymmetric designs and critical azimuthally asymmetric characteristics of the focusing stack (such as shunts, C-magnets, or magnet misalignment) on electron beam behavior have been investigated. A cutaway portion of a simulated electron beam focused by a PPM stack is illustrated.

Kory, Carol L.↗
NASA NTRS1979

Structure and electrical activity of planar defects in EFG ribbons

Optical, electron beam induced current (EBIC), and transmission electron microscopy were used to study the structure and electrical activity of planar defects in EFG silicon. What appears to be twin boundaries by both optical microscopy plus etching, and by EBIC are in reality systems of microtwins, some of which are only a few atomic lattice planes thick. The electrical activity of planar defects appears to be correlated with emission of dislocations especially at termination points. Impurity effects may also play a role. Twin boundaries per se appear not to be electrically active.

Ast, D. G.↗
NASA NTRS1976

Laser-electron beam interaction applied to optical amplifiers and oscillators

Momentum modulation of a relativistic electron beam by a Nd:YAG laser is demonstrated. The electrons, at 100 MeV energy, interact with the laser light in helium gas at standard temperature and pressure. At an angle of 6.55 mrad between the two wavevectors, corresponding to the Cerenkov angle, a given electron remains in a field of constant phase as it passes through the light beam. The experimental arrangement is illustrated showing the trajectories of the electron and light. The particle momentum is measured by a mass spectrometer, and the angle between the wavevectors is controlled by a rotatable mirror. Experimental results indicate that momentum modulation of an electron beam may be used for amplification. A possible configuration for an optical klystron is illustrated.

Pantell, R. H.↗
NASA NTRS1981

Investigations of electron helicity in optically active molecules using polarized beams of electrons and positrons

A positronium-formation experiment with a high sensitivity to a possible relation between the helicity of beta particles emitted in nuclear beta decay and the optical asymmetry of biological molecules is presented. The experiment is based on a mechanism in which the electrons in optically active molecules possess a helicity of less than 0.001, too weak to detect in radiolysis experiments, the sign of which depends on the chirality of the isomer. A helicity-dependent asymmetry is sought in the formation of the triplet ground state of positronium when a low-energy beam of polarized positrons of reversible helicity interacts with an optically active substance coating a channel electron multiplier. Asymmetries between positronium decays observed at positive and negative helicities for the same substance can thus be determined with a sensitivity of 0.0001, which represents a factor of 100 improvement over previous positronium experiments.

Gidley, D. W.↗
NASA NTRS2005

Electron-beam lithography for micro and nano-optical applications

Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.

electron-beam lithography↗
NASA NTRS2012

Electron Beam Induced Luminescence of SiO2 Optical Coatings

Optical coatings of disordered thin film SiO,/SiO, samples undergoing electron beam bombardment exhibited a cathodoluminescence effect. Measurements were made of the absolute illuminance and emission spectra as functions of incident electron energy (0.2 keV to 30 keV). flux (approx. 0.1 nA/sq cm to > 100 nA/sq cm) and power (<50 nW/sq cm to > 3mW/sq cm) for coatings (approx.60 nm to approx.200 nm thick) on reflective metal substrates over a range of sample temperatures (approx.40 K to approx.400 K) and emission wavelengths (approx.260 nm to approx.5000 nm). Illuminance reached a plateau saturation intensity I(sub sat) approx. 10(exp -4)W/sq cm. scaling as [I(sub mc)/(I + I(sub mc)/I(sub sat)] as incident power I(sub mc) approached I(sub sat). Well below I(sub sat), illuminance scaled linearly with incident power for lower-energy non-penetrating radiation that deposited all of its energy in the dielectric film. At higher incident energies (> 1-5 keV) electrons penetrate the dielectric, depositing only a fraction of their energy in the dielectric film, where deposited energy scales as the ratio of film thickness to penetration range. Since electron range exhibits a peak below approx. 1 keV, the illuminance decreased with increasing energy for penetrating radiation. The temperature dependence of the illuminance. in general, increased with decreasing temperature. Changes in apparent color with temperature were also observed. Four bands in the UV/VIS/NIR range from 300 nm to 1000 nm were observed in spectral measurements; no significant luminescence was detected in a range from approx. 1000 nm to approx. 5000 nm. These different bands either increased or decreased in intensity and shifted slightly in energy with decreasing temperature. Our measurements are explained in terms of simple disordered band theory models based on atomic-scale stochastic transport of electrons in highly disordered insulating materials. The theoretical models provide a fundamental basis for understanding the dependence of cathodoluminescence on irradiation time, incident flux and energy. and sample thickness and temperature. The observed luminescence occurs when an incident high energy electron excites a valence band electron into the conduction band. Following the excitation. a complex series of transitions take place between the extended conduction states and the long-lived localized trapped states (or chromophores) associated with structural or compositional defects in the dielectric materials. Thc transport equations and models of thc spatial and energy distribution of the trapped states below the mobility edge, their occupancy, and transitions provide microscopic scale insights into this macroscopic phenomenon. Our observations and theoretical models are also compared with similar previous room temperature studies of similar SiO2 films.

Dennison, J. R.↗
NASA NTRS1979

Characterization of electrical discharges on Teflon dielectrics used as spacecraft thermal control

The dual effects of system degradation and reduced life of synchronous-orbit satellites as a result of differential spacecraft charging underscore the need for a clearer understanding of the prevailing electrical discharge phenomena. In a laboratory simulation, the electrical discharge current, surface voltage, emitted particle fluxes, and photo-emission associated with discharge events on electron beam irradiated silver-backed Teflon samples were measured. Sample surface damage was examined with optical and electron beam microscopes. The results are suggestive of a model in which the entire sample surface is discharged by lateral sub-surface currents flowing from a charge deposition layer through a localized discharge channel to the back surface of the sample. The associated return current pulse appears to have a duration which may be a signature by which different discharge processes may be characterized.

Yadlowsky, E. J.↗
NASA NTRS1977

DKDP /potassium dideuterium phosphate/ light valves

The use of potassium dideuterium phosphate (DKDP) light valves for optical data processing is discussed. The operating principles and structure of optically and electron beam addressed DKDPs are compared, and specifications for both devices given. Optically addressed DKDPs are capable of higher resolution and contrast, but both systems represent viable real time spatial light modulators adaptable to optical processing. Examples of real time data processing performed by the DKDPs include: image addition and subtraction; reduction of noise introduced by scattered light in recording media; reconstruction of computer generated and acoustic holograms; reconstruction of synthetic aperture radar data; retrieval of three-dimensional information in X-ray diagnoses; radar signal processing and display; and optical pattern recognition and correlation of images, which has applications for missile guidance systems.

Casasent, D.↗
NASA NTRS1969

Cathodochromic storage device

A memory and display device has been developed by combing a fast phosphor layer with a cathodochromic layer in a cathode ray tube. Images are stored as patterns of electron beam induced optical density in the cathodo-chromic material. The stored information is recovered by exciting the backing, fast phosphor layer with a constant current electron beam and detecting the emitted radiation which is modulated by absorption in the cathodochromic layer. The storage can be accomplished in one or more TV frames (1/30 sec each). More than 500 TV line resolution and close to 2:1 contrast ratio are possible. The information storage time in a dark environment is approximately 24 hours. A reconstituted (readout) electronic video signal can be generated continuously for times in excess of 10 minutes or periodically for several hours.

Bosomworth, D. R.↗
NASA NTRS1980

Viewing electron-beam welds in progress

With aid of optical filter, operator of electron-beam welding machine can view TV image of joint that is being welded and can make corrections as necessary. Operator can see when weld bead gets out of alinement, for example, and compensate for deflection of electron beam caused by changes in magnetic field.

Armenoff, C. T.↗
NASA NTRS1993

Diffractive optics fabricated by direct write methods with an electron beam

State-of-the-art diffractive optics are fabricated using e-beam lithography and dry etching techniques to achieve multilevel phase elements with very high diffraction efficiencies. One of the major challenges encountered in fabricating diffractive optics is the small feature size (e.g. for diffractive lenses with small f-number). It is not only the e-beam system which dictates the feature size limitations, but also the alignment systems (mask aligner) and the materials (e-beam and photo resists). In order to allow diffractive optics to be used in new optoelectronic systems, it is necessary not only to fabricate elements with small feature sizes but also to do so in an economical fashion. Since price of a multilevel diffractive optical element is closely related to the e-beam writing time and the number of etching steps, we need to decrease the writing time and etching steps without affecting the quality of the element. To do this one has to utilize the full potentials of the e-beam writing system. In this paper, we will present three diffractive optics fabrication techniques which will reduce the number of process steps, the writing time, and the overall fabrication time for multilevel phase diffractive optics.

Kress, Bernard↗
NASA NTRS1976

Use of fractography and sectioning techniques to study fracture mechanisms

Recent investigations of the effect of microstructure on the fracture mechanisms and fracture toughness of steels, aluminum alloys, and titanium alloys have used standard fractographic techniques and a sectioning technique on specimens plastically deformed to various strains up to fracture. The specimens are prepared metallographically for observation in both optical and electron beam instruments. This permits observations to be made about the fracture mechanism as it occurs in thick sections and helps remove speculation from the interpretation of fractographic features. This technique may be used in conjunction with other standard techniques such as extraction replicas and microprobe analyses. Care must be taken to make sure that the microstructural features which are observed to play a role in the fracture process using the sectioning technique can be identified with fractography.

Van Stone, R. H.↗
NASA NTRS1993

Micro-optics technology and sensor systems applications

The current generation of electro-optical sensors utilizing refractive and reflective optical elements require sophisticated, complex, and expensive designs. Advanced-technology-based electro-optical sensors of minimum size and weight require miniaturization of optical, electrical, and mechanical devices with an increasing trend toward integration of various components. Micro-optics technology has the potential in a number of areas to simplify optical design with improved performance. This includes internally cooled apertures, hybrid optical design, microlenses, dispersive multicolor microlenses, active dither, electronically controlled optical beam steer, and microscopic integration of micro-optics, detectors, and signal processing layers. This paper describes our approach to the development of micro-optics technology with our main emphasis for sensors applications.

Gal, George↗
NASA NTRS2004

Microanalytical Efforts in Support of NASA's Materials Science Programs

Following a brief overview of NASA s Microgravity Materials Science programs, specific examples will be given showing electron beam and optical microscopic applications to two-phase glass structures, dendrite tip radii, solid solution semiconductors, undercooled two-phase stainless steels and meteorites.

Gillies, Donald C.↗