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At least 19 records

The beta-SiC(100) surface studied by low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectra

The beta-SiC(100) surface has been studied by low energy electron diffraction, Auger electron spectroscopy, high resolution electron energy loss spectra (HREELS), and core level excitation EELS. Two new Si-terminated phases have been discovered, one with (3 x 2) symmetry, and the other with (2 x 1) symmetry. Models are presented to describe these phases. New results, for the C-rich surface, are presented and discussed. In addition, core level excitation EELS results are given and compared with theory.

Dayan, M.

Electron-Diffraction Analysis of Growth of GaAs

Report describes experiments that used reflection high-energy-electron diffraction (RHEED) to investigate behavior of GaAs surfaces during and after growth by molecular-beam epitaxy (MBE). Experimental results show dynamic RHEED measurements useful both as probes of surface and growth kinetics and as methods for determining and reproducing surface and growth conditions.

Lewis, B. F.

Multiple reflection high-energy electron diffraction beam intensity measurement system

A video-based analysis system for reflection high-energy electron diffraction (RHEED) is described which simultaneously measures the intensities and profiles of multiple diffraction beams. This system is used to record real-time RHEED intensity oscillations for layer-by-layer epitaxial growth. Fast Fourier transform analysis of the oscillation data is used to directly determine the growth rate and to accurately obtain phase information about the oscillations. This system is demonstrated and compared to other methods of recording RHEED oscillation data.

Resh, J. S.