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Direct Measurement of the Thickness-Dependent Electronic Band Structure of MoS_{2} Using Angle-Resolved Photoemission Spectroscopy
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Electronic band structure effects in the stopping of protons in copper [Electronic band structure non-linear effects in the stopping of protons in copper]
Here, we present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v = 0.02–10a.u. where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results are in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ~1.5) in the velocity range v = 0.07–0.3a.u., which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v → 0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.
Microstructure, optical property, and electronic band structure of cuprous oxide thin films
Cuprous oxide (Cu{sub 2}O) thin films were grown via radio frequency sputtering deposition at various temperatures. The dielectric functions and luminescence properties of the Cu{sub 2}O thin films were measured using spectroscopic ellipsometry and photoluminescence, respectively. High-energy peaks were observed in the photoluminescence spectra. Several critical points (CPs) were found using second derivative spectra of the dielectric functions and the standard critical point model. The electronic band structure and the dielectric functions were calculated using density functional theory, and the CP energies were estimated to compare with the experimental data. We identified the high-energy photoluminescence peaks to quasi-direct transitions which arose from the granular structures of the Cu{sub 2}O thin films.
Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes
The electrostatic potential variation across etched-and-regrown GaN p-i-n diodes for power electronics has been studied using electron holography in a transmission electron microscope. The potential profiles have been correlated with the composition profiles of Mg, Si, and O obtained by secondary ion mass spectroscopy. Electronic charges obtained from the potential profiles correlate well with the presence of Si and O impurities at regrown interfaces. The overlap of Mg and Si when Mg doped GaN is grown directly over an etched undoped GaN surface results in the formation of a highly doped p-n junction. The introduction of a thin undoped layer over the etched GaN surface prevents the formation of such a junction as the regrowth interface is moved away from the Mg-doped GaN, and results in diodes with improved reverse leakage currents, close to the best values of continuously grown p-i-n diodes. Potential profiles of continuously grown (not etched) p-i-n diodes are compared to those of etched-and-regrown diodes.
Improved quasiparticle self-consistent electronic band structure and excitons in β – LiGaO 2
The band structure of β–LiGaO 2 is calculated using the quasiparticle self-consistent QSGWˆ method where the screened Coulomb interaction Wˆ is evaluated including electron-hole interaction ladder diagrams and G is the one-electron Green's function. Improved convergence compared to previous calculations leads to a significantly larger band gap of about 7.0 eV. However, exciton binding energies are found to be large and lead to an exciton gap of about 6.0 eV if also a zero-point-motion correction of about –0.4 eV is included. Furthermore, these results are in excellent agreement with recent experimental results on the onset of absorption. Besides the excitons observed thus far, the calculations indicate the existence of a Rydberg-like series of exciton excited states, which is however modified from the classical Wannier exciton model by the anisotropies of the material and the more complex mixing of Bloch states in the excitons resulting from the Bethe-Salpeter equation. The exciton fine structure and the exciton wave functions are visualized and analyzed in various ways.
Electronic band structure of ZnO-rich highly mismatched ZnO{sub 1−x}Te{sub x} alloys
We synthesized ZnO{sub 1−x}Te{sub x} alloys with Te composition x < 0.23 by using pulsed laser deposition. Alloys with x < 0.06 are crystalline with a columnar growth structure while samples with higher Te content are polycrystalline with random grain orientation. Electron microscopy images show a random distribution of Te atoms with no observable clustering. We found that the incorporation of a small concentration of Te (x ∼ 0.003) redshifts the ZnO optical absorption edge by more than 1 eV. The minimum band gap obtained in this work is 1.8 eV for x = 0.23. The optical properties of the alloys are explained by the modification of the valence band of ZnO, due to the anticrossing interactions of the localized Te states with the ZnO valence band extended states. Hence, the observed large band gap reduction is primarily originating from the upward shift of the valence band edge. We show that the optical data can be explained by the band anticrossing model with the localized level of Te located at 0.95 eV above the ZnO valence band and the band anticrossing coupling constant of 1.35 eV. These parameters allow the prediction of the compositional dependence of the band gap as well as the conduction and the valence band offsets in the full composition range of ZnO{sub 1−x}Te{sub x} alloys.
Intermetallic solid solution Fe{sub 1-x}Co{sub x}Ga{sub 3}: Synthesis, structure, NQR study and electronic band structure calculations
Unlimited solid solution Fe{sub 1-x}Co{sub x}Ga{sub 3} was prepared from Ga flux. Its crystal structure was refined for Fe{sub 0.5}Co{sub 0.5}Ga{sub 3} (P4{sub 2}/mnm, a=6.2436(9), c=6.4654(13), Z=4) and showed no ordering of the metal atoms. A combination of the electronic band structure calculations within the density functional theory (DFT) approach and {sup 69,71}Ga nuclear quadrupole resonance (NQR) spectroscopy clearly shows that the Fe-Fe and Co-Co dumbbells are preferred to the Fe-Co dumbbells in the crystals structure. The band structure features a band gap of about 0.4 eV, with the Fermi level crossing peaks of a substantial density of electronic states above the gap for x>0. The solid solution is metallic for x>0.025. The study of the nuclear spin-lattice relaxation shows that the rate of the relaxation, 1/T{sub 1}, is very sensitive to the Co concentration and correlates well with the square of the density of states at the Fermi level, N{sup 2}(E{sub F}). - Graphical abstract: Rate of the nuclear spin-lattice relaxation, 1/T{sub 1}, observed in the {sup 69}Ga NQR experiments for the intermetallic solid solution Fe{sub 1-x}Co{sub x}Ga{sub 3} is the highest for x=0.25 with the highest calculated density of electronic states at the Fermi level, N(E{sub F}); in general, 1/T{sub 1} correlates with N{sup 2}(E{sub F}). Highlights: Black-Right-Pointing-Pointer Fe{sub 1-x}Co{sub x}Ga{sub 3} solid solution is prepared in single crystalline form from Ga flux. Black-Right-Pointing-Pointer In the crystal structure Fe-Fe and Co-Co dumbbells are preferred to Fe-Co dumbbells. Black-Right-Pointing-Pointer Metal-to-semiconductor transition occurs at 0<x<0.025. Black-Right-Pointing-Pointer {sup 69,71}Ga NQR spectra efficiently probe local environment of two independent Ga atoms. Black-Right-Pointing-Pointer Rate of nuclear spin-lattice relaxation follows squared DOS at the Fermi level.
Banded Electron Structure Formation in the Inner Magnetosphere
Banded electron structures in energy-time spectrograms have been observed in the inner magnetosphere concurrent with a sudden relaxation of geomagnetic activity. In this study, the formation of these banded structures is considered with a global, bounce-averaged model of electron transport, and it is concluded that this structure is a natural occurrence when plasma sheet electrons are captured on closed drift paths near the Earth. These bands do not appear unless there is capture of plasma sheet electrons; convection along open drift paths making open pass around the Earth do not have time to develop this feature. The separation of high-energy bands from the injection population due to the preferential advection of the gradient-curvature drift creates spikes in the energy distribution, which overlap to form a series of bands in the energy spectrograms. The lowest band is the bulk of the injected population in the sub-key energy range. Using the Kp history for an observed banded structure event, a cloud of plasma sheet electrons is captured and the development of their distribution function is examined and discussed.
Structural modulation, physical properties, and electronic band structure of the kagome metal UCr 6 Ge 6
The chemical flexibility of the 𝑅𝑀 6 𝑋 6 stoichiometry, where an 𝑓-block element is intercalated in the CoSn structure type, allows for the tuning of flatbands associated with kagome lattices to the Fermi level and for emergent phenomena due to interactions between the 𝑓- and 𝑑-electron lattices. Yet, 5𝑓 members of the “166” compounds are underrepresented compared with 4𝑓 members. In this work, we report single-crystal growth of UCr 6 Ge 6 , which crystallizes in a monoclinically distorted Y 0.5 Co 3 Ge 3 -type structure. The real-space character of the modulation, which is unique within the 𝑅𝑀 6 𝑋 6 family, is approximated by a 3×1×2 supercell of the average monoclinic cell. The compound has kagome-lattice flatbands near the Fermi level and a moderately enhanced electronic heat capacity, as evidenced by its low-temperature Sommerfeld coefficient (𝛾=86.5 mJ mol −1 K −2 ) paired with band structure calculations. The small, isotropic magnetization and featureless resistivity of UCr 6 Ge 6 suggest itinerant uranium 5𝑓 electrons and Pauli paramagnetism. Angle-resolved photoemission spectroscopy results provide evidence for uranium 5𝑓 weight at the Fermi level and for a flatband near the Fermi level associated with the chromium 3𝑑 kagome lattice. The isotropic magnetic behavior of the uranium 5𝑓 electrons starkly contrasts with localized behavior in other uranium 166 compounds, highlighting the high tunability of the magnetic ground state across the material family.
Electronic band structure and Kondo coupling in YbRh2Si2
The electronic band structure of YbRh2Si2 is calculated in a relativistic framework including correlation corrections and magnetization of the Yb ion and compared to detailed angle-resolved photoemission spectra. The photoemission spectra for LuRh2Si2 are used as reference to identify electronic bands with no f symmetry. The calculated band structure manifests a 4f13 spin-polarized configuration leaving the unoccupied state at 1.4eV above the Fermi energy. At the band theory level, the 4f bands are located far below the Fermi level and the anisotropic Coulomb interaction within the 4f shell spreads the multilevel into broader 4f complexes below -2.5eV . The photoemission spectra obtained on YbRh2Si2 show a clear f -multilevel splitting into j=7/2 and 5/2 excitations. The interaction of the 4f7/2 levels close to the Fermi energy with two conduction bands shows visible hybridization gaps of 45 and 80meV, respectively. We discuss the origin of these excitations and provide an analysis according to Anderson's single-impurity model with parameters suggested by the band-structure calculation and the photoemission spectra. Both experiment and theory indicate nearly identical Fermi surfaces for LuRh2Si2 and YbRh2Si2 . The valency of Yb in YbRh2Si2 is estimated to be close to +3.
Electronic band structures and photovoltaic properties of MWO{sub 4} (M=Zn, Mg, Ca, Sr) compounds
Divalent metal tungstates, MWO{sub 4}, with wolframite (M=Zn and Mg) and scheelite (M=Ca and Sr) structures were prepared using a conventional solid state reaction method. Their electronic band structures were investigated by a combination of electronic band structure calculations and electrochemical measurements. From these investigations, it was found that the band structures (i.e. band positions and band gaps) of the divalent metal tungstates were significantly influenced by their crystal structural environments, such as the W-O bond length. Their photovoltaic properties were evaluated by applying to the working electrodes for dye-sensitized solar cells. The dye-sensitized solar cells employing the wolframite-structured metal tungstates (ZnWO{sub 4} and MgWO{sub 4}) exhibited better performance than those using the scheelite-structured metal tungstates (CaWO{sub 4} and SrWO{sub 4}), which was attributed to their enhanced electron transfer resulting from their appropriate band positions. - Graphical abstract: The electronic band structures of divalent metal tungstates are described from the combination of experimental results and theoretical calculations, and their electronic structure-dependent photovoltaic performances are also studied. Highlights: > MWO{sub 4} compounds with wolframite (M=Zn and Mg) and scheelite structure (M=Ca and Sr) were prepared. > Their electronic band structures were investigated by the calculations and the measurements. > Their photovoltaic properties were determined by the crystal and electronic structures.
Engineering the Electronic Band Structure for Multiband Solar Cells
Using the unique features of the electronic band structure of GaNxAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the Band Anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications.
The LDA+U calculation of electronic band structure of GaAs
We present the electronic band structure of bulk gallium arsenide (GaAs) using first principle approach. A series of calculations has been performed by applying norm-conserving pseudopotentials and ultrasoft non-norm-conserving pseudopotentials within the density functional theory. These calculations yield too small band gap as compare to experiment. Thus, we use semiemperical approach called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U), which is quite effective in order to describe the band gap of GaAs.
Electronic band structure of magnetic bilayer graphene superlattices
Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.
Electronic band structure and magnetism of CoFeV 0.5 Mn 0.5 Si
Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV 0.5 Mn 0.5 Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that CoFeV 0.5 Mn 0.5 Si shows a nearly half-metallic band structure with a degree of spin polarization of about 93%. In addition, this value can be enhanced by the application of tensile strain. The room temperature x-ray diffraction patterns are indexed with the cubic crystal structure without secondary phases. The annealed sample shows ferromagnetic order with the Curie temperature well above room temperature ( T c = 657 K) and a saturation magnetization of about 92 emu/g. Our results indicate that CoFeV 0.5 Mn 0.5 Si has a potential for room temperature spin-transport-based devices.
8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates
The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.
Ultraviolet optical properties and electronic band structure of magnesium oxide.
UV optical properties and electronic band structure of magnesium oxide