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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Electronic Properties of Carbon Nanotubes and Junctions

Metallic and semiconducting Single Wall Carbon Nanotubes (CNT) have recently been characterized using scanning tunneling microscopy (STM) and the manipulation of individual CNT has been demonstrated. These developments make the prospect of using CNT as molecular wires and possibly as electronic devices an even more interesting one. We have been modeling various electronic properties such as the density of states and the transmission coefficient of CNT wires and junctions. These studies involve first calculating the stability of junctions using molecular dynamics simulations and then calculating the electronic properties using a pi-electron tight binding Hamiltonian. We have developed the expertise to calculate the electronic properties of both finite-sized CNT and CNT systems with semi-infinite boundary conditions. In this poster, we will present an overview of some of our results. The electronic application of CNT that is most promising at this time is their use as molecular wires. The conductance can however be greatly reduced because of reflection due to defects and contacts. We have modeled the transmission through CNT in the presence of two types of defects: weak uniform disorder and strong isolated scatterers. We find that the conductance is affected in significantly different manners due to these defects Junctions of CNT have also been imaged using STM. This makes it essential to derive rules for the formation of junctions between tubes of different chirality, study their relative energies and electronic properties. We have generalized the rules for connecting two different CNT and have calculated the transmission and density of states through CNT junctions. Metallic and semiconducting CNT can be joined to form a stable junction and their current versus voltage characteristics are asymmetric. CNT are deformed by the application of external forces including interactions with a substrate or other CNT. In many experiments, these deformation are expected to occur naturally. We will present some preliminary results of our calculations of the modification of CNT electronic properties as a result of deformations.

Anantram, M. P.↗
NASA NTRS1978

Study of electronic properties in proton- and electron-irradiated GaAlAs and GaAs solar cell materials

Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and the deep level transient spectroscopy methods were employed to study defect properties in the proton-irradiated n-GaAs materials. Defect energy levels, thermal emission rates, and capture cross sections of electrons as well as trap densities were deduced from these measurements and the results are presented. Correlations between the measured defect parameters and the dark I-V characteristics of the n-GaAs Schottky barrier diodes are also discussed. Defect energy levels (i.e., electron traps) determined are also compared with published data in order to identify their physical origins.

Li, S. S.↗
NASA NTRS2004

Materials Characterization at Utah State University: Facilities and Knowledge-base of Electronic Properties of Materials Applicable to Spacecraft Charging

In an effort to improve the reliability and versatility of spacecraft charging models designed to assist spacecraft designers in accommodating and mitigating the harmful effects of charging on spacecraft, the NASA Space Environments and Effects (SEE) Program has funded development of facilities at Utah State University for the measurement of the electronic properties of both conducting and insulating spacecraft materials. We present here an overview of our instrumentation and capabilities, which are particularly well suited to study electron emission as related to spacecraft charging. These measurements include electron-induced secondary and backscattered yields, spectra, and angular resolved measurements as a function of incident energy, species and angle, plus investigations of ion-induced electron yields, photoelectron yields, sample charging and dielectric breakdown. Extensive surface science characterization capabilities are also available to fully characterize the samples in situ. Our measurements for a wide array of conducting and insulating spacecraft materials have been incorporated into the SEE Charge Collector Knowledge-base as a Database of Electronic Properties of Materials Applicable to Spacecraft Charging. This Database provides an extensive compilation of electronic properties, together with parameterization of these properties in a format that can be easily used with existing spacecraft charging engineering tools and with next generation plasma, charging, and radiation models. Tabulated properties in the Database include: electron-induced secondary electron yield, backscattered yield and emitted electron spectra; He, Ar and Xe ion-induced electron yields and emitted electron spectra; photoyield and solar emittance spectra; and materials characterization including reflectivity, dielectric constant, resistivity, arcing, optical microscopy images, scanning electron micrographs, scanning tunneling microscopy images, and Auger electron spectra. Further details of the instrumentation used for insulator measurements and representative measurements of insulating spacecraft materials are provided in other Spacecraft Charging Conference presentations. The NASA Space Environments and Effects Program, the Air Force Office of Scientific Research, the Boeing Corporation, NASA Graduate Research Fellowships, and the NASA Rocky Mountain Space Grant Consortium have provided support.

Dennison, J. R.↗
NASA NTRS1980

Opto-electronic properties of cells made from various silicon forms

Opto-electronic properties of the various silicon forms were obtained from the solar cell performance. Performance parameters included the photovoltaic characteristics, minority carrier diffusion length, spectral response and small light spot scanning. Self consistent results were obtained from the various measurement techniques, which can provide useful information on sheet quality, as a potential for low cost terrestrial applications, and areas where the sheet formation methods can be improved.

Yoo, H.↗
NASA NTRS1998

Substrate Effects on Electronic Properties of Atomic Chains

Atomic chains, precise structures of adatoms created on an atomically regulated surface, are candidates for constituent elements in future electronics. It was predicted that Si chains were metallic and Mg chains were semiconducting, and a doping method was also discussed. The substrate was assumed to work as a non-interacting template holding the adatoms. However, this scheme requires a low-temperature environment so that the adatoms will not displace from their ideal positions due to unwanted thermal agitation. For better structural stability, we may seek a scheme to allow the adatoms to form chemical bonding with the substrate atoms and secure their positions. The chemical bonding has two major effects on the chain electronic properties. First, only the remaining s and p orbitals in an adatom not used for the chemical bonding can decide chain band structures, rather than the full set of orbitals previously assumed. Second, because of a possible HOMO energy difference between adatom and substrate atom, semiconducting chains are unintentionally doped. These effects are studied with a self-consistent tight-binding method with universal parameters. With one adatom per unit cell, adatom chains are semiconducting: (1) if adatoms are of group III and form one chemical bond per adatom, or (2) if adatoms are of group IV and form two chemical bonds. 'Me previous result [I I of realizing semiconducting chains by group II adatoms without chemical bonds is consistent with this picture. When the HOMO energy in an adatom is shallower than that in a substrate atom, the entire chain is positively polarized, unintentionally achieving p-type doping. When deeper, the chain is negatively charged, achieving n-type doping.

Yamada, Toshishige↗
NASA NTRS1995

Electronic properties of Y-Ba-Cu-O superconductors as seen by Cu and O NMR/NQR

Nuclear Magnetic Resonance (NMR) and Nuclear Quadrupole Resonance (NQR) allow the investigation of electronic properties at the atomic level. We will report on such studies of typical members of the the Y-Ba-Cu-O family such as YBa2Cu30(6 + x) (1-2-3-(6 + x)), YBa2Cu4O8 (1-2-4) and Y2Ba4Cu7015 (2-4-7) with many examples of recent work performed in our laboratory. In particular, we will deal with Knight shift and relaxation studies of copper and oxygen. We will discuss important issues of current studies such as: (1) Existence of a common electronic spin-susceptibility in the planes (and perhaps in the chains) of 1-2-4; (2) Strong evidence for the existence of a pseudo spin-gap of the antiferromagnetic fluctuations in 1-2-4 and 2-4-7; (3) Evidence for d-wave pairing in 1-2-4; (4) Strong coupling of inequivalent Cu-O planes in 2-4-7 and possible origin for the high Tc value of this compound; and (5) The possibility to describe NMR data in the framework of a charge-excitation picture.

Brinkmann, D.↗
NASA NTRS1984

Electronic properties of carbon fibers intercalated with copper chloride

Copper chloride intercalated pitch-based carbon fibers are found to have electrical resistivities as low as 12.9 micro-ohm-cm, and are air- and thermally-stable at and above room temperature. This is therefore a good candidate system for conductor application. In addition, Shubnikov-deHaas quantum oscillatory effects were found, and electronic properties of the intercalated fiber are studied using magnetic fields to 20 tesla.

Oshima, H.↗
NASA NTRS1990

Linear prediction filter analysis of relativistic electron properties at 6.6 R(E)

The relationship between relativistic electron flux variations at 6.6 R(E) and various published indices and solar wind properties is studied. An attempt is made to characterize the temporal and dimensional relationships between solar wind or magnetic indices and electron flux enhancements. It is shown that the solar wind speed upstream of the earth's magnetosphere is correlated with large increases in the flux of highly relativistic electrons at geostationary orbit.

Baker, D. N.↗
NASA NTRS1988

Investigations on the usefulness of the Massively Parallel Processor for study of electronic properties of atomic and condensed matter systems

The usefulness of the Massively Parallel Processor (MPP) for investigation of electronic structures and hyperfine properties of atomic and condensed matter systems was explored. The major effort was directed towards the preparation of algorithms for parallelization of the computational procedure being used on serial computers for electronic structure calculations in condensed matter systems. Detailed descriptions of investigations and results are reported, including MPP adaptation of self-consistent charge extended Hueckel (SCCEH) procedure, MPP adaptation of the first-principles Hartree-Fock cluster procedure for electronic structures of large molecules and solid state systems, and MPP adaptation of the many-body procedure for atomic systems.

Das, T. P.↗
NASA NTRS2011

Deducing Electron Properties from Hard X-Ray Observations

X-radiation from energetic electrons is the prime diagnostic of flare-accelerated electrons. The observed X-ray flux (and polarization state) is fundamentally a convolution of the cross-section for the hard X-ray emission process(es) in question with the electron distribution function, which is in turn a function of energy, direction, spatial location and time. To address the problems of particle propagation and acceleration one needs to infer as much information as possible on this electron distribution function, through a deconvolution of this fundamental relationship. This review presents recent progress toward this goal using spectroscopic, imaging and polarization measurements, primarily from the Reuven Ramaty High Energy Solar Spectroscopic Imager (RHESSI). Previous conclusions regarding the energy, angular (pitch angle) and spatial distributions of energetic electrons in solar flares are critically reviewed. We discuss the role and the observational evidence of several radiation processes: free-free electron-ion, free-free electron-electron, free-bound electron-ion, photoelectric absorption and Compton backscatter (albedo), using both spectroscopic and imaging techniques. This unprecedented quality of data allows for the first time inference of the angular distributions of the X-ray-emitting electrons and improved model-independent inference of electron energy spectra and emission measures of thermal plasma. Moreover, imaging spectroscopy has revealed hitherto unknown details of solar flare morphology and detailed spectroscopy of coronal, footpoint and extended sources in flaring regions. Additional attempts to measure hard X-ray polarization were not sufficient to put constraints on the degree of anisotropy of electrons, but point to the importance of obtaining good quality polarization data in the future.

Kontar, E. P.↗
NASA NTRS1987

HgCdTe versus HgZnTe - Electronic properties and vacancy formation energies

The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. The electron mobility was calculated in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg(0.7)Cd(03)Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.

Berding, M. A.↗
NASA NTRS1992

Further improvements in program to calculate electronic properties of narrow band gap materials

The tasks that we have accomplished are discussed. An extra task was a calculation comparing electron mobilities in Mercury Manganese Telluride with Mercury Cadmium Telluride given in 1H. We then list the reports and papers produced and follow that with either abstracts or the papers themselves. In one key paper we obtain good results between experiment and theory in Mercury Zinc Telluride and also find it typically has mobilities competitive with Mercury Cadmium Telluride. In the Appendix we have a relatively complete set of references.

Patterson, James D.↗
NASA NTRS1983

The Correlation of Structural, Chemical, and Electronic Properties of Small Metal Particles and Their Alloys

The low pressure interaction of CO with small Ru particles supported on ultrahigh vacuum (UHV) cleaved mica was studied using flash thermal desorption, Auger electron microscopy, transmission electron microscopy, and transmission electron diffraction. Average particle sizes for these experiments varied between 1.2 and 16 nm. A careful search for CO decomposition on the Ru particles revealed no evidence of dissociaiton over a temperature range and pressure range of 300 to 550 C and 10 to the minus 11th power to 10 to the minus 6th millibar, respectively. Cas and heat treatments caused significant morphological changes and dispersion in the Ru particles, which affected CO desorptiom These effects were dependent on the particle size.

Source record↗
NASA NTRS1987

Improving the method of calculating electronic properties of narrow bandgap semiconductors

A previously developed code for calculating the mobility of charge carriers in narrow bandgap semiconductors does not predict the correct temperature dependence in all cases. It is thought that this is due to the way the electronic screening of the carriers is treated in the model. The objective of this research is to improve the handling of the screening by going beyond the current first Born approximation. Much of this work is directly related to the alloy semiconductor Hg sub 1-xCd sub xTe which is important for infrared detectors and is a good candidate for microgravity crystal growth. The principal conclusion, so far, is that the major difficulty is probably the treatment of short range screening at higher temperatures.

Patterson, James D.↗
NASA NTRS1975

Surface structure and electronic properties of materials

A surface potential model is developed to explain dopant effects on chemical vapor deposition. Auger analysis of the interaction between allotropic forms of carbon and silicon films has shown Si-C formation for all forms by glassy carbon. LEED intensity measurements have been used to determine the mean square displacement of surface atoms of silicon single crystals, and electron loss spectroscopy has shown the effect of structure and impurities on surface states located within the band gap. A thin film of Al has been used to enhance film crystallinity at low temperature.

Siekhaus, W. J.↗
NASA NTRS1989

Analysis of suprathermal electron properties at the magnetic pile-up boundary of Comet P/Halley

Among the plasma discontinuities detected by the Giotto spacecraft around Comet P/Halley, the magnetic pile-up boundary, located at about 135,000 km from the nucleus, has a sharpness which was not foreseen by theoretical models. At this boundary, which marks the beginning of the region where the field lines draped around the nucleus have been piled up, the magnetic field jumps sharply. Electron measurements provided by the RPA experiment show that a clear plasma discontinuity coincides with this magnetic feature. Significant changes occur here in the suprathermal electron distribution function. A magneto-plasma sheet is clearly defined after the boundary. Inside this sheet, close correlations exist between the parameters describing the magnetic field and the electron population. The polytropic equation of state governing the suprathermal electrons in the sheet has been deduced from RPA measurements. Some implications of this law are discussed.

Mazelle, C.↗
NASA NTRS1998

Substrate Effects on Electronic Properties of Atomic Chains

When the device size is reduced down to 0.07 micrometers, the number of dopant atoms in the channel will no longer be macroscopic, typically less than a hundred. A spatial distribution of these dopant atoms will fluctuate statistically from device to device even in identically designed devices, and this places a serious limitation for integration. It is, however, impractical to control dopant positions within atomic dimension. One fundamental solution to this problem is to create electronics with atomically precise, but preferably simple structures. Atomic chains, precise structures of adatoms created on an atomically regulated surface, are candidates for constituent components in future electronics. All the adatoms will be placed at designated positions on the substrate, and all the device structures will be precise, free from any deviations. It was predicted using the tight-binding calculation with universal parameters that silicon chains were metallic and magnesium chains were semiconducting regardless of the lattice spacing, and a possible doping method was also proposed. In these treatments, the substrate was assumed to serve as a non-interacting template holding the adatoms without a formation of chemical bonding with substrate atoms. However, this scheme may not be easy to implement experimentally. Adatoms will have to be fixed with a van der Waals force on the substrate, but the force is generally weak and an extremely low temperature environment has to be prepared to suppress their unwanted thermal displacement. It may be logical to seek a scheme to allow the adatoms to form chemical bonding with the substrate atoms and secure their positions. The substrate effects are studied in detail.

Yamada, Toshishige↗