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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

Jet Fuel Thermal Stability Investigations Using Ellipsometry

Jet fuels are typically used for endothermic cooling in practical engines where their thermal stability is very important. In this work the thermal stability of Sasol IPK (a synthetic jet fuel) with varying levels of naphthalene has been studied on stainless steel substrates using spectroscopic ellipsometry in the temperature range 385-400 K. Ellipsometry is an optical technique that measures the changes in a light beam’s polarization and intensity after it reflects off of a thin film to determine the film’s thickness and optical properties. All of the tubes used were rated as thermally unstable by the color standard portion of the Jet Fuel Thermal Oxidation Test, and this was confirmed by the deposit thicknesses observed using ellipsometry. A new amorphous model on a stainless steel substrate was used to model the data and obtain the results. It was observed that, as would be expected, increasing the temperature of the tube increased the overall deposit amount for a constant concentration of naphthalene. The repeatability of these measurements was assessed using multiple trials of the same fuel at 385 K. Lastly, the effect of increasing the naphthalene concentration in the fuel at a constant temperature was found to increase the deposit thickness.In conclusion, ellipsometry was used to investigate the thermal stability of jet fuels on stainless steel substrate. The effects of increasing temperature and addition of naphthalene on stainless steel tubes with Sasol IPK fuel were investigated. It was found, as expected, that increasing temperature lead to an increase in deposit thickness. It wasAmerican Institute of Aeronautics and Astronautics6also found that increasing amounts of naphthalene increased the maximum deposit thickness. The repeatability of these measurements was investigated using multiple tests at the same conditions. The present work provides as a better quantitative tool compared to the widely used JFTOT technique. Future work will expand on the fuel types, temperature, and substrate materials.

thermal stability↗
NASA NTRS1995

Spectroscopic ellipsometry as a sensitive monitor of materials contamination

Spectroscopic ellipsometry is demonstrated to be extremely sensitive to contamination layers in the thickness range from 0.1 nm to 10 microns. In the present experiments we deposit either a thin lubricating oil (WD-40) or mineral oil continuously onto Ir, Cu, Al, Au, and V substrates from a bubbler, and monitor its thickness growth from sub-nanometer to tens of nanometers as a function of time. Re-evaporation of contaminant oils is also monitored in real-time by ellipsometry.

Hale, Jeffrey S.↗
NASA NTRS2006

Modeling Ellipsometry Measurements of Molecular Thin-Film Contamination on Genesis Array Samples

The discovery of a molecular thin-film contamination on Genesis flown array samples changed the course of preliminary assessment strategies. Analytical techniques developed to measure solar wind elemental abundances must now compensate for a thin-film contamination. Currently, this is done either by experimental cleaning before analyses or by depth-profiling techniques that bypass the surface contamination. Inside Johnson Space Center s Genesis dedicated ISO Class 4 (Class 10) cleanroom laboratory, the selection of collector array fragments allocated for solar wind analyses are based on the documentation of overall surface quality, visible surface particle contamination greater than 1 m, and the amount of thin film contamination measured by spectroscopic ellipsometry. Documenting the exact thickness, surface topography, and chemical composition of these contaminates is also critical for developing accurate cleaning methods. However, the first step in characterization of the molecular film is to develop accurate ellipsometry models that will determine an accurate thickness measurement of the contamination film.

Calaway, Michael J.↗
NASA NTRS2017

Jet Fuel Thermal Stability Investigations using Ellipsometry

Ellipsometry is an optical technique used to measure the thickness of thin films. This technique was used to measure the thickness of deposits created by heated jet fuel, specifically Sasol IPK on stainless steel tubes. A new amorphous model was used to iteratively determine the film thickness. This method was found to be repeatable, and the thickness of deposit increased with increasing temperature and increasing concentration of naphthalene.

aviation fuel↗
NASA NTRS1986

Variable angle of incidence spectroscopic ellipsometry Application to GaAs-Al(x)Ga(1-x)As multiple heterostructures

The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-Al(x)Ga(1-x)As-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples.

Snyder, Paul G.↗
NASA NTRS1988

Variable angle spectroscopic ellipsometry - Application to GaAs-AlGaAs multilayer homogeneity characterization

Variable angle spectroscopic ellipsometry has been applied to a GaAs-AlGaAs multilayer structure to obtain a three-dimensional characterization, using repetitive measurements at several spots on the same sample. The reproducibility of the layer thickness measurements is of order 10 A, while the lateral dimension is limited by beam diameter, presently of order 1 mm. Thus, the three-dimensional result mainly gives the sample homogeneity. In the present case three spots were used to scan the homogeneity over 1 in of a wafer which had molecular-beam epitaxially grown layers. The thickness of the AlGaAs, GaAs, and oxide layers and the Al concentration varied by 1 percent or less from edge to edge. This result was confirmed by two methods of data analysis. No evidence of an interfacial layer was observed on top of the AlGaAs.

Alterovitz, Samuel A.↗
NASA NTRS1988

Thin-film hermeticity - A quantitative analysis of diamondlike carbon using variable angle spectroscopic ellipsometry

This paper reports on the successful application of variable-angle spectroscopic ellipsometry to quantitative thin-film hermeticity evaluation. It is shown that, under a variety of film preparations and moisture introduction conditions, water penetrates only a very thin diamondlike carbon (DLC) top surface-roughness region. Thus, DLC is an excellent candidate for use as protective coatings in adverse chemical and aqueous environments.

Orzeszko, S.↗
NASA NTRS1989

Characterization of multilayer GaAs/AlGaAs transistor structures by variable angle spectroscopic ellipsometry

Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 'barrier' and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.

Merkel, Kenneth G.↗
NASA NTRS1991

Study of InGaAs based MODFET structures using variable angle spectroscopic ellipsometry

Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs based MODFET structures. Strained and unstrained InGaAs channels were made by MBE on InP substrates and by MOCVD on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth calibration results. The MBE made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice matched concentration.

Alterovitz, S. A.↗
NASA NTRS1992

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical point of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, Samuel A.↗
NASA NTRS1992

Atomic oxygen effects on thin film space coatings studied by spectroscopic ellipsometry, atomic force microscopy, and laser light scattering

The University of Nebraska is currently evaluating Low Earth Orbit (LEO) simulation techniques as well as a variety of thin film protective coatings to withstand atomic oxygen (AO) degradation. Both oxygen plasma ashers and an electron cyclotron resonance (ECR) source are being used for LEO simulation. Thin film coatings are characterized by optical techniques including Variable Angle Spectroscopic Ellipsometry, Optical spectrophotometry, and laser light scatterometry. Atomic Force Microscopy (AFM) is also used to characterize surface morphology. Results on diamondlike carbon (DLC) films show that DLC degrades with simulated AO exposure at a rate comparable to Kapton polyimide. Since DLC is not as susceptible to environmental factors such as moisture absorption, it could potentially provide more accurate measurements of AO fluence on short space flights.

Synowicki, R. A.↗
NASA NTRS1990

Study of temperature-dependent ultrathin oxide growth on Si(111) using variable-angle spectroscopic ellipsometry

The monolayer-sensitive variable-angle spectroscopic ellipsometry technique was used to study the temperature-dependent growth mechanisms of an ultrathin oxide layer on top of silicon. The oxidation was done in atomic oxygen produced in a pure oxygen plasma and driven by an RF power source. The results have been compared with the recently proposed model of Murali and Murarka for ultrathin oxide growth on top of silicon. The activation energies of different growth parameters associated with the oxide growth have also been determined.

De, Bhola N.↗
NASA NTRS1993

Spectroscopic ellipsometry studies of HF treated Si (100) surfaces

Both ex situ and in situ spectroscopic ellipsometry (SE) measurements were employed to investigate the effect of HF cleaning on Si surfaces. The hydrogen-terminated (H-terminated) Si surface was modeled as an equivalent dielectric layer, and monitored in real time by SE measurements. The SE analyses indicate that, after a 20-sec 9:1 HF dip without rinse, the Si (100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si (100) surface was observed, in an ultrahigh vacuum chamber (UHV), and analyzed by the in situ SE. Evidence for desorption of the H-terminated Si surface layer, after being heated to about 550 C in the UHV chamber, is presented and discussed. This is the first use of an ex situ and in situ real-time, nondestructive technique capable of showing state of passivation, the rate of reoxidation, and the surface roughness of the H-terminated Si surfaces.

Yao, Huade↗
NASA NTRS1993

Spectroscopic ellipsometry studies of HF treated Si (100) surfaces

Both ex situ and in situ spectroscopic ellipsometry (SE) measurements were employed to investigate the effects of HF cleaning on Si surfaces. The hydrogen-terminated (H-terminated) Si surface was modeled as an equivalent dielectric layer, and monitored in real time by SE measurements. The SE analyses indicate that after a 20-s 9:1 HF dip without rinse, the Si(100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si(100) surface was observed, in an ultrahigh vacuum (UHV) chamber, and analyzed by the in situ SE. Evidence for desorption of the H-terminated Si surface-layer, after being heated to approximately 550 C in the UHV chamber, is presented and discussed. This is the first use of an ex situ and in situ real-time, nondestructive technique capable of showing state of passivation, the rate of reoxidation, and the surface roughness of the H-terminated Si surfaces.

Yao, Huade↗