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DOE OSTI2015

Dielectric properties of inorganic fillers filled epoxy thin film

The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe{sub 2}O{sub 3}) and Titanium Dioxide (TiO{sub 2}) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types of fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.

36 MATERIALS SCIENCE↗

DOE OSTI2014

High energy storage capacitor by embedding tunneling nano-structures

In an All-Electron Battery (AEB), inclusions embedded in an active region between two electrodes of a capacitor provide enhanced energy storage. Electrons can tunnel to/from and/or between the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. One or more barrier layers is present in an AEB to block DC current flow through the device. The AEB effect can be enhanced by using multi-layer active regions having inclusion layers with the inclusions separated by spacer layers that don't have the inclusions. The use of cylindrical geometry or wrap around electrodes and/or barrier layers in a planar geometry can enhance the basic AEB effect. Other physical effects that can be employed in connection with the AEB effect are excited state energy storage, and formation of a Bose-Einstein condensate (BEC).

25 ENERGY STORAGE↗

DOE OSTI2024

2D material platform for overcoming the amplitude–phase tradeoff in ring resonators

Compact and high-speed electro-optic phase modulators play a vital role in various large-scale applications including optical computing, quantum and neural networks, and optical communication links. Conventional electro-refractive phase modulators such as silicon (Si), III-V and graphene on Si suffer from a fundamental tradeoff between device length and optical loss that limits their scaling capabilities. High-finesse ring resonators have been traditionally used as compact intensity modulators, but their use for phase modulation has been limited due to the high insertion loss associated with the phase shift. Here, we show that high-finesse resonators can achieve a strong phase shift with low insertion loss by simultaneous modulation of the real and imaginary parts of the refractive index, to the same extent, i.e., Δ n Δ k ∼1. To implement this strategy, we demonstrate an active hybrid platform that combines a low-loss SiN ring resonator with 2D materials such as graphene and transition metal dichalcogenide [tungsten disulphide (WSe 2 )], which induces a strong change in the imaginary and real parts of the index. Our platform consisting of a 25 µm long Gr-Al 2 O 3 -WSe 2 capacitor embedded on a SiN ring of 50 µm radius (∼8% ring coverage) achieves a continuous phase shift of (0.46±0.05) π radians with an insertion loss (IL) of 3.18±0.20 dB and a transmission modulation (Δ T Ring ) of 1.72±0.15dB at a probe wavelength ( λ p ) of 1646.18 nm. We find that our Gr-Al 2 O 3 -WSe 2 capacitor exhibits a phase modulation efficiency ( V π 2 ⋅ L ) of 0.530±0.016V⋅cm and can support an electro-optic bandwidth of 14.9±0.1GHz. We further show that our platform can achieve a phase shift of π radians with an IL of 5 dB and a minimum Δ T of 0.046 dB. We demonstrate the broadband nature of the binary phase response, by measuring a phase shift of (1.00±0.10) π radians, with an IL of 5.20±0.31dB and a minimal Δ T Ring of 0.015±0.006dB for resonances spanning from 1564 to 1650 nm. This SiN–2D hybrid platform provides the design for compact and high-speed reconfigurable circuits with graphene and transition metal dichalcogenide (TMD) monolayers that can enable large-scale photonic systems.

Datta, Ipshita (ORCID:0000000318842882)↗

DOE OSTI2014

Mechanical confinement for improved energy storage density in BNT-BT-KNN lead-free ceramic capacitors

With the advent of modern power electronics, embedded circuits and non-conventional energy harvesting, the need for high performance capacitors is bound to become indispensible. The current state-of-art employs ferroelectric ceramics and linear dielectrics for solid state capacitance. However, lead-free ferroelectric ceramics propose to offer significant improvement in the field of electrical energy storage owing to their high discharge efficiency and energy storage density. In this regards, the authors have investigated the effects of compressive stress as a means of improving the energy storage density of lead-free ferroelectric ceramics. The energy storage density of 0.91(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-0.07BaTiO{sub 3}-0.02(K{sub 0.5}Na{sub 0.5})NbO{sub 3} ferroelectric bulk ceramic was analyzed as a function of varying levels of compressive stress and operational temperature .It was observed that a peak energy density of 387 mJ.cm{sup -3} was obtained at 100 MPa applied stress (25{sup o}C). While a maximum energy density of 568 mJ.cm{sup -3} was obtained for the same stress at 80{sup o}C. These values are indicative of a significant, 25% and 84%, improvement in the value of stored energy compared to an unloaded material. Additionally, material's discharge efficiency has also been discussed as a function of operational parameters. The observed phenomenon has been explained on the basis of field induced structural transition and competitive domain switching theory.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO{sub 2} high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfO{sub x} film

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfO{sub x} film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfO{sub x} matrix. Pt/Ni-NCs embedded HfO{sub x}/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 10{sup 12} electrons/cm{sup 2}, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 10{sup 4} cycles and excellent retention performance of 10{sup 5} s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metal–oxide–semiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2017

Method of making dielectric capacitors with increased dielectric breakdown strength

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Miniature lowpass filters in low loss 9k7 LTCC

DuPont 9k7 low temperature cofired ceramic (LTCC) is a low loss, or high quality factor Q, tape system targeting at radio frequency (RF) applications. This paper reports the effect of a critical process parameter, heating rate, on the densification and dielectric properties of the 9k7 LTCC. The role of competing densification and crystallization during the sintering of 9k7 is discussed. The high Q of DuPont 9K7 can be used to improve RF system performance, for example a better receiver noise figure, by designing embedded passive RF components such as inductors, capacitors and filters. As a result, miniaturized multilayer low pass filters (LPF) with a wide stopband were fabricated to showcase the technology.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Miniature low-pass filter in low-loss 9k7 LTCC

DuPont 9k7 low-temperature cofired ceramic (LTCC) is a low-loss, or high-quality-factor Q, tape system targeting at radio frequency (RF) applications. This paper reports on the effect of a critical process parameter, the heating rate, on the densification and dielectric properties of the 9k7 LTCC. The role of competing densification and crystallization during the sintering of 9k7 is discussed. The high Q of DuPont 9K7 can be used to improve RF system performance, for example a better receiver noise figure, by designing embedded passive RF components such as inductors, capacitors and filters. Furthermore, miniaturized multilayer low-pass filters (LPF) with a wide stopband were fabricated to showcase the technology.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Ferroelectricity in undoped hafnium oxide

We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10 μC cm{sup −2} as well as a read/write endurance of 1.6 × 10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Effect of organic electroactive crystallites in a dielectric matrix on the electrical properties of a polymer dielectric

In this work, the effects of inserting chargeable α-quaterthiophene (α4T) crystallites in polystyrene (PS) multilayers used as a transistor gate and capacitor dielectric were investigated. X-ray diffraction (XRD), scanning electron microscopy with energy dispersive x-ray spectroscopy (SEM/EDS), and confocal microscopy indicated the formation of α4T crystallites in the PS matrix. A modified saturation-regime current voltage relationship was used to estimate organic field-effect transistor (OFET) threshold voltage V TH shifting, and in turn the quantities of stored charge that were observed as a result of dielectric charging. The crystallites increased the maximum charge storage capacity as well as the charge retention capability of the dielectrics. Kelvin probe force microscopy (KPFM) showed that charges were localized near the α4T crystallites upon charging. Trilayer experiments validated the charge retention improvement of α4T crystallite-embedded PS dielectrics. The crystallites also improved breakdown characteristics in PS used as a capacitor dielectric, suggesting their application to storage capacitors in addition to OFET logic.

25 ENERGY STORAGE↗

DOE OSTI2020

Optimal sensor network design for multi-scale, time-varying differential algebraic equation systems: Application to an entrained-flow gasifier refractory brick

An algorithm for optimal sensor network design for multi-scale, time-varying differential algebraic equation systems with non-separable dynamics is presented. As the process is time-varying, an integral normalized posterior error covariance of a multi-scale filter is minimized to obtain the optimal sensor locations. For reducing the computational cost, an adaptive sampling rate approach is considered for the slowly-varying variables. The algorithm is applied to a smart refractory brick with embedded sensors as part of an entrained-flow gasifier. Thermistors and interdigital capacitors are considered as candidate measurement technologies for estimating temperature and slag penetration profile along the gasifier wall. Finally, when the optimal set of sensors obtained from the algorithm is used for estimating temperature and slag penetration profiles in a multi-scale Kalman filter framework, satisfactory estimates are obtained despite high measurement noise and model mismatch.

42 ENGINEERING↗

DOE OSTI2024

Direct Power Control of Back to Back Modular Multilevel Converter with Advanced Grid Support Functions for Grid Forming Application

Possibility of using back-to-back modular multilevel converter system with a direct power control architecture has been investigated in this paper. The rectifier side is controlled to be in grid following mode whereas the inverter side is controlled in grid forming mode. Both the sides’ local controllers use Lyapunov energy function based architecture to accomplish the objective of active and reactive power control as well as maintaining a fixed user defined voltage over the dc bus on the rectifier side. Therefore, the proposed direct power control architecture has embedded dc bus control architecture to maintain fixed user defined value of the capacitors. Similar architecture is implemented on the inverter side to accomplish either voltage control during grid forming or power control during grid following. Advanced grid support functionalities based on IEEE-1547-2018 is implemented and utilized to generate the reference values for either the rectifier or the inverter sides. The overall system is modeled based on MATLAB/Simulink and PLECS domain and various important case studies to verify the efficacy of the overall system has been presented.

direct power control (DPC)↗

DOE OSTI2014

Layer-by-layer charging in non-volatile memory devices using embedded sub-2 nm platinum nanoparticles

In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle (PtNP) floating gate devices with defined gate voltage bias ranges. The device consists of two layers of ultra-fine, sub-2 nm PtNPs integrated between Al{sub 2}O{sub 3} tunneling and separation layers. PtNP size and interparticle distance were varied to control the particle self-capacitance and associated Coulomb charging energy. Likewise, the tunneling layer thicknesses were also varied to control electron tunneling to the first and second PtNP layers. The final device configuration with optimal charging behavior and multi-level programming was attained with a 3 nm Al{sub 2}O{sub 3} initial tunneling layer, initial PtNP layer with particle size 0.54 ± 0.12 nm and interparticle distance 4.65 ± 2.09 nm, 3 nm Al{sub 2}O{sub 3} layer to separate the PtNP layers, and second particle layer with 1.11 ± 0.28 nm PtNP size and interparticle distance 2.75 ± 1.05 nm. In this device, the memory window of the first PtNP layer saturated over a programming bias range of 7 V to 14 V, after which the second PtNP layer starts charging, exhibiting a multi-step memory window with layer-by-layer charging.

36 MATERIALS SCIENCE↗

DOE OSTI2022

The ultrafast pixel array camera system and its applications in high energy density physics

Diagnostics in high energy density physics, shock physics, and related fields are primarily driven by a need to record rapidly time-evolving signals in single-shot events. These measurements are often limited by channel count and signal degradation issues on cable links between the detector and digitizer. Here we present the Ultrafast Pixel Array Camera (UPAC), a compact and flexible detector readout system with 32 waveform-recording channels at up to 10 Gsample/s and 1.8 GHz analog bandwidth. The compact footprint allows the UPAC to be directly embedded in the detector environment. A key enabling technology is the PSEC4A chip, an eight-channel switch-capacitor array sampling device with up to 1056 samples/channel. The UPAC system includes a high-density input connector that can plug directly into an application-specific detector board, programmable control, and serial readout, with less than 5 W of power consumption in full operation. We present the UPAC design and characterization, including a measured timing resolution of ~20 ps or better on acquisitions of sub-nanosecond pulses with minimal system calibrations. Example applications of the UPAC are also shown to demonstrate operation of a solid-state streak camera, an ultrafast imaging array, and a neutron time-of-flight spectrometer.

47 OTHER INSTRUMENTATION↗

DOE OSTI2014

UNIVERSAL AUTO-CALIBRATION FOR A RAPID BATTERY IMPEDANCE SPECTRUM MEASUREMENT DEVICE

Electrochemical impedance spectroscopy has been shown to be a valuable tool for diagnostics and prognostics of energy storage devices such as batteries and ultra-capacitors. Although measurements have been typically confined to laboratory environments, rapid impedance spectrum measurement techniques have been developed for on-line, embedded applications as well. The prototype hardware for the rapid technique has been validated using lithium-ion batteries, but issues with calibration had also been identified. A new, universal automatic calibration technique was developed to address the identified issues while also enabling a more simplified approach. A single, broad-frequency range is used to calibrate the system and then scaled to the actual range and conditions used when measuring a device under test. The range used for calibration must be broad relative to the expected measurement conditions for the scaling to be successful. Validation studies were performed by comparing the universal calibration approach with data acquired from targeted calibration ranges based on the expected range of performance for the device under test. First, a mid-level shunt range was used for calibration and used to measure devices with lower and higher impedance. Next, a high excitation current level was used for calibration, followed by measurements using lower currents. Finally, calibration was performed over a wide frequency range and used to measure test articles with a lower set of frequencies. In all cases, the universal calibration approach compared very well with results acquired following a targeted calibration. Additionally, the shunts used for the automated calibration technique were successfully characterized such that the rapid impedance measurements compare very well with laboratory-scale measurements. These data indicate that the universal approach can be successfully used for onboard rapid impedance spectra measurements for a broad set of test devices and range of measurement conditions.

99 GENERAL AND MISCELLANEOUS↗

DOE OSTI2013

Electrohydraulic Forming of Near-Net Shape Automotive Panels

The objective of this project was to develop the electrohydraulic forming (EHF) process as a near-net shape automotive panel manufacturing technology that simultaneously reduces the energy embedded in vehicles and the energy consumed while producing automotive structures. Pulsed pressure is created via a shockwave generated by the discharge of high voltage capacitors through a pair of electrodes in a liquid-filled chamber. The shockwave in the liquid initiated by the expansion of the plasma channel formed between two electrodes propagates towards the blank and causes the blank to be deformed into a one-sided die cavity. The numerical model of the EHF process was validated experimentally and was successfully applied to the design of the electrode system and to a multi-electrode EHF chamber for full scale validation of the process. The numerical model was able to predict stresses in the dies during pulsed forming and was validated by the experimental study of the die insert failure mode for corner filling operations. The electrohydraulic forming process and its major subsystems, including durable electrodes, an EHF chamber, a water/air management system, a pulse generator and integrated process controls, were validated to be capable to operate in a fully automated, computer controlled mode for forming of a portion of a full-scale sheet metal component in laboratory conditions. Additionally, the novel processes of electrohydraulic trimming and electrohydraulic calibration were demonstrated at a reduced-scale component level. Furthermore, a hybrid process combining conventional stamping with EHF was demonstrated as a laboratory process for a full-scale automotive panel formed out of AHSS material. The economic feasibility of the developed EHF processes was defined by developing a cost model of the EHF process in comparison to the conventional stamping process.

36 MATERIALS SCIENCE↗