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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Digital atomic scale fabrication an inverse Moore's Law – A path to atomically precise manufacturing

There is an exciting opportunity to start a second digital revolution that will supersede the first digital revolution in information technology (IT) as the primary driver of scientific, technological, and economic growth. This new revolution will be digital fabrication technology. Here, the digital IT revolution has been largely driven by digital algorithms such as error detection and correction and Moore's Law which has given us an exponential trend in product capabilities. However, the longstanding trend in improving manufacturing precision which has enabled Moore's Law simply cannot be continued much longer because we are running into the limits imposed by the quantized nature of matter. At this scale, matter can no longer be treated in an analogue fashion i.e. as an infinitely divisible medium, but must be treated as an integer number of discrete atomic distances, i.e. in a digital fashion. By embracing this digital nature of matter, we can conceive of a digital fabrication technology, where the digital processes are the making and breaking of chemical bonds, there is a digital address grid that is spatial in nature, and error detection and correction processes can be developed. This digital fabrication technology will have the similarly huge advantages over analog fabrication that digital IT has over analog IT. We remind the reader that effective digital technologies are not exclusively digital in their operation. Digital electronics is carried out by analog transistors that are embedded in circuitry designed to accept their output in a digital fashion. Digital fabrication technology is not synonymous with Atomically Precise Manufacturing (APM) but should lead to that important capability. Furthermore this digital fabrication technology will start a new exponential manufacturing trend that will replace Moore's law and will not be just for information processing and therefore will have an even larger impact than Moore's Law. Like any exponential trend Digital Fabrication will start slowly in a few niche markets, but the time for investing in the development of this new technology is now.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiC MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.

30 DIRECT ENERGY CONVERSION↗

Energy-Harvesting Based Wireless Sensor Using LoRa Protocol

This software can be applied with an integrated wireless sensor node that can sense environmental variables, process the variables, and transmit using the LoRa protocol. The software accompanies an embedded circuit layout that has sensing, processing, and communication circuitry. The software effectively retrieves data from a sensor node, processes them and transmits over the air while conserving on board energy.

Kuruganti, Phani Teja V↗

Conductive Liquid Metal Vitrimer Composites for Reconfigurable and Recyclable Flexible Electronics

Liquid metal (LM) elastomer composites exhibit excellent functionality for stretchable electronics and wearables, but limited recycling and reuse pathways constrain their sustainable use. Here, to address these challenges amid growing concerns over electronic waste, a conductive LM–vitrimer composite is presented that enables recyclable and reconfigurable electronics. This soft and stretchable composite features uniformly distributed LM inclusions that enhance thermal conductivity by 6.53× and enable the formation of conductive traces with electrical self-healing, while the vitrimer provides structural restoration. The dynamic covalent bonds of the vitrimer matrix are leveraged for both reprocessing the composite and chemically recovering 94% of the LM. This liquid-state filler slightly reduces the vitrimer's stiffness to 2.63 MPa (≈20% lower), while maintaining its high stretchability (>135% strain) and thermal stability. It is further examined how ultrasonicated LM inclusions interact with the vitrimer matrix and demonstrate the composite's self-healing and recyclability through two distinct approaches: 1) thermomechanical reprocessing, which restores fragmented composites under heat and compression for circuit reconfiguration; and 2) chemical recycling, which recovers the embedded LM for reuse in fabricating new composites and redesigned circuitry. With the integration of recyclability and diverse functional capabilities, LM–vitrimer composites emerge as a promising material platform for sustainable, flexible electronics.

Han, Youngshang [Univ. of Washington, Seattle, WA ↗

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A PCB-Embedded 1.2 kV SiC MOSFET Half-Bridge Package for a 22 kW AC–DC Converter

This article presents the design and analysis of a double-side-cooled printed circuit board (PCB) embedded silicon carbide (SiC) MOSFET half-bridge package with low loop inductances and an integrated gate driver. The 1.2 kV SiC MOSFET dies used in the half-bridge package are embedded in the PCB using AT&S's patented technique. The dies are cooled and electrically connected to traces in the PCB through copper-filled microvias. The design methodology accounts for both electrical and thermal performance, limiting the power-loop inductance to 2.3 nH and the maximum package temperature to less than the 175 °C limit. The integration of the gate drive circuitry allows for a high power density and 2.2 nH gate-loop inductances. At 0.12 K/W, the measured junction-to-case thermal resistance with double-sided cooling is 57% lower than that of a TO-247 package. Under similar operating conditions, the PCB-embedded half-bridge package also achieves a 5.6 times lower voltage overshoot and a 0.5% higher peak efficiency than a TO-247-based half-bridge. This article reports the first demonstration of PCB-embedded 1.2 kV SiC MOSFET packages in buck, boost, and ac–dc converters. Furthermore, the prototype three-phase ac–dc converter for an electric vehicle on-board charger is composed of six PCB-embedded half-bridge packages and achieves an efficiency of 98.2% and a power density of 182 W/in 3 .

42 ENGINEERING↗

A graphite oxide (GO)-based remote readable tamper evident seal

Here, this paper presents a prototype of a remotely readable graphite oxide (GO) paper-based tamper evident seal. The proposed device combines the tunable electrical properties offered by reduced graphite oxide (RGO) with a compressive sampling scheme. The benefit of using RGO as a tamper evident seal material is the sensitivity of its electrical properties to the common mechanisms adopted to defeat tamper-evident seals. RGO’s electrical properties vary upon local stress or cracks induced by mechanical action (e.g., produced by shimming or lifting attacks). Further, modification of the seal’s electrical properties can result from the incidence of other defeat mechanisms, such as temperature changes, solvent treatment and steam application. The electrical tunability of RGO enables the engraving of a circuit on the area of the tamper evident seal intended to be exposed to malicious attacks. The operation of the tamper evident seal, as well as its remote communication functionality, is supervised by a microcontroller unit (MCU). The MCU uses the RGO-engraved circuitry to physically implement a compressive sampling acquisition procedure. The compressive sampling scheme provides the seal with self-authentication and self-state-of-health awareness capabilities. Finally, the prototype shows potential for use in low-power, embedded, remote-operation nonproliferation security related applications.

36 MATERIALS SCIENCE↗

A model of spatio-temporal regulation within biomaterials using DNA reaction–diffusion waveguides

In multi-cellular organisms, cells and tissues coordinate biochemical signal propagation across length scales spanning micrometres to metres. Designing synthetic materials with similar capacities for coordinated signal propagation could allow these systems to adaptively regulate themselves across space and over time. Here, we combine ideas from cell signalling and electronic circuitry to propose a biochemical waveguide that transmits information in the form of a concentration of a DNA species on a directed path. The waveguide could be seamlessly integrated into a soft material because there is virtually no difference between the chemical or physical properties of the waveguide and the material it is embedded within. We propose the design of DNA strand displacement reactions to construct the system and, using reaction–diffusion models, identify kinetic and diffusive parameters that enable super-diffusive transport of DNA species via autocatalysis. Finally, to support experimental waveguide implementation, we propose a sink reaction and spatially inhomogeneous DNA concentrations that could mitigate the spurious amplification of an autocatalyst within the waveguide, allowing for controlled waveguide triggering. Chemical waveguides could facilitate the design of synthetic biomaterials with distributed sensing machinery integrated throughout their structure and enable coordinated self-regulating programmes triggered by changing environmental conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Design of digital acquisition for beam current monitor

As a part of the Proton Improvement Plan – II (PIP-II) at Fermilab, instrumentation systems are being modernized to take advantage of the higher speeds and ease of use offered by standardized embedded systems like MicroTCA. A rear-transition module (RTM) is being designed to interface with said embedded systems. In each of the four identical channels on the RTM, the differential signal from an alternating-current current transformer (ACCT) transimpedance amplifier will again be amplified by a differential operation-amplifier, then filtered by a low-pass topology. The conditioned signal is then digitized at a maximum of 10MS/s by an analog to digital converter (ADC) integrated circuit. After digitization, the ADC passes the data to an off the shelf AdvancedMC (AMC) Xilinx FPGA module using low voltage differential signals. This paper will describe the simulation of analog circuitry for signal conditioning, simulation of digital signal integrity based on physical design as well as verification of design characteristics critical to signal integrity. This work aims to create a methodology that can be applied to future RTMs requiring application of high-speed digital design principles.

White, R.Turner [Fermilab]↗

Design of Digital Acquisition for Beam Current Monitor

As a part of the Proton Improvement Plan II (PIP-II) at Fermilab, instrumentation systems are being modernized to take advantage of the higher speeds and ease of use offered by standardized embedded systems like MicroTCA. A rear-transition module (RTM) is being designed to interface with said embedded systems. In each of the four identical channels on the RTM, the differential signal from an alternating-current current transformer (ACCT) transimpedance amplifier will again be amplified by a differential operation-amplifier, then filtered by a low-pass topology. The conditioned signal is then digitized at a maximum of 10MS/s by an analog to digital converter (ADC) integrated circuit. After digitization, the ADC passes the data to an off the shelf AdvancedMC (AMC) Xilinx FPGA module using low voltage differential signals. This paper will describe the simulation of analog circuitry for signal conditioning, simulation of digital signal integrity based on physical design as well as verification of design characteristics critical to signal integrity. This work aims to create a methodology that can be applied to future RTMs requiring application of high-speed digital design principles.

White, Turner [Fermilab] (ORCID:0009000348159256)↗

Metal oxide semiconductor thin-film transistors for flexible electronics

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗