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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Amorphous Indium Oxide Channel FEFETs With Write Voltage of 0.9 V and Endurance >10 12 for Refresh-Free Embedded Memory

This work presents, for the first time, a back-end-of-the-line (BEOL)-compatible W-doped indium oxide (IWO) ferroelectric field-effect transistor (FEFET) with a record-low operating voltage below 0.9 V and a write speed of 20 ns while achieving a transient read current window (CW) ratio ( I LVT /I HVT ) greater than 10 4 . The device also exhibits exceptional reliability characteristics such as: 1) measured bipolar write endurance up to 10 12 cycles; 2) a fast read speed of 50 ns; 3) read endurance surpassing 10 12 cycles; and 4) retention exceeding 10 4 s at 85 ∘ C. Furthermore, a physics-based numerical model has been developed to investigate the nanoscale characteristics of BEOL FEFET devices, leveraging nucleation-limited switching in HfO 2 ferroelectrics and dc characterization to extract material and channel parameters for accurate device simulation. The simulation uncovers the stochastic switching behavior of BEOL amorphous oxide semiconductor (AOS) FEFETs and demonstrates an intrinsic switching time as low as 1 ps, highlighting the potential of BEOL AOS FEFETs for ultrafast memory applications. These results establish AOS FEFETs as a compelling candidate for high-density embedded memory applications for last-level cache (LLC) (L4) in advanced CMOS technology nodes.

1-V ferroelectric field-effect transistor (FEFET)↗
DOE OSTI2025

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing-in-memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field-effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high-conductance state. We show that this device can be set to a low-conductance state by sweeping a negative bias on the device drain, and reset it to its high-conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide-semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group-IV HFETs to perform as analog cryogenic memory components.

cryogenic memory↗
DOE OSTI2025

Phase transition in two-dimensional monolayer (1L)-molybdenum disulfide induced by atomic S-basal plane gliding via synchrotron X-ray monochromatic beam radiation for superior electronic performance

Here, in this work, we report a novel approach to reduce the channel resistance by inducing a phase transition behavior from 2H to 1T in a monolayer MoS 2 (1L-MoS 2 ) by a synchrotron X-ray monochromatic beam (mono-beam) radiation. The effects of the biphase structure by the mono-beam on the 1L-MoS2 film were investigated using Raman spectra, photoluminescence (PL) spectra, scanning tunneling microscopy, and scanning tunneling spectroscopy, respectively. Through material characterization, we identified that the lateral sliding of S-vacancies along the S-plane in the 1L-MoS 2 is the key reason for the origin of unidirectional phase transition. The precise phase engineering triggered by the mono-beam radiation process allows the realization of field-effect transistors (FET) with 2X improvement in mobility toward a high on/off ratio (~10 8 ) and a near-ideal subthreshold swing of ~88 mV per decade. The validity of the phase engineering could be further extended for its application as a memory device, exhibiting a gate tunable conduction modulation behavior and a high resistance ratio of ~10 2 at a gate bias of 5 V with endurance of ~100 cycles. Furthermore, an artificial neural network using the synaptic weight update with accuracy of ~93 % was achieved.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa 2 Cu 3 O x with Excess Cu Addition

Resistive switching technologies have the potential not only to create large efficiency gains in computer memory but also to revolutionize emerging fields such as neuromorphic computing. In this paper, we report on novel resistive switching behavior in devices made from room-temperature-grown Cu-rich amorphous YBa 2 Cu 3 O x (YBCO) films, a material otherwise well-known as a high-temperature superconductor. In Nb:STO substrate/amorphous YBCO film (≈200 nm)/metallic Cu (15 nm)/metallic Pt (15 nm) devices, we demonstrate that the resistive switching can be tuned between mechanisms involving extended areas of the YBCO/electrode interface and a single-point filamentary mechanism simply by changing the Cu content of the deposition target and hence in the films. Changing the Cu content can also be used to optimize the properties of the devices further, with devices with an added 15 mol % of Cu in YBCO initially providing an on/off ratio >100, switching endurance potential >6500 cycles, and state retention >2 × 10 4 s, all at low switching fields of 0.3 MV/cm. The amalgam of promising resistive switching properties, fast growth (150 nm/min) at room temperature, and tuneability of the switching mechanism indicates the strong potential of this proof-of-concept amorphous system for future memory applications.

Cu↗
DOE OSTI2024

Ultrafast high-endurance memory based on sliding ferroelectrics

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 10 11 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.

Science & Technology - Other Topics↗
DOE OSTI2024

The Grain Boundary Relaxation (GBR) Approach for Manufacturing High Strength Nanocrystalline Lightweight Metals

The overarching goal of the project was to conduct research and development work as proposed in the Statement of Project Objective (SOPO) of the award document DE-FE-0009116. The project had 4 tasks and 12 milestones. All the milestone deliverables were completed. The accomplishments of the project objectives and technical discussions are described in Sections 3 and 4, respectively. The modeling and simulation work indicated that to increase the strength and stability of nanocrystalline aluminum (Al), selection of dopants, such as Mg, is necessary. It was predicted that the crystallite size should be less than 50 nm to give high strength. On the basis of modeling, cryo-milling of Al was conducted with the addition of Mg as a function of different times. The crystallite size of the cryo-milled powders was determined by XRD and TEM. Both measurements showed that the actual crystallite size of the grain was <40 nm. The thermal stability of the grain size was established as a function of temperature. It was established that the grain size was < 50 nm up to 500C. The crystallite size of the bulk sample prepared by spark plasma sintering (SPS) and cold spray (CS) additive manufacturing was less than <40 nm. The mechanical properties of the bulk samples prepared by SPS and CS, showed excellent microhardness, good tensile properties (>200 MPa) with moderate ductility and improved fatigue performance. Adding yttria stabilized zirconia (YSZ) improved the build thick of the CS sample, however the YSZ was getting embedded into the sample. A highly dense SPS samples sent for 3rd party testing to the Innovation Testing Services showed a minimum hardness of 180 HV with an average tensile strength of 512.5 MPa. The high cycle fatigue tests also showed an endurance limit of 179.5 MPa. The Energy cost evaluations showed an overall energy cost of around $\$$17.05 for the cryomilling and SPS processes and the total manufacturing cost calculations of $\$$78.14 for 1 kg of sample. The energy cost to prepare a Kg of CS sample is $\$$17.60 and the overall manufacturing cost is $\$$86.85.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Graphite for Accelerator Beam Intercepting Devices

Nuclear grade fine-grain graphite has played a central role in particle accelerator Beam Intercepting Devices, BID (e.g. targets or beam dumps) for decades, especially for high beam power facilities, such as at Fermilab, CERN, PSI and JPARC. Operations of these facilities have demonstrated graphite’s reliable performance at beam powers up to about 1 MW and enduring over 10 million thermal shock cycles of over 3x10 7 K/s. Planned future accelerator facilities will push BID beam power capability into the multi-MW regime. The material challenges of such MW-class accelerator facilities, how graphite may meet those challenges, as well as an overview of recent and current research on graphite for high power accelerator BID will be presented.

Burleigh, Abe [Fermilab]↗
DOE OSTI2025

R&D Program for HEP High-Power Targets at Fermilab

A high-power target system is a key beam element to complete future High Energy Physics (HEP) experiments. In the recent past, major accelerator facilities have been limited in beam power not by their accelerators, but by the beam intercepting device survivability. The target must then endure high power pulsed beam, leading to high cycle thermal stresses/pressures and thermal shocks. The increased beam power will also create significant challenges such as corrosion and radiation damage that can cause harmful effects on the material and degrade their mechanical and thermal properties during irradiation. This can eventually lead to the failure of the material and drastically reduce the lifetime of targets and beam intercepting devices. In order to operate reliable beam-intercepting devices in the framework of energy and intensity increase projects of the future, it is essential to develop a strong R&D program and have synergy with various expertise. After presenting the high power targetry challenges facing next generation multi-MW accelerators, we will give an overview of Fermilab’s R&D program in support of High Power Targetry development. The RaDIATE collaboration (Radiation Damage In Accelerator Target Environment), managed by Fermilab, also draws on existing expertise in related fields to execute a coordinated strategy for high power targetry R&D between the 14 international member institutions.

Pellemoine, Frederique [Fermilab]↗
DOE OSTI2026

From Filamentary Failure to Durable Halide Perovskite Memristors

Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts and poor endurance, limiting their practical applications. Here, we elucidate both the resistive switching and failure mechanisms in perovskite memristors with a fluorine-doped tin oxide (FTO)/methylammonium lead triiodide (MAPbI3)/Ag structure and demonstrate a strategy to substantially enhance device durability. As opposed to commonly invoked filamentary mechanisms, electrical, structural, and spectroscopic analyses reveal that resistive switching arises from interfacial barrier modulation by reversible Ag redox reactions that drive electrochemical doping/dedoping within the perovskite. Device failure, however, originates from metallic Ag0 filamentation that ultimately forms permanent conductive pathways. Introducing an ultrathin Al2O3 interlayer at the inert-electrode interface improves device endurance by more than 30-fold, exceeding 15,000 switching cycles, without compromising other performance metrics. Interfacial characterization indicates that the Al2O3 layer modifies wettability of Ag deposits, promoting planar island growth rather than through-film filamentation. These findings establish a clear link between interfacial electrochemistry, metal precipitation behavior, and memristor reliability, highlighting inert-electrode interfacial engineering as an effective pathway toward durable perovskite-based memristors.

14 SOLAR ENERGY↗
DOE OSTI2026

Extreme Temperature Cryptography Based On Nitrogen-Incorporated Ultrananocrystalline Diamond

Physical entropy sources that remain stable under extreme temperatures are essential for cryptography in emerging technological frontiers in deep space exploration, geothermal energy harvesting, and nuclear energy. However, conventional semiconductor platforms fail to generate stable and reliable cryptographic keys above 200 degrees C due to performance degradation. Here, we report a diamond-based cryptographic primitive that exploits the defect-rich sp 2 -bonded grain boundary network in nitrogen-incorporated ultrananocrystalline diamond (n-UNCD) film as a robust entropy source to generate cryptographic keys that remain operationally stable even after enduring extreme temperatures of 700 degrees C for 54 h while also surviving thermal cycling between room temperature and 700 degrees C for 48 h. The strength of the generated keys is assessed through several cryptographic metrics such as bit uniformity, entropy, hamming distances, and correlation coefficients, all of which are found to be near their respective ideal values. Moreover, the generated keys pass the NIST SP 800 and SP 800-90B tests and are also resilient to supply bias variations and a regression-based machine learning attack model based on the Fourier series. The robustness of the keys is attributed to the better thermal stability and chemical inertness of the n-UNCD film. This is supported by high-resolution energy-dispersive X-ray spectroscopy (EDS), which shows no significant lateral diffusion of metal atoms into the n-UNCD layer, and by Raman spectroscopy, which reveals no significant changes in the bonding configuration of the n-UNCD structure. Our findings highlight the remarkable potential of n-UNCD film for extreme environment cryptography by expanding the operational limits of conventional hardware security platforms.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

A Combined Computational and Mathematical Analysis of Interconnect Fatigue Potential in Photovoltaic Modules

A finite element model of a 60-cell monocrystalline silicon glass-polymer photovoltaic module was simulated with ±1.0 kPa and ±2.4 kPa loads applied to the glass to calculate the deformation under load. Cell-to-cell displacements were used to approximate interconnect strain and stress. A mathematical fatigue cycle life relation was fitted to data for the interconnect material (copper), to generate a life prediction at each interconnect location based on the local stress means, reversal extents, and amplitudes. Interconnect stress was found to be significantly asymmetric about zero despite symmetric positive and negative module loads due to laminate thickness offsets about the neutral plane and the effects of module framing. Cycle life results indicated that interconnect fatigue failure was unlikely to occur over a 30-year lifetime of conservative wind and snow load cycles since the typical cell design feature of leaving some unconstrained length between the cell edge and first solder pad increases the effective gauge length and decreases the stress levels below the material endurance limit. Follow-up analyses found that 3.6 mm and 6.4 mm were the minimum unconstrained lengths required to survive the assumed lifetime of wind and snow cycles, respectively, confirming that typical industrial module constructions with 8–15 mm unconstrained lengths should survive conservatively. Notably, large magnitude, low-cycle snow loading was consistently the limiting factor requiring a longer unconstrained interconnect length. Finally, insights and workflows from this study inform module interconnection design limits for survival against mechanical fatigue in deployment environments.

14 SOLAR ENERGY↗
DOE OSTI2024

Limit Cycle Oscillating Detonation Wave Behavior Analysis Within a Rotating Detonation Engine

Limit cycle oscillation (LCO) detonation wave behaviors are presented and analyzed for test times exceeding 20 s in a water-cooled rotating detonation engine (RDE). LCO detonation waves exhibit cyclic acceleration and deceleration, resulting in oscillating wave spacing at unique process conditions. In previous RDE studies, similar behaviors have been studied as microsecond-scale instabilities leading to ascending or descending modal transitions. In the current work, however, LCO waves are considered a persistent wave mode, occupying unique portions of the operational envelope adjacent to those of their equally spaced counterparts. These occurrences of LCO waves are repeatable, enduring behaviors. A method to generate shifted contour surfaces specifically intended to extract and analyze wave spacing variation through time, termed limit cycle oscillation visualization (LCOV) surfaces, is presented. LCOV surfaces transform data into the reference frame of a primary traveling wave and are used to analyze quasi-steady, short-timescale, and transitional LCO modes. Results are leveraged to understand the relationship between fill height, wave strength, local wave acceleration, and subsequent LCO wave spacing for individual wave sets. In conclusion, quasi-steady LCO waves display wave spacing oscillations between equal spacing values associated with ±1 wave across runs exceeding 18 s.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Nitrogen Vacancies Induce Fatigue in Ferroelectric Al 0.93 B 0.07 N

Wurtzite ferroelectrics (e.g., Al 0.93 B 0.07 N) are being explored for high-temperature and emerging near-, or in-compute, memory architectures due to the material advantages offered by their large remanent polarization and robust chemical stability. Despite these advantages, current Al0.93B0.07N devices do not have sufficient endurance lifetime to meet roadmap targets. To identify the defects responsible for this limited endurance, a combination of electronic measurements and optical spectroscopies characterized the evolution of defect states within Al 0.93 B 0.07 N with cycling. Ultrathin (∼10 nm) metal contacts were used to optically probe regions subject to ferroelectric switching; photoluminescence spectroscopy identified the emergence of a transition near 2.1 eV whose intensity scaled with the non-switching polarization quantified via positive-up negative-down (PUND) measurements. Accompanying thermally stimulated depolarization current (TSDC) and modulus spectroscopy measurements also observed the strengthening of a state near 2.1 eV. The origin of this feature is ascribed to transitions between a nitrogen vacancy and another defect deeper in the bandgap. Recognizing that the impurity concentration is largely fixed, strengthening of this transition indicates an increase in the number of nitrogen vacancies. Switching, therefore, creates vacancies in Al 0.93 B 0.07 N likely due to hot-atom damage induced by the aggressive fields necessary to switch wurtzite materials that ultimately limits endurance.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Environmental Compatibility Issues for Ni-Based Alloys in Direct-Fired Supercritical CO2 Power Cycles

Direct-fired supercritical CO2 (sCO2) power cycles offer potential for high-efficiency power generation from natural gas and other fossil fuels with built-in carbon capture. Ni-based superalloys are the leading candidates for the hottest portions of these systems, where they must endure long-term exposure to high-temperature, high-pressure, high-velocity, impure CO2-rich environments. Herein we describe results of various experimental testing campaigns conduced at NETL showing that under such conditions, several simultaneously occurring degradation modes may be active including surface oxidation, alloy carburization, and oxide volatilization. It will be shown that the rates of degradation can be strongly affected by the alloy composition, impurities in the CO2, manufacturing method (wrought vs additive), and other factors. The influence of these factors in controlling alloy degradation are discussed in the context of potential compatibility issues for components in real sCO2 systems, such as compact heat exchangers. Finally, as a potential remedial measure, ongoing work involving protective coatings suitable for complex geometries is presented.

alloy oxidation↗
DOE OSTI2025

High-voltage water-scarce hydrogel electrolytes enable mechanically safe stretchable Li-ion batteries

Soft Li-ion batteries, based on conventional organic electrolytes, face performance degradation challenges due to moisture penetration and safety concerns due to possible leakage of toxic fluorine compounds and flammable solvents under mechanical damage. We design a water-scarce hydrogel electrolyte with fluorine-free lithium salt to achieve wide electrochemical stability window (up to 3.11 volts) in ambient air without hermetic packaging while balancing high stretchability (1348%), ion conductivity (41 millisiemens per centimeter), and self-healing capabilities for mechanically and chemically safe stretchable Li-ion batteries. Molecular synergy between hydrophilicity and lithiophilicity of zwitterionic polymer backbone is revealed by molecular dynamics simulations. The battery exhibits capacity retention under harsh mechanical stresses—enduring stretching, twisting, folding, and multiple through-punctures by a needle—while self-healing from repeated through cuts by a razor blade. Stable ambient operation for 1 month over 500 charge-discharge cycles (average coulomb efficiency, 95%) is achieved. A prototype self-healing electronic system with embedded soft batteries demonstrates practical application as a durable embodied energy source.

Science & Technology - Other Topics↗
DOE OSTI2026

Endurance exercise elicits temporal and sexual dimorphic multi-omics remodeling of liver metabolism revealed by MoTrPAC

The mechanisms by which exercise modulate liver metabolism, a central regulator of systemic metabolism, are poorly understood. Leveraging data from MoTrPAC, we analyzed liver adaptations across 1, 2, 4, and 8 weeks of exercise in male and female rats using multi-omic approaches. Female livers displayed a progressive increase in oxidative phosphorylation (OXPHOS) complexes (at the protein level), while male livers showed an increase in acetylation of OXPHOS, TCA cycle, and fatty acid oxidation enzymes. Exercise also enhanced liver cholesterol and bile acid synthesis, reducing liver lipid metabolites in males after 8 weeks of exercise. Male rats had higher fecal cholesterol and cholic acid levels, indicating a sex-specific mechanism of lipid excretion with exercise. Moreover, 8 weeks of training reduced markers related to hepatic stellate cell activation and fibrosis in both sexes. This study highlights the sexual dimorphic and temporal molecular signatures by which exercise modulates liver metabolism to provide hepatoprotective effects.

Kelty, Taylor↗
DOE OSTI2024

Phloroglucinol–2,6‐Diaminoanthraquinone as a Durable Redox Mediator for Enhancing Conversion Reaction Kinetics in Lithium‐Sulfur Batteries

Abstract Lithium‐sulfur batteries, despite being a promising solution for next‐generation secondary batteries, require substantial efforts to overcome the challenges of sluggish sulfur redox kinetics, polysulfides shuttling, and Li metal instability before achieving practical viability. Conventional strategies that utilize metal catalysts or soluble redox mediators (RMs) are limited by either impractical producing processes or unsatisfactory service life. Herein, an electrochemically active organic material, phloroglucinol – 2,6‐diaminoanthraquinone (PG‐DAAQ) is synthesized through a green and facile polymerization process to better resolve these issues. Serving as an RM at the cathode, PG‐DAAQ exhibits enduring redox activity within the sulfur operating potential window, leading to enhanced redox kinetics and sulfur utilization. Remarkably, even without any metal elements, PG‐DAAQ exhibits an excellent affinity to polysulfides, thereby suppressing the shuttling and facilitating the formation of a more favorable solid‐electrolyte interface to stabilize Li deposition at the anode. As a result, Li‐S cells employing PG‐DAAQ show significantly enhanced cycling and rate performances than the control cells. Even with a low electrolyte‐to‐sulfur ratio of 6, pouch cells with PG‐DAAQ deliver a reversible discharge capacity of 821 mA h g −1 after 100 cycles at a C/10 rate.

Lai, Tianxing↗
DOE OSTI2025

Process Optimization and Modeling for Minerals Sustainability (PrOMMiS) v1.0.0

The U.S. Department of Energy's ("DOE") Process Optimization and Modeling for Minerals Sustainability project ("PrOMMiS Project") was initiated in 2023 to transform the national Critical Minerals and Rare Earth Elements (CM & REE) landscape, thereby supporting DOE's three enduring strategic objectives: security, economic competitiveness, and environmental responsibility. To address this initiative, the PrOMMiS Project will develop, demonstrate, and deploy an open-source, advanced system modeling, optimization, and analysis application ("PrOMMiS Software Application") that will support industry decision-makers by accelerating the scale-up of novel CM & REE technologies by de-risking the development and deployment of commercial scale processes and maximizing learning throughout the development cycle.

Beattie, KeithS [Lawrence Berkeley National Labora↗