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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1982

Mathematical analysis of the Photovoltage Decay (PVD) method for minority carrier lifetime measurements

When the diffusion length of minority carriers becomes comparable with or larger than the thickness of a p-n junction solar cell, the characteristic decay of the photon-generated voltage results from a mixture of contributions with different time constants. The minority carrier recombination lifetime tau and the time constant l(2)/D, where l is essentially the thickness of the cell and D the minority carrier diffusion length, determine the signal as a function of time. It is shown that for ordinary solar cells (n(+)-p junctions), particularly when the diffusion length L of the minority carriers is larger than the cell thickness l, the excess carrier density decays according to exp (-t/tau-pi(2)Dt/4l(2)), tau being the lifetime. Therefore, tau can be readily determined by the photovoltage decay method once D and L are known.

Vonroos, O. H.↗

NASA NTRS1975

Airships for transporting highly volatile commodities

Large airships may prove feasible as carriers of commodities that move as gases or cryogenic liquids; buoyant gaseous cargo could be ballasted with liquid cargo. Airships are compact in shape, operate in a rarified medium, and hence can be fast and perhaps economic carriers of costly cryogenic tanks. The high-pressure gas pipeline has excessive surface area when carrying hydrogen and excessive fluid density when carrying natural gas, while the cryogenic ocean tanker runs in a dense medium and makes gravity waves. But the airship, despite its fluid dynamic advantages, faces problems of safety, weather, and altitude control.

Sonstegaard, M.↗

NASA NTRS1994

High power diode laser Master Oscillator-Power Amplifier (MOPA)

High power multiple quantum well AlGaAs diode laser master oscillator - power amplifier (MOPA) systems were examined both experimentally and theoretically. For two pass operation, it was found that powers in excess of 0.3 W per 100 micrometers of facet length were achievable while maintaining diffraction-limited beam quality. Internal electrical-to-optical conversion efficiencies as high as 25 percent were observed at an internal amplifier gain of 9 dB. Theoretical modeling of multiple quantum well amplifiers was done using appropriate rate equations and a heuristic model of the carrier density dependent gain. The model gave a qualitative agreement with the experimental results. In addition, the model allowed exploration of a wider design space for the amplifiers. The model predicted that internal electrical-to-optical conversion efficiencies in excess of 50 percent should be achievable with careful system design. The model predicted that no global optimum design exists, but gain, efficiency, and optical confinement (coupling efficiency) can be mutually adjusted to meet a specific system requirement. A three quantum well, low optical confinement amplifier was fabricated using molecular beam epitaxial growth. Coherent beam combining of two high power amplifiers injected from a common master oscillator was also examined. Coherent beam combining with an efficiency of 93 percent resulted in a single beam having diffraction-limited characteristics. This beam combining efficiency is a world record result for such a system. Interferometric observations of the output of the amplifier indicated that spatial mode matching was a significant factor in the less than perfect beam combining. Finally, the system issues of arrays of amplifiers in a coherent beam combining system were investigated. Based upon experimentally observed parameters coherent beam combining could result in a megawatt-scale coherent beam with a 10 percent electrical-to-optical conversion efficiency.

Andrews, John R.↗

NASA NTRS2005

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.

Carlin, J. A.↗

NASA NTRS1988

An observational study of MHD wave-induced density fluctuations upstream of the earth's bow shock

An investigation of plasma density fluctations upstream of the earth's bow shock and their association with MHD waves is reported. The normalized density fluctuation was 14 percent on a day when the plasma beta was less than unity and the waves were circularly polarized and of relatively low amplitude, and 17 percent on a day when the plasma beta was in excess of unity and the waves were elliptically polarized and of large fractional amplitude. On both days there was a feature of the density power spectrum at the MHD carrier wave frequency attributable to oblique propagation of the waves with propagation angles of a few degrees with respect to the mean field. Ponderomotive effects due to spatial gradient in the MHD wave energy density are proposed as responsible for a correlation betweeen density and transverse wave intensity on both days. Generation of density fluctuations by linear polarized MHD waves is not an important contributor to the observed density fluctuations.

Spangler, Steven↗

NASA NTRS1973

Intelligibility improvement of analog communication systems using an amplitude control technique.

An amplitude control technique has been employed for use with analog voice communication systems, which improves low-level phoneme reception and eliminates the received noise between words and syllables. Tests were conducted on a narrow-band frequency-modulation simplex voice communication channel employing the amplitude control technique. Presented for both the modified rhyme word tests and the phonetically balanced word tests are a series of graphical plots of the tests' score distribution, mean, and standard deviation as a function of received carrier-to-noise power density ratio. At low received carrier-to-noise power density ratios, a significant improvement in the intelligibility was obtained. A voice intelligibility improvement of more than 2 dB was obtained for the modified rhyme test words, and a voice intelligibility improvement in excess of 4 dB was obtained for the phonetically balanced word tests.

Wishna, S.↗

NASA NTRS1997

Europa's differentiated internal structure: inferences from two Galileo encounters

Doppler data generated with the Galileo spacecraft's radio carrier wave during two Europa encounters on 19 December 1996 (E4) and 20 February 1997 (E6) were used to measure Europa's external gravitational field. The measurements indicate that Europa has a predominantly water ice-liquid outer shell about 100 to 200 kilometers thick and a deep interior with a density in excess of about 4000 kilograms per cubic meter. The deep interior could be a mixture of metal and rock or it could consist of a metal core with a radius about 40 percent of Europa's radius surrounded by a rock mantle with a density of 3000 to 3500 kilograms per cubic meter. The metallic core is favored if Europa has a magnetic field.

Flight Experiment↗

NASA NTRS1997

Europa's Differentiated Internal Structure: Inferences from Two Galileo Encounters

Doppler data generated with the Galileo spacecraft's radio carrier wave during two Europa encounters on 19 December 1996 (E4) and 20 February 1997 (E6) were used to measure Euroapa's external gravitational field. The measurements indicate that Europa has a predominantly water ice-liquid outer shell about 100 to 200 klilometers thick and a deep interior with a density in excess of about 4000 kilograms per cubic meter.

Galileo↗

NASA NTRS1987

Analysis of the interaction of a laser pulse with a silicon wafer - Determination of bulk lifetime and surface recombination velocity

The decay of excess minority carriers produced in a silicon wafer of thickness d by a laser pulse is analyzed. A comprehensive theory based on this analysis is presented for the determination of bulk lifetime Tau(b) and surface recombination velocity S. It is shown that, starting with an exponential spatial profile, the carrier profile assumes a spatially symmetrical form after approximately one time constant of the fundamental mode of decay. Expressions for the spatial average of the carrier density as a function of time are derived for three temporal laser pulse shapes: impulse, square, and Gaussian. Particular attention is paid to the time constants of the fundamental and higher modes of decay. The ratios of the time constants of the higher modes to the fundamental mode, as well as the time constant of the fundamental mode, are presented over wide ranges of values of S and d. For Sd less than about 40 sq cm/s, a two-wafer method is developed to determine Tau(b) and S; it is also shown that the requirement of d/Tau(b) greater than about 20S is sufficient to adequately guarantee that the asymptotic value of the instantaneous observed lifetime differs from the bulk lifetime by no more than 10 percent.

Luke, Keung L.↗

NASA NTRS1999

Computer Modeling of Electrostatic Aggregation of Granular Materials in Planetary and Astrophysical Settings

Electrostatic forces strongly influence the behavior of granular materials in both dispersed (cloud) systems and semi-packed systems. These forces can cause aggregation or dispersion of particles and are important in a variety of astrophysical and planetary settings. There are also many industrial and commercial settings where granular matter and electrostatics become partners for both good and bad. This partnership is important for human exploration on Mars where dust adheres to suits, machines, and habitats. Long-range Coulombic (electrostatic) forces, as opposed to contact-induced dipoles and van der Waals attractions, are generally regarded as resulting from net charge. We have proposed that in addition to net charge interactions, randomly distributed charge carriers on grains will result in a dipole moment regardless of any net charge. If grains are unconfined, or fluidized, they will rotate so that the dipole always induces attraction between grains. Aggregates are readily formed, and Coulombic polarity resulting from the dipole produces end-to-end stacking of grains to form filamentary aggregates. This has been demonstrated in USML experiments on Space Shuttle where microgravity facilitated the unmasking of static forces. It has also been demonstrated in a computer model using grains with charge carriers of both sign. Model results very closely resembled micro-g results with actual sand grains. Further computer modeling of the aggregation process has been conducted to improve our understanding of the aggregation process, and to provide a predictive tool for microgravity experiments slated for Space Station. These experiments will attempt to prove the dipole concept as outlined above. We have considerably enhanced the original computer model: refinements to the algorithm have improved the fidelity of grain behavior during grain contact, special attention has been paid to simulation time steps to enable establishment of a meaningful, quantitative time axis, and calibration of rounding accuracies have been conducted to test cumulative numerical influences in the model. The model has been run for larger grain populations, variable initial cloud densities, and we have introduced random net charging to individual grains, as well as a net charge to the cloud as a whole. The model uses 3 positive and 3 negative charges randomly distributed on each grain, with up to 160 grains contained within various size "boxes" that define the initial number densities in the clouds. Each charge represents localized charged region on a grain, but does not necessarily imply single quantized charge carriers. The Coulomb equations are then allowed to interact for each monopole: dipoles and any higher order charge coupling is a natural product of these "free" interactions over which the modeler exerts no influence. The charges are placed on surfaces of grains at random locations. A series of runs was conducted for neutral grains that had a perfect balance of negative and positive char carriers. Runs were also conducted with grains having additional fractional charges ranging between 0 and 1. By adding fractional charges of one sign, the model created grain populations in which all grains had excess charges the same sign, giving the cloud an overall net charge. This simulates clouds subjected to ionizing radiation (e. protoplanetary debris disk around a protosun), or any other process of charge biasing in a grain population (e.g., volcanic plumes). In another run series, random fractional charges of either sign were added to the grains so th some grains had a slight net positive charge while others had a slight net negative charge. This simulates triboelectrically-charged grain populations in which acquisition of an electron by one surface is at the expense creating a hole elsewhere. This dual sign charging was applied in two ways: in one case the cloud remained neutral by ensuring that all grain excess charges added to zero; in the other case, the cloud was permitted slight net char by not imposing a charge-balance condition. Additional information is contained in the original.

Marshall, J.↗

NASA NTRS1991

Experiment and theoretical study of the propagation of high power microwave pulse in air breakdown environment

In the study of the propagation of high power microwave pulse, one of the main concerns is how to minimize the energy loss of the pulse before reaching the destination. In the very high power region, one has to prevent the cutoff reflection caused by the excessive ionization in the background air. A frequency auto-conversion process which can lead to reflectionless propagation of powerful EM pulses in self-generated plasmas is studied. The theory shows that under the proper conditions the carrier frequency, omega, of the pulse will indeed shift upward with the growth of plasma frequency, omega(sub pe). Thus, the plasma during breakdown will always remain transparent to the pulse (i.e., omega greater than omega(sub pe)). A chamber experiment to demonstrate the frequency auto-conversion during the pulse propagation through the self-generated plasma is then conducted in a chamber. The detected frequency shift is compared with the theoretical result calculated y using the measured electron density distribution along the propagation path of the pulse. Good agreement between the theory and the experiment results is obtained.

Kuo, S. P.↗

NASA NTRS1996

A Comprehensive Analysis of the Physical Properties of Advanced GaAs/AlGaAs Junctions

Extensive studies have been performed on MQW junctions and structures because of their potential applications as avalanche photodetectors in optical communications and imaging systems. The role of the avalanche photodiode is to provide for the conversion of an optical signal into charge. Knowledge of junction physics, and the various carrier generation/recombination mechanisms, is crucial for effectively optimizing the conversion process and increasing the structure's quantum efficiency. In addition, the recent interest in the use of APDs in imaging systems has necessitated the development of semiconductor junctions with low dark currents and high gains for low light applications. Because of the high frame rate and high pixel density requirements in new imaging applications, it is necessary to provide some front-end gain in the imager to allow operation under reasonable light conditions. Understanding the electron/hole impact ionization process, as well as diffusion and surface leakage effects, is needed to help maintain low dark currents and high gains for such applications. In addition, the APD must be capable of operating with low power, and low noise. Knowledge of the effects of various doping configurations and electric field profiles, as well as the excess noise resulting from the avalanche process, are needed to help maintain low operating bias and minimize the noise output.

Menkara, Hicham M.↗

NASA NTRS2011

Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.

Aveline, David C.↗