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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Topological protection in a Landau flat band at v = 7/11, a candidate filling factor for unconventional correlations

Strong interactions in Landau flat bands are known to stabilize correlated states that do not form in other types of flat bands. We report hallmarks of topological protection at the Landau level filling factor v = 7/11 in a 2D electron system. The v = 7/11 filling factor is the particle-hole conjugate of v = 4/11⁠, a filling factor intensely studied for the possibility of realizing unconventional electronic correlations. Our data establish a new instance for an unusual fractional quantum Hall state and opens up possibilities for the study of unconventional correlations in an enlarged parameter space. We report and discuss transport signatures developing at other filling factors of interest v = 7/11, 5/8⁠, and 8/13⁠, which however in our sample do not exhibit topological protection.

composite fermions↗
DOE OSTI2020

Perovskite Solar Cells with Enhanced Fill Factors Using Polymer-Capped Solvent Annealing

Despite huge improvements in power conversion efficiencies of perovskite solar cells, the technology is still limited by fill factors at around 80%. In this work, we report perovskite solar cells having exceptionally high fill factors of 85% and enhanced open-circuit voltage without sacrificing short-circuit current through a polymer-capped solvent-annealing process assisted by a hot air blower. Additionally, during the solvent-annealing, the perovskite surface flattens and the perovskite grains agglomerate into micrometer-sized clusters having enlarged α-phase crystallites, while the δ-phase simultaneously disappears. The optimized structure reduces energetic disorder and trap-assisted recombination in the perovskite layer, resulting in an enhanced efficiency from 18.2% to 19.8% and improved device lifetime. Our results provide a pathway to increase the device efficiency and stability of perovskite solar cells, and have the potential to stimulate research on scalable poly-crystal perovskite layer fabrication in optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Even-Denominator Fractional Quantum Hall State at Filling Factor ν = 3 / 4

Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs are those observed at even-denominator Landau level filling factors, as their quasiparticles are generally believed to obey non-Abelian statistics and be of potential use in topological quantum computing. Such states, however, are very rare and fragile, and are typically observed in the excited Landau level of 2D electron systems with the lowest amount of disorder. Here we report the observation of a new and unexpected even-denominator FQHS at filling factor ν = 3/4 in a GaAs 2D hole system with an exceptionally high quality (mobility). Furthermore, our magnetotransport measurements reveal a strong minimum in the longitudinal resistance at ν = 3/4, accompanied by a developing Hall plateau centered at (h/e 2 )/(3/4). This even-denominator FQHS is very unusual as it is observed in the lowest Landau level and in a 2D hole system. While its origin is unclear, it is likely a non-Abelian state, emerging from the residual interaction between composite fermions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Impact of Fill Factor on Electro-slag Remelting Operations

Vacuum induction melting (VIM), electro-slag remelting (ESR) and vacuum arc remelting (VAR) are all techniques used to make high quality ingots of complex chemistries. In some cases, all three are used, e.g., alloys for aerospace applications and increasingly those for fossil power applications under extreme conditions. Electroslag remelting operation is a complicated endeavor, dependent upon several factors including operating current, voltage, and geometry. A research scale 440 lb capacity ESR furnace was used to melt low carbon steel (1018 steel) electrodes of different diameters using various melt rates. This was used to assess melt parameters and sidewall and other quality aspects of the product ingots. These observations were compared to results from ESR modeling using MeltFlow-ESR. It was found that fill factor had a significant impact on operating voltage while current had a significant impact on melt rate. Ultimately, a combination of fill factor and power gave the best prediction of melt rate during steady state.

Jablonski, Paul↗
DOE OSTI2026

Understanding Recombination Pathways of CdSeTe/CdTe Devices Using Temperature Dependence of Fill Factor

Understanding the temperature dependence of photovoltaic parameters is critical for identifying performance limiting mechanisms in CdTe-based solar cells. In this study, we investigate the temperature dependence of fill factor (FF(T)) in CdSeTe/CdTe solar cells using a combination of experimental current density-voltage (JV) measurements and numerical simulations. The measured FF(T) exhibits a nonlinear response with temperature, peaking at moderate temperature values (10–30°C). Through numerical modeling, we reveal that this peaking behavior in FF(T) arises when the dominant recombination mechanism transitions from bulk to interface with increasing temperature. This transition is primarily driven by low hole mobility (0.6–1.2 cm2/V·s), while electron mobility, interface recombination velocities, and carrier lifetime also contribute to the effect. Our findings demonstrate that FF(T) analysis is a promising diagnostic tool for distinguishing recombination pathways and guiding the optimization of thin-film CdTe solar cells under real-world conditions.

CdTe photovoltaics↗
DOE OSTI2023

Diffused trenches for high fill-factor Low-Gain Avalanche Diodes

Low-Gain Avalanche Diodes (LGADs) are a class of silicon detectors that have been specifically designed for the fast detection of minimum ionizing particles (mips) in High-Energy Physics experiments. While they provide timing resolution on the order of a few tens of picoseconds, they cannot achieve high spatial resolution due to the intrinsic characteristics of their structures. Thus, active R&D is on-going to develop detectors based on LGADs to improve their spatial resolution while maintaining the timing performance of the LGADs. Such devices are, for example, AC-coupled LGADs and Deep-Junction LGADs. Another device option is the Trench-Isolated LGAD (TI LGAD), where trenches etched at the periphery of the pixels isolate them while providing a high fill-factor. Here, in this paper, we present a variation of this latter approach, demonstrating its feasibility by means of 2-dimensional TCAD simulations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Nano-Plasticity of an Electrified Ionic Liquid/Electrode Interface: Uncovering Hard–Soft Structuring via Controlled Metal Fill Factor

Here, ionic liquids (ILs) nanostructuring at electrified interfaces is of both fundamental and practical interest as these materials are increasingly gaining prominence in energy storage and conversion processes. However, much remains unresolved about IL potential-controlled (re)organization under highly polarized interfaces, mostly due to the difficulty of selectively probing both the distal and proximal surface layers of adsorbed ions. In this work, the structural dynamics of the innermost layer (<10 nm from the surface) were independently interrogated from that of the ionic layers in the sub-surface region (>100 nm from the surface), using an infrared (IR) spectroscopy approach. By tuning the metal fill factor of gold films deposited on conductive metal oxide-modified IR internal reflection elements, the charge-driven (re)structuring of the inner and distal layers of 1-butyl-1-methylpyrrolidinium trifluoromethanesulfonate is unveiled. Within a relatively wide potential region (~±1 V) bounding the potential of zero charges, the ionic liquid is shown to undergo a reversible (i.e., soft) reorganization whereby the innermost layer of anions (cations) is exchanged by a layer of cations (anions). Kinetically unhindered changes in the number density of constituent cations and anions largely follow electrostatic expectations in the subsurface region, whereas the innermost layer exhibits a pronounced hysteresis and very slow relaxation. Under larger negative potential bias, IL restructuring is characterized by a highly irreversible (i.e., hard) and intense interfacial densification of the BMPy + cations, consistent with the formation of nanoscale segregated liquids. The outcomes of this work reveal a plastic IL nanostructuring under a strong electric field.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Collective Excitations at Filling Factor 5/2: The View from Superspace

Herein, we present a microscopic theory of the neutral collective modes supported by the non-Abelian fractional quantum Hall states at filling factor 5/2. The theory is formulated in terms of the trial states describing the Girvin–MacDonald–Platzman mode and its fermionic counterpart. These modes are superpartners of each other in a concrete sense, which we elucidate.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Fill Factor Loss in Fielded Photovoltaic Modules Due to Metallization Failures, Characterized by Luminescence and Thermal Imaging

Understanding the causes of photovoltaic module failure in the field can be achieved using spatially-resolved imaging tools in combination with current-voltage (IV) characterization. We evaluate 23 field-degraded modules by comparing their IV characteristics with module images obtained by electroluminescence, photoluminescence, UV-fluorescence, and dark lock-in thermography. We identify primarily metallization failures (metallization series resistance, solder point heating, broken fingers, disrupted interconnects) in these modules that has led to a severe drop in the fill factor and up to 35% power loss over only 2 years of deployment.

14 SOLAR ENERGY↗
DOE OSTI2025

Dielectric constant engineering of nonfullerene acceptors enables a record fill factor of 83.58% and a high efficiency of 20.80% in organic solar cells

Organic solar cells (OSCs) have achieved power conversion efficiencies (PCEs) surpassing 20%, but their development remains hindered by the inherently low dielectric constant (εr) of organic semiconductors, which limits charge transport and contributes to serious recombination losses. Herein, we present a comprehensive strategy to overcome the challenge by engineering the dielectric properties of nonfullerene acceptors (NFAs). Two Y-series NFAs of BTP-N3F and BTP-C3F have been synthesized featuring trifluoromethyl (CF 3 ) end-capped alkyl side chains. This molecular design significantly enhances the dipole moment and ε r (up to ∼5.9) when compared to the reference acceptor Y6 (∼3), reducing the exciton binding energy (E b ) and improving charge transport. Furthermore, the incorporation of a high-εr polymer additive, poly(pentafluorostyrene) (PPFS), synergistically improves the active layer morphology and dielectric properties, enabling efficient charge extraction and reduced recombination losses. Devices based on the optimized D18-Cl/BTP-C3F system have achieved a record-high fill factor (FF) of 83.58% and an impressive PCE of 20.80%, setting a new benchmark for OSCs. Finally, our results underscore the pivotal role of ε r in enhancing device performance and establish a versatile pathway for advancing OSC efficiency and stability through molecular and morphological optimization.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Phase diagram of twisted bilayer graphene at filling factor $v = ±3$

Here, we study the correlated insulating phases of twisted bilayer graphene (TBG) in the absence of lattice strain at integer filling $v = ±3$. Using the self-consistent Hartree-Fock method on a particle-hole symmetric model and allowing translation symmetry breaking terms, we obtain the phase diagram with respect to the ratio of AA interlayer hopping (w 0 ) and AB interlayer hopping (w 1 ). When the interlayer hopping ratio is close to the chiral limit (w 0 /w 1 ≲ 0.5), a quantum anomalous Hall state with Chern number v c = ±1 can be observed consistent with previous studies. Around the realistic value w 0 /w 1 ≈ 0.8, we find a spin and valley polarized, translation symmetry breaking, state with C 2⁢z T symmetry, a charge gap and a doubling of the moiré unit cell, dubbed theC 2⁢z T stripe phase. The real-space total charge distribution of this C 2⁢z T stripe phase in the flat band limit does not have modulation between different moiré unit cells, although the charge density in each layer is modulated, and the translation symmetry is strongly broken. Other symmetries, including C 2⁢z , C 2⁢x , particle-hole symmetry P, and the topology of the C 2⁢z T stripe phase, are also discussed in detail. We observed braiding and annihilation of the Dirac nodes by continuously turning on the order parameter to its fully self-consistent value, and provide a detailed explanation of the mechanism for the charge gap opening despite preserving C 2⁢z T and valley U⁡(1) symmetries. In the transition region between the quantum anomalous Hall phase and the C 2⁢z T stripe phase, we find an additional competing state with comparable energy corresponding to a phase with a tripling of the moiré unit cell.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

The shape of convection in 2D and 3D global simulations of stellar interiors

Context. Theoretical descriptions of convective overshooting in stellar interiors often rely on a basic one-dimensional parameterization of the flow called the filling factor for convection. Several different definitions of the filling factor have been developed for this purpose, based on: (1) the percentage of the volume, (2) the mass flux, and (3) the convective flux that moves through the boundary. Aims. We examine these definitions of the filling factor with the goal of establishing their ability to explain differences between 2D and 3D global simulations of stellar interiors that include fully compressible hydrodynamics and realistic microphysics for stars. Methods. We study convection and overshooting in pairs of identical two-dimensional (2D) and three-dimensional (3D) global simulations of stars produced with MUSIC , a fully compressible, time-implicit hydrodynamics code. We examine pairs of simulations for (1) a 3 M ⊙ red giant star near the first dredge-up point, (2) a 1 M ⊙ pre-main-sequence star with a large convection zone, (3) the current sun, and (4) a 20 M ⊙ main-sequence star with a large convective core. Results. Our calculations of the filling factor based on the volume percentage and the mass flux indicate asymmetrical convection near the surface for each star with an outer convection zone. However, near the convective boundary, convective flows achieve inward-outward symmetry for each star that we study; for 2D and 3D simulations, these filling factors are indistinguishable. A filling factor based on the convective flux is contaminated by boundary-layer-like flows, making a theoretical interpretation difficult. We present two possible new alternatives to these frequently used definitions of a filling factor, which instead compare flows at two different radial points. The first alternative is the penetration parameter of Anders et al. (2022, ApJ, 926, 169). The second alternative is a new statistic that we call the plume interaction parameter. We demonstrate that both of these parameters captures systematic differences between 2D and 3D simulations around the convective boundary.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

Particle-Hole Asymmetric Ferromagnetism and Spin Textures in the Triangular Hubbard-Hofstadter Model

In a lattice model subject to a perpendicular magnetic field, when the lattice constant is comparable to the magnetic length, one enters the “Hofstadter regime,” where continuum Landau levels become fractal magnetic Bloch bands. Strong mixing between bands alters the nature of the resulting quantum phases compared to the continuum limit; lattice potential, magnetic field, and Coulomb interaction must be treated on equal footing. Using determinant quantum Monte Carlo and density matrix renormalization group techniques, we study this regime numerically in the context of the Hubbard-Hofstadter model on a triangular lattice. In the field-filling phase diagram, we find a broad wedge-shaped region of ferromagnetic ground states for filling factor ν ≤ 1 , bounded below by filling factor ν = 1 and bounded above by half filling the lowest Hofstadter subband. We observe signatures of SU(2) quantum Hall ferromagnetism at filling factors ν = 1 and ν = 3 . The phases near ν = 1 are particle-hole asymmetric, and we observe a rapid decrease in ground-state spin polarization consistent with the formation of skyrmions only on the electron doped side. At large fields, above the ferromagnetic wedge, we observe a low-spin metallic region with spin correlations peaked at small momenta. We argue that the phenomenology of this region likely results from exchange interaction mixing fractal Hofstadter subbands. The phase diagram derived beyond the continuum limit points to a rich landscape to explore interaction effects in magnetic Bloch bands. Published by the American Physical Society 2024

Ding, Jixun K.↗
DOE OSTI2025

Top-Performing Photovoltaic Cells Compared to the Shockley–Queisser Limit

Top-performing single-junction and two-terminal tandem devices that include at least one polycrystalline cell are compared with each other and their ideal limits. The parameters of open-circuit voltage, short-circuit current, and fill-factor are individually compared to the Shockley–Queisser limit to investigate where different technologies have room to improve. Technologies, such as silicon and cadmium telluride have the most room for improvement in open-circuit voltage currently utilizing 87% and 81% of their maxima, respectively. Detailed diode and fill-factor loss analysis is presented for single-junction devices to give further insight on how they compare and where efficiency is lost. Single-crystal technologies demonstrate a fill-factor closer to the Shockley–Queisser limit than polycrystalline devices. The high diode quality factor of polycrystalline devices is the leading cause of the decreased fill-factor. Similar analysis on tandem cells with at least one thin-film cell shows that although their efficiency exceeds that of the single-junction cells, the fraction of their ideal efficiency is smaller. Here, by comparing parameters to the Shockley–Queisser limit, it becomes clearer where certain technologies have the potential for improvement.

High efficiency↗