Recent developments in thin-film capacitors
Thin film capacitor research and development - deposition of materials for capacitor dielectrics, and materials compatibility with integrated circuits
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Thin film capacitor research and development - deposition of materials for capacitor dielectrics, and materials compatibility with integrated circuits
Thin film capacitors with up to twenty-two active layers have been deposited by RF sputtering. The materials were aluminum electrodes of 1200 to 1500 angstrom thickness and silica dielectric layers of 3000 to 6000 angstrom thickness. The best electrical characteristics were capacitances of nearly 0.1 microfarad for an active area of 1.25 square centimeters, dissipation factor of less than 0.01 over a frequency range of 0.5 to 100 kilohertz and energy density of approximately 70 millijoules per cubic centimeter of active deposited material at a working voltage of 40 volts. These aluminum-silica capacitors exhibit excellent electrical stability over a temperature range from -55 C to +300 C.
Metallized polymer film capacitors (MPFC) manufactured by NanoLam technology have a better volumetric efficiency and performance that may exceed the reliability of conventional MPFCs typically used in power and high voltage systems that require high insulation resistance and low power losses. These capacitors can be also an effective replacement for electrolytic and stacked ceramic capacitors currently used in space applications looking to save significant volume and mass. This report evaluates the effects of environmental conditions including radiation and storage at room and high temperatures on the characteristics of NanoLam elements used in the production of MPFCs. Assessments of the reliability acceleration factors and predictions for the useful life are made based on highly accelerated life tests (HALT) using distributions of times to parametric failures at different stress conditions. It has been shown that even a relatively small amount of moisture absorbed at room environments in the dielectric layers may substantially change the probability of failure. In the presence of moisture, degradation processes that started after voltage application continue with time during storage.
Feasibility of thin metal and oxide film capacitors
Effective screening techniques are evaluated for detecting insulation resistance degradation and failure in hermetically sealed metallized film capacitors used in applications where low capacitor voltage and energy levels are common to the circuitry. A special test and monitoring system capable of rapidly scanning all test capacitors and recording faults and/or failures is examined. Tests include temperature cycling and storage as well as low, medium, and high voltage life tests. Polysulfone film capacitors are more heat stable and reliable than polycarbonate film units.
High vacuum approach for high dielectric constant thin film capacitor fabrication to reduce microcircuit size
The alignment of the stable electrical characteristics of film capacitors in the physical dimensions of ceramic and tantalum capacitors are discussed. The reliability of polycarbonate and mylar capacitors are described with respect to their compatibility with military specifications. Graphic illustrations are presented which show electrical and physical comparisons of film, ceramic, and tantalum capacitors. The major focus is on volumetric efficiency, weight reduction, and electrical stability.
Ferroelectric materials and antiferroelectricity for study of thin film capacitor with high dielectric constant
A liquid impregnated, plastic film (wet) capacitor was developed that is thought to be the most reliable and space efficient capacitor of any type ever produced for high voltage, pulse discharge service. The initial design stores five times the energy of a premium quality dry capacitor of equivalent energy and reliability. The technology, as well as a production capacitor design using this technology are described.
Feasibility of thin metal and oxide film capacitors
In 2023 Quantic Paktron announced production of Capstick high reliability multilayer metallized polymer film capacitors based on a new type of dielectric films and proprietary technology of manufacturing. These parts might be used in power conversion systems, snubbing, and high-frequency applications effectively replacing currently used hermetic polymer capacitors manufactured per MIL-PRF-83421. The purpose of this work is to evaluate design and performance of the parts, address potential reliability issues and get preliminary assessments of reliability and the possibility of use in space projects.
Feasibility of producing thin metal and oxide- film capacitors with stable electrical properties in high temperature environments
Effects of varying RF sputtering parameters on dielectric properties of Teflon thin film capacitors
Rare earth dielectric oxides in thin film capacitors
High vacuum deposition techniques for fabricating thin film capacitors
Research is reported to identify polycarbonate (PC) film characteristics and fabrication procedures which extend the reliable performance range of PC capacitors to 125 C without derating, and establish quality control techniques and transfer technology to US PC film manufacturers. The approach chosen to solve these problems was to develop techniques for fabricating biaxially oriented (BX) 2 microns or thinner PC film with a low dissipation factor up to 140 C; isotropic dimensional stability; high crystallinity; and high voltage breakdown strength. The PC film structure and morphology was then correlated to thermal and electrical capacitor behavior. Analytical techniques were developed to monitor film quality during capacitor fabrication, and as a result, excellent performance was demonstrated during initial capacitor testing.
Capacitors, as the basic building block of power electronics and electrical systems, are the major constraint of the increasingly integrated power systems that require new capable polymer dielectric films operating at higher temperatures >125 °C. Despite tremendous research efforts on the lab scale, there remains a considerable barrier and knowledge basis for converting polymeric films to functioning capacitors desired in actual applications. Here, the authors tackled the polyetherimide (PEI) film scale up issues and developed various engineering processes for film de-wrinkling, optimal metallization, static elimination, and capacitor fabrication improvement. The authors discovered various fabrication challenges such as the electrostatic charge, metallization scheme, winding tension, and end electrode disconnects. To fabricate a high yield of PEI capacitor bobbins, it is necessary to utilize static eliminators (radioactive ionizers), moderately thick aluminum metallization (15–30 Ω/sq), and winding tension (60–100 g). It is also effective to evaluate capacitance, dielectric loss, equivalent series resistance, and thermal cycling stability of capacitors. This work sheds some light on converting PEI films and other polymeric films to capacitors on a scale up fabrication effort. The practical learning from film handling to capacitor fabrication in this work provided the necessary knowledge for manufacturing high-temperature polar film capacitors.
This presentation discusses the methodology for developing moisture ingress models for components inside a PV inverter. This method uses time series-based analyses for moisture ingress unlike a single maximum temperature, humidity, and voltage setpoint used in Hallberg-Peck equations. Experiments were performed for determination of moisture ingress time to estimate moisture ingress in and out of the capacitor device under normal and extreme temperatures and RH conditions.