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At least 19 records

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current, and temperature. The as-grown and regrown diodes, with and without surface treatment, have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S I , dependence on the current was S I ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10 –18 –10 –16 cm 2 /Hz (f = 10 Hz) at the current density J = 1 A/cm 2 at room temperature. The noise temperature dependences at different currents revealed peaks at T = 375–400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. Here, we argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.

36 MATERIALS SCIENCE↗

Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated with Si Ions

The properties of defects in n-p-n Si bipolar junction transistors (BJTs) caused by 17 MeV Si ions are investigated via current-voltage, low-frequency noise, and deep-level transient spectroscopy (DLTS) measurements. Four prominent radiation-induced defects in the base-collector junction of these transistors are identified via DLTS. At least two defect levels are observed in temperature-dependent low-frequency 1/ f noise measurements, one that is similar to a prominent defect in DLTS and another that is not. Defect microstructures are discussed. Here our results show that DLTS and 1/ f noise measurements can provide complementary information about defects in linear bipolar devices.

42 ENGINEERING↗

Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

MoS 2 has great interest for nanoscale electronic devices, including transistors and sensors. Defect‐free structure, clean interface with the gate dielectric, and metals with suitable metal–semiconductor junctions are key for reliable devices. Molybdenum is shown as an excellent electrode for MoS 2 field‐effect transistors (FETs), but the correlation among device current, field‐effect mobility, and the low‐frequency noise (LFN) with number of atomic layers is not studied. Furthermore, the impact of Mo/MoS 2 Schottky barrier on electronic injection and scattering in the device needs to be understood. Herein, by studying the FETs with channels of different numbers of atomic‐layer thicknesses, it is shown that a molybdenum metal contact to MoS 2 provides reliable current injection with low Schottky barrier height, low contact resistance, low electron–phonon scattering, and negligible impurity scattering. The mobility and LFN are optimal at a channel thickness of ≈12 atomic layers, which is consistent with the “mobility maximum window” in MoS 2 transistors with prior studies using other contact metals.

Kwon, Jiseok↗

Low-frequency noise in β-(Al x Ga1 −x )2O3 Schottky barrier diodes

We report on the low-frequency electronic noise in β-(AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10−12 cm2/Hz (f = 10 Hz) at 1 A/cm2 current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier and, correspondingly, impact the electric current. The obtained results help in understanding the noise in Schottky barrier diodes made of ultra-wide bandgap semiconductors and can be used for the material and device quality assessment.

Physics↗

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO x /β‐Ga 2 O 3 p–n Heterojunction Diodes

Temperature dependence of the low-frequency electronic noise in NiO x /β-Ga 2 O 3 p–n heterojunction diodes is reported. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). It is observed that there is an intriguing non-monotonic dependence of the noise on temperature near T = 380 K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes is determined to be on the order of 10 −14 cm 2 Hz −1 (f = 10 Hz) at 0.1 A cm −2 current density. In terms of the noise level, NiO x /β-Ga 2 O 3 p–n diodes perform excellently for new technology and occupy an intermediate position among devices of various designs implemented with different ultra-wide-bandgap semiconductors. The obtained results are important for understanding the electronic properties of NiO x /β-Ga 2 O 3 heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies.

1/f noise↗

Positive- and negative-frequency noise from an ensemble of two-level fluctuators

The analysis of charge noise based on the Bloch-Redfield treatment of an ensemble of dissipative two-level fluctuators generally results in a violation of the fluctuation-dissipation theorem. The standard Markov approximation (when applied to the two-level fluctuators coupled to a bath) can be identified as the main origin of this failure. The resulting decoherence rates only involve the bath response at the fluctuator frequency, and thus completely neglect the effects of frequency broadening. A systematic and computationally convenient way to overcome this issue is to employ the spectator-qubit method: by coupling an auxiliary qubit to the two-level fluctuator ensemble, an analytical approximation for S(ω) fully consistent with the fluctuation-dissipation theorem can be obtained. We discuss the resulting characteristics of the noise which exhibits distinct behavior over several frequency ranges, including a 1/f to 1/f2 crossover with a T3 temperature dependence of the crossover frequency.

2-dimensional systems↗

Seismic monitoring and high-frequency noise using arrays in the Arabian Peninsula

Seismic arrays provide useful tools for regional seismic monitoring. Two small-aperture, regionally-oriented arrays, QWAR and HQAR, were deployed in Saudi Arabia and Oman in 2012 and 2016. We utilize a time-domain beampacking method, similar to frequency-wavenumber analysis, to examine the performance of the arrays in terms of slowness and azimuthal bias and event detection capabilities. Additionally, we investigate persistent ambient noise sources recorded by the arrays. We find that the arrays provide slowness vectors with biases comparable with similar-sized arrays of the International Monitoring System in other locations around the world. At QWAR, regional events of magnitude 3.0 and above are detected a majority of the time, and as magnitudes increase to 4.0 and above, the detection rate is greater than 82%. Finally, strong noise generation, primarily with slownesses characteristic of Lg waves, is found in the directions of the northern Arabian/Persian Gulf and southern Red Sea and may be a factor in event detection capabilities.

58 GEOSCIENCES↗

Low-loss low thermo-optic coefficient Ta 2 O 5 on crystal quartz planar optical waveguides

Optical resonator-based frequency stabilization plays a critical role in ultra-low linewidth laser emission and precision sensing, atom clocks, and quantum applications. However, there has been limited success in translating traditional bench-top stabilization cavities to compact on-chip integrated waveguide structures that are compatible with photonic integration. The challenge lies in realizing waveguides that not only deliver low optical loss but also exhibit a low thermo-optic coefficient and frequency noise stability. Given the problematic sources of frequency noise within dielectrics, such as thermorefractive noise, resonators with small thermo-optic response are desirable for on-chip reference cavities. We report the first demonstration of a Ta 2 O 5 (tantala) waveguide core fabricated on a crystal quartz substrate lower cladding with TEOS-PECVD SiO 2 upper cladding. This waveguide offers significant advantages over other waveguides in terms of its low thermo-optic coefficient and reduced thermorefractive-related frequency noise. We describe the waveguide structure and key design parameters as well as fabrication considerations for processing tantala on quartz waveguides. We report a waveguide thermo-optic coefficient of -1.14 × 10 -6 RIU/K, a value that is over 6 times smaller in magnitude than that of SiO 2 -substrate tantala waveguides, with a propagation loss of 1.19 dB/cm at 1550 nm and <1.33 dB/cm across the 1525 nm–1610 nm wavelength range. Within a 1.6 mm radius ring resonator, we demonstrate a 2.54 × 10 5 intrinsic Q factor. With the potential for very low loss and the ability to control the thermal response, this waveguide platform takes a key step toward creating thermally stable integrated resonators for on-chip laser frequency stabilization and other applications.

42 ENGINEERING↗

Low-Frequency Electronic Noise in Quasi-2D van der Waals Antiferromagnetic Semiconductor FePS 3 —Signatures of Phase Transitions

Here, low-frequency current fluctuations, i.e., noise, in the quasi-2D van der Waals antiferromagnetic semiconductor FePS 3 with the electronic bandgap of 1.5 eV is investigated. The electrical and noise characteristics of the p-type, highly resistive, thin films of FePS 3 are measured at different temperatures. The noise spectral density is of the 1/f-type over most of the examined temperature range but reveals well-defined Lorentzian bulges, and increases strongly near the Néel temperature T N =118 K (f is the frequency). Intriguingly, the noise spectral density attains its minimum at temperature T≈200 K, which is attributed to an interplay of two opposite trends in noise scaling—one for semiconductors and another for materials with the phase transitions. The Lorentzian corner frequencies reveal unusual dependence on temperature and bias voltage, suggesting that their origin is different from the generation—recombination noise in conventional semiconductors. The obtained results are important for proposed applications of antiferromagnetic semiconductors in spintronic devices. They also attest to the power of the noise spectroscopy for monitoring various phase transitions.

36 MATERIALS SCIENCE↗

Engineering Dynamical Sweet Spots to Protect Qubits from 1/$f$ Noise

Protecting superconducting qubits from low-frequency noise is essential for advancing superconducting quantum computation. Based on the application of a periodic drive field, we develop a protocol for engineering dynamical sweet spots which reduce the susceptibility of a qubit to low-frequency noise. Using the framework of Floquet theory, we prove rigorously that there are manifolds of dynamical sweet spots marked by extrema in the quasi-energy differences of the driven qubit. In particular, for the example of fluxonium biased slightly away from half a flux quantum, we predict an enhancement of pure-dephasing by three orders of magnitude. Employing the Floquet eigenstates as the computational basis, we show that high-fidelity single- and two-qubit gates can be implemented while maintaining dynamical sweet-spot operation. We further confirm that qubit readout can be performed by adiabatically mapping the Floquet states back to the static qubit states, and subsequently applying standard measurement techniques. Our work provides an intuitive tool to encode quantum information in robust, time-dependent states, and may be extended to alternative architectures for quantum information processing.

Huang, Ziwen↗

Spatial noise correlations in a Si/SiGe two-qubit device from Bell state coherences

Here, we study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anticorrelated noise, respectively. From these measurements we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. We expect nuclear spin noise to have an uncorrelated nature. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti)correlated noise sources with an asymmetric effect on the two qubits as can result from charge noise. Such a scenario in combination with nuclear spins is plausible given the data and the known decoherence mechanisms. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Signal processing to reduce dark noise impact in precision timing

We introduce a technique to mitigate the effects of low frequency noise on precision timing. The example of Dark Count Noise Rate (DCR) in Silicon Photomultipliers (SiPMs) is emphasized. This technique exploits the correlation between time shifts on the leading edge of a signal and the residual slope of the baseline (due to noise) which remains after baseline subtraction. In fast timing applications (such as for Time-of-flight particle ID) the signal arrival time is typically captured on the signal leading edge. The signal risetime is often fixed by the physics of the sensor and input circuit. Then accurate pulse timing can be achieved by correcting a leading edge threshold time (depending on a slope proportional to both the Amplitude and the risetime) to a “constant fraction” time. This compensation for time walk due to amplitude fluctuations breaks down once we introduce interference from low frequency noise on the leading edge. In this paper we demonstrate that an additional measurement of the slope at threshold can be used to correct for this noise jitter.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Dynamics of coupled thermoacoustic modes: Noise and frequency spacing effects

Practical combustion systems consist of multiple thermoacoustic modes that are linearly stable or unstable at a wide range of frequencies. When coupled, the modal interactions are a strong function of the frequency spacing between them – having very significant implications on interpretation of linear stability or instability of modes from experimental data. Frequency spacing between the modes particularly influences the stability and existence of potential limit cycle solutions. In this paper, we extend earlier deterministic studies to include the effects of noise, studying how deterministic dynamics change with the addition of noise and the simultaneous impact of frequency spacing (i.e., closely, or widely spaced). Specifically, this paper characterizes three key effects of noise, which are (1) distribution of limit cycle amplitudes (“diffusion”), (2) shift in the average limit cycle amplitudes (“noise induced drift”), and (3) introduction of new bifurcations that are not present in the deterministic system. Key conclusions from this work are that in highly noisy practical environments, a deterministic/ low noise analysis will not be sufficient to explain even critical qualitative features of the system – such as existence of stable limit cycles or their amplitudes. Furthermore, the nature of noise-induced effects on nonlinear modal interactions can be fundamentally different for degenerate, closely spaced, and widely spaced modes.

42 ENGINEERING↗

Model validation and error attribution for a drifting qubit

Qubit performance is often reported in terms of a variety of single-value metrics, each providing a facet of the underlying noise mechanism limiting performance. However, the value of these metrics may drift over long timescales, and reporting a single number for qubit performance fails to account for the low-frequency noise processes that give rise to this drift. Here, in this work, we demonstrate how we can use the distribution of these values to validate or invalidate candidate noise models. We focus on the case of randomized benchmarking (RB), where typically a single error rate is reported but this error rate can drift over time when multiple passes of RB are performed. We show that using a statistical test as simple as the Kolmogorov-Smirnov statistic on the distribution of RB error rates can be used to rule out noise models, assuming the experiment is performed over a long enough time interval to capture relevant low frequency noise. With confidence in a noise model, we show how care must be exercised when performing error attribution using the distribution of drifting RB error rate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Integrated photonic molecule Brillouin laser with a high-power sub-100-mHz fundamental linewidth

Photonic integrated lasers with an ultra-low fundamental linewidth and a high output power are important for precision atomic and quantum applications, high-capacity communications, and fiber sensing, yet wafer-scale solutions have remained elusive. Here we report an integrated stimulated Brillouin laser (SBL), based on a photonic molecule coupled resonator design, that achieves a sub-100-mHz fundamental linewidth with greater than 10-mW output power in the C band, fabricated on a 200-mm silicon nitride (Si 3 N 4 ) CMOS-foundry compatible wafer-scale platform. The photonic molecule design is used to suppress the second-order Stokes (S2) emission, allowing the primary lasing mode to increase with the pump power without phase noise feedback from higher Stokes orders. The nested waveguide resonators have a 184 million intrinsic and 92 million loaded Q, over an order of magnitude improvement over prior photonic molecules, enabling precision resonance splitting of 198 MHz at the S2 frequency. We demonstrate S2-suppressed single-mode SBL with a minimum fundamental linewidth of 71±18 mHz, corresponding to a 23±6-mHz 2 /Hz white-frequency-noise floor, over an order of magnitude lower than prior integrated SBLs, with an ∼11-mW output power and 2.3-mW threshold power. The frequency noise reaches the resonator-intrinsic thermo-refractive noise from 2-kHz to 1-MHz offset. The laser phase noise reaches −155 dBc/Hz at 10-MHz offset. The performance of this chip-scale SBL shows promise not only to improve the reliability and reduce size and cost but also to enable new precision experiments that require the high-speed manipulation, control, and interrogation of atoms and qubits. Realization in the silicon nitride ultra-low loss platform is adaptable to a wide range of wavelengths from the visible to infrared and enables integration with other components for systems-on-chip solutions for a wide range of precision scientific and engineering applications including quantum sensing, gravitometers, atom interferometers, precision metrology, optical atomic clocks, and ultra-low noise microwave generation.

Liu, Kaikai (ORCID:0000000213609646)↗

Near-surface seismic anisotropy in Antarctic glacial snow and ice revealed by high-frequency ambient noise

Ambient seismic recordings taken at broad locations across Ross Ice Shelf and a dense array near West Antarctic Ice Sheet (WAIS) Divide, Antarctica, show pervasive temporally variable resonance peaks associated with trapped seismic waves in near-surface firn layers. These resonance peaks feature splitting on the horizontal components, here interpreted as frequency-dependent anisotropy in the firn and underlying ice due to several overlapping mechanisms driven by ice flow. Frequency peak splitting magnitudes and fast/slow axes were systematically estimated at single stations using a novel algorithm and compared with good agreement with active source anisotropy measurements at WAIS Divide determined via active sources recorded on a 1 km circular array. The approach was further applied to the broad Ross Ice Shelf (RIS) array, where anisotropy axes were directly compared with visible surface features and ice shelf flow lines. The near-surface firn, depicted by anisotropy above 30 Hz, was shown to exhibit a novel plastic stretching mechanism of anisotropy, whereby the fast direction in snow aligns with accelerating ice shelf flow.

58 GEOSCIENCES↗

Cumulative fidelity of large-momentum-transfer clock atom interferometers in the presence of laser noise

Clock atom interferometry is an emerging technique in precision measurements that is particularly well suited for sensitivity enhancement through large momentum transfer (LMT). While current systems have demonstrated momentum separations of several hundreds of photon momenta, next-generation quantum sensors are targeting an LMT enhancement factor beyond 10 4 . However, the viability of LMT clock interferometers has recently come into question due to the potential impact of laser frequency noise. Here, in this work, we resolve this concern by analyzing the cumulative fidelity of sequential state inversions in an LMT atom interferometer. We show that the population error from 𝑛 pulses applied from alternating directions scales linearly with 𝑛. This is a significant advantage over the 𝑛 2 scaling that occurs when probing a two-level system 𝑛 times from the same direction. We further show that contributions to the interferometer signal from parasitic paths generated by imperfect pulses are negligible, for any loss mechanism. These results establish that laser frequency noise is not a practical limitation for the development of high-fidelity LMT clock atom interferometers.

Mach-Zehnder atom interferometry↗