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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2020

Body of Knowledge for Gallium Nitride Power Electronics

Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This report serves as a body of knowledge (BOK) in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The document also discusses GaN’s applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified. This BOK focuses mainly on power applications for GaN, but will also briefly mention radio frequency (RF) applications for completeness.

Gallium Nitride Power Electronics↗
NASA NTRS1972

Gallium nitride optoelectronic devices

The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

Chu, T. L.↗
DOE OSTI2026

Uranium Doped Gallium Nitride Epitaxial Thin Films

Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid-state lighting and high-power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping of most of the elements of the periodic table, but the actinides remain unexplored. Molecular beam epitaxy is used to demonstrate uranium doping of GaN single crystals. High structural quality of the host matrix is maintained despite partial elemental segregation of the uranium dopant into 1D structures at the levels presented here. Electronic transport measurements reveal relatively high conductivity, which persists down to cryogenic temperature and is characterized by the formation of narrow gaps in the electronic band structures very close to the Fermi level. Photoluminescence measurements reveal that the U-doped GaN exhibits optical behavior similar to that of the GaN substrate. The addition of actinide materials to a non-centrosymmetric, optically active, radiation-hard, and electronically tunable host matrix opens a world of possibilities for investigating and leveraging elements with high electron correlations in the pursuit of novel devices.

36 - MATERIALS SCIENCE↗
NASA NTRS2003

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Freeman, Jon C.↗
NASA NTRS2019

Body of Knowledge (BOK): Gallium Nitride (GaN) Power Electronics for Space Applications

Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This presentation summarizes a body of knowledge (BOK) document in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The presentation also discusses GaN's applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Boomer, Kristen↗
NASA NTRS2014

Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.

thermal cycling tests↗
NASA NTRS2021

LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)

A better understanding of the linear energy transfer and the range of proton recoil ions in gallium nitride is necessary to properly evaluate GaN device radiation tolerance. By analyzing the linear energy transfer (LET) and range of recoil heavy ions in GaN we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know towards the effort of ensuring radiation tolerance.

gallium nitride (GaN)↗
DOE OSTI2024

Measurement of spin-polarized photoemission from wurtzite and zinc blende gallium nitride photocathodes

Spin-polarized photoemission from wurtzite and zinc blende gallium nitride (GaN) photocathodes has been observed and measured. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron affinity with a cesium monolayer deposited on their surfaces. A field-retarding Mott polarimeter was used to measure the spin polarization of electrons photoemitted from the top of the valence band. A spectral scan with a tunable optical parametric amplifier constructed to provide low-bandwidth light revealed peak spin polarizations of 17% and 29% in the wurtzite and zinc blende photocathodes, respectively. Zinc blende GaN results are analyzed with a spin polarization model accounting for experimental parameters used in the measurements, while possible mechanisms influencing the obtained spin polarization values of wurtzite GaN are discussed.

Physics↗
NASA NTRS2021

Development of Gallium Nitride Monolithic Microwave Integrated Circuits for Ka-Band Remote Sensing

We have been developing gallium nitride (GaN)monolithic microwave integrated circuits (MMICs) towards thegoal of implementing a single chip transceiver frontend forcloud radar arrays at Ka-band. We present our first iterationdesign, fabrication and test cycle implementation of GaN poweramplifiers (PAs), low noise amplifiers (LNAs), driver amplifier,single-pole- double and triple throw switches, and voltagecontrolled attenuator. These components are necessary forimplementing a transceiver unit cell concept with digitalcalibration capabilities to enable scalable array sizes for radarand radiometry.

Cao, Yu↗
DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower-voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 um or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV-class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 10 12 to 3.76 × 10 14 cm 2 , and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

gallium nitride↗
DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Scientific/Technical Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 µm or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

20KV↗
NASA NTRS2017

Multiband Reconfigurable Harmonically Tuned Gallium Nitride (GaN) Solid-State Power Amplifier (SSPA) for Cognitive Radios

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse Class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6 percent, and Drain Efficiency (DE) of 48.9 percent under continuous wave (CW) operation.

Cognitive↗
DOE OSTI2023

Simulation of gallium nitride vertical fin-shaped field effect transistor for use as thermal neutron detector

Through the use of a radiation detection system simulation framework, a gallium nitride vertical fin-shaped field effect transistor (FinFET) was studied for output response when utilized as a thermal neutron detector. The FinFET was assumed to had been backfilled with boron carbide, reactive to thermal neutrons. The GaN FinFET was modeled with radiation transport from MCNP, and the electronic transport from COMSOL Multiphysics. Fabricated FinFET devices (not neutron reactive) were tested to aid in the tuning of the COMSOL FinFET model. Through time-depenent studies, the drain current response pulse to simulated ionization due to single events lead to building of a database of device responses to radiation. By integrating the current pulses over time, the induced charge was calculated. Using the results of the radiation transport PTRAC file in combination with the induced charge database, an integrated charge spectrum was calculated.

Davidson, Bryce L.↗
NASA NTRS2019

Multi-Band and Multi-Function Reconfigurable Gallium Nitride Based Fully Solid-State Microwave Power Module for Cognitive Radio/Radar Platforms

This paper presents as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurable S-/X-band Gallium Nitride (GaN) based fully solid-state microwave power module (SSMPM) for the role as the transmit module in a cognitive radio (CR). The SSMPM synergistically integrates multiple amplifiers through diplexing and high power switches to enable a single SSMPM capable of functioning as both S-/X-band amplifiers for telemetry, tracking, and command (TT&C), telecommunications, and science data downlink or as X-band radar for proximity sensing onboard a planetary exploration spacecraft. Integration of an electric field shaping field plate (FP) onto the GaN high electron mobility transistors (HEMTs) in this SSMPM provides increased performance and reliability for operation in the harsh conditions of space. This SSMPM is capable of delivering saturated power (Psat) of 39 dBm (8 W continuous wave (CW)) at S-band, P(sub sat) of 43 dBm (20 W CW) at X-band, and P(sub sat) of >50 dBm (>100 W Pulsed) at X-band.

Simons, Rainee N.↗
NASA NTRS2012

The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

Patterson, Richard L.↗
NASA NTRS2012

Effects of Radiation and Long-Term Thermal Cycling on EPC 1001 Gallium Nitride Transistors

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Data obtained on long-term thermal cycling of new un-irradiated and irradiated samples of EPC1001 gallium nitride enhancement-mode transistors are presented. This work was done by a collaborative effort including GRC, GSFC, and support the NASA www.nasa.gov 1 JPL in of Electronic Parts and Packaging (NEPP) Program

Patterson, Richard L.↗