Generation-recombination noise in double- injection diodes
Generation-recombination noise theory extension to nonlinear devices applied to double injection diode in various operation modes
Bilger, H. R.↗
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Generation-recombination noise in extrinsic photoconductive detectors
A theory of generation-recombination noise is presented and applied to the analysis of the performance limitations of extrinsic photoconductive detectors. The theory takes account both of the photoinduced generation of carriers and of thermal generation that is due to the finite temperature of the detector. Explicit formulas are derived that relate the detector response time, responsivity, and noise equivalent power to the material properties of the photoconductor (such as the presence of compensating impurities) and to the detector's operating conditions, such as its temperature and the presence of background radiation. The detector's performance is shown to degrade at high background levels because of saturation effects.
Brukilacchio, T. J.↗
Quasiparticle Generation-Recombination Noise in the Limit of Low Detector Volume
We have measured the quasiparticle generation-recombination (GR) noise in aluminium lumped element kinetic inductors with a wide range of detector volumes at various temperatures. The basic detector consists of meandering inductor and interdigitated capacitor fingers. The inductor volume is varied from 2 to 153 mu m(3) by changing the inductor width and length to maintain a constant inductance. We started with measuring the power spectrum density (PSD) of the detectors frequency noise which is a function of GR noise and we clearly observed the spectrum roll off at 10 kHz which corresponds to the quasiparticle lifetime. Using data from a temperature sweep of the resonator frequency we convert the frequency fluctuation to quasiparticle fluctuation and observe its strong dependence on detector volume: detectors with smaller volume display less quasiparticle noise amplitude. Meanwhile we observe a saturated quasiparticle density at low temperature from all detectors as the quasiparticle life time tqp approaches a constant value at low temperature.
Li, Juliang↗
Noise Optimization for MKIDs with Different Design Geometries and Material Selections
The separation and optimization of noise components is critical to microwave-kinetic inductance detector (MKID) development. We analyze the effect of several changes to the lumped-element inductor and interdigitated capacitor geometry on the noise performance of a series of MKIDs intended for millimeter-wavelength experiments. We extract the contributions from two-level system noise in the dielectric layer, the generation-recombination noise intrinsic to the superconducting thin-film, and system white noise from each detector noise power spectrum and characterize how these noise components depend on detector geometry, material, and measurement conditions such as driving power and temperature. We observe a reduction in the amplitude of two-level system noise with both an elevated sample temperature and an increased gap between the fingers within the interdigitated capacitors for both aluminum and niobium detectors. We also verify the expected reduction of the generation-recombination noise and associated quasiparticle lifetime with reduced inductor volume. This study also iterates over different materials, including aluminum, niobium, and aluminum manganese, and compares the results with an underlying physical model.
generation-recombination noise↗
Excess noise in high-current diamond diodes
We report the results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by the 1/f and generation-recombination noise, which reveals itself as Lorentzian spectral features (f is the frequency). The generation-recombination bulges are characteristic of diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices—it scales as I 2 at the low (I < 10 μA) and high (I > 10 mA) currents and, rather unusually, remains nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, show a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with the increasing temperature. The obtained results are important for the development of noise spectroscopy-based approaches for device reliability assessment for high-power diamond electronics.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Kinetic Inductance Photodetectors Based on Nonequilibrium Response in Superconducting Thin-Film Structures
While experimental studies of kinetic-inductance sensors have been limited so far by the temperature range near the superconducting transition, these detectors can be very sensitivity at temperatures well below the transition, where the number of equilibrium quasiparticles is exponentially small. In this regime, a shift of the quasiparticle chemical potential under radiation results in the change of the kinetic inductance, which can be measured by a sensitive SQUID readout. We modeled the kinetic inductance response of detectors made from disordered superconducting Nb, NbC, and MoRe films. Low phonon transparency of the interface between the superconductor and the substrate causes substantial re-trapping of phonons providing high quantum efficiency and the operating time of approximately 1 ms at 1 K. Due to the small number of quasiparticles, the noise equivalent power of the detector determined by the quasiparticle generation-recombination noise can be as small as approximately 10(exp -19) W/Hz(exp 1/2) at He4 temperatures.
Sergeev, A. V.↗
Dual-Resonator Kinetic-Inductance Detector for Distinction between Signal and 1/ƒ Frequency Noise
Astronomical kinetic inductance detectors (KIDs), similar to quantum information devices, experience performance-limiting noise from materials. In particular, 1/ƒ (frequency) noise arises from two-level system defects (TLSs) in the circuit dielectrics and material interfaces and can be a dominant noise mechanism. Here, we present a dual-resonator KID (DuRKID), which is designed for improved noise-equivalent power relative to standard 1/ƒ -noise-limited KIDs. In this study we present the DuRKID schematic, a fabricated example, our first measurement results, a theoretical model including 1/ƒ noise, and a system-noise model containing additional noise sources. The circuit consists of two superconducting resonators sharing an electrical capacitance bridge of four capacitors, each of which hosts TLSs. The device is intended to operate using hybridization of the modes, which causes TLSs to either couple to one mode or the other, depending upon which capacitor they reside in. In contrast, the signal will affect a resonator inductance and, due to mode hybridization, this causes correlated frequency changes in both modes. Therefore, one can better distinguish the photon signal from the TLS frequency noise. To achieve hybridization, a TiN inductor is current biased to allow tuning of one bare-resonator mode into degeneracy with the other. Measurements show that the resonator modes hybridize as expected. The inter-resonator coupling and unintentional coupling of the two resonators to transmission lines are also characterized in measurements. A quantum information-science model allows device-parameter extraction from experimental data and a 1/ƒ noise analysis with uncorrelated noise. A system-noise analysis of the DuRKID, with comparisons to standard KIDs, is performed with generation-recombination noise and amplifier noise. The study reveals that the DuRKID can exhibit a large performance advantage over TLS-limited KID detectors.
N Forouzani↗
HgCdTe for NASA EOS missions and detector uniformity benchmarks
Important NASA Earth Observing System (EOS) missions, Atmospheric Infrared Sounder (AIRS) and Moderate Resolution Imaging Spectrometer (MODIS-N), which require detector spectral response in the range of 14 to 17 microns at medium background flux levels and operation in the range of temperatures between 65 to 95 K, will be flown beginning in the next few years. Currently, a prime candidate detector technology for these missions is trapping-mode photoconductive HgCdTe devices. These devices can be tailored to the exact cutoff wavelengths required by those missions, and thus offer the performance advantages of an intrinsic detector which is ideally matched to the mission wavelength. Under the long wavelength-background-temperature conditions of these EOS missions, any detector will at best be thermal generation-recombination noise limited. Photoconductive devices are generally preferred under these circumstances, since at elevated temperatures their performance degrades with n(sub i) while for photovoltaic detectors performance degrades as n sub i(exp 2) n sub i is the intrinsic carrier concentration which is a function of alloy composition and temperature, but not doping. Very high performance trapping-mode photoconductive HgCdTe detectors have been developed which can be reproducibly fabricated. Detectivity (D asterisk) at 80K and 16 micron cutoff wavelength in excess of 10(exp 11) Jones has been measured for these devices. Power dissipation is at least two orders of magnitude less than conventional HgCdTe photoconductors - on the order of 0.12 W/cm(exp 2) compared with 12 W/cm(exp 2). EOS missions define thermal noise limited conditions for the long wavelength operating bands. Trapping-mode photoconductive HgCdTe detectors are linear under such conditions and responsivity is independent of background flux. At lower temperatures or high flux conditions in which background flux limits detector performance, trapping-mode detectors have a responsivity which varies with background flux. Internal calibration must be provided for radiometric measurements under the latter conditions (not an EOS mission concern). Liquid phase epitaxy is used to grow these HgCdTe device structures. This technique has been shown to give control of the cutoff wavelength on the order of 16 plus or minus 1 micron or less, both from run to run and across wafer dimensions of several centimeters on a side.
Norton, Paul R.↗
Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 to the -2nd to 10 to the 8 Hz
Equivalent gate noise voltage spectra of 1-micron gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the frequency range of 0.01 Hz to 100 MHz and commpared with the noise spectra of conventional AlGaAs/GaAs MODFET's and GaAs MESFET's. The prominent generation-recombination (g-r) noise bulge commonly observed in the vicinity of 10 kHz in conventional MODFET's at 300 K does not appear in the case of the new InGaAs quantum-well MODFET. Instead, its noise spectra indicate the presence of low-intensity multiple g-r noise components superimposed on a reduced 1/f noise. The LF noise intensity in the new device appears to be the lowest among those observed in any MODFET or MESFET. The noise spectra at 82 K in the new device represent nearly true 1/f noise. This unusual low-noise behavior of the new structure suggests the effectiveness of electron confinement in the quantum well that significantaly reduces electron trapping in the n-AlGaAs, and thus eliminates the g-r noise bulge observed in conventional MODFET's.
Liu, Shih-Ming J.↗
Sensitivity Enhancement and Random Telegraph Noise in Magnetic Tunnel Junctions with Compensated Anisotropy
We demonstrate the manipulation of perpendicular magnetic anisotropy (PMA) in magnetic tunnel junctions (MTJs) by varying the layer stacks and temperature. PMA is tuned to compensate the shape anisotropy, giving a nonhysteretic magnetic response, a noteworthy sensitivity enhancement, and a field detectability of 1.8 nT/$\sqrt{Hz}$ at 100 kHz. Such a method is further exemplified in multiple MTJs, providing a solution to obtain desired sensitivities and operating temperatures. Additionally, the electronic noise of this MTJ is revealed as a random telegraph noise (RTN) due to a generation-recombination process. In conclusion, the observed voltage-dependent RTN could potentially be applied to true random number generators.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature
We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current, and temperature. The as-grown and regrown diodes, with and without surface treatment, have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S I , dependence on the current was S I ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10 –18 –10 –16 cm 2 /Hz (f = 10 Hz) at the current density J = 1 A/cm 2 at room temperature. The noise temperature dependences at different currents revealed peaks at T = 375–400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. Here, we argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.
36 MATERIALS SCIENCE↗