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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Sensitivity analysis of the add-on price estimate for the silicon web growth process

The web growth process, a silicon-sheet technology option, developed for the flat plate solar array (FSA) project, was examined. Base case data for the technical and cost parameters for the technical and commercial readiness phase of the FSA project are projected. The process add on price, using the base case data for cost parameters such as equipment, space, direct labor, materials and utilities, and the production parameters such as growth rate and run length, using a computer program developed specifically to do the sensitivity analysis with improved price estimation are analyzed. Silicon price, sheet thickness and cell efficiency are also discussed.

Mokashi, A. R.↗
NASA NTRS1992

Bulk YBa2Cu3O(x) superconductors through pressurized partial melt growth processing

A novel pressurized partial melt growth process has been developed for producing large pieces of bulk Y-Ba-Cu-O superconductors. During long-time partial melt growth stage, an additional driving force for solidification is obtained by using pressurized oxygen gas. The microstructure and superconducting properties of the resulting samples were investigated. It was found that this new technique can eliminate porosity and inhomogeneity, promote large-scale grain-texturing, and improve interdomain coupling as well.

Hu, S.↗
NASA NTRS1983

Structure and growth process of vapor-grown carbon fibers

The structure, effect of heat, and growth process of vapor-grown carbon fibers are investigated. The growth process of the carbon fibers could be divided into three stages; nucleation, elongation, and thickening processes. Also, a multi-layered structure can be produced as well as graphitization.

Koyama, T.↗
NASA NTRS1988

Trace element differences between Archean, Proterozoic and Phanerozoic crustal components: Implications for crustal growth processes

Critical to models for continental crust growth and recycling are the processes through which crustal growth takes place. In particular, it is important to know whether these processes have changed fundamentally with time in response to the earth's thermal evolution, and whether the crustal compositions generated are compatible with crustal remobilization, crustal recycling, or represent primary additions. There are some significant and consistent differences in the major and trace element compositions of crustal components with time which have important implications for crustal growth processes. These will be illustrated with reference to Archean rocks from a number of shield areas, Proterozoic granitoids from Australia and elsewhere, Palaeozoic granitoids from Australia and Scotland, and Mesozoic - recent granitoids from present continental margin belts. Surprisingly some rather simple and consistent patterns energy using this technique. There are then significant differences in compositions of granitoid crustal additions throughout geological time, with a particular type of granitoid apparently dominating a particular time period. This implies that the tectonic processes giving rise to granite generation have changed in response to the earth's thermal evolution.

Tarney, J.↗
NASA NTRS1989

Temperature control and calibration issues in the growth, processing and characterization of electronic materials

The temperature control and calibration issues encountered in the growth, processing, and characterization of electronic materials are summarized. The primary problem area is identified as temperature control during epitaxial materials growth. While qualitative thermal measurements are feasible and reproducibility is often achievable within a given system, absolute calibration is essentially impossible in many cases, precluding the possibility of portability from one system to another. The procedures utilized for thermal measurements during epitaxial growth are described, and their limitations discussed.

Wilson, B. A.↗
NASA NTRS1985

Large-cell Monte Carlo renormalization of irreversible growth processes

Monte Carlo sampling is applied to a recently formulated direct-cell renormalization method for irreversible, disorderly growth processes. Large-cell Monte Carlo renormalization is carried out for various nonequilibrium problems based on the formulation dealing with relative probabilities. Specifically, the method is demonstrated by application to the 'true' self-avoiding walk and the Eden model of growing animals for d = 2, 3, and 4 and to the invasion percolation problem for d = 2 and 3. The results are asymptotically in agreement with expectations; however, unexpected complications arise, suggesting the possibility of crossovers, and in any case, demonstrating the danger of using small cells alone, because of the very slow convergence as the cell size b is extrapolated to infinity. The difficulty of applying the present method to the diffusion-limited-aggregation model, is commented on.

Nakanishi, H.↗
NASA NTRS1981

Development of advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.

Source record↗
NASA NTRS1993

Stability and instability of thermocapillary convection in models of the float-zone crystal-growth process

This project was concerned with the determination of conditions of guaranteed stability and instability for thermocapillary convection in a model of the float-zone crystal-growth process. This model, referred to as the half-zone, was studied extensively, both experimentally and theoretically. Our own earlier research determined, using energy-stability theory, sufficient conditions for stability to axisymmetric disturbances. Nearly all results computed were for the case of a liquid with Prandtl Number Pr = 1. Attempts to compute cases for higher Prandtl numbers to allow comparison with the experimental results of other researchers were unsuccessful, but indicated that the condition guaranteeing stability against axisymmetric disturbances would be a value of the Marangoni number (Ma), significantly higher than that at which oscillatory convection was observed experimentally. Thus, additional results were needed to round out the stability picture for this model problem. The research performed under this grant consisted of the following: (1) computation of energy-stability limits for non-axisymmetric disturbances; (2) computation of linear-stability limits for axisymmetric and non-axisymmetric disturbances; (3) numerical simulation of the basic state for half- and full-zones with a deformable free surface; and (4) incorporation of radiation heat transfer into a model energy-stability problem. Each of these is summarized briefly below.

Neitzel, G. P.↗
NASA NTRS1991

Energy stability of thermocapillary convection in a model of the float-zone crystal-growth process. II - Nonaxisymmetric disturbances

Energy-stability theory has been applied to investigate the stability properties of thermocapillary convection in a half-zone model of the float-zone crystal-growth process. An earlier axisymmetric model has been extended to permit nonaxisymmetric disturbances, thus determining sufficient conditions for stability to disturbances of arbitrary amplitude. The results for nonaxisymmetric disturbances are compared with earlier axisymmetric results, with linear-stability results for a geometry with an infinitely long aspect ratio and with stability boundaries from recent laboratory experiments.

Neitzel, G. P.↗
NASA NTRS1978

Development and Evaluation of Die Materials for Use in the Growth of Silicon Ribbons by the Inverted Ribbon Growth Process. Task 2: LSSA Project

Several ribbon growth experiments were performed from V-shaped dies coated with CVD Si3N4. The most significant result was the ability to perform five consecutive growth runs from the same die without mechanical degradation of the die through temperature cycling. The die was made from vitreous carbon coated with CVD Si3N4. Silicon oxynitride, Si2N2O, was examined with respect to thermal stability in contact with molten silicon. The results of X-ray analysis indicate that this material is converted to both alpha - and beta-Si3N4 in the presence of molten silicon. Experiments on the stability of CVD SiOxNy shoe that this material can be maintained in contact with molten silicon (sessile drop test) for greater than 30 h at 1450 C without total decompositon. These layers are converted mainly to beta-Si3N4.

Duffy, M. T.↗
NASA NTRS1979

A reconsideration of nucleation phenomena in light of recent findings concerning the properties of small clusters, and a brief review of some other particle growth processes

The paper examines mechanisms of nucleation and growth by condensation and coagulation in the light of recent research on properties of small clusters. Homogeneous, hetero-molecular, and heterogeneous nucleation is analyzed, and expressions for the rate of formation of a stable condensed phase and evaluation of the free energy of formation of charged droplets are given. Application of high-pressure mass spectrometry which makes possible a direct determination of intensity spectra for cluster distributions, measurement of the thermodynamic properties of individual ion clusters and determination of cluster entropy and bond energy is discussed. Finally, coagulation of the condensed phase is considered, noting that concentration and mean particle size vary during coagulation, but the shape distribution is time independent, leading to the concept of a self-preserving aerosol size distribution.

Castleman, A. W., Jr.↗
NASA NTRS1991

Growth of thin films of organic nonlinear optical materials by vapor growth processes - An overview and examination of shortfalls

Research on the growth of second- and third-order nonlinear optical (NLO) organic thin film by vapor deposition is reviewed. Particular attention is given to the experimental methods for growing thin films of p-chlorophenylurea, diacetylenes, and phthalocyanines; characteristics of the resulting films; and approaches for advancing thin film technology. It is concluded that the growth of NLO thin films by vapor processes is a promising method for the fabrication of planar waveguides for nonlinear optical devices. Two innovative approaches are proposed including a method of controlling the input beam frequency to maximize nonlinear effects in thin films and single crystals, and the alternate approach to the molecular design of organic NLO materials by increasing the transition dipole moment between ground and excited states of the molecule.

Frazier, D. O.↗
NASA NTRS1991

Characterization of the Bridgman crystal growth process by radiographic imaging

Elemental (Ge) and alloy (PbSnTe) crystal growth that is monitored via radiography to reveal both the interface position and the shape in real time is discussed for both seeded and unseeded growth. It is concluded that the interface position and the actual growth rate of a Bridgman grown crystal is dependent on the growth conditions. The actual growth rate which is a strong function of the degree of supercooling exceeded the pull rate by a factor of greater than two. The interface shape changed from concave to flat to convex during the growth.

Fripp, Archibald L.↗
NASA NTRS1981

Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

The process development continued, with a total of nine crystal growth runs. One of these was a 150 kg run of 5 crystals of approximately 30 kg each. Several machine and process problems were corrected and the 150 kg run was as successful as previous long runs on CG2000 RC's. The accelerated recharge and growth will be attempted when the development program resumes at full capacity in FY '82. The automation controls (Automatic Grower Light Computer System) were integrated to the seed dip temperature, shoulder, and diameter sensors on the CG2000 RC development grower. Test growths included four crystals, which were grown by the computer/sensor system from seed dip through tail off. This system will be integrated on the Mod CG2000 grower during the next quarter. The analytical task included the completion and preliminary testing of the gas chromatograph portion of the Furnace Atmosphere Analysis System. The system can detect CO concentrations and will be expanded to oxygen and water analysis in FY '82.

Source record↗
NASA NTRS1994

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.

George, M. A.↗
NASA NTRS1995

Investigation of nucleation and growth processes of diamond films by atomic force microscopy

The nucleation and growth of plasma enhanced chemical vapor deposited (PECVD) polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for: (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the films cross-section and interface however were not affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscoy (XPS) spectra indicates that some silicon carbide is present in the precursor layer.

George, M. A.↗
NASA NTRS1998

Application of Rotating Magnetic Fields to THM Growth Process: Te-CdTe

The numerical simulation of ongoing traveling heater method (THM) solution growth experiments of CdTe from Te solvent and the influence of a Rotating Magnetic Field (RMF) on control of convection in the solution zone is presented. The application of RMF is pursued as a means to actively control thermo-solutal convection in the solution zone which otherwise would be dominated by buoyancy forces. Numerical simulation and scaling analysis are used to generate a flow-regime map demarcating the boundary separating the buoyancy- and RMF-driven convection in the solution zone. Results indicate that whereas at low gravity levels the application of RMF can completely overwhelm buoyancy-induced convection, at normal gravity levels the successful control of convection by RMF requires use of fairly thin solvent zones. Simulation results also indicate that field strengths required to dominate natural convection on earth may lead to instabilities and transition to turbulence, and an associated deleterious effect on the quality of grown crystals. These and other simulations results are discussed in reference to experimental evidence.

LeClair, Mark↗