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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Bundled, interrupted, resistance heating elements provide specific heating profiles. Design allows for easily tailored lengths and locations of "hot sections" and larger surface areas for heat radiation.
Connection method applies force to two interfaces: that between heating element proper and heating-element support members and between heating-element support members and metal conductor. Inner rod of new connector system is maintained in tension by a spring (for example, Belleville washers). Connection is sufficiently complaint so tension remains within desired range, regardless of thermal expansion and contraction of various elements.
Heated element sensor for fluid flow detection in thermal conductive conduit with adaptive means to determine flow rate and direction
The iron and steel industry is critical for the modern world but is also very energy intensive and is a low margin industry. Hot rolling requires reheating steel slabs to ~1250 °C for hot rolling and involves yield loss due to scale formation. Electrification of this process using resistive heating could improve yield but is currently not possible due to the poor creep resistance of MoSi2 heating elements, which need to be operated well below their maximum temperatures when mounted horizontally. To solve this problem, novel MoSi2 composite heating elements with SiBCN ceramic reinforcements are being developed using high energy ball milling and spark plasma sintering. The creep performance of different heating elements and their corresponding microstructures and electrical properties will be presented.
Light, thin-film heating element is formed by vacuum deposition of metal onto a nonconductive surface to be heated. This small-sized heater has a very fast response time.
The iron and steel industry is critical for the modern world but is also responsible for 7% of the total energy sector CO2 emissions. It is a difficult industry to decarbonize due to the high temperature heat required for the production of steel, such as reheating steel slabs to ~1250 °C for hot rolling. Electrification of this process using resistive heating is currently not possible due to the poor creep resistance of MoSi2 heating elements, which need to be operated well below their maximum temperatures when mounted horizontally. To solve this problem, novel MoSi2 composite heating elements with SiBCN ceramic reinforcements are being developed using high energy ball milling and electric field assisted sintering (EFAS). The microstructure and density of the composites after sintering depends on the sintering parameters chosen. Herein we present the effects of EFAS sintering parameters on the microstructure and density of the MoSi2-SiBCN composites.
Low power, cylindrical heating element in a swaging anvil assembly heats the material being worked on. The increased ductility of heated material results in crack-free deformation.
Improvements were made in both electrode technology and ceramic conductor quality to increase significantly the lifetime and thermal cycling capability of electrically conducting ceramic heater elements. These elements were operated in vacuum, inert and reducing environments as well as oxidizing atmospheres adding to the versatility of the conducting ceramic as an ohmic heater. Using stabilized zirconia conducting ceramic heater elements, a furnace was fabricated and demonstrated to have excellent thermal response and cycling capability. The furnace was used to melt platinum-20% rhodium alloy (melting point 1904 C) with an isothermal ceramic heating element having a nominal working cavity size of 2.5 cm diameter by 10.0 cm long. The furnace was operated to 1940 C with the isothermal ceramic heating element. The same furnace structure was fitted with a pair of main heater elements to provide axial gradient temperature control over a working cavity length of 17.8 cm.
Thermal resistances in contact areas of heating elements
The effect of element size on the solution accuracies of finite-element heat transfer and thermal stress analyses of space shuttle orbiter was investigated. Several structural performance and resizing (SPAR) thermal models and NASA structural analysis (NASTRAN) structural models were set up for the orbiter wing midspan bay 3. The thermal model was found to be the one that determines the limit of finite-element fineness because of the limitation of computational core space required for the radiation view factor calculations. The thermal stresses were found to be extremely sensitive to a slight variation of structural temperature distributions. The minimum degree of element fineness required for the thermal model to yield reasonably accurate solutions was established. The radiation view factor computation time was found to be insignificant compared with the total computer time required for the SPAR transient heat transfer analysis.
The program not only can render temperature distributions in solids subjected to various thermal boundary conditions, including effects of diffuse-gray thermal radiation, but is fully compatible in capacity and in the finite-element model representation with that of its structural counterpart in the NASTRAN system. The development history of the finite-element approach for determining temperatures is summarized. The scope of analysis capability, program structure, features, and limitations are given with the objective of providing NASTRAN users with an overall veiw of the NASTRAN thermal analyzer.
FORTRAN computer program for generating geometrical data of heat transfer code
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Relatively-inexpensive radiant furnace brings specimen in controlled atmosphere to temperature higher than previously attainable - nearly as high as maximum operating temperature of heating element. Heating element made of refractory material like tungsten, molybdenum, graphite, or silicon carbide, or consists of plasma or electric arcs. Furnace distributes heat fairly uniformly over surface of specimen.
Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.
Concentrations of heat producing elements (Th, U, and K) in 58 samples representative of the main lithologies in a 100-km transect of the Superior Province of the Canadian Shield have been obtained. The relatively large variation in heat production found among the silicic plutonic rocks is shown to correlate with modal abundances of accessory minerals, and these variations are interpreted as premetamorphic. The present data suggest fundamental differences in crustal radioactivity distributions between granitic and more mafic terrains, and indicate that a previously determined apparently linear heat flow-heat production relationship for the Kapuskasing area does not relate to the distribution of heat production with depth.
The design of a high temperature furnace is presented which uses electrically conducting ceramic oxide heating elements. The heating elements are made of either thoria or stabilized zirconia which become conductive when preheated to 700 to 1000 C. These heater elements can be operated to 2200 C in oxidizing or inert atmospheres. The furnace is being designed to have a temperature which can be controlled to within 11 C. By a replacement of the heater element, the working cavity can be changed from isothermal to a cavity with a selected specific axial temperature gradient of up to 200 C per centimeter. This furnace concept is appropriate for the growth of crystals which might be grown best in an oxidizing atmosphere such as sapphire (melting point 2040 C), yttrium aluminum garnet (1970 C) or yttrium orthoaluminate (1875 C).