Mechanism of cold drawing in crystalline high polymers.
Cold drawing in crystalline high polymers enables polymer draw ratios to be calculated from crystal plasticity considerations
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Cold drawing in crystalline high polymers enables polymer draw ratios to be calculated from crystal plasticity considerations
The high-efficiency crystalline silicon solar cells research forum addressed high-efficiency concepts, surface-interface effects, bulk effects, modeling and device processing. The topics were arranged into six interactive sessions, which focused on the state-of-the-art of device structures, identification of barriers to achieve high-efficiency cells and potential ways to overcome these barriers.
The rationale for pursuing high efficiency crystalline silicon technology research is discussed. Photovoltaic energy systems are reviewed as to their cost effectiveness and their competitiveness with other energy systems. The parameters of energy system life are listed and briefly reviewed.
Research is reported to identify polycarbonate (PC) film characteristics and fabrication procedures which extend the reliable performance range of PC capacitors to 125 C without derating, and establish quality control techniques and transfer technology to US PC film manufacturers. The approach chosen to solve these problems was to develop techniques for fabricating biaxially oriented (BX) 2 microns or thinner PC film with a low dissipation factor up to 140 C; isotropic dimensional stability; high crystallinity; and high voltage breakdown strength. The PC film structure and morphology was then correlated to thermal and electrical capacitor behavior. Analytical techniques were developed to monitor film quality during capacitor fabrication, and as a result, excellent performance was demonstrated during initial capacitor testing.
This program is a study of the use of low energy hydrogen ion implantation for high efficiency crystalline silicon solar cells. The first quarterly report focuses on two tasks of this program: (1) an examination of the effects of low energy hydrogen implants on surface recombination speed; and (2) an examination of the effects of hydrogen on silicon regrowth and diffusion in silicon. The first part of the project focussed on the measurement of surface properties of hydrogen implanted silicon. Low energy hydrogen ions when bombarded on the silicon surface will create structural damage at the surface, deactivate dopants and introduce recombination centers. At the same time the electrically active centers such as dangling bonds will be passivated by these hydrogen ions. Thus hydrogen is expected to alter properties such as the surface recombination velocity, dopant profiles on the emitter, etc. In this report the surface recombination velocity of a hydrogen emplanted emitter was measured.
It is shown that aerosols generated at low temperatures and high condensation rate spontaneously form in a highly crystalline state. The resonant absorption bands in the IR spectra of these highly crystalline particles are much sharper than any reported previously in the bulk, and reveal details in the N-H vibrational bands that have not been previously observed. A disordered phase is also observed at somewhat higher temperatures. These results are consistent with this being a supercooled liquid. The fact that the spectra associated with these two aerosol phases are quite different is important to any future attempts at detecting hydrazine aerosols in planetary atmospheres by remote sensing techniques.
Melting point, melting range, and crystallinity of extended-chain copolymer crystals
A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities. The process can be iterated and the mask translated to further improve the quality of grown layers.
Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.
An outline is given listing the speeches given in each session and the pertinent points is some speeches. There were six session, besides the overview session they were: (1) high efficiency concepts; (2) surface/interface effects; (3) bulk effects; (4) modeling; and (5) high efficiency device processing. Besides the emphasis placed on increasing efficiency of energy conversion, a great amount of discussion was spent on ways to reduce recombination and reducing surface defects.
A review of the entire research program since its inception ten years ago is given. The initial effort focused on the effects of impurities on the efficiency of silicon solar cells to provide figures of maximum allowable impurity density for efficiencies up to about 16 to 17%. Highly accurate experimental techniques were extended to characterize the recombination properties of the residual imputities in the silicon solar cell. A numerical simulator of the solar cell was also developed, using the Circuit Technique for Semiconductor Analysis. Recent effort focused on the delineation of the material and device parameters which limited the silicon efficiency to below 20% and on an investigation of cell designs to break the 20% barrier. Designs of the cell device structure and geometry can further reduce recombination losses as well as the sensitivity and criticalness of the fabrication technology required to exceed 20%. Further research is needed on the fundamental characterization of the carrier recombination properties at the chemical impurity and physical defect centers. It is shown that only single crystalline silicon cell technology can be successful in attaining efficiencies greater than 20%.
High shear flow of partially crystalline polyethylene
X-ray astronomy critically depends on X-ray optics. The capability of an X-ray telescope is largelydetermined by the point-spread function (PSF) and the photon-collection area of its mirrors, the same astelescopes in other wavelength bands. Since an X-ray telescope must be operated above the atmosphere inspace and that X-rays reflect only at grazing incidence, X-ray mirrors must be both lightweight and thin, bothof which add significant technical and engineering challenge to making an X-ray telescope. In this paper wereport our effort at NASA Goddard Space Flight Center (GSFC) of developing an approach to making an Xraymirror assembly that can be significantly better than the mirror assembly currently flying on the ChandraX-ray Observatory in each of the three aspects: PSF, effective area per unit mass, and production cost per uniteffective area. Our approach is based on the precision polishing of mono-crystalline silicon to fabricate thinand lightweight X-ray mirrors of the highest figure quality and micro-roughness, therefore, having thepotential of achieving diffraction-limited X-ray optics. When successfully developed, this approach will makeimplementable in the 2020s and 2030s many X-ray astronomical missions that are currently on the drawingboard, including sounding rocket flights such as OGRE, Explorer class missions such as STAR-X andFORCE, Probe class missions such as AXIS, TAP, and HEX-P, as well as large missions such as Lynx.
Superheating crystallization of ethylene- propylene and ethylene-butene-1 copolymers and extended chain morphology
The purity and perfection of a semiconductor is improved by depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities.
The effects of interfacial barriers in crystalline silicon solar cells were studied. The effort was directed toward the investigation and use of such techniques as Angular Resolved Parameter Spectroscopy (ARAPS) and Impedance Spectroscopy in initially characterizing n-type Si doped to levels commonly used for n+p solar cells, and eventually Si solar cells. The objectives of the research are given. Those accomplished are detailed, as are recommendations for future work.
The factors which may limit current crystalline silicon solar cells to less than 20 percent efficiency at AM 1 are investigated together with the factors which may limit the ultimate efficiency achievable. It was found that base recombination at residual defect and impurity recombination centers was the likely cause of the 20-percent efficiency barrier. Suggestions for design changes that would cut the losses due to recombinations are presented.
Kinetic energy of atomic motions for vitreous and crystalline high polymers measured by differential scanning calorimetry and thermal analysis