Results for “high open-circuit voltage”

NASA NTRS1983

Relationship between the blue response and open-circuit voltage of high performance silicon solar cells

The relationship between the response at blue wavelengths and the open-circuit voltage of high performance silicon solar cells with a virtually 'transparent' emitter is analyzed. It is shown that a one-dimensional cell model cannot simultaneously model the optical collection properties and operating characteristics of such cells. The analysis highlights the importance of surface conditions and shows that previous conclusions regarding bounds on Auger coefficients imposed by correlating these parameters must be treated with caution.

Green, M. A.↗

NASA NTRS1973

A new electric field effect in silicon solar cells.

The phenomenon of high-resistivity silicon solar cells manifesting high open-circuit voltages previously observed only for cells made from low-resistivity silicon is shown to be caused by the presence of a shallow diffused region at the back surface of the cell. The basic cell structure is either n+, p, p+ or p+, n, n+. The high open-circuit voltage arises from the injection and accumulation of excess majority carriers in the bulk upon illumination or application of forward bias to the structure. A working model for the cell, designated a back surface field (BSF) cell, is described, and recent developments are cited.

Mandelkorn, J.↗

NASA NTRS1973

Design, fabrication and characteristics of new types of back surface field cells

Several new types of back surface field (BSF) cells were designed and fabricated. These include boron and phosphorus diffused BSF cells, single crystal epitaxially grown BSF cells and chemically vapor deposited (CVD) polycrystalline BSF cells. Boron diffusion yielded 10 ohm-cm BSF cells with 0.6 volt open-circuit voltages and collection efficiencies equal to those previously reported for aluminum alloying. The epitaxially grown cells also exhibited high open-circuit voltages and collection efficiencies and may be more radiation damage resistant. The polycrystalline cells had very high internal series resistance. No direct relationship was found to exist between collection efficiency and open-circuit voltage, V sub oc in BSF cells. Results indicate that the V sub oc effect is not caused simply by the mechanism of blocking of minority carriers.

Mandelkorn, J.↗

NASA NTRS1974

Design, fabrication and characteristics of new types of back surface field cells

Several new types of back surface field (BSF) cells were designed and fabricated. These include boron and phosphorus diffused BSF cells, single crystal epitaxially grown BSF cells and chemically vapor deposited (CVD) polycrystalline BSF cells. Boron diffusion yielded 10 ohm-cm BSF cells with 0.6 volt open-circuit voltages and collection efficiencies equal to those previously reported for aluminum alloying. The epitaxially grown cells also exhibited high open-circuit voltages and collection efficiencies and may be more radiation damage resistant. The polycrystalline cells had very high internal series resistance. No direct relationship was found to exist between collection efficiency and open-circuit voltage in BSF cells.

Mandelkorn, J.↗

NASA NTRS1972

Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells

An investigation of the characteristics and behavior of 10 ohm-cm silicon cells having abnormally high open-circuit voltages was made. The cells studied were made by a new, highly simplified, contact fabrication process which creates both a contact and a thin electric field region at the cell back surface without the need for phosphorus layer removal. These cells had open-circuit voltages of about 0.58 V and their performance as a function of thickness, temperature, and 1 MeV electron irradiation is detailed. The study showed that 10 ohm-cm back-surface-field cells can have the high initial efficiencies and desirable temperature behavior of low resistivity cells. Thin back-surface-field cells were made and showed, in addition, much greater radiation damage resistance. A mechanism is proposed to explain the results.

Mandelkorn, J.↗

NASA NTRS1972

Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells.

An investigation of the characteristics and behavior of 10 ohm-cm silicon cells having abnormally high open-circuit voltages was made. The cells studied were made by a new, highly simplified, contact fabrication process which creates both a contact and a thin electric field region at the cell back surface without the need for phosphorus layer removal. These cells had open-circuit voltages of about 0.58 V and their performance as a function of thickness, temperature, and 1 MeV electron irradiation is detailed. The study showed that 10 ohm-cm back-surface-field cells can have the high initial efficiencies and desirable temperature behavior of low resistivity cells. Thin back-surface-field cells were made and showed, in addition, much greater radiation damage resistance. A mechanism is proposed to explain the results.

Mandelkorn, J.↗

NASA NTRS1974

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

Godlewski, M. P.↗

NASA NTRS1975

Effects of high doping levels on silicon solar cell performance

Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗

NASA NTRS1976

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells

The observed low open-circuit voltage in 0.1 Ohm-cm solar cells is probably related to an excessively high diode saturation current. Theoretical studies conducted by Lindholm et al. (1975) and by Godlewski et al. (1975) have shown that a high saturation current could be produced by either high recombination rates or bandgap narrowing effects. A description is given of an investigation which shows that bandgap narrowing effects have a first order significance in determining the charge carrier transport controlling the open-circuit voltage of 0.1 Ohm-cm silicon solar cells.

Godlewski, M. P.↗

NASA NTRS1976

Efficient photovoltaic heterojunctions of indium tin oxides on silicon

Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60

Dubow, J. B.↗

NASA NTRS1975

Effects of high doping levels silicon solar cell performance

The significance of the heavy doping effects (HDE) on the open-circuit voltage of silicon solar cells is assessed. Voltage calculations based on diffusion theory are modified to include the first order features of the HDE. Comparisions of the open-circuit voltage measured for cells of various base resistivities are made with those calculated using the diffusion model with and without the HDE. Results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AM0) and a voltage of 0.7 volts are calculated for 0.1 omega-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗

NASA NTRS1977

Factors affecting the open-circuit voltage and electrode kinetics of some iron/titanium/redox flow cells

The effect of acid concentration on the performance of the iron-titanium redox flow cell was studied. When the acidity was increased, open-circuit voltages decreased on the titanium side but load voltages increased due to decreased polarization. The best load voltage occurs when there is high acidity on the titanium side coupled with low acidity on the iron side, but such cells show voltage losses with repeated cycling because of the diffusion of acid through the membrane. No membrane tested has been found capable of maintaining the differences in acidity. Chelating agents show some promise in reducing polarization at the Ti electrode and thus improving energy efficiency.

Reid, M. A.↗

NASA NTRS1975

Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cells

Fundamental limitations imposed on the performance of silicon junction solar cells by physical mechanisms accompanying high doping are described. The one-dimensional mechanisms divide into two broad categories: those associated with band-gap shrinkage and those associated with interband transition rates. By extending the traditional method of analysis and comparing with measurement, it is shown that the latter kind of mechanism dominates in determining the open-circuit voltage in a one-dimensional model of a 0.1 ohm-cm cell at 300 K. As an alternative dominant mechanism, a three-dimensional model involving thermodynamically stable clusters of impurities in the highly-doped diffused layer is suggested.

Lindholm, F. A.↗

NASA NTRS1972

Voltage and power relationships in lithium-containing solar cells.

Photovoltaic characteristics have been measured on a large number of crucible-grown lithium-containing solar cells irradiated by 1-MeV electrons to fluences ranging from 3 x 10 to the 13th power to 3 x 10 to the 15th power electrons per sq cm. These measurements have established empirical relationships between cell photovoltaic parameters and lithium donor density gradient. Short-circuit current and maximum power measured immediately after irradiation decrease logarithmically with lithium gradient. Open-circuit voltage increases logarithmically with lithium gradient both immediately after irradiation and after recovery, the degree of recovery being strongly gradient-dependent at high fluence. As a result, the maximum power and the power at 0.43 V after recovery from 3 x 10 to the 15th power electrons per sq cm increase with increasing lithium gradient.

Faith, T. J.↗

NASA NTRS1975

Evaluation program for secondary spacecraft cells: Initial evaluation tests of Gulton Industries, Incorporated, 9.0 ampere-hour nickel-cadmium spacecraft cells with auxiliary electrodes for the small astronomy Satellite (SAS-C)

An evaluation test program was conducted to insure that all cells put into the life cycle program are of high quality by the screening of cells found to have electrolyte leakage, internal shorts, low capacity, or inability of any cell to recover its open-circuit voltage above 1.150 volts during the internal short test. Tests and results are described.

Harkness, J. D.↗

NASA NTRS1975

Epitaxial solar cells fabrication

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

Daiello, R. V.↗

NASA NTRS1976

Evaluation program for secondary spacecraft cells: Initial evaluation tests of General Electric Company 12.0 ampere-hour nickel-cadmium spacecraft cells for the international ultraviolet explorer

An evaluation test program was conducted to insure that all cells put into the life cycle program are of high quality by the screening of cells found to have electrolyte leakage, internal shorts, low capacity, or inability of any cell to recover its open-circuit voltage above 1.150 volts during the internal short test. The 20 cells were manufactured for the National Aeronautics and Space Administration, Goddard Space Flight Center (GSFC). The cells are from a lot of 175 cells procured for the International Ultraviolet Explorer project. Due to a change in requirements, the project selected to use 6.0 ampere-hour cells. Therefore, the remaining cells of this lot have been placed in storage at GSFC for use on a future GSFC project. All the cells are rated at 12.0 ampere-hours and contain double ceramic seals. Test limits specify those values in which a cell is to be terminated from a particular charge or discharge. Requirements are referred to as normally expected values based on past performance of aerospace nickel cadmium cells with demonstrated life characteristics.

Harkness, J. D.↗

NASA NTRS1973

Evaluation program for secondary spacecraft cells. Initial evaluation tests of Eagle-Picher Industries, Incorporated 3.0 ampere-hour nickel-cadmium spacecraft cells

The capacity of the cells ranged from 3.58 to 3.97 amperehours during the three capacity tests. Three cells were removed from test, due to high pressure, during the C/10, 24-hour charge at room ambient temperature. The voltage requirement of 1.480 volts was exceeded by the cells during the C/10, 24-hour charge at 20 C, although the end-of-charge voltage was below this value (1.466-1.475 volts). Average capacity out during the 20 C charge efficiency test was 0.84 AH which represents 48% and is below the minimum requirement of 55%. The cells exhibited no pressure decay during the open-circuit stand portion of the pressure versus capacity test, as all cells reached their voltage limit (1.550 volts) before their pressure reached 20 psia with the highest pressure being 8 psia during charge.

Harkness, J. D.↗