Search NASA⌕ Search

SEARCH · Search NASA

Results for “high performance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records

Co-Percolating Graphene-Wrapped Silver Nanowire Network for High Performance, Highly Stable, Transparent Conducting Electrodes

Transparent conducting electrodes (TCEs) require high transparency and low sheet resistance for applications in photovoltaics, photodetectors, flat panel displays, touch screen devices and imagers. Indium tin oxide (ITO), or other transparent conductive oxides, have typically been used, and provide a baseline sheet resistance (RS) vs. transparency (T) relationship. However, ITO is relatively expensive (due to limited abundance of Indium), brittle, unstable, and inflexible; moreover, ITO transparency drops rapidly for wavelengths above 1000 nm. Motivated by a need for transparent conductors with comparable (or better) RS at a given T, as well as flexible structures, several alternative material systems have been investigated. Single-layer graphene (SLG) or few-layer graphene provide sufficiently high transparency (≈97% per layer) to be a potential replacement for ITO. However, large-area synthesis approaches, including chemical vapor deposition (CVD), typically yield films with relatively high sheet resistance due to small grain sizes and high-resistance grain boundaries (HGBs). In this paper, we report a hybrid structure employing a CVD SLG film and a network of silver nanowires (AgNWs): RS as low as 22 Ω/ (stabilized to 13 Ω/ after 4 months) have been observed at high transparency (88% at λ = 550 nm) in hybrid structures employing relatively low-cost commercial graphene with a starting RS of 770 Ω/. This sheet resistance is superior to typical reported values for ITO, comparable to the best reported TCEs employing graphene and/or random nanowire networks, and the film properties exhibit impressive stability under mechanical pressure, mechanical bending and over time. The design is inspired by the theory of a co-percolating network where conduction bottlenecks of a 2D film (e.g., SLG, MoS2) are circumvented by a 1D network (e.g., AgNWs, CNTs) and vice versa. The development of these high-performance hybrid structures provides a route towards robust, scalable and low-cost approaches for realizing high-performance TCE.

36 MATERIALS SCIENCE↗

High-Performance High-Loading Lithium-Sulfur Batteries by Low Temperature Atomic Layer Deposition of Aluminum Oxide on Nanophase S Cathodes

This study examines the effects of nanophase S and surface coatings via atomic layer deposition (ALD) on high-loading sulfur cathodes for developing high-performance and high-energy lithium-sulfur (Li-S) batteries. It is first verified that ball milling is an effective and facile route for nanoengineering microsized S powders and the resultant nanoscale S particles exhibit better performance. Using these ball milled nanoscale S cathodes, it is found that ALD Al2O3 performed at 50 degrees C yields deposits that evolve with ALD cycles from dispersed nanoparticles, to porous, connected films, and finally to dense and continuous films. Moreover, this low temperature ALD process suppresses S loss by sublimation. The ALD Al2O3 greatly improves sulfur cathode sustainable capacity and Coulombic efficiency. This study postulates two different mechanisms underlying the effects of ALD Al2O3 surface coatings depending on their morphology. ALD Al2O3 nanoparticles dispersed on the sulfur surface mainly function to adsorb polysulfides, thereby inhibiting S shuttling and improving sustainable capacity and Coulombic efficiency. By contrast, ALD Al2O3 films behave as a physical barrier to prevent polysulfides from contacting the liquid electrolyte and dissolving. The dispersed Al2O3 nanoparticles improve both sustainable capacity and Coulombic efficiency while the closed Al2O3 films improve Coulombic efficiency while decreasing the capacity

25 ENERGY STORAGE↗

Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)

4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.

42 ENGINEERING↗

Integration of tools for the Design and Assessment of High-Performance, Highly Reliable Computing Systems (DAHPHRS), phase 1

Systems for Space Defense Initiative (SDI) space applications typically require both high performance and very high reliability. These requirements present the systems engineer evaluating such systems with the extremely difficult problem of conducting performance and reliability trade-offs over large design spaces. A controlled development process supported by appropriate automated tools must be used to assure that the system will meet design objectives. This report describes an investigation of methods, tools, and techniques necessary to support performance and reliability modeling for SDI systems development. Models of the JPL Hypercubes, the Encore Multimax, and the C.S. Draper Lab Fault-Tolerant Parallel Processor (FTPP) parallel-computing architectures using candidate SDI weapons-to-target assignment algorithms as workloads were built and analyzed as a means of identifying the necessary system models, how the models interact, and what experiments and analyses should be performed. As a result of this effort, weaknesses in the existing methods and tools were revealed and capabilities that will be required for both individual tools and an integrated toolset were identified.

Scheper, C.↗

Fast ion studies in the extended high-performance high β P plasma on EAST

Comprehending and optimizing fast ion behaviors is critical for the enhancement of performance in Experimental Advanced Superconducting Tokamak (EAST). This study explores the potential benefits of several factors that can improve the fast ion confinement. First, experiments show the change in the direction of the NBI2 from counter-I p to co-I p leads to a significant reduction in fast ion losses. TRANSP/NUBEAM simulation and tomography results based on fast-ion D-alpha measurements reveal that after the neutral beam injection (NBI) upgrade, the beam ion prompt loss is reduced by approximately 50%. Second, the upgraded ion cyclotron resonant frequency (ICRF) antenna at the N-port features twice the coupling resistance of the original antennas at EAST. This improved ICRF power coupling has enhanced the synergistic heating effect of NBI + ICRF, where the ICRF wave field accelerates beam ions at the harmonics. Experiments demonstrate that NBI + ICRF synergistic not only enhances plasma neutron yield and β P , but also accelerates beam ions to hundreds of keV. Further, the electron density and the neutral beam voltage have been optimized to reduce the fast ion slowing-down time and beam ion losses. Experimental and simulation results indicate that increasing the electron density reduces beam ion losses and enhances the bootstrap current fraction. While higher beam voltage results in a slight decrease in beam power absorption, it can increase the fraction of bootstrap current. With the understanding of these optimization of fast ion confinement, experiments have demonstrated fully non-inductive operation at high density (n e /n G ∼ 0.67, β P ∼ 3.1, β N ∼ 2.1, H 98,y2 ∼ 1.2) even without the support of co-I p beam NBI2. This investigation presents a potential regime to enhance fast ion confinement and extend performance in the high β P plasma for future experiments.

EAST tokamak↗

Ti‐Gradient Doping to Stabilize Layered Surface Structure for High Performance High‐Ni Oxide Cathode of Li‐Ion Battery

Abstract High‐Ni layered oxide cathodes are considered to be one of the most promising cathodes for high‐energy‐density lithium‐ion batteries due to their high capacity and low cost. However, surfice residues, such as NiO‐type rock‐salt phase and Li 2 CO 3 , are often formed at the particle surface due to the high reactivity of Ni 3+ , and inevitably result in an inferior electrochemical performance, hindering the practical application. Herein, unprecedentedly clean surfaces without any surfice residues are obtained in a representative LiNi 0.8 Co 0.2 O 2 cathode by Ti‐gradient doping. High‐resolution transmission electron microscopy (TEM) reveals that the particle surface is composed of a disordered layered phase (≈6 nm in thickness) with the same rhombohedra structure as its interior. The formation of this disordered layered phase at the particle surface is electrochemically favored. It leads to the highest rate capacity ever reported and a superior cycling stability. First‐principles calculations further confirm that the excellent electrochemical performance has roots in the excellent chemical/structural stability of such a disordered layered structure, mainly arising from the improved robustness of the oxygen framework by Ti doping. This strategy of constructing the disordered layered phase at the particle surface could be extended to other high‐Ni layered transition metal oxides, which will contribute to the enhancement of their electrochemical performance.

Kong, Defei↗

High Performance, High Fidelity: A GPU‐Accelerated Doubly‐Periodic Configuration of the Simple Cloud‐Resolving E3SM Atmosphere Model Version 1 (DP‐SCREAMv1)

The development of the Simplified Cloud Resolving Energy Exascale Earth System Atmosphere Model (SCREAMv1) enables global storm-resolving simulations on modern GPU-based supercomputers. However, the high computational cost of SCREAMv1 limits its routine use for process-level studies, creating a need for efficient proxy configurations. This study addresses this gap by introducing DP-SCREAMv1, a doubly periodic cloud-resolving model designed to be fully consistent with SCREAMv1 while enabling high-resolution, long-duration simulations at significantly reduced computational expense by simulating a limited doubly periodic domain rather than the entire globe. Built on a C++/Kokkos architecture, DP-SCREAMv1 achieves exceptional performance scalability on GPU systems and includes a rich library of cases for validation and scientific exploration. In this work, we demonstrate short wall-clock times at SCREAMv1's default resolution and show that DP-SCREAMv1 supports routine execution of large-domain, high-resolution experiments that were previously challenging in practice. Furthermore, we show that DP-SCREAMv1 enables routine execution of “Giga-LES” style simulations and facilitates large-domain, high-resolution simulations that were recently considered burdensome to perform. These results document an efficient, fully consistent process-level configuration for SCREAMv1 (DP-SCREAMv1) and illustrate its use for long-duration and large-domain experiments at cloud-resolving to eddy-permitting resolution.

Environmental sciences↗

High performance, high density hydrocarbon fuels

The fuels were selected from 77 original candidates on the basis of estimated merit index and cost effectiveness. The ten candidates consisted of 3 pure compounds, 4 chemical plant streams and 3 refinery streams. Critical physical and chemical properties of the candidate fuels were measured including heat of combustion, density, and viscosity as a function of temperature, freezing points, vapor pressure, boiling point, thermal stability. The best all around candidate was found to be a chemical plant olefin stream rich in dicyclopentadiene. This material has a high merit index and is available at low cost. Possible problem areas were identified as low temperature flow properties and thermal stability. An economic analysis was carried out to determine the production costs of top candidates. The chemical plant and refinery streams were all less than 44 cent/kg while the pure compounds were greater than 44 cent/kg. A literature survey was conducted on the state of the art of advanced hydrocarbon fuel technology as applied to high energy propellents. Several areas for additional research were identified.

Frankenfeld, J. W.↗

High Performance High Temperature Thermoelectric Composites with Metallic Inclusions

The present invention provides a composite thermoelectric material. The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. The present invention also provides a method of forming this composite thermoelectric material.

Ma, James M.↗

High performance, high durability non-precious metal fuel cell catalysts

This invention relates to non-precious metal fuel cell cathode catalysts, fuel cells that contain these catalysts, and methods of making the same. The fuel cell cathode catalysts are highly nitrogenated carbon materials that can contain a transition metal. The highly nitrogenated carbon materials can be supported on a nanoparticle substrate.

30 DIRECT ENERGY CONVERSION↗

Halide and Oxy-halide Eutectic Systems for High Performance High Temperature Heat Transfer Fluids

This report presents the work of developing a high temperature heat transfer and thermal storage fluid using low-cost chlorides salts as the basic components. Eutectic mixture of two or three chlorides salts could form a molten salt that can meet the expectation of low freezing point, high boiling point, and low corrosion to high temperature metals. The report includes two parts. Part-A presents the important principles of selecting appropriate constituent chloride salts for the eutectic mixture to have desired thermophysical properties and low corrosion to high temperature metals. Some selections of salt mixtures are listed for theoretical and experimental studies. Thermal and transport properties and heat transfer of four selected mixtures of chloride salts are presented at the end of Part-A. Detailed studies to the corrosion mechanism/behavior of metals in the selected salt mixture at high temperatures are presented in Part-B. Conditioning and purification to the salts are also introduced in Part-B, which is critical to keep the selected chloride salts to have low corrosion to metals at high temperatures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗