Search NASA⌕ Search

SEARCH · Search NASA

Results for “high temperature electronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

High-temperature electronic structure with the Korringa-Kohn-Rostoker Green's function method [High Temperature Electronic Structure with KKR]

Modeling high-temperature (tens or hundreds of eV), dense plasmas is challenging due to the multitude of non-negligible physical effects including significant partial ionization and multisite effects. These effects cause the breakdown or intractability of common methods and approximations used at low temperatures, such as pseudopotentials or plane-wave basis sets. Here we explore the Korringa-Kohn-Rostoker Green's function method at these high-temperature conditions. The method is all electron, does not rely on pseudopotentials, and uses a spherical harmonic basis set, and so avoids the aforementioned limitations. Finally, it is found to be accurate for solid density aluminum and iron plasmas when compared to a plane-wave method at low temperature, while being able to access high temperatures.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Search for extremely metal-poor galaxies in the Sloan Digital Sky Survey. II. High electron temperature objects

Extremely metal-poor (XMP) galaxies are defined to have a gas-phase metallicity smaller than a tenth of the solar value (12+log[O/H]<7.69). They are uncommon, chemically and possibly dynamically primitive, with physical conditions characteristic of earlier phases of the universe. We search for new XMPs in the Sloan Digital Sky Survey (SDSS) in a work that complements Paper I. This time, high electron temperature objects are selected; metals are a main coolant of the gas, so metal-poor objects contain high-temperature gas. Using the algorithm k-means, we classify 788,677 spectra to select 1281 galaxies that have particularly intense [O iii]λ4363 with respect to [O iii]λ5007, which is a proxy for high electron temperature. The metallicity of these candidates was computed using a hybrid technique consistent with the direct method, rendering 196 XMPs. A less restrictive noise constraint provides a larger set with 332 candidates. Both lists are provided in electronic format. The selected XMP sample has a mean stellar mass around 10{sup 8} M{sub ⊙}, with the dust mass ∼10{sup 3}M{sub ⊙} for typical star-forming regions. In agreement with previous findings, XMPs show a tendency to be tadpole-like or cometary. Their underlying stellar continuum corresponds to a fairly young stellar population (<1 Gyr), although young and aged stellar populations coexist at the low-metallicity starbursts. About 10% of the XMPs show large N/O. Based on their location in constrained cosmological numerical simulations, XMPs have a strong tendency to appear in voids and to avoid galaxy clusters. The puzzling 2%-solar low-metallicity threshold exhibited by XMPs remains.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2015

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

MOSFETs based on wide-band-gap semiconductors are suitable for operation at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated, resulting in device degradation. Recently, significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150 °C. Here, we report first-principles calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO{sub 2} by which the vacancy transforms into a structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Validity of Eucken formula and Stokes’ viscosity relation in high-temperature electronically excited gases

In the present work we evaluate the accuracy of the Eucken formula and Stokes’ viscosity relation in high temperature non-equilibrium air species with electronic excitation. The thermal conductivity coefficient calculated using the exact kinetic theory methods is compared with that obtained applying approximate formulas in the temperature range 200–20000 K. A modification of the Eucken formula providing a good agreement with exact calculations is proposed. It is shown that the Stokes viscosity relation is not valid in electronically excited monoatomic gases at temperatures higher than 2000 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature

The electron spin dynamics in n-doped bulk cubic GaN is investigated for very high temperatures from 293 K up to 500 K by time-resolved Kerr-rotation spectroscopy. We find extraordinarily long spin lifetimes exceeding 1 ns at 500 K. The temperature dependence of the spin relaxation time is in qualitative agreement with predictions of Dyakonov-Perel theory, while the absolute experimental times are an order of magnitude shorter than predicted. Possible reasons for this discrepancy are discussed, including the role of phase mixtures of hexagonal and cubic GaN as well as the impact of localized carriers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Electrical, structural and thermomechanical properties of doped-LaCrO3 ceramics for high temperature electronics and sensing applications.

Many important electrical and sensor applications require stable conductors under working temperatures up to 1500oC various redox environments. Common high temperature conductors such as nitrides and carbides are not stable under oxidizing atmospheres, for this reason low redox behavior materials would be more attractive. In this work, further dopant studies of the LaCrO3 system were completed in order to control the electronic and ionic conductivity, as well as the relative chemical and microstructural stability. Neodymium and Niobium dopants were initially studied to control the p-type, and potentially n-type conductive mechanisms, respectively, but other dopants strategies were also investigated. The electrical conductivity and Seebeck coefficient were characterized up to 1500oC under varying oxygen partial pressures. The phase and microstructural evolution of each material was also investigated for these compositions by XRD and SEM. The materials showing the best electrical and thermomechanical performance were included within thick films sensors and were tested.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2023

AlGaN High Electron Mobility Transistor for High-Temperature Logic

Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.

42 ENGINEERING↗
DOE OSTI2018

Time-dependent orbital-free density functional theory for electronic stopping power: Comparison to the Mermin-Kohn-Sham theory at high temperatures

Electronic stopping power in warm dense matter can affect energy transport and heating in astrophysical processes and internal confinement fusion. For cold condensed matter systems, stopping power can be modeled from first-principles using real-time time-dependent density functional theory (DFT). However, high temperatures (10's to 100's of eV) may be computationally prohibitive for traditional Mermin-Kohn-Sham DFT. New experimental measurements in the warm dense regime motivates the development of first-principles approaches, which can reach these temperatures. Here, we have developed a time-dependent orbital-free density functional theory, which includes a novel nonadiabatic and temperature-dependent kinetic energy density functional, for the simulation of stopping power at any temperature. The approach is nonlinear with respect to the projectile perturbation, includes all ions and electrons, and does not require a priori determination of screened interaction potentials. Finally, our results compare favorably with Kohn-Sham for temperatures in the WDM regime, especially nearing 100 eV.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Assessment of SiC-CMC compatibility with components of actinide fuel systems

Silicon carbide (SiC) fiber reinforced SiC ceramic matrix composites (CMC) represent an alternative cladding material for accident tolerant fuel light water reactor (LWR) applications, however, data and technology gaps exist that need to be understood before SiC-CMCs can be considered. One technology gap is the understanding of fuel-clad chemical interactions (FCCI) in SiC-CMC clad LWR systems. A review of SiC interactions with relevant elements to the LWR fuel system is discussed. Insights are drawn from research focusing on the use of SiC for high temperature electronics applications and high temperature structural materials applications as well as insights from tristructural-isotropic (TRISO) coated particle fuel development, where SiC is a critical component of the TRISO design. The interactions discussed in this review are framed relative to the expected conditions for SiC-CMC cladding application. Furthermore, the general observation is that limited risk of FCCI exists under normal operating conditions for SiC-CMC cladding systems in LWR applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2015

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Air-Cooled Heat Exchanger for High-Temperature Power Electronics: Preprint

This work demonstrates a direct air-cooled heat exchanger strategy for high-temperature power electronic devices with an application specific to automotive traction drive inverters. We present experimental heat dissipation and system pressure curves versus flow rate for baseline and optimized sub-module assemblies containing two ceramic resistance heaters that provide device heat fluxes. The maximum allowable junction temperature was set to 175 deg.C. Results were extrapolated to the inverter scale and combined with balance-of-inverter components to estimate inverter power density and specific power. The results exceeded the goal of 12 kW/L and 12 kW/kg for power density and specific power, respectively.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

A MEMS Gyroscope for Reliable Long Duration Measurement While Drilling at 300°C

The 300°C Microelectromechanical system (MEMS) gyroscope project aims to contribute to DOE’s goal of increased geothermal drilling efficiency by 2025 through the development of a 300°C MEMS gyroscope for Measurement While Drilling (MWD). At the conclusion of the 2-year project, the team will develop a 300°C capable MEMS gyroscope containing GE’s patented Multi-Ring Gyroscope Transducer (MRGT) design, custom Silicon-On-Insulator (SOI) based frontend and feedback control electronics, and with demonstrated functionality and lifetime beyond 1000 hours. The project is divided into two budget periods with Go/No-Go decision at the end of the first budget period. The goal for the first budget period is to establish the feasibility of the MRGT and electronics design for meeting the 300°C performance requirements. The goal for the second budget period is to integrate the MRGT with the SOI-based application specific integrated circuit (ASIC) and demonstrate capability to operate at 300°C for 1000 hours. In Budget Period 1 we met the phase 1 goal. We successfully validated the combined MRG, electronics and packaging capability entitlement to achieving 0.5 degrees azimuth uncertainty while enabling operation at significantly higher temperatures than the state-of-the-art. In Budget Period 2, we successfully completed the integration of the MRGT and ASIC with associated high temperature, high reliability packaging to demonstrate the performance and functionality of the integrated gyroscope across the temperature range from room temperature to at 300°C. Furthermore, the team demonstrated operating life of >1,000 hours at 300°C, thus providing a validation of application-relevant lifetime capability.

15 GEOTHERMAL ENERGY↗
DOE OSTI2015

Analysis based on global model of nitrogen plasma produced by pulsed microwave at low pressure

This paper analyzes certain evolution processes in nitrogen plasmas discharged using pulsed microwaves at low pressure. Comparing the results obtained from the global model incorporating diffusion and the microwave transmission method, the temporal variation of the electron density is analyzed. With a discharge pressure of 300 Pa, the results obtained from experiments and the global model calculation show that when the discharge begins the electron density in the plasma rises quickly, to a level above the critical density corresponding to the discharge microwave frequency, but falls slowly when the discharge microwave pulse is turned off. The results from the global model also show that the electron temperature increases rapidly to a peak, then decays after the electron density reaches the critical density, and finally decreases quickly to room temperature when the discharge microwave pulse is turned off. In the global model, the electron density increases because the high electron temperature induces a high ionization rate. The decay of the electron density mainly comes from diffusion effect.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Sub-Degree-Per-Hour MEMS Gyroscope for Measurement While Drilling at 300°C

The orientation module of MWD tool offers the critical drill bit orientation information, including azimuth, inclination and toolface in order to control the path of wellbore. Although high end navigation grade gyroscope can meet the accuracy requirement for azimuth finding, the requirements of cost, size and reliability under harsh environment have largely limited the deployment of gyroscopes in MWD tools. To overcome these constraints, GE Research has developed a low cost, MEMS based Multi-Ring Gyroscope (MRG) capable of azimuth-seeking in MWD applications at 300°C. The MRG prototype has been demonstrated to achieve angular random walk (ARW) better than 0.003 deg/rt(hr) and bias instability of 0.01 deg/hr, capable of meeting azimuth finding accuracy better than 0.25 deg. It has further been tested to remain fully operational at 300 °C.

15 GEOTHERMAL ENERGY↗
DOE OSTI2026

Electron Correlation and High-Temperature Superconductivity

Strong electron correlation plays a central role in the high-temperature superconductivity (HTSC) of cuprates. However, to date, research has focused only on its role in spin dynamics and related effects, even though it is becoming increasingly clear that spin alone may not be sufficient to create HTSC. Here, we discuss a possible role of electron correlation in the Bose–Einstein condensation (BEC) of Cooper pairs. Recently, we succeeded in observing dynamic electron correlation via inelastic X-ray scattering through results presented in real space. We discovered that electron correlations are strongly modified in the plasmon, proving that electron dynamics significantly affect electron correlation. Earlier, we found that in 4 He, the atom–atom distance in the BE condensate is 10% longer than that in the non-condensate. These results suggest the possibility that the reduction in electron-repulsion energy upon BEC is driving T c to high values. Thus, electron correlation itself could be the origin of the HTSC phenomenon.

Bose–Einstein condensation↗