Fabrication of the First Lead and Depleted Uranium Laser Entrance Hole (LEH) Inserts for the Viewfactor Campaign
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Minimum feature size control in level set topology optimization via density fields
A level set topology optimization approach that uses an auxiliary density field to nucleate holes during the optimization process and achieves minimum feature size control in optimized designs is explored. The level set field determines the solid-void interface and the density field describes the distribution of a fictitious porous material using the solid isotropic material with penalization. These fields are governed by two sets of independent optimization variables which are initially coupled using a penalty for hole nucleation. The strength of the density field penalization and projection is gradually increased during the optimization process to promote a 0-1 density distribution. In addition, a second penalty regulates the evolution of the density field in the void phase. The treatment of the density field combined with the second penalty mitigate the appearance of small design features. The minimum feature size of optimized designs is controlled by the radius of the linear filter applied to the density optimization variables. The structural response is predicted by the extended finite element method, the sensitivities by the adjoint method, and the optimization variables are updated by a gradient-based optimization algorithm. Numerical examples investigate the robustness of this approach with respect to algorithmic parameters and mesh refinement. The results show the applicability of the combined density level set topology optimization approach for both optimal hole nucleation and for minimum feature size control in 2D and 3D. This comes, however, at the cost of a more complex problem formulation and additional computational cost due to an increased number of optimization variables.
42 ENGINEERING↗
Distributed measurement of minimum and maximum in-situ stress in substrates
A system for performing distributed measurements of in-situ stress includes an expandable element with at least one fiber optic sensor. The expandable element can be positioned at various depths in a hole in a substrate. A pressurizing device expands (and contracts) the expandable element when the expandable element is inserted in the hole in the substrate to exert pressure on the hole wall. A pressure sensor provides a sensor output indicative of a pressure applied to the hole wall by the expandable element. The fiber optic sensor and an optical interrogator measure strain along a length of the sensor in a continuous, high spatial resolution manner Based on the measured strain and pressure sensor output, the system determines various properties of the substrate such as, minimum principal stress, maximum principal stress, and/or principal stress direction associated with one or more fractures in the substrate, as well as substrate modulus.
Ohanian, III, Osgar John↗
Interplay Between Stereochemically Active Lone Pair Repulsions, Sigma Hole Interactions, and Delocalized Redox Processes in Topochemical Fluoride‐Ion Insertion
Topochemical insertion/extraction of cations has emerged as a generalizable strategy for modulating the crystal and electronic structure of periodic solids. In contrast, strategies for topochemical anion insertion are poorly explored and fundamental principles for designing insertion hosts to accommodate anions remain scarce. Here, we observe reversible room-temperature fluoride-ion insertion within tunnels of Sn 2 TiO 4 defined by the stereochemical expression of Sn 5 s 2 lone pairs. X-ray scattering studies of fluoride-ion-insertion-induced crystal structure modulation and X-ray absorption/emission spectroscopy probes of electronic structure along with magnetic susceptibility measurements and first-principles calculations are used to decipher design principles underpinning reversible fluoride-ion insertion and bulk diffusion. Fluoride-ion insertion is enabled by a combination of a large, polarizable tunnel, delocalized redox at Ti─O─Sn centers, inherent repulsion between the fluoride-ion and Sn 5 s 2 electron lone pairs, and the formation of dative interactions between Sn-centered σ-holes and fluoride-ions, yielding a reversible capacity of 0.5 fluoride-ions per Sn 2 TiO 4 formula unit. Our results demonstrate that the complex interplay between dative interactions and stereochemically active lone pair repulsions is critical to defining the thermodynamics and kinetics controlling fluoride-ion insertion and diffusion. As such, the design of fluoride-ion insertion hosts for anion batteries requires site-selective modification to modulate lattice—ion interactions.
36 MATERIALS SCIENCE↗
Simulated impact of fill tube geometry on recent high-yield implosions at the National Ignition Facility
Inertial confinement fusion capsules fielded at the National Ignition Facility are filled with deuterium and tritium fuel by means of a fill tube. The fill tube introduces a low-density pathway into the fuel region of the capsule that allows high Z contaminant to invade the hot spot during the course of the implosion. A recent series of nominally identical high-yield implosions on the NIF has exhibited significant variability in performance. We evaluate the impact of the fill tube in these implosions computationally to determine whether variations in fill tube geometry could have contributed to this variability. The main contrast between the fill tube geometry in the six shots was the outer diameter of the capsule bore hole, a conical hole into which the fill tube is inserted. In our simulations, the geometry of the bore hole can play a significant role in the development of nonlinear flows seeded by the fill tube. Additionally, we find that the amount of space between the bore hole and the fill tube is the primary factor that determines the amount of contaminant jetted into the hot spot by the fill tube and, in turn, the level of yield reduction due to the fill tube in our simulations. As a consequence, some capsules with 5 μm fill tubes are predicted to outperform capsules with 2 μm fill tubes. We also find that micrometer-scale changes to bore hole size can impact fusion yields by up to four times near the ignition threshold. Nevertheless, simulation trends do not reproduce experimental yield trends, suggesting that the fill tube geometry was not the primary factor contributing to the observed variability in performance and that the fill tube could be masking sensitivity to other asymmetries such as other micrometer-scale capsule defects like voids that were not included in our simulations.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
A discussion on various experimental methods of impact ionization coefficient measurement in GaN
Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization coefficients in GaN, which are all based on photomultiplication but feature characteristic differences. The first method inserts an InGaN hole-injection layer, the accuracy of which is challenged by the dominance of ionization in InGaN, leading to possible overestimation of the coefficients. The second method utilizes the Franz–Keldysh effect for hole injection but not for electrons, where the mixed injection of induced carriers would require a margin of error. The third method uses complementary p–n and n–p structures that have been at the basis of this estimation in Si and SiC and leans on the assumption of a constant electric field, and any deviation would require a margin of error. In the second part of our study, we evaluated the models using recent experimental data from diodes demonstrating avalanche breakdown.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Spin-statistics for black hole microstates
The gravitational path integral can be used to compute the number of black hole states for a given energy window, or the free energy in a thermal ensemble. In this article we explain how to use the gravitational path integral to compute the separate number of bosonic and fermionic black hole microstates. We do this by comparing the partition function with and without the insertion of (–1) F . In particular we introduce a universal rotating black hole that contributes to the partition function in the presence of (–1) F. We study this problem for black holes in asymptotically flat space and in AdS, putting constraints on the high energy spectrum of holographic CFTs (not necessarily supersymmetric). Finally, we analyze wormhole contributions to related quantities.
79 ASTRONOMY AND ASTROPHYSICS↗
Design Principles for Efficient and Stable Water Splitting Photoelectrocatalysts
Photoelectrochemical water splitting is a promising avenue for sustainable production of hydrogen used in the chemical industry and hydrogen fuel cells. The basic components of most photoelectrochemical water splitting systems are semiconductor light absorbers coupled to electrocatalysts, which perform the desired chemical reactions. A critical challenge for the design of these systems is the lack of stability for the majority of desired semiconductors under operating water splitting conditions. One strategy to address this issue is to protect the semiconductor by covering it with a stabilizing insulator layer, creating a metal–insulator–semiconductor (MIS) architecture, which has demonstrated improved stability. In addition to enhanced stability, the insulator layer may significantly affect the electron and hole transfer, which governs the recombination rates. Furthermore, the insertion of an insulator layer leads to the introduction of additional insulator/electrocatalyst and insulator/semiconductor interfaces. These interfaces can impact the system’s performance significantly, and they need to be carefully engineered to optimize the efficiencies of MIS systems. In this Account, we describe our recent progress in shedding light on the critical role of the insulator and the interfaces on the performance of MIS systems. We discuss our findings by focusing on the concrete example of planar n-type Si protected by a HfO 2 insulator layer and coupled to a Ni or Ir electrocatalyst that performs the oxygen evolution reaction, one of the water splitting half-reactions. To improve our fundamental understanding of the insulator layer, we precisely control the HfO 2 insulator thickness using atomic layer deposition (ALD), and we perform a series of rigorous electrochemical experiments coupled with theory and modeling. We demonstrate that by tuning the insulator thickness, we can control the flux and recombination of photogenerated electrons and holes to optimize the generated photovoltage. Despite optimizing the thickness, we find that the maximum generated photovoltage in MIS systems is often significantly lower than the upper performance limit, i.e., there are additional losses in the system that could not be addressed by optimizing the insulator thickness. We identify the sources of these losses and describe strategies to minimize them by a combination of improving the semiconductor light absorption, removing nonidealities associated with interfacial defects, and finding alternative insulators with improved charge carrier selectivity. Finally, we quantify the improvements that can be obtained by implementing these specific strategies. Our collective work outlines strategies to analyze MIS systems, identify the sources of efficiency losses, and optimize the design to approach the fundamental performance limits. Furthermore, these general approaches are broadly applicable to photoelectrochemical materials that utilize sunlight to produce value-added chemicals.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Design of InGaN-ZnSnGa 2 N 4 quantum wells for high-efficiency amber light emitting diodes
A novel type-II InGaN-ZnSnGa 2 N 4 quantum well (QW) structure is proposed based on recent experimental achievements for the successful epitaxy of ZnSnN 2 -GaN alloys and the determination of their band offsets with GaN. The simulation results indicate that this structure is promising as the active region for high-efficiency InGaN-based amber (λ ~ 590 nm) light-emitting diodes (LEDs). The hole wavefunction in the valence band is better confined with the insertion of a monolayer scale of ZnSnGa 2 N 4 into the InGaN QW while the electron wavefunction in the conduction band is better confined with the incorporation of an AlGaN layer in the GaN quantum barrier. The band structure of the InGaN-ZnSnGa 2 N 4 QW is numerically simulated based on the experimentally measured band offsets between ZnSnGa 2 N 4 and GaN. With the InGaN-ZnSnGa 2 N 4 QW design, a low In content (20%) is required in the InGaN layer to reach a peak emission wavelength of ~590 nm, yet an In composition of 25% is needed to reach the same emission wavelength for a conventional InGaN QW with the same layer thicknesses. Moreover, the electron-hole wavefunction overlap (Гe1-hh1) for the InGaN-ZnSnGa 2 N 4 QW design reaches 18% for an emission wavelength at ~590 nm. This result is much improved over the conventional InGaN QW overlap of 5% emitting at the same wavelength. The increase in electron-hole wavefunction overlap results in an approximately 14 times enhancement in the predicted spontaneous emission radiative recombination rate of the InGaN-ZnSnGa 2 N 4 QW as compared to that of the conventional InGaN QW. This InGaN-ZnSnGa 2 N 4 QW structure design can be promising to pave a new way to achieve high efficiency amber LEDs.
42 ENGINEERING↗
Modulating Mid-Gap Electronic States Through Site-Selective Modification in B-Pbx/B'-CuyV2O5/CdS Heterostructures for Photocatalytic Hydrogen Evolution
We interfaced ..beta..-Pbx/..beta..'-CuyV2O5 compounds, with varying stoichiometries of precisely positioned Pb-ions (x) and Cu-ions (y) in interstitial sites along a tunnel-structured ?-V2O5 framework, with cysteine-capped CdS (cysCdS) quantum dots (QDs) to yield heterostructured photocatalysts. ..beta..-Pbx/..beta..'-CuyV2O5 compounds exhibit midgap electronic states with orbital contributions from both Cu 3d and stereochemically active Pb 6s states that show distinctive light-initiated reactivity with photoexcited QDs. ..beta..-Pbx/..beta..'-CuyV2O5/CdS heterostructures were prepared by linker-assisted assembly (LAA). Scanning and transmission electron microscopy, energy-dispersive X-ray spectroscopy, and Raman spectroscopy revealed that cysCdS QDs were deposited onto surfaces of ..beta..-Pbx/..beta..'-CuyV2O5 via LAA. HAXPES revealed that the site-selective positioning of Pb-ions and Cu-ions promoted close energetic alignment of the midgap states of ..beta..-Pbx/..beta..'-CuyV2O5 compounds with the valence-band maximum of cysCdS QDs. Transient absorption spectroscopy revealed that photogenerated holes were transferred from CdS QDs to midgap states of ..beta..-Pbx/..beta..'-CuyV2O5 compounds on time scales <50 ps. Finally, photoelectrochemical and photochemical experiments revealed that ..beta..-Pbx/..beta..'-CuyV2O5/CdS heterostructures promoted the photocatalytic reduction of H+ to H2. In photoelectrochemical experiments, under oxidative conditions, for all ..beta..-Pbx/..beta..'-CuyV2O5/CdS heterostructures, H2 was evolved at a Pt counter electrode while a sacrificial donor was oxidized at the heterostructure-functionalized working electrode. In contrast, under reductive conditions, for ..beta..-Pb0.152V2O5/CdS and ..beta..-Pbx/..beta..'-CuyV2O5/CdS heterostructures, H2 was evolved at the working electrode. In photochemical experiments, dispersed ..beta..-Pbx/..beta..'-CuyV2O5/CdS heterostructures promoted the reduction of H+ to H2 under white-light illumination; ..beta..'-Cu0.55V2O5/CdS and ..beta..-Pbx/..beta..'-CuyV2O5/CdS heterostructures, for which midgap states have Cu 3d orbital character, generated 2-fold more H2 than ..beta..-Pb0.152V2O5/CdS heterostructures. Cu-ion insertion thus appends additional acceptor surface states that improve ligand-mediated hole transfer from photoexcited QDs, but such states are intrinsically limited in mediating hole transport to the substrate as a result of the low mobility of holes in narrow Cu 3d-states. Our results reveal that the density and orbital character of midgap states of ..beta..-Pbx/..beta..'-CuyV2O5 compounds, tunable through recently developed site-selective ion insertion strategies, determine efficiencies of charge-transfer and charge-transport mechanisms that underpin photocatalysis.
36 MATERIALS SCIENCE↗
Multifunctional Conjugated Ligand Engineering for Stable and Efficient Perovskite Solar Cells
Surface passivation is an effective way to boost the efficiency and stability of perovskite solar cells (PSCs). However, a key challenge faced by most of the passivation strategies is reducing the interface charge recombination without imposing energy barriers to charge extraction. Here, a novel multifunctional semiconducting organic ammonium cationic interface modifier inserted between the light-harvesting perovskite film and the hole-transporting layer is reported. It is shown that the conjugated cations can directly extract holes from perovskite efficiently, and simultaneously reduce interface non-radiative recombination. Together with improved energy level alignment and the stabilized interface in the device, a triple-cation mixed-halide medium-bandgap PSC with an excellent power conversion efficiency of 22.06% (improved from 19.94%) and suppressed ion migration and halide phase segregation, which lead to a long-term operational stability, is demonstrated. Finally, this strategy provides a new practical method of interface engineering in PSCs toward improved efficiency and stability.
36 MATERIALS SCIENCE↗
Arc Weld Robotic Arm & Enclosure Seismic Anchorage in B226
The Arc Weld Robotic Arm & Enclosure is adequately anchored by the details shown on sheets SKS-01 through SKS-03. Two different Hilti anchors have been provided to allow for installation flexibility. Existing documentation shows that the existing enclosure base has been anchored with 5/8”Ø Kwik Bolt TZ’s. As a result, it is believed that the existing holes are sized for that 5/8”Ø anchor. The first option is to install a 5/8”Ø Kwik Bolt TZ2, similarly to the existing conditions. The second option is to use a threaded insert anchor. Since the largest allowable diameter of HIS-N insert is 1/2”Ø based on the slab thickness, 2”x2” square plate washers with a 9/16”Ø hole will need to be installed on the top of the existing enclosure base plates to reduce the diameter of the existing holes. This is required for the anchorage to provide proper restraint in a seismic event.
42 ENGINEERING↗
Organic Nano-Junctions: Linking Nanomorphology and Charge Transport in Organic Semiconductor Nanoparticles for Organic Photovoltaic Devices
In this study, innovative nanoscale devices are developed to investigate the charge transport in organic semiconductor nanoparticles. Using different steps of lithography techniques and dielectrophoresis, planar organic nano-junctions are fabricated from which hole mobilities are extracted in a space charge-limited current regime. Subsequently, these devices are used to investigate the impact of the composition and morphology of organic semiconductor nanoparticles on the charge mobilities. Pure donor nanoparticles and composite donor:acceptor nanoparticles with different donor compositions in their shell are inserted in the nanogap electrode to form the nano-junctions. The results highlight that the hole mobilities in the composite nanoparticles decrease by two-fold compared to pure donor nanoparticles. However, no significant change between the two kinds of composite nanoparticle morphologies is observed, indicating that conduction pathways for the holes are as efficient for donor proportion in the shell from 40% to 60%. Organic photovoltaic (OPV) devices are fabricated from water-based colloidal inks containing the two composite nanoparticles (P3HT:eh-IDTBR and P3HT:o-IDTBR) and no significant change in the performances is observed in accordance with the mobility results. Through this study, the performance of OPV devices have been successfully correlated to the transport properties of nanoparticles having different morphology via innovative nanoscale devices.
42 ENGINEERING↗
Final Report on Development of Microwave Resonant Cavity Transducer for Fluid Flow Sensing: Development of Microwave Cavity Flow Meter for Advanced Reactor High Temperature Fluids
We are investigating a microwave resonant cavity transducer for flow sensing in the vessel of a high temperature fluid advanced reactor (AR), such as a molten salt cooled reactor (MSCR) or a sodium fast reactor (SFR). This transducer is a hollow metallic cylindrical cavity, with one of the flat walls of the cylinder flexible enough to undergo microscopic deflection due to dynamic fluid pressure. Membrane deflection leads to a shift in the microwave resonant frequency, which can be detected with a spectrum analyzer. We have developed a continuum electromechanics model of the microwave resonant cavity transducer performance. The deflection of the membrane is calculated using equations from the theory of plates and shells for deflection of radially constrained thin circular disk under uniform load. The microwave frequency shift is calculated using the equations from the microwave cavity perturbation theory. The transducer model was validated with proof-of-concept experimental data of water flow sensing with a Brass 360 right circular cylinder with 22.2mm diameter and 203µm thick wall. The cavity was excited through a subwavelength hole in TE 011 mode with resonant frequency f ≈ 17.8GHz. Subsequently, we have performed a preliminary proof-of-principle test of flow sensing in high temperature liquid sodium in environment. For this test, we have developed a cylindrical resonator with the same dimensions as for the Brass 360 cavity. The resonator for high temperature liquid sodium test was machined from stainless steel 316 and electroplated with silver on the interior surfaces. We have also developed and insertion probe consisting of a 50cm WR-42 brass waveguide enclosed in a protective SS316 tube. The cavity was excited through a subwavelength hole on the side of the wall of the cylinder in the TE 011 mode with resonant frequency f ≈ 17.8GHz. The liquid sodium setup consists of a cylindrical vessel with a center feed line, where a transducer inserted through the top cap of the vessel measures velocity of the impinging liquid jet. The sodium flow sensing study was performed in a liquid sodium vessel at 340°C temperature and ambient pressure. The flow rate was changed by varying sodium pump power, and a frequency shift of several hundred kHz was observed. The transducer was removed after 70 days of testing. No visual damage was observed, and the electromagnetic response remained the same. As a calibration experiment, we have assembled a water vessel with a center feed, and with dimensions similar to those of the liquid sodium setup. Water flow sensing was performed before and after liquid sodium test. The responses in both cases are similar and agree with COMSOL computer simulations. Because long-term (multi-year) experimental tests of transducer resilience to harsh environment are not practical, we have developed a probabilistic model of creep to estimate transducer resilience to the harsh environment. The probabilistic model considers diffusion creep under the condition of high temperature and low stress, where the stress and temperature are allowed to be random variables with Gaussian distributions. Using the probabilistic model, we estimate inelastic membrane deflections due to creep for several temperature ranges. We conclude that for temperatures less than 650°C, creep has negligible long-term effect on the transducer performance.
22 GENERAL STUDIES OF NUCLEAR REACTORS↗
Thermal Bekenstein-Hawking entropy from the worldsheet
We define and compute the leading sphere diagram contribution to the entropy of the BTZ black hole supported by Kalb-Ramond flux in bosonic string theory. In a winding condensate description, integrating exactly over the constant mode for the radial direction of AdS 3 reduces the problem to one of the correlation functions of winding operators in the free theory. The volume of the residual PSL(2,ℂ) gauge group of the sphere is canceled by the action of conformal transformations on the winding interaction insertions. We formulate a precise version of the replica trick in terms of (infinitesimally) non-integer winding condensates to produce the entropy of the BTZ black hole. The resulting entropy can be calculated from the one-point function of a non-local operator on the worldsheet.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Flattop-HEU Benchmark Reevaluation Summary
The Flattop critical assembly was first constructed in the 1950’s at Los Alamos National Laboratory as a follow-on to the Topsy experiment. Flattop is composed of a sphere of special nuclear material (SNM) surrounded by a thick spherical reflector made of natural uranium (NU). Two SNM cores currently exist: a highly-enriched-uranium (HEU) core and a plutonium core. The reflector is composed of three parts: a stationary hemisphere and two movable quarter spheres. For fine reactivity control, there are three control rods of NU that are inserted into the stationary hemisphere from underneath the assembly. The final components that allow for reactivity adjustment are the glory hole pieces, mass adjustment buttons, and hemispherical caps. These pieces can be loaded in various configurations to change the available reactivity loaded in the system.
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
The structure of quantum singularities on a Cauchy horizon
Spacetime singularities pose a long-standing puzzle in quantum gravity. Unlike Schwarzschild, a generic family of black holes gives rise to a Cauchy horizon on which, even in the Hartle-Hawking state, quantum observables such as ⟨T μν ⟩ — the expectation value of the stress-energy tensor — can diverge, causing a breakdown of semiclassical gravity. Because they are diagnosed within quantum field theory (QFT) on a smooth background, these singularities may provide a better-controlled version of the spacetime singularity problem, and merit further study. Here, I highlight a mildness puzzle of Cauchy horizon singularities: the ⟨T μν ⟩ singularity is significantly milder than expected from symmetry and dimensional analysis. I address the puzzle in a simple spacetime ${\mathcal{W}}_P$, which arises universally near all black hole Cauchy horizons: the past of a codimension-two spacelike plane in flat spacetime. Specifically, I propose an extremely broad QFT construction in which, roughly speaking, Cauchy horizon singularities originate from operator insertions in the causal complement of the spacetime. The construction reproduces well-known outer horizon singularities (e.g., in the Boulware state), and remarkably, when applied to ${\mathcal{W}}_P$, gives rise to a universal mild singularity structure for robust singularities, ones whose leading singular behavior is state-independent. I make non-trivial predictions for all black hole Cauchy horizon singularities using this, and discuss extending the results beyond robust singularities and the strict near Cauchy horizon limit.
black holes↗
Electrochemically induced iodine migration in mixed halide perovskites: suppression through chloride insertion
The role of chloride in improving the stability of mixed halide perovskites (MAPbCl x Br 0.5 (1–x) I 0.5(1–x) ) 3 is probed using spectroelectrochemistry. Here, the injection of holes into mixed halide perovskite films through applied anodic bias results in the selective migration of iodine with ultimate expulsion into the electrolyte. Increasing the Cl content (x = 0 to 0.1) in the mixed halide perovskite suppresses the iodine mobility and thus decreases the rate of its expulsion into the solution. Implications of iodine mobility induced by hole accumulation and its impact on overall stability is discussed.
14 SOLAR ENERGY↗