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Results for “hot carriers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effects

The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.

Lowry, Lynn E.↗
NASA NTRS1993

Evaluation of radiation effects in re-oxidized nitrided oxide devices by hot carrier stressing at 77 K

An attempt has been made to understand the mechanisms of radiation induced degradation by using different types of hot carrier (HC) stressing experiments. The degradation of re-oxidized nitrided oxide gate dielectric due to irradiation and hot carriers are reported. The effect of electron and hole traps of the virgin device on radiation induced threshold voltage shift is discussed.

Das, N. C.↗
NASA NTRS1996

Influence of Hot Carrier Transport on the Transient Response of an InGaAs/InAlAs Metal-Semiconductor Schottky Diode Structure

The calculated transient characteristic of a heterostructure, rectifying contact is theoretically examined. It is found that hot carrier transport drastically affects the output terminal characteristics of the heterostructure Schottky contact and, hence, the working of a blocking contact. This is of importance to the understanding of InGaAs MSM devices in particular, as well as any structure which contains a blocking contact in general.

Salem, Ali F.↗
NASA NTRS1996

Hot Carrier Dynamics in the X Valley in Si and Ge Measured by Pump-IR-Probe Absorption Spectroscopy

Si is the semiconductor of choice for nanoelectronic roadmap into the next century for computer and other nanodevices. With growing interest in Si, Ge, and Si(sub m)Ge(sub n) strained superlattices, knowledge of the carrier relaxation processes in these materials and structures has become increasingly important. The limited time resolution for earlier studies of carrier dynamics in Ge and Si, performed using Nd:glass lasers, was not sufficient to observe the fast cooling processes. In this paper, we present a direct measurement of hot carrier dynamics in the satellite X valley in Si and Ge by time-resolved infrared(IR) absorption spectroscopy, and show the potential of our technique to identify whether the X valley is the lowest conduction valley in semiconductor materials and structures.

Wang, W. B.↗
NASA NTRS1995

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Alfano, R. R.↗
NASA NTRS1992

Probing hot-carrier transport and elastic scattering using ballistic-electron-emission microscopy

Ballistic-electron-emission microscopy (BEEM) has been used to characterize electron transport and scattering in metal/semiconductor structures. A SiO2 layer at the Au/Si interface was patterned to form transmitting and nontransmitting regions. By analyzing the BEEM current profiles at the boundaries of these regions, information on the spatial distribution of electrons after transport through the Au layer can be derived. A detailed comparison is made between the results presented here and models which involve modification of the electron distribution by scattering.

Milliken, A. M.↗
NASA NTRS1994

Fluorine Implantation and Residual Stresses in Polysilicon Films

As microelectronic device dimensions are reduced below one micron, the hot carrier effect is a major barrier to continued scaling and VLSI reliability. Several reports have shown that fluorine diffusion into the device gate greatly enhances the resistance to hot carriers. There has been some disagreement as to the mechanism of influence; however, several reports have suggested that the polysilicon is physically modified by the fluorine implant and that the beneficial effects are at least in part due to stress relaxation in the polysilicon.

polysilicon fluorine microelectronic devices hot c↗
NASA NTRS1990

Direct spectroscopy of electron and hole scattering

A new spectroscopy has been developed for the first direct probe of carrier-carrier scattering in materials. This spectroscopy provides spatial and energy resolution of the scattering process and has been used to investigate transport, scattering phenomena, and hot-carrier creation in two important metal-semiconductor systems. A theoretical treatment of this scattering spectroscopy yields excellent agreement with experimental spectra and provides direct evidence that carrier-carrier scattering is a dominant energy-loss mechanism in hot-carrier transport.

Bell, L. D.↗
NASA NTRS1999

A Hot-electron Direct Detector for Radioastronomy

A hot-electron transition-edge superconducting bolometer with adjustable thermal relaxation speed is proposed. The bolometer contacts are made from a superconductor with high critical temperature which blocks the thermal diffusion of hot carriers into the contacts. Thus electron-phonon interaction is the only mechanism for heat removal. The speed of thermal relaxation for hot electrons in a nanometer-size superconducting bolometer with T(sub c) = 100-300 mK is controlled by the elastic electron mean free path l. The relaxation rate behaves as T(sup 4)l at subkelvin temperatures and can be reduced by a factor of 10-100 by decreasing 1. Then an antenna- or wave guide-coupled bolometer with a time constant approx. = 10(exp -3) to 10(exp -4) s will exhibit photon-noise limited performance at millimeter and submillimeter wavelengths. The bolometer will have a figure-of-merit NEPtau = 10(exp -22) - 10(exp -21) W/Hz at 100 mK which is 10(exp 3) to 10(exp 4) times better (ie: smaller) than that of a state-of-the-art bolometer. A tremendous increase in speed and sensitivity will have a significant impact for observational mapping applications.

Karasik, Boris S.↗
NASA NTRS1990

Applications of ultrashort laser pulses in science and technology; Proceedings of the Meeting, The Hague, Netherlands, Mar. 12, 13, 1990

Topics discussed are on the generation of high-intensity femtosecond lasers, the high-repetition and infrared femtosecond pulses, and physics of semiconductors and applications. Papers are presented on the femtosecond pulse generation at 193 nm; the generation of intense subpicosecond and femtosecond pulses; intense tunable subpicosecond and femtosecond pulses in the visible and infrared, generated by optical parametric oscillators; a high-efficiency high-energy optical amplifier for femtosecond pulses; and the generation of solitons, periodic pulsing, and nonlinearities in GaAs. Other papers are on ultrafast relaxation dynamics of photoexcited carriers in GaAs, high-order optical nonlinear susceptibilities of transparent glasses, subnanosecond risetime high-power pulse generation using photoconductive bulk GaAs devices, femtosecond studies of plasma formation in crystalline and amorphous silicon, and subpicosecond dynamics of hot carrier relaxation in InP and GaAs.

Antonetti, Andre↗
NASA NTRS1980

Photoemission measurements of interface barrier energies for tunnel oxides on silicon

Internal photoemission measurements of the Si/SiO2 and Al/SiO2 barrier heights on oxides of tunneling thickness (43-56 A) are compared with measurements on thick oxides (310 A and greater) and the barrier heights are found to be the same. The results suggest that substantially thinner oxides, grown by the same method, can be characterized by the same barrier heights. Limits to the experimental technique posed by photovoltaic and displacement currents, and transport of hot carriers in the tunnel oxide are discussed.

Dressendorfer, P. V.↗
NASA NTRS1992

Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors

We present a detailed and thorough study of a wide variety of quantum well infrared photodetectors (QWIPs), which were chosen to have large differences in their optical and transport properties. Both n- and p-doped QWIPs, as well as intersubband transitions based on photoexcitation from bound-to-bound, bound-to-quasi-continuum, and bound-to-continuum quantum well states were investigated. The measurements and theoretical analysis included optical absorption, responsivity, dark current, current noise, optical gain, hot carrier mean free path; net quantum efficiency, quantum well escape probability, quantum well escape time, as well as detectivity. These results allow a better understanding of the optical and transport physics and thus a better optimization of the QWIP performance.

Levine, B. F.↗
NASA NTRS1993

Beem Spectroscopy of Electron Transport Through A1As/GaAs Heterostructures

BEEM spectroscopy has been used to characterize hot carrier transport through A1As/GaAsheterostructures. The dependence of electron transmission on A1As thickness has been directlymeasured, and the position of the A1As L_1 minima, which has been subject to some uncertainty inthe past, has been determined. First-principles transmission calculations, based on a tight-bindingformalism, are compared to the results of BEEM spectroscopy.

Kaiser, W. J.↗
NASA NTRS2005

Design for ASIC reliability for low-temperature applications

In this paper, we present a methodology to design for reliability for low temperature applications without requiring process improvement. The developed hot carrier aging lifetime projection model takes into account both the transistor substrate current profile and temperature profile to determine the minimum transistor size needed in order to meet reliability requirements. The methodology is applicable for automotive, military, and space applications, where there can be varying temperature ranges. A case study utilizing this methodology is given to design for reliability into a custom application-specific integrated circuit (ASIC) for a Mars exploration mission.

reliability↗