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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Correlating hot-electron preheat from the two-plasmon decay instability to $ρR$ degradation for direct-drive implosions on OMEGA

Focused experiments were performed with the goal of isolating the impact of hot-electron preheat on compression in deuterium–tritium (DT) layered, direct-drive implosions on OMEGA. Preheat from the hot-electrons generated by two-plasmon–decay (TPD) activity was varied through the incident laser intensity, with the total preheat energy deposited into unablated DT fuel being inferred using hard x-ray measurements. Results show a clear correlation between the inferred preheat levels and $ρR$ degradation that is consistent with a derived, 1D preheat model. A fit to the results also provides an estimated range of $ρR$ degradation from non-preheat sources for the adiabat ≈5 implosions used in this study. A follow-up study using targets containing Si-doped (5.5%) CH ablators (CHSi) demonstrated results consistent with mid-Z dopants mitigating TPD activity by showing these targets had almost no $ρR$ degradation as the laser intensity was increased up to levels previously considered damaging.

Doping↗
NASA NTRS1986

InGaAs/InAlAs hot-electron transistor

Using InGaAs for the base and InAlAs for the emitter and collector barriers, the first hot-electron transistor in this material system is fabricated. It is shown that 1.6 percent of the injected hot electrons can be transported ballistically through a 0.3 micron thick In(0.53)Ga(0.47)As plus 800-A-thick InAlAs barrier layer at 77 K giving rise to an average mean free path of 920 A. An energy spread of 130 MeV was observed for the ballistic electrons injected at about 700 MeV above the thermal equilibrium conditions. The value of collector barrier heights measured are in reasonable agreement with those deduced independently from thermionic emission studies in InGaAs gate, InAlAs/InGaAs capacitor structures.

Reddy, U. K.↗
NASA NTRS1988

Contact regrowth technique for low-resistance nonalloyed contacts to the hot-electron transistor

A novel contact regrowth technique for the formation of extremely low nonalloyed ohmic contacts is reported. The successful demonstration of this technique is reported on an InGaAs/InAlAs hot-electron transistor device. For the investigated InGaAs-based structure, the regrown contacting scheme reported includes an In(0.53)Ga(0.47)As layer, an InAs/GaAs strained-layer superlattice, and an InAs cap, all heavily doped n type with Si. A very low specific contact resistance of 1.8 x 10 to the -7th ohm sq cm to the base layer is obtained. The higher current densities achieved in the transistor characteristics are in close agreement with calculations, and a contact model is presented explaining the poor results of conventional nonalloyed contacts.

Peng, C. K.↗
DOE OSTI2024

Mitigation of hot-electron preheat from the two-plasmon-decay instability using silicon-doped plastic shells in direct-drive implosions on OMEGA

Hot electrons generated by the two-plasmon-decay (TPD) instability in laser-direct-drive implosions preheat the fuel and degrade performance. The mitigation of preheat using silicon-doped ablators (i.e., preheat is reduced by a factor of 1.40 ± 0.04) while decreasing the ratio of the laser spot diameter to the target diameter (⁠R b /R t⁠ ) to mitigate cross-beam energy transfer has been demonstrated on the OMEGA laser for quarter-critical laser intensities of 4.1 x 10 14 W/cm 2 ⁠, equivalent to an incident laser intensity of 8.3 x 10 14 W/cm 2 ⁠. The silicon dopant increases the electron temperature of the ablation plasma, which raises the intensity threshold for the onset of the TPD instability. These results show that implosion designs utilizing higher drive intensities can be used to achieve higher shell velocities, which are currently inaccessible with plastic ablators due to excessive preheat.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1990

Impact ionization in the base of a hot-electron AlSb/InAs bipolar transistor

The operation of a new AlSb/InAs heterojunction bipolar transistor is studied. The electrons are injected into a p-InAs base across the AlSb/InAs heterojunction. The conduction-band discontinuity at this heterojunction is sufficiently large so that energy of the electrons injected into InAs exceeds the threshold for generating electron-hole pairs by impact ionization. The observed incremental common base current at zero collector-base bias decreases and becomes negative as the emitter current is increased, thus providing direct evidence for impact ionization entirely by band-edge discontinuities.

Vengurlekar, Arvind S.↗
DOE OSTI2026

Preheat effects in laser-driven Rayleigh–Taylor instability experiments at intensities greater than $10^{15}$ $\textrm{W}$ $\textrm{cm}^{-2}$ at OMEGA EP and the NIF

The propagation of high-energy X-rays or hot electrons have the potential to alter the initial conditions in experimental target designs, especially at material interfaces, for laser-driven inertial confinement fusion (ICF) and high-energy density (HED) experimental platforms. Hot-electron preheat can drastically modify the initial conditions of experimental targets used to study the deceleration-stage Rayleigh–Taylor instability (RTI) both with and without applied magnetic fields. Therefore, it is necessary to understand and quantify the impact of hot-electron preheat. The hydrodynamic (HD) capabilities in the Ares code are used to study the effects varying levels of preheat can have on RTI evolution. The experimental and computational studies presented in this work demonstrate that at high laser intensities of around or greater than 10 15 W cm −2 , there is hot-electron generation from laser plasma instabilities which induces substantial preheat and impacts the morphology of RTI evolution and even inhibits the intended RTI growth such that it is not observable experimentally. The necessity of better quantifying hot-electron induced preheat and mitigating its impact on such high-intensity direct-drive laser experiments in the future is discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Revealing the Phonon Bottleneck Limit in Negatively Charged CdS Quantum Dots

The capture of photoexcited hot electrons in semiconductors before they lose their excess energy to cooling is a long-standing goal in photon energy conversion. Semiconductor nanocrystals have large electron energy spacings that are expected to slow down electron relaxation by phonon emission, but hot electrons in photoexcited nanocrystals, nevertheless, cool rapidly by energy transfer to holes. This makes the intrinsic phonon-bottleneck-limited hot electron lifetime in nanocrystals elusive. For this work, we used a combination of theory and experiments to probe the hot-electron dynamics of negatively charged cadmium sulfide (CdS) colloidal quantum dots (QDs) in the absence of holes. Experiments found that these hot electrons cooled on a 100 ps time scale. Theoretical simulations predicted that pure phonon-bottleneck-limited hot electron cooling occurs on a similar time scale. This similarity suggests that the experimental measurements reflect the upper limit on the hot-electron lifetimes in these CdS QDs and the lower limit on the rates of processes that can harvest those hot electrons.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Light-Matter Interaction in Ultrastable Tunneling Nanogaps

Light emission and detection through tunnel junctions have emerged as a promising platform for studying nanoscale light–matter interactions, including electroluminescence and photoassisted transport. However, controlling these interactions in the tunneling regime has been challenging due to complex underlying mechanisms that remain poorly understood. A major obstacle is the difficulty in forming stable junctions that can function reliably over extended periods. In this study, we fabricate ultrastable tunneling junctions consisting of epitaxial indium–tin-oxide, epitaxial lutetium oxide, and gold. With their stable and consistent tunneling currents, we investigate photon-assisted transport phenomena using simple direct-current detection. Our results demonstrate that optical rectification is the primary contributor to the laser-induced current, alongside thermal effects and hot-electron currents. Furthermore, owing to their epitaxial nature and high breakdown threshold, this ultrastable platform holds promise for future real-world applications, including nanoscale light sources and multifunctional photodetectors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1973

Microwave properties of n-type InSb in a magnetic field between 4 and 300 K.

A two-band conduction model is used to determine the properties of shallow-type impurity semiconductors in the presence of microwave and dc magnetic fields as a function of temperature. Measurements using cavity perturbation techniques are employed to determine the properties of n-type InSb and theoretical and experimental results between 4 and 300 K are compared. The hot-electron effect was found to be insignificant between 77 and 300 K, and the scattering mechanisms are dominated by acoustic and polar modes over the same temperature range.-

Eldumiati, I. I.↗
NASA NTRS1973

Observation of the J = 2 to J = 1 transition of interstellar CO at 1.3 millimeters

The NRAO 36-foot antenna at Kitt Peak with a novel type of millimeter-wave superheterodyne receiver was used in observations of 1.3-mm line interstellar radiation due to J ? 2-1 transitions of C(12)0(16) and C(13)0(16). The liquid-helium-cooled hot-electron bolometer mixer of the superheterodyne receiver was used as the detecting element. The Orion Nebula CO system was found to be thermalized, showing a peak excitation temperature of about 76 K.

Phillips, T. G.↗
NASA NTRS1985

Submillimeter wave absorption of n-type InSb at low temperatures

The absorption coefficient of two high-purity n-InSb samples is measured in the 10-40 per cm range using Fourier transform spectroscopy. The absorption coefficient spectrum is presented for both samples at 4.2 K. It is also shown for the lower resistance sample cooled to 2.2 K and heated by dc bias to elevated electron gas temperatures of 7.5 and 17.9 K. ac Drude theory gives rather poor agreement with experiment at 2.2 and 4.2 K but does much better when the sample electron gas is heated. In contrast, a simple quantum mechanical theory of absorption based on inverse Bremsstrahlung yields promising agreement at the lower temperatures although its applicability is questionable. The non-Drudian absorption is shown to have a favorable effect on the performance of InSb hot-electron bolometers.

Brown, E. R.↗
NASA NTRS1985

Absolute response and noise equivalent power of cyclotron resonance-assisted InSb detectors at submillimeter wavelengths

Spectra are presented of the responsivity and noise equivalent power (NEP) of liquid-helium-cooled InSb detectors as a function of magnetic field in the range 20-110 per cm. The measurements are all made using a Fourier transform spectrometer with thermal sources. The results show a discernable peak in the detector response at the conduction electron cyclotron resonance (CCR) frequency for magnetic fields as low as 3 kG. The magnitude of responsivity at the resonance peaks is roughly constant with magnetic field and is comparable to the low-frequency hot-electron bolometer response. The NEP at the peaks is found to be comparable to the best long wavelength results previously reported. For example, NEP = 4.5 x 10 to the 13th W/(square root of Hz) at 4.2 K, 6 kG, and 40 per cm was measured. The InSb CCR will provide a much improved detector for laboratory spectroscopy, as compared with hot electron bolometers, in the 20-100 per cm range.

Brown, E. R.↗