CMOS imager with embedded analog early image processor
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image processing CMOS imager↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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New process and pixel structure of an SOI-CMOS imager
We present architecture, process design and results from test pixels of a new Active Pixel Sensor (APS) imager implemented in 0.8 um SOI-CMOS technology.
SOI-CMOS↗
A back-illuminated megapixel CMOS image sensor
In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.
Complementary Metal Oxide Semiconductor imager (CM↗
On-Focal-Plane Successive Approximation A/D/ Converters for Digital CMOS Image Sensors
Two charge-scaling successive approximation A/D converters for culumn-parallel data processing in CMOS active pixel image sensors (APS) are presented.
APS active pixel sensors A/D converters↗
Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects
In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.
imagers↗
Advances in Detector-Integrated Filter Coatings for the Far Ultraviolet
We report on the continued development of multilayer optical coatings on back-illuminated silicon imaging sensors in order to enhance the functionality of such systems at ultraviolet wavelengths. This includes the development metal-dielectric filter structures to enable solar-blind operation, and graded thickness coatings to tune the spatial response of a detector system to the dispersion of a spectrometer. Such systems can maintain the high internal quantum efficiency afforded by the delta-doping process utilized at NASA JPL, while also providing long-wavelength rejection or a spatially optimized efficiency (or both). We present the characterization of CCD and CMOS image sensors incorporating these processes, and describe the atomic layer deposition coating processes. Such detectors are currently being developed for ground-based high energy physics applications as well as NASA orbital astrophysics instruments operating at wavelengths shorter than 200 nm.
Nikzad, Shouleh↗
Process and pixels for high performance imager in SOI-CMOS technology
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bulk-CMOS foundries SOI technology MOSFETs↗
Programmable Multiresolution CMOS Active Pixel Sensor
CMOS active pixel sensors (APS) allow the flexibility of placing signal processing circuitry on the imaging focal plane. The multiresolution CMOS APS can perform block averaging on-chip to eliminate the off-chip software intensive image processing. This 128 x 128 APS array can be read out at any user-defined resolution by configuring a set of digital shift registers. The resolution frame rate is 30 Hz with higher rates for all other image resolutions.
APS↗
Increasing the dynamic range of CMOS photodiode imagers
A multiple-step reset process and circuit for resetting a voltage stored on a photodiode of an imaging device. A first stage of the reset occurs while a source and a drain of a pixel source-follower transistor are held at ground potential and the photodiode and a gate of the pixel source-follower transistor are charged to an initial reset voltage having potential less that of a supply voltage. A second stage of the reset occurs after the initial reset voltage is stored on the photodiode and the gate of the pixel source-follower transistor and the source and drain voltages of the pixel source-follower transistor are released from ground potential thereby allowing the source and drain voltages of the pixel source-follower transistor to assume ordinary values above ground potential and resulting in a capacitive feed-through effect that increases the voltage on the photodiode to a value greater than the initial reset voltage.
Pain, Bedabrata↗
Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications
This paper describes ongoing research and development of CMOS active pixel image sensors for low cost commercial applications. A number of sensor designs have been fabricated and tested in both p-well and n-well technologies. Major elements in the development of the sensor include on-chip analog signal processing circuits for the reduction of fixed pattern noise, on-chip timing and control circuits and on-chip analog-to-digital conversion (ADC). Recent results and continuing efforts in these areas will be presented.
active pixel image sensors CMOS signal processing ↗
Dynamically reconfigurable vision with high performance CMOS active pixel sensors (APS)
A high-performance computational imager based on integration of CMOS active pixel imager array with on-chip signal processing and control via a new column-parallel architecture is presented.
CMOS imager computational imager low-power VLSI↗
A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems
A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.
Mendis, Sunetra K.↗
NASA Tech Briefs, December 2009
Topics include: A Deep Space Network Portable Radio Science Receiver; Detecting Phase Boundaries in Hard-Sphere Suspensions; Low-Complexity Lossless and Near-Lossless Data Compression Technique for Multispectral Imagery; Very-Long-Distance Remote Hearing and Vibrometry; Using GPS to Detect Imminent Tsunamis; Stream Flow Prediction by Remote Sensing and Genetic Programming; Pilotless Frame Synchronization Using LDPC Code Constraints; Radiometer on a Chip; Measuring Luminescence Lifetime With Help of a DSP; Modulation Based on Probability Density Functions; Ku Telemetry Modulator for Suborbital Vehicles; Photonic Links for High-Performance Arraying of Antennas; Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration; Hardware-Efficient Monitoring of I/O Signals; Video System for Viewing From a Remote or Windowless Cockpit; Spacesuit Data Display and Management System; IEEE 1394 Hub With Fault Containment; Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph; Waveguide Transition for Submillimeter-Wave MMICs; Magnetic-Field-Tunable Superconducting Rectifier; Bonded Invar Clip Removal Using Foil Heaters; Fabricating Radial Groove Gratings Using Projection Photolithography; Gratings Fabricated on Flat Surfaces and Reproduced on Non-Flat Substrates; Method for Measuring the Volume-Scattering Function of Water; Method of Heating a Foam-Based Catalyst Bed; Small Deflection Energy Analyzer for Energy and Angular Distributions; Polymeric Bladder for Storing Liquid Oxygen; Pyrotechnic Simulator/Stray-Voltage Detector; Inventions Utilizing Microfluidics and Colloidal Particles; RuO2 Thermometer for Ultra-Low Temperatures; Ultra-Compact, High-Resolution LADAR System for 3D Imaging; Dual-Channel Multi-Purpose Telescope; Objective Lens Optimized for Wavefront Delivery, Pupil Imaging, and Pupil Ghosting; CMOS Camera Array With Onboard Memory; Quickly Approximating the Distance Between Two Objects; Processing Images of Craters for Spacecraft Navigation; Adaptive Morphological Feature-Based Object Classifier for a Color Imaging System; Rover Slip Validation and Prediction Algorithm; Safety and Quality Training Simulator; Supply-Chain Optimization Template; Algorithm for Computing Particle/Surface Interactions; Cryogenic Pupil Alignment Test Architecture for Aberrated Pupil Images; and Thermal Transport Model for Heat Sink Design.
Source record↗
Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition
Dark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.
CMOS Image Sensor (CIS)↗
Active pixel sensors with substantially planarized color filtering elements
A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.
Fossum, Eric R.↗
NASA Tech Briefs, November 2008
Topics covered include: Digital Phase Meter for a Laser Heterodyne Interferometer; Vision System Measures Motions of Robot and External Objects; Advanced Precipitation Radar Antenna to Measure Rainfall From Space; Wide-Band Radar for Measuring Thickness of Sea Ice; Vertical Isolation for Photodiodes in CMOS Imagers; Wide-Band Microwave Receivers Using Photonic Processing; L-Band Transmit/Receive Module for Phase-Stable Array Antennas; Microwave Power Combiner/Switch Utilizing a Faraday Rotator; Compact Low-Loss Planar Magic-T; Using Pipelined XNOR Logic to Reduce SEU Risks in State Machines; Quasi-Optical Transmission Line for 94-GHz Radar; Next Generation Flight Controller Trainer System; Converting from DDOR SASF to APF; Converting from CVF to AAF; Documenting AUTOGEN and APGEN Model Files; Sequence History Update Tool; Extraction and Analysis of Display Data; MRO DKF Post-Processing Tool; Rig Diagnostic Tools; MRO Sequence Checking Tool; Science Activity Planner for the MER Mission; UAVSAR Flight-Planning System; Templates for Deposition of Microscopic Pointed Structures; Adjustable Membrane Mirrors Incorporating G-Elastomers; Hall-Effect Thruster Utilizing Bismuth as Propellant; High-Temperature Crystal-Growth Cartridge Tubes Made by VPS; Quench Crucibles Reinforced with Metal; Deep-Sea Hydrothermal-Vent Sampler; Mars Rocket Propulsion System; Two-Stage Passive Vibration Isolator; Improved Thermal Design of a Compression Mold; Enhanced Pseudo-Waypoint Guidance for Spacecraft Maneuvers; Altimetry Using GPS-Reflection/Occultation Interferometry; Thermally Driven Josephson Effect; Perturbation Effects on a Supercritical C7H16/N2 Mixing Layer; Gold Nanoparticle Labels Amplify Ellipsometric Signals; Phase Matching of Diverse Modes in a WGM Resonator; WGM Resonators for Terahertz-to-Optical Frequency Conversion; Determining Concentration of Nanoparticles from Ellipsometry; Microwave-to-Optical Conversion in WGM Resonators; Four-Pass Coupler for Laser-Diode-Pumped Solid-State Laser; Low-Resolution Raman-Spectroscopy Combustion Thermometry; Temperature Sensors Based on WGM Optical Resonators; Varying the Divergence of Multiple Parallel Laser Beams; Efficient Algorithm for Rectangular Spiral Search; Algorithm-Based Fault Tolerance Integrated with Replication; Targeting and Localization for Mars Rover Operations; Terrain-Adaptive Navigation Architecture; Self-Adjusting Hash Tables for Embedded Flight Applications; Schema for Spacecraft-Command Dictionary; Combined GMSK Communications and PN Ranging; System-Level Integration of Mass Memory; Network-Attached Solid-State Recorder Architecture; Method of Cross-Linking Aerogels Using a One-Pot Reaction Scheme; An Efficient Reachability Analysis Algorithm.
Source record↗
Smart Camera Technology Increases Quality
When it comes to real-time image processing, everyone is an expert. People begin processing images at birth and rapidly learn to control their responses through the real-time processing of the human visual system. The human eye captures an enormous amount of information in the form of light images. In order to keep the brain from becoming overloaded with all the data, portions of an image are processed at a higher resolution than others, such as a traffic light changing colors. changing colors. In the same manner, image processing products strive to extract the information stored in light in the most efficient way possible. Digital cameras available today capture millions of pixels worth of information from incident light. However, at frame rates more than a few per second, existing digital interfaces are overwhelmed. All the user can do is store several frames to memory until that memory is full and then subsequent information is lost. New technology pairs existing digital interface technology with an off-the-shelf complementary metal oxide semiconductor (CMOS) imager to provide more than 500 frames per second of specialty image processing. The result is a cost-effective detection system unlike any other.
Source record↗
High-resolution, continuous field-of-view (FOV), non-rotating imaging system
A high resolution CMOS imaging system especially suitable for use in a periscope head. The imaging system includes a sensor head for scene acquisition, and a control apparatus inclusive of distributed processors and software for device-control, data handling, and display. The sensor head encloses a combination of wide field-of-view CMOS imagers and narrow field-of-view CMOS imagers. Each bank of imagers is controlled by a dedicated processing module in order to handle information flow and image analysis of the outputs of the camera system. The imaging system also includes automated or manually controlled display system and software for providing an interactive graphical user interface (GUI) that displays a full 360-degree field of view and allows the user or automated ATR system to select regions for higher resolution inspection.
Huntsberger, Terrance L.↗